HSBD437

Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T R A N S I S T O R HSBD437 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg ——Storage Temperature………………………… -55~150℃ T j —— Junction Temperature ……………………………… 1 50 ℃ PC——Collector Dissipation（Tc=25℃）…………………… 36W VCBO —— Collector-Base Voltage …………………………… 45V VCEO —— Collector-Emitter Voltage ………………………… 45V VCES —— Collector-Emitter Voltage ………………………… 45V VEBO——Emitter-Base Voltage………………………………… 5V IC——Collector Current Pulse） （ ………………………………… 7A IC——Collector Current DC） （ …………………………………… 4A IB——Base Current………………………………………………1A 1―Emitter, E 2―Collector，C 3―Base，B █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol ICBO IEBO hFE(1) *hFE(2) *hFE(2) *VCE(sat) *VBE(ON) VCEO(SUS) fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Sustaining Voltage 45 3 MHz Characteristics Collector Cut-off Current Emitter-Base Cut-off Current DC Current Gain 30 85 40 0.2 0.6 1.2 V V 130 140 Min Typ Max 100 1 Unit μA mA Test Conditions VCB=45V, IE=0 VEB=5V, IC=0 VCE=5V, IC=10mA VCE=1V, IC=500mA VCE=1V, IC=2A Ic=2A, IB=0.2A Ic=2A, VCE=1V Ic=100mA,IB=0 Ic=250mA, VCE=1V Current Gain-Bandwidth Product * Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed