Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSIST OR
HSBD140
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg ——Storage Temperature………………………… -55~150℃ T j —— Junction Temperature ……………………………… 1 50 ℃ PC——Collector Dissipation(Tc=25℃)…………………… 12.5W PC——Collector Dissipation(TA=25℃)…………………… 1.25W VCBO —— Collector-Base Voltage …………………………… -80V VCEO —— Collector-Emitter Voltage ………………………… -80V VEBO——Emitter-Base Voltage………………………………… -5V IC——Collector Current Pulse) ( ………………………………… -3A IC——Collector Current(DC)……………………………… -1.5A IB——Base Current……………………………………………-0.5A
1―Emitter, E
2―Collector,C 3―Base,B
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol ICBO IEBO *hFE(1) *hFE(2) *hFE(3) *VCE(sat) *VBE(ON) *VCEO(SUS) Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Sustaining Voltage -80 Characteristics Collector Cut-off Current Emitter-Base Cut-off Current DC Current Gain 25 25 40 250 -0.5 -1.0 V V Min Typ Max -0.1 -10 Unit μA μA Test Conditions VCB=-30V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-5mA VCE=-2V, IC=-0.5A VCE=-2V, IC=-150mA Ic=-500mA, IB=-50mA Ic=-0.5A, VCE=-2V Ic=-30mA,IB=0
*Pulse Test:PW=350 μs,Duty Cycie=2% Pulsed
█hFE(3) Classification
Cassification 6 40~100 10 63~160 16 100~250
hFE(3)
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSIST OR
HSBD140
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