BZX55C56

BZX55C56

  • 厂商:

    HY(宏一)

  • 封装:

  • 描述:

    BZX55C56 - ZENER DIODE - HY ELECTRONIC CORP.

  • 详情介绍
  • 数据手册
  • 价格&库存
BZX55C56 数据手册
BZX55C SERIES ZENER DIODE REVERSE VOLTAGE - 2.4 to 188 Volts DO - 35 .020 TYP. (0.51) 1.083(27.5) MIN FEATURES ● High reliability APPLICATIONS ● Voltage stabilization CONSTRUCTION ● Silicon epitaxial planar .150(3.8) MAX .079 MAX (2.0) 1.083(27.5) MIN Dimensions in inches and (millimeters) ABSOLUTE MAXIMUM RATINGS TJ=25℃ Parameter Power dissipation Z-current Junction temperature Storage temperature range Tstg Test Conditions I=4mm TL≤25℃ Type Symbol Pv Iz Value 500 Unit Mw MA Pv/Vz 175℃ ℃ ℃ -55 ~ +200 MAXIMUM THERMAL RESISTANCE TJ=25℃ Parameter Junction ambient Test Conditions I=4mm TL=constant Symbol RthJA Value 350 Unit K/W ELECTRICAL CHARACTERISTICS TJ=25℃ Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V ~ 399 ~ RATING AND CHARACTERISTIC CURVES BZX55C SERIES FIG. 2 - TOTAL POWER DISSIPATIONVS. AMBIENT TEMPERATURE 600 500 TOTAL POWER DISSIPATION(mw) 0 5 10 15 20 LEAD LENGTH (mm) 500 FIG. 1 - THERMAL RESISTANCE VS.LEAD LENGTH THERM.RESIST.JUNCTION / AMBIENT(K/M) 400 400 300 300 200 200 100 0 100 0 0 40 80 120 160 200 AMBIENT TEMPERATURE (°C) FIG.3 -TYPICAL CHANGE OF WORKING VOLTAGE UNDER OPERATING CONDITIONS AT Tamb=25°C 1000 VOLTAGE CHAGNE(mA) TJ=25°C RELATIVE VOLTAGE CHANGE FIG. 4 - TYPICAL CHANGE OF WORKING VOLTAGE VS. JUNCTION TEMPERATURE 1.3 VZtn=Vzt/Vz(25°C) 1.2 TKyz=10x10 K 1.1 -4/ 6x10-4/K 8x10-4/K 4x10-4/K 2x10-4/K 0 -2x10-4/K -4x10-4/K 100 Iz=5mA 1.0 10 0.9 1 0 5 15 10 Z-VOLTAGE (V) 20 25 0.8 -60 0 60 120 180 240 JUNCTION TEMPERATURE (°C) TEMPERATURE COEFFICIENT OF Vz (10-4/K) FIG.5 - TYPICAL CHANGE OF WORKING VOLTAGE VS. JUNCTION TEMPERATURE 15 DIODE CAPACITANCE (PF) 200 FIG.6 - DIODE CAPACITANCE VS.Z-VOLTAGE 10 150 VR=2V TJ=25°C 5 100 Iz=5mA 0 50 0 0 -5 0 10 20 30 40 50 0 5 10 15 20 25 Z-VOLTAGE(V) Z-VOLTAGE(V) ~ 400 ~ RATING AND CHARACTERISTIC CURVES BZX55C SERIES FIG.7 - FORWARD CURRENT VS. FORWARD VOLTAGE FORWARD CURRENT (mA) 100 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 0 0 4 8 12 16 20 Z-VOLTAGE(V) FORWARD VOLTAGE (V) TJ=25°C Z-CURRENT (mA) 100 80 60 40 20 FIG.8 - Z-CURRENT VS. Z-VOLTAGE Ptot=500mW Tamb=25°C FIG.9 - Z-CURRENT VS. Z-VOLTAGE ( Ω) 50 40 Z-CURRENT (mA) 30 20 Ptot=500mW Tamb=25°C 1000 FIG.10 - DIFFERENTIAL Z-RESISTANCE Vz VS. Z-VOLTAGE DIFFERENTIAL-RESISTANCE Iz=1mA 100 5mA 10 10 0 15 10m 1 0 5 10 15 TJ=25°C 20 25 20 25 30 35 Z-VOLTAGE(V) Z-VOLTAGE(V) FIG.11 - THERMAL RESPONSE THERMAL RESISTANCE FOR PULSE COND. (K/W) 1000 100 10 1 10-1 100 101 PULSE LENGTH (ms) 102 ~ 401 ~ BZX55C SERIES 500mW ZENER DIODES/DO-35/DL-35(MINI MELF) Nominal Zener Test Current OPRERATING AND STORAGE TEMPERATURE -55℃to+200℃ Maximum Zener Impedance TYPE IZT mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 IZK mA 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 Maximum Reverse Leakage Current Maximun Surge Current Maximum Regulation Current Min BZX55C2V4 2.28 BZX5C2V7 2.50 BZX55C3V0 2.80 BZX55C3V3 3.10 BZX55C3V6 3.40 BZX55C3V9 3.70 BZX55C4V3 4.00 BZX55C4V7 4.40 BZX55C5V1 4.80 BZX55C5V6 5.20 BZX55C6V2 5.80 BZX55C6V8 6.40 BZX55C7V5 7.00 BZX55C8V2 7.70 BZX55C9V1 8.50 BZX55C10 9.40 BZX55C11 10.4 BZX55C12 11.4 BZX55C13 12.4 BZX55C15 13.8 BZX55C16 15.3 BZX55C18 16.8 BZX55C20 18.8 BZX55C22 20.8 BZX55C24 22.8 BZX55C27 25.1 BZX55C30 28.0 BZX55C33 31.0 BZX55C36 34.0 BZX55C39 37.0 BZX55C43 40.0 BZX55C47 44.0 BZX55C51 48.0 BZX55C56 52.0 BZX55C62 58.0 BZX55C68 64.0 BZX55C75 70.0 BZX55C82 77.0 BZX55C91 85.0 BZX55C100 94.0 BZX55C110 104 BZX55C120 114 BZX55C130 124 BZX55C150 138 BZX55C160 153 BZX55C180 168 BZX55C188 188 NOTE: 1. Normal Tolerance ±5%. Max 2.56 2.90 3.20 3.50 3.80 4.10 4.60 5.00 5.40 6.00 6.60 7.20 7.90 8.70 9.60 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 80.0 87.0 96.0 106 116 127 141 156 171 191 212 ZZT @ IZT Ohms 85 85 85 85 85 85 75 60 35 25 10 8 7 7 10 15 20 20 26 30 40 50 55 55 80 80 80 80 80 90 90 110 125 135 150 200 250 300 450 450 600 800 1000 1200 1500 1800 2000 ZZT @ IZK Ohms 600 600 600 600 600 600 600 600 550 450 200 150 50 50 50 70 70 90 110 110 170 170 220 220 220 220 220 220 220 500 600 700 700 1000 1000 1000 1500 2000 5000 5000 5000 5000 5000 5000 5000 5000 5000 IR μA 50 10 4.0 2.0 2.0 2.0 1.0 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 @ VR IZM mA ﹣0.085 ﹣0.080 ﹣0.075 ﹣0.070 ﹣0.065 ﹣0.060 ±0.055 ±0.030 ±0.030 ﹢0.038 ﹢0.045 ﹢0.050 ﹢0.058 ﹢0.062 ﹢0.068 ﹢0.075 ﹢0.076 ﹢0.077 ﹢0.079 ﹢0.082 ﹢0.083 ﹢0.085 ﹢0.086 ﹢0.087 ﹢0.088 ﹢0.090 ﹢0.091 ﹢0.092 ﹢0.093 ﹢0.094 ﹢0.095 ﹢0.095 ﹢0.096 ﹢0.096 ﹢0.096 ﹢0.096 ﹢0.096 ﹢0.096 ﹢0.096 ﹢0.096 ﹢0.096 ﹢0.096 ﹢0.096 ﹢0.096 ﹢0.096 ﹢0.096 ﹢0.096 mA 155 135 125 115 105 95 90 85 80 70 64 58 53 74 43 40 36 32 29 27 24 21 20 18 16 14 13 12 11 10 9.2 8.5 7.8 7.0 6.4 5.9 5.3 4.8 4.4 4.0 3.6 3.3 3.0 2.6 2.5 2.2 2.0 Volts 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 5.0 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 ~ 402 ~
BZX55C56
### 物料型号 - BZX55C系列:该系列包含多种Zener二极管,例如BZX55C2V4、BZX55C2V7等,具体型号根据额定Zener电压不同而有所差异。

### 器件简介 - Zener二极管:是一种特殊设计的硅二极管,用于电压稳定,其特点是在反向偏置时在特定的Zener电压下导电。

### 引脚分配 - DO-35/DL-35(MINI MELF):这是器件的封装形式,说明这些Zener二极管采用小型MELF封装,具有两个引脚。

### 参数特性 - 反向电压:2.4到188伏特不等,具体值依据型号而定。 - 最大Zener阻抗:依据型号不同,其值在几十到几百欧姆之间。 - 最大反向漏电流:依据型号不同,其值从微安到毫安级别。 - 最大浪涌电流:依据型号不同,其值从几安到几十安培不等。 - 最大调节电流:依据型号不同,其值从几毫安到几十毫安不等。

### 功能详解 - 电压稳定:Zener二极管的主要功能是在电路中提供稳定的参考电压,防止电压过高。

### 应用信息 - 应用:主要用于电压稳定,也可用于电压钳位和信号整形。

### 封装信息 - DO-35/DL-35(MINI MELF):表示这些Zener二极管使用的是小型MELF封装,这种封装适合表面贴装技术。
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