HP127

PNP S I L I C O N T R AN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP127 █ APPLICATIONS PNP Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— Storage Temperature ………………………… - 55~150 ℃ T j —— Junction Temperature ………………………………… 150 ℃ PC——Collector Dissipation Tc=25℃） （ ……………………………65W PC——Collector Dissipation（Ta=25℃）……………………………2W VCBO——Collector-Base Voltage………………………………-100V VCEO——Collector-Emitter Voltage……………………………-100V V E B O —— Emitter-Base Voltage ……………………………… -5V IC——Collector Current DC） （ ………………………………………-5A IC——Collector Current（Pulse）……………………………………-8A Ib——Base Current……………………………………………-120mA TO-220 1―Base，B 2―Collector， C 3―Emitter，E █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCBO BVCEO HFE Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage *DC Current Gain Min -100 -100 1000 -2.0 -4.0 -2.5 -0.5 -0.2 -2.0 300 cycle≤2% Typ Max Unit V V V V V mA mA mA pF Test Conditions IC=-1mA, IC=-5mA, IE=0 IB=0 VCE=-3V, IC=-0.5A IC=-3A, IB=-12mA IC=-3A, IB=-20mA VCE=-3V, IC=-3A VCB=-50V, IB=0 VCB=-100V, IE=0 VEB=-5V, IC=0 VCB=-10V, IE=0，f=0.1MHz VCE(sat1) *Collector- Emitter Saturation Voltage VCE(sat2) *Collector- Emitter Saturation Voltage VBE(ON) *Base-Emitter On Voltage ICEO ICBO IEBO Cob Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Output Capacitance *Pulse Test：PW≤300μs，Duty PNP S I L I C O N T R AN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP127