1N5819

1N5819

  • 厂商:

    HY(宏一)

  • 封装:

  • 描述:

    1N5819 - SCHOTTKY BARRIER RECTIFIERS - HY ELECTRONIC CORP.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5819 数据手册
1N5817 thru 1N5819 SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Amperes DO- 41 FEATURES ● Metal-Semiconductor junction with gard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low vlotage, high frequency inverters, 1.0(25.4) MIN. .034(0.9) DIA .028(0.7) free wheeling, and polarity protection applications .205(5.2) MAX .107(2.7) DIA .080(2.0) MECHANICAL DATA ●Case: JEDEC DO-41 molded plastic ●Polarity: Color band denotes cathode ●Weight: 0.012 ounces , 0.34 grams ●Mounting position: Any 1.0(25.4) MIN. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surage Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) Maximum Forward Voltage at 1.0A DC Maximum Forward Voltage at 3.0A DC Maximum DC Reverse Current at Rated DC Bolcking Voltage Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Operating Temperature Range Storage Temperature Range @TJ=25℃ @TJ=100℃ @TA =75℃ SYMBOL VRRM VRMS VDC I(AV) 1N5817 20 14 20 1N5818 30 21 30 1.0 1N5819 40 28 40 UNIT V V V A IFSM VF VF IR CJ RθJA TJ TSTG 0.450 0.750 40 0.550 0.875 1.0 10 110 80 -55 to +150 -55 to +150 0.600 0.900 A V V mA pF ℃/W ℃ ℃ NOTES: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC 2.Thermal resistance junction to ambient, ~ 145 ~ RATING AND CHARACTERTIC CURVES 1N5817 thru 1N5819 FIG. 1 – FORWARD CURRENT DERATING CURVE 1.0 PEAK FORWARD SURGE CURRENT, (AMPERES) AVERAGE FORWARD CURRENT AMPERES 40 FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT 0.8 30 0.6 20 0.4 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0.2 0 10 PULSE WIDTH 8.3mS SINGLE HALF-SINE-WAVE (JEDEC METHOD) 0 1 2 5 10 20 50 100 25 50 75 100 125 150 175 AMBIENT TEMPERATURE (℃) NUMBER OF CYCLES AT 60Hz FIG.3 – TYPICAL JUNCTION CAPACITANCE 1000 INSTANTANEOUS FORWARD CURRENT, (A) 10 FIG.4-TYPICAL FORWARD CHARACTERISTICS 1N5817 CAPACITANCE, (pF) 100 1N5818 1N5819 1.0 T J= 25°C f = 1 MHz T J = 25°C PULSE WIDTH 300us 1 1 4 10 100 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 REVERSE VOLTAGE, (VOLTS) INSTANTANEOUS FORWARD VOLTAGE, (VOLTS) ~ 146 ~
1N5819
1. 物料型号: - 1N5817、1N5818、1N5819是肖特基势垒整流器的型号。

2. 器件简介: - 这些器件是金属-半导体结带有保护环的外延结构肖特基势垒整流器,具有低正向电压降、高电流能力,适用于低电压、高频逆变器、自由轮流通路和极性保护应用。

3. 引脚分配: - 根据JEDEC DO-41塑封标准,带有色环的一端表示阴极。

4. 参数特性: - 最大重复峰值反向电压:1N5817为20V,1N5818为30V,1N5819为40V。 - 最大RMS电压:1N5817为14V,1N5818为21V,1N5819为28V。 - 最大直流阻断电压:与最大重复峰值反向电压相同。 - 最大平均正向整流电流:在75°C环境温度下为1.0A。 - 最大正向电压:在1.0A直流下分别为0.450V、0.550V和0.600V;在3.0A直流下分别为0.750V、0.875V和0.900V。 - 最大直流反向电流:在额定直流阻断电压下分别为1.0mA和10mA。 - 典型结电容:1N5817为110pF。 - 典型热阻:80°C/W。 - 工作温度范围:-55至+150℃。 - 存储温度范围:-55至+150℃。

5. 功能详解: - 这些肖特基整流器具有低正向电压降和高电流能力,适合用于低电压、高频应用。

6. 应用信息: - 用于低电压、高频逆变器、自由轮流通路和极性保护应用。

7. 封装信息: - 封装类型为JEDEC DO-41塑封塑料,任何位置都可安装,重量为0.012盎司或0.34克。
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