AA16-9DIL18

AA16-9 DIL18 16 Element Avalanche Photodiode Array Special characteristics: quantum efficiency >80% at λ 760-910 nm high speed, low noise good uniformity between elements low cross talk Parameters: no. of Elements Active Area / Element [µm] Gap / Separation [µm] Pitch [µm] Spectral Range Spectral Responsivity 1) (at 905 nm, M = 100) Max. Gain (Ipo= 1nA) Dark Current 1) (M = 100) Capacitance 1)/Element (M=100) Breakdown Voltage UBR (at ID = 2 µA) Rise Time at 905 nm, 50 Ω Cross-talk (at 905 nm) Photo Current Uniformity (at M= 50) Dark Current Uniformity (at M= 50) Operating Temperature Storage Temperature A A16-9 DIL18 16 648 * 208 Package DIL18: 18 17 16 15 14 13 12 11 10 112 320 450 … 1050 min. 55 A/W typ. 60 A/W typ. 100 typ. 5 nA 0.7 1 2 3 4 5 22.8 1.5 6 7 8 9 7.62 window 2.2 2.54 typ. 2 pF 100 … 300 V typ. 2 ns typ. 50 dB ± 20 % typ. ± 5 % ± 20 % typ. ± 5 % -20 ... +70 °C -60 ... +100 °C 7.5 Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1) measurement conditions: Setup of photo current 1.0 nA at M = 1 and irradiation by a IRED (880 nm, 80 nm bandwith). Increase the photo current up to 100 nA, (M = 100) by internal multiplication due to an increasing bias voltage. Function Element 1 Element 3 Element 5 Element 7 Element 9 Element 11 Element 13 Element 15 Guard Ring Element 16 Element 14 Element 12 Element 10 Common Anode Element 8 Element 6 Element 4 Element 2 w ww.silico n - sensor.co m Version: 06-03-03 Specification before: AD-LA-16-9-DIL 18 Order Number: 500038 w ww.pacifi c - sensor.co m 7.1 S pectral Responsivity at M = 1 s eries - 9 0,700 0,600 S pectral Responsivity at M = 100 s eries - 9 7 0 ,0 0 6 0 ,0 0 Responsivity (A/W) 0,400 0,300 0,200 0,100 0,000 400 500 600 700 800 900 1000 1100 W avelength (nm) Responsivity (AW) 0,500 5 0 ,0 0 4 0 ,0 0 3 0 ,0 0 2 0 ,0 0 1 0 ,0 0 0 ,0 0 400 500 600 700 800 900 1000 1100 W a v e le ngth (nm) Quantum Efficiency for M = 100 s eries - 9 1 0 0 ,0 9 0 ,0 8 0 ,0 7 0 ,0 6 0 ,0 QE 5 0 ,0 4 0 ,0 3 0 ,0 2 0 ,0 1 0 ,0 0 ,0 400 500 600 700 800 900 1000 1100 W a v e le ngth (nm) Example of DC-Operating Circuit: 16x Transimpedance Amplifier Maximum Ratings: max. electrical power dissipation max. optical peak value, once max. continous optical operation ( Pelectr. = Popt. * Sabs * M * UR ) Diode, protective circuit 400 mW at 22°C 200 mW for 1 s IPh (DC) ≤ 250 µA ≤ 1 mA for signal 50 µs "on" / 1 ms "off" Out 1 Application Hints: Current should be limited by a protecting resistor or current limiting IC inside the power supply. Use of low noise read-out - IC. For high gain applications bias voltage should be temperature compensated. For low light level applications, blocking of ambient light should be used. Out 16 C1 C2 C3 C16 GR AD-LA-16-9 Common Anode R -UR Handling Precautions: Soldering temperature 260 °C for max. 10 s. The device must be protected against solder flux vapour! min. Pin - length 2 mm ESD - protection Standard precautionary measures are sufficient. Storage Store devices in conductive foam. Avoid skin contact with window! Clean window with Ethyl alcohol if necessary. Do not scratch or abrade window. Silicon Sensor GmbH Ostendstr. 1 12459 Berlin Germany Phone: +49 (0)30-63 99 23 10 Fax: +49 (0)30-63 99 23 33 E-Mail: sales@silicon-sensor.de Deutschland: Inselkammerstraße 10 D-82008 Unterhaching Tel: 089 614 503-10 E-Mail: power@hy-line.de URL: www.hy-line.de Schweiz: Gründenstraße 82 CH-8247 Flurlingen Tel.: 052 647 42 00 E-Mail: power@hy-line.ch URL: www.hy-line.ch