HP122

NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122 █ APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— Storage Temperature ………………………… - 55~150 ℃ T j —— Junction Temperature ………………………………… 150 ℃ PC——Collector Dissipation Tc=25℃） （ ……………………………65W PC——Collector Dissipation（Ta=25℃）……………………………2W VCBO ——Collector-Base Voltage………………………………100V VCEO——Collector-Emitter Voltage ……………………………100V V E B O —— Emitter-Base Voltage ……………………………… 5V IC——Collector Current（DC）………………………………………5A IC——Collector Current（Pulse）……………………………………8A Ib——Base Current………………………………………………120mA TO-220 1―Base，B 2―Collector， C 3―Emitter，E █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCBO BVCEO HFE Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage *DC Current Gain Min 100 100 1000 2.0 4.0 2.5 0.5 0.2 2.0 200 cycle≤2% Typ Max Unit V V V V V mA mA mA pF Test Conditions IC=1mA, IC=5mA, IE=0 IB=0 VCE=3V, IC=0.5A IC=3A, IB=12mA IC=3A, IB=20mA VCE=3V, IC=3A VCB=50V, IB=0 VCB=100V, IE=0 VEB=5V, IC=0 VCB=10V, IE=0，f=0.1MHz VCE(sat1) *Collector- Emitter Saturation Voltage VCE(sat2) *Collector- Emitter Saturation Voltage VBE(ON) *Base-Emitter On Voltage ICEO ICBO IEBO Cob Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Output Capacitance *Pulse Test：PW≤300μs，Duty NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122