HSBD180

Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSISTOR HSBD180 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg ——Storage Temperature………………………… -55~150℃ T j —— Junction Temperature ……………………………… 1 50 ℃ PC——Collector Dissipation（Tc=25℃）…………………… 30W VCBO —— Collector-Base Voltage …………………………… -80V VCEO —— Collector-Emitter Voltage ………………………… -80V VEBO——Emitter-Base Voltage………………………………… -5V IC——Collector Current Pulse） （ ………………………………… -7A IC——Collector Current（DC）……………………………… -3A 1―Emitter, E 2―Collector，C 3―Base，B █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICBO IEBO *HFE（1） *HFE（2） *VCE(sat) *VBE(on) VCEO(sus) ft Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Sustaining Voltage Current Gain-Bandwidth Product -80 3 40 15 -100 -1 250 -0.8 -1.3 μA mA VCB=-80V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-150mA VCE=-2V, IC=-1A V V V MHz IC=-1A, IB=-0.1A VCE=-2V, IC=-1A IC=-100mA, IB=0 VCE=-10V, IC=-250mA, *Pulse Test:PW=350μs,Duty Cycle=1.5% Pulsed █hFE(3) Classification Cassification 6 40~100 10 63~160 16 100~250 hFE(3)