HSBD179

Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR HSBD179 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg ——Storage Temperature………………………… -55~150℃ T j —— Junction Temperature ……………………………… 1 50 ℃ PC——Collector Dissipation（Tc=25℃）…………………… 30W VCBO —— Collector-Base Voltage …………………………… 80V VCEO —— Collector-Emitter Voltage ………………………… 80V VEBO——Emitter-Base Voltage………………………………… 5V IC——Collector Current Pulse） （ ………………………………… 7A IC——Collector Current（DC）……………………………… 3A 1―Emitter, E 2―Collector，C 3―Base，B █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICBO IEBO *HFE（1） *HFE（2） *VCE(sat) *VBE(on) VCEO(sus) ft Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Sustaining Voltage Current Gain-Bandwidth Product 80 3 40 15 100 1 250 0.8 1.3 μA mA VCB=80V, IE=0 VEB=5V, IC=0 VCE=2V, IC=150mA VCE=2V, IC=1A V V V MHz IC=1A, IB=0.1A VCE=2V, IC=1A IC=100mA, IB=0 VCE=10V, IC=250mA, *Pulse Test:PW=350μs,Duty Cycle=1.5% Pulsed █hFE(3) Classification Cassification 6 40~100 10 63~160 16 100~250 hFE(3)