HS600K

Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T RA N S I S T O R HS600K █ APPLICATIONS Low frequency power amplifier，Medium Seed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation Tc=25℃） （ ……………………… 1W VCBO —— Collector-Base Voltage ………………………… 120V VCEO —— Collector-Emitter Voltage ……………………… 120V VEBO —— Emitter-Base Voltage ……………………………… 5V IC——Collector Current………………………………………1A 1―Emitter，E 2―Collector，C 3―Base，B TO-126 █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO ICBO IEBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current 120 120 5 1 1 60 20 0.15 0.85 500 700 100 130 20 0.4 1.2 320 V V V IC=10μA, IE=0 IC=1mA, IB=0 IE=10μA，IC=0 μA VCB=50V, IE=0 μA VEB=4V, IC=0 VCE=5V, IC=50mA VCE=5V, IC=500mA V V nS nS nS MHz pF VCE=10V, IC=50mA, VCB=10V, IE=0，f=1MHz See specified test circuit IC=500mA, IB=50mA IC=500mA, IB=50mA Emitter Cut-off Current HFE（1） DC Current Gain HFE（2） DC Current Gain VCE(sat) VBE(sat) tOFF tSTG tF ft Cob Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn-Off Time Storage Fall Time Current Gain-Bandwidth Product Time Output Capacitance █ hFE Classification D 60—120 E 100—200 F 160—320 Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T RA N S I S T O R HS600K Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T RA N S I S T O R HS600K