HSBD238

Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSIST OR HSBD238 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg ——Storage Temperature………………………… -55~150℃ T j —— Junction Temperature ……………………………… 1 50 ℃ PC——Collector Dissipation（Tc=25℃）…………………… 25W VCBO —— Collector-Base Voltage …………………………… 100V VCEO —— Collector-Emitter Voltage ………………………… -80V VCER——Collector-Emitter Voltage………………………… -100V VEBO——Emitter-Base Voltage………………………………… -5V IC——Collector Current Pulse） （ ………………………………… -6A IC——Collector Current（DC）……………………………… -2A 1―Emitter, E 2―Collector，C 3―Base，B █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol ICBO IEBO hFE(1) *hFE(2) *VCE(sat) *VBE(ON) VCEO(SUS) fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Sustaining Voltage -80 3 MHz Characteristics Collector Cut-off Current Emitter-Base Cut-off Current DC Current Gain 40 25 -0.6 -1.3 V V Min Typ Max -100 -1 Unit μA mA Test Conditions VCB=-100V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-150mA VCE=-2V, IC=-1A Ic=-1A, IB=-0.1A Ic=-1A, VCE=-2V Ic=-100mA,IB=0 Ic=-250mA, VCE=-10V Current Gain-Bandwidth Product * Pulse Test:PW=350μS,Duty Cycle≤1.5% Pulsed Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSIST OR HSBD238