HS631K

Shantou Huashan Electronic Devices Co.,Ltd. PNP S I L I C O N T R AN S I S T O R HS631K █ APPLICATIONS Low frequency power amplifier，Medium Seed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation Tc=25℃） （ ……………………… 1W VCBO——Collector-Base Voltage………………………… -120V VCEO——Collector-Emitter Voltage……………………… -120V VEBO —— Emitter-Base Voltage ……………………………… -5V IC——Collector Current………………………………………-1A 1―Emitter，E 2―Collector，C 3―Base，B TO-126 █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO ICBO IEBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current -120 -120 -5 -1 -1 60 20 -0.15 -0.85 100 600 80 110 30 -0.4 -1.2 320 V V V IC=-10μA, IE=0 IC=-1mA, IB=0 IE=-10μA，IC=0 μA VCB=-50V, IE=0 μA VEB=-4V, IC=0 VCE=-5V, IC=-50mA VCE=-5V, IC=-500mA V V nS nS nS MHz pF VCE=-10V, IC=-50mA, VCB=10V, IE=0，f=1MHz See specified test circuit IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA Emitter Cut-off Current HFE（1） DC Current Gain HFE（2） DC Current Gain VCE(sat) VBE(sat) tOFF tSTG tF ft Cob Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn-Off Time Storage Fall Time Current Gain-Bandwidth Product Time Output Capacitance █ hFE Classification D 60—120 E 100—200 F 160—320 Shantou Huashan Electronic Devices Co.,Ltd. PNP S I L I C O N T R AN S I S T O R HS631K Shantou Huashan Electronic Devices Co.,Ltd. PNP S I L I C O N T R AN S I S T O R HS631K