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1N4001

1N4001

  • 厂商:

    HY(宏一)

  • 封装:

  • 描述:

    1N4001 - PLASTIC SILICON RECTIFIERS - HY ELECTRONIC CORP.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N4001 数据手册
1N4001 thru 1N4007 PLASTIC SILICON RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Amperes DO- 41 FEATURES ●Low cost ●Diffused junction ●Low forward voltage drop ●Low reverse leakage current ●High current capability ●The plastic material carries UL recognition 94V-0 1.0(25.4) MIN. .034(0.9) DIA .028(0.7) .205(5.2) MAX .107(2.7) DIA .080(2.0) 1.0(25.4) MIN. MECHANICAL DATA ●Case: JEDEC DO-41 molded plastic ●Polarity: Color band denotes cathode ●Weight: 0.012 ounces , 0.34 grams ●Mounting position :Any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed On Rated Load (JEDEC Method) Maximum Forward Voltage at 1.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Operating Temperature Range Storage Temperature Range @TJ=25℃ @TJ=100℃ @TA=75 ℃ SYMBOL 1N4001 VRRM VRMS VDC I(AV) 50 35 50 1N4002 100 70 100 1N4003 200 140 200 1N4004 400 280 400 1.0 1N4005 600 420 600 1N4006 800 560 800 1N4007 1000 700 1000 UNIT V V V A IFSM VF IR CJ RθJC TJ TSTG 30 1.1 5.0 50 15 26 -55 to +125 -55 to +125 A V uA pF ℃/W ℃ ℃ NOTE:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 2.Thermal resistance junction of ambient ~3~ RATING AND CHARACTERISTIC CURVES 1N4001 thru 1N4007 FIG. 1 - FORWARD CURRENT DERATING CURVE 1.0 AVERAGE FORWARD CURRENT AMPERES SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT 50 PEAK FORWARD SURGE CURRENT AMPERES 40 PULSE WIDTH 8.3ms SINGLE HALF-SINE-WAVE (JEDEC METHOD) 0.8 0.6 30 0.4 20 0.2 0 25 50 75 100 125 150 175 10 0 1 2 5 10 20 50 100 AMBIENT TEMPERATURE. ℃ NUMBER OF CYCLES AT 60Hz FIG. 3 – TYPICAL JUNCTION CAPACITANCE 100 INSTANTANEOUS FORWARD CURRENT(A) 60 40 CAPACITANCE,(pF) 10 FIG.4 – TYPICAL FORWARD CHARACTERISTICS 1.0 TJ = 25° C 20 10 4 TJ = 25°C f = 1 MHz 0.1 2 PULSE WIDTH 300us 0.01 1 1 4 10 40 100 0 0.2 1.2 1.4 0.4 0.6 0.8 1.0 1.6 1.8 4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS REVERSE VOLTAGE ,VOLTS ~4~
1N4001
### 物料型号 - 型号范围:1N4001至1N4007

### 器件简介 - 器件类型:PLASTIC SILICON RECTIFIERS(塑料硅整流器) - 反向电压:50至1000伏特 - 正向电流:1.0安培

### 引脚分配 - 封装类型:DO-41 - 尺寸:直径0.9英寸(22.9毫米),高度0.7英寸(17.8毫米)

### 参数特性 - 低成本 - 扩散结 - 低正向电压降 - 低反向漏电流 - 高电流能力:1.0安培 - 塑料材料符合UL 94V-0认证

### 功能详解 - 最大重复峰值反向电压(VRRM):50至1000伏特 - 最大RMS电压(VRMS):35至700伏特 - 最大直流阻断电压(Voc):50至1000伏特 - 最大平均正向整流电流(I(AV)):1.0安培 - 最大正向电压在1.0A直流下(VF):未提供具体数值 - 最大直流反向电流在额定直流阻断电压下(IR):5.0至50微安 - 典型结电容(CJ):15至100皮法 - 典型热阻(RBJC):26°C/W - 工作温度范围(TJ):-55至+125°C - 存储温度范围(TSTG):-55至+125°C

### 应用信息 - 适用于单相、半波、6kHz的电阻性或电感性负载 - 对于电容性负载,电流需降低20%

### 封装信息 - 重量:0.012盎司(0.34克) - 安装位置:任意 - 尺寸:0.205英寸(5.2毫米)最大宽度,0.034英寸(0.9毫米)直径
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