0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
HSBD441

HSBD441

  • 厂商:

    HUASHAN

  • 封装:

  • 描述:

    HSBD441 - NPN SILICON TRANSISTOR - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

  • 数据手册
  • 价格&库存
HSBD441 数据手册
Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T R A N S I S T O R HSBD441 █  APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS( Ta=25℃) T stg ——Storage Temperature………………………… - 55~150℃ T j ——J unction Temperature……………………………… 1 50℃   PC——Collector Dissipation (T c=25℃)…………………… 36W VCBO —— Collector-Base Voltage …………………………… 80V VCEO —— Collector-Emitter Voltage………………………… 80V VCES —— Collector-Emitter Voltage ………………………… 80V VEBO —— Emitter-Base Voltage………………………………… 5V 1―Emitter, E 2―Collector,C 3―Base, B   IC——Collector Current Pulse)………………………………… 7A (  C——Collector Current DC) I ( …………………………………… 4A I  B——Base Current………………………………………………1A █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol  Characteristics  Min  Typ  Max  Unit   Test Conditions   ICBO IEBO ICES Collector Cut-off Current Emitter Cut-off Current Collector Cut-off Current       15  40  15        80  3        130  140      0.58        100  μA  VCB=80V, IE=0 1        0.8    1.5      mA  VEB=5V, IC=0       V  V  V  V  VCE=5V, IC=10mA  VCE=1V, IC=500mA  VCE=1V, IC=2A  IC=2A, IB =0.2A  VCE=5V, IC=10mA VCE=1V, IC=2A IC=100mA, IB=0 100  μA  VCE=80V, VEB=0 *HFE(1)  DC Current Gain  *HFE(2)  DC Current Gain  *HFE(3)  DC Current Gain  *VCE(sat)  Collector- Emitter Saturation Voltage   *VBE(on1) *VBE(on2) VCEO(sus) ft Base-Emitter On Voltage Base-Emitter On Voltage Collector-Emitter Sustaining Voltage Current Gain-Bandwidth Product MHz  VCE=1V, IC=250mA, * Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed
HSBD441 价格&库存

很抱歉,暂时无法提供与“HSBD441”相匹配的价格&库存,您可以联系我们找货

免费人工找货