Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HSBD435
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg ——Storage Temperature………………………… -55~150℃ T j —— Junction Temperature ……………………………… 1 50 ℃ PC——Collector Dissipation(Tc=25℃)…………………… 36W VCBO —— Collector-Base Voltage …………………………… 32V VCEO —— Collector-Emitter Voltage ………………………… 32V VCES —— Collector-Emitter Voltage ………………………… 32V VEBO——Emitter-Base Voltage………………………………… 5V IC——Collector Current Pulse) ( ………………………………… 7A IC——Collector Current DC) ( …………………………………… 4A IB——Base Current………………………………………………1A
1―Emitter, E
2―Collector,C 3―Base,B
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol Characteristics Min Typ Max Unit Test Conditions
ICBO IEBO *HFE(1) *HFE(2) *HFE(3) *VCE(sat) *VBE(on) VCEO(sus) ft
Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Sustaining Voltage Current Gain-Bandwidth Product 32 3 40 85 50 0.2 130 140
100 1
μA mA
VCB=32V, IE=0 VEB=5V, IC=0 VCE=5V, IC=10mA VCE=1V, IC=500mA VCE=1V, IC=2A
0.5 1.1
V V V MHz
IC=2A, IB=0.2A VCE=1V, IC=2A IC=100mA, IB=0 VCE=1V, IC=250mA,
* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed
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