HSBD438

Shantou Huashan Electronic Devices Co.,Ltd. PN P S I L I C O N T R A N S I S T O R HSBD438 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg ——Storage Temperature………………………… -55~150℃ T j —— Junction Temperature ……………………………… 1 50 ℃ PC——Collector Dissipation（Tc=25℃）…………………… 36W VCBO —— Collector-Base Voltage …………………………… -45V VCEO —— Collector-Emitter Voltage ………………………… -45V VCES —— Collector-Emitter Voltage ………………………… -45V VEBO——Emitter-Base Voltage………………………………… -5V IC——Collector Current Pulse） （ ………………………………… -7A IC——Collector Current（DC）………………………………… -4A IB——Base Current………………………………………………-1A 1―Emitter, E 2―Collector，C 3―Base，B █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol ICBO IEBO hFE(1) *hFE(2) *hFE(2) *VCE(sat) *VBE(ON) VCEO(SUS) fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Sustaining Voltage -45 3 MHz Characteristics Collector Cut-off Current Emitter-Base Cut-off Current DC Current Gain 30 85 40 -0.2 -0.6 -1.2 V V 140 140 Min Typ Max -100 -1 Unit μA mA Test Conditions VCB=-45V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-10mA VCE=-1V, IC=-500mA VCE=-1V, IC=-2A Ic=-2A, IB=-0.2A Ic=-2A, VCE=-1V Ic=-100mA,IB=0 Ic=-250mA, VCE=-1V Current Gain-Bandwidth Product * Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed