HSBD135

Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T R A N S I S T O R HSBD135 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg ——Storage Temperature………………………… -55~150℃ T j —— Junction Temperature ……………………………… 1 50 ℃ PC——Collector Dissipation（Tc=25℃）…………………… 12.5W PC——Collector Dissipation（TA=25℃）…………………… 1.25W VCBO —— Collector-Base Voltage …………………………… 45V VCEO —— Collector-Emitter Voltage ………………………… 45V VEBO——Emitter-Base Voltage………………………………… 5V IC——Collector Current Pulse） （ ………………………………… 3A IC——Collector Current（DC）……………………………… 1.5A IB——Base Current………………………………………………0.5A 1―Emitter, E 2―Collector，C 3―Base，B █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol ICBO IEBO hFE(1) hFE(2) hFE(3) VCE(sat) VBE(ON) VCEO(SUS) Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Sustaining Voltage 45 Characteristics Collector Cut-off Current Emitter-Base Cut-off Current DC Current Gain 25 25 40 250 0.5 1.0 V V Min Typ Max 0.1 10 Unit μA μA Test Conditions VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=2V, IC=0.5A VCE=2V, IC=150mA Ic=500mA, IB=50mA Ic=0.5A, VCE=2V Ic=30mA,IB=0 █hFE(3) Classification Cassification 6 40~100 10 63~160 16 100~250 hFE(3)