HP147T

Shantou Huashan Electronic Devices Co.,Ltd. PNP DARLINGTON TRANSISTOR HP147T █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 80W VCBO——Collector-Base Voltage………………………… -100V VCEO——Collector-Emitter Voltage……………………… -100V VEBO——Emitter-Base Voltage……………………………… -5V IC——Collector Current DC） （ ……………………………… -10A IB——Base Current…………………………………………-0.5A TO-220 1―Base，B 2―Collector，C 3―Emitter, E █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter-Base Cutoff Current Min Typ Max Unit Test Conditions BVCEO(SUS) ICEO ICBO IEBO HFE（1） HFE（2） VCE(sat1) VCE(sat2) VBE(sat) VBE(on) tD tR tS tF -100 -2 -1 -2 1000 500 -2 -3 -3.5 -3 0.15 0.55 2.5 2.5 V mA mA mA IC=-30mA, IB=0 VCE=-50V, IB=0 VCB=-100V, IE=0 VEB=-5V, IC=0 VCE=-4V, IC=-5A VCE=-4V, IC=-10A DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Base- Emitter On Voltage Deiay time Rise Time Storage Time Fall Time V V V V uS uS uS uS IC=-5A, IB=-10mA IC=-10A, IB=-40mA IC=-10A, IB=-40mA VCE=-4V,IC=-10A, Vcc=-30V,Ic=-5A IB1=-20mA IB2=20mA Shantou Huashan Electronic Devices Co.,Ltd. PNP DARLINGTON TRANSISTOR HP147T