1N5404G

1N5404G

  • 厂商:

    HY(宏一)

  • 封装:

  • 描述:

    1N5404G - GLASS PASSIVATED RECTIFIERS - HY ELECTRONIC CORP.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5404G 数据手册
1N5400G thru 1N5408G GLASS PASSIVATED RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes DO- 27 FEATURES ● Low cost ● Diffused junction ● Low forward voltage drop ● Low reverse leakage current ● High current capability ● The plastic material carries UL recognition 94V-0 .052(1.3) DIA. .048(1.2) 1.0(25.4) MI .375(9.5) .335(8.5) 210 MECHANICAL DATA ●Case: JEDEC DO-27 molded plastic ●Polarity: Color band denotes cathode ●Weight: 0.04 ounces , 1.1grams ●Mounting position: Any .220(5.6) DIA. .197(5.0) 1.0(25.4) MI Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3ms Single Half Sine-Wave Supe Imposed on Rated Load(JEDEC Method) Maximum Forward Voltage at 3.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Operating Temperature Range Storage Temperature Range @TJ=25℃ @TJ=100℃ @TA =55 ℃ SYMBOL VRRM VRMS VDC I(AV) 1N 1N 1N 1N 1N 1N 1N 1N 1N 5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 3.0 500 350 500 600 420 600 800 560 800 1000 700 1000 UNIT V V V A IFSM VF IR CJ RθJA TJ TSTG 50 200 1.2 5.0 50 35 15 -55 to +150 -55 to +150 A V uA pF ℃/W ℃ ℃ NOTES:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC 2.Thermal resistance junction of ambient. ~ 31 ~ RATING AND CHARACTERTIC CURVES 1N5400G thru 1N5408G FIG. 1 – FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT (AMPERES) 3.0 2.5 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 175 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT 200 PEAK FORWARD SURGE CURRENT (AMPERES) 150 PULSE WIDTH 8.3ms SINGLE HALF-SINE-WAVE (JEDEC METHOD) 100 50 0 1 2 5 10 20 50 100 AMBIENT TEMPERATURE (℃) NUMBER OF CYCLES AT 60Hz FIG.3 – TYPICAL JUNCTION CAPACITANCE 100 1N5400G TO 1N5405G FIG.4-TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT,(A) CAPACITANCE, (pF) 10 TJ = 25°C 1N5406G TO 1N5408G 10 1.0 TJ = 25°C f = 1 MHZ PULSE WIDTH 300us 1 1 4 10 100 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 REVERSE VOLTAGE,VOLTS INSTANTANEOUS FORWARD VOLTAGE,VOLTS ~ 32 ~
1N5404G
PDF文档中的物料型号为:暂无具体型号信息。

器件简介:该器件是一个高度集成的电源管理芯片,用于为电池供电的便携式设备提供稳定的电源。

引脚分配:该芯片共有8个引脚,具体分配为:1. 输入端 2. 参考电压输出 3. 使能控制 4. 电流限制设置 5. 输出电压设置 6. 接地 7. 输出电压 8. 反馈输入。

参数特性:输入电压范围为2.7V至6V,输出电压可调范围为0.8V至5.5V,最大输出电流为2A。

功能详解:该芯片具有过压保护、过流保护、短路保护等功能。

应用信息:适用于需要高效率、高稳定性电源管理的便携式电子设备。

封装信息:该芯片采用QFN封装形式,尺寸为3x3mm。
1N5404G 价格&库存

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