HS669A

Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T RA N S I S T O R HS669A █ APPLICATIONS Low Frequancy Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 20W PC——Collector Dissipation（TA=25℃）…………………… 1W VCBO —— Collector-Base Voltage ………………………… 180V VCEO —— Collector-Emitter Voltage ……………………… 160V VEBO —— Emitter-Base Voltage ……………………………… 5V IC——Collector Current………………………………………1.5A 1―Emitter，E 2―Collector，C 3―Base，B TO-126 █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO ICBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current 180 160 5 10 60 30 1 1.5 140 14 200 V V V μA IC= 1mA, IE=0 IC= 10mA, IB=0 IE= 1mA, IC=0 VCB=160V, IE=0 VCE= 5V, IC= 150mA VCE= 5V, IC= 500mA HFE（1） DC Current Gain HFE（2） DC Current Gain VCE(sat) VBE ft Cob Collector- Emitter Saturation Voltage Base-Emitter Voltage Current Gain-Bandwidth Product V V MHz pF IC= 500mA, IB= 50mA VCE=5V, IC=150mA VCE=5V, IC=150mA, VCB=10V, IE=0，f=1MHz Output Capacitance █ hFE Classification B 60—120 C 100—200