Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R AN S I S T O R
HS1205
█ APPLICATIONS
Large Current Switching
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation(Tc=25℃)…………………… 10W PC——Collector Dissipation(TA=25℃)…………………… 1W VCBO —— Collector-Base Voltage ………………………… -25V VCEO —— Collector-Emitter Voltage ……………………… -20V VEBO——Emitter-Base Voltage……………………………… -5V IC——Collector Current………………………………………-5A 1―Base,B 2―Collector,C 3―Emitter,E TO-126
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol Characteristics Min Typ Max Unit Test Conditions
BVCBO BVCEO BVEBO ICBO IEBO
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
Collector Cut-off Current
-25 -20 -5 -500 -500 100 60 -250 -1.0 -0.94 320 60 40 200 10 -500 -1.3 -1.2 400
V V V nA nA
IC=-10μA, IE=0 IC=-1mA, IB=0 IE=-10μA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-500mA VCE=-2V, IC=-4A
Emitter Cut-off Current
HFE(1) DC Current Gain HFE(2) DC Current Gain VCE(sat1) Collector- Emitter Saturation Voltage VCE(sat2) Collector- Emitter Saturation Voltage VBE(sat) ft Cob tON tSTG tF Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
mV V V MHz pF nS nS nS
IC=-3A, IB=-60mA IC=-3A, IB=-60mA IC=-3A, IB=-60mA VCE=-5V, IC=-200mA, VCB=-10V, IE=0,f=1MHz See specified test circuit
Output Capacitance Turn-On Time Storage Fall Time Time
█ hFE Classification R 100—200 S 140—280 T 200—400
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