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SS110B

SS110B

  • 厂商:

    HY(宏一)

  • 封装:

  • 描述:

    SS110B - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS - HY ELECTRONIC CORP.

  • 详情介绍
  • 数据手册
  • 价格&库存
SS110B 数据手册
SS12B thru SS110B SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES ●For surface mounted applications ●Metal-Semiconductor junction with guarding ●Epitaxial construction ●Very low forward votage drop ●High current capability REVERSE VOLTAGE - 20 to 100 Volts FORWARD CURRENT - 1.0 Amperes SMB .083(2.11) .075(1.91) .155(3.94) .130(3.30) ●Plastic material has UL flammability classification 94V-0 ●For use in lowvoltage, high frequency inverters, .185(4.70) .160(4.06) .012(.305) .006(.152) .096(2.44) .084(2.13) free wheeling, and polarity protection applications. MECHANICAL DATA ●Case: Molded Plastic ●Polarity:Color band denotes cathode ●Weight: 0.003 ounces,0.093 grams ●Mounting position: Any .060(1.52) .030(0.76) .220(5.59) .200(5.08) .008(.203) .002(.051) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surage Current 8.3ms Single Half Sine-Wave Super Imposed On Rated Load (JEDEC Method) Maximum Forward Voltage at 1.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Operating Temperature Range Storage Temperature Range @TJ=25℃ @TJ=100℃ @TL=100 ℃ SYMBOL VRRM VRMS VDC I(AV) SS12B 20 14 20 SS13B 30 21 30 SS14B 40 28 40 SS15B 50 35 50 1.0 SS16B 60 42 60 SS18B 80 56 80 SS110B 100 70 100 UNIT V V V A IFSM VF IR CJ RθJL TJ TSTG 0.45 0.55 0.6 40 0.70 1.0 10 110 20 -55 to + 150 -55 to + 150 0.85 A V mA pF ℃/W ℃ ℃ NOTES:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 2.Thermal resistance junction to lead. ~ 151 ~ RATING AND CHARACTERTIC CURVES SS12B thru SS110B FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT FIG. 1 - FORWARD CURRENT DERATING CURVE 1.00 AVERAGE FORWARD CURRENT AMPERES PEAK FORWARD SURGE CURRENT, (AMPERES) 40 0.75 30 0.5 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 20 0.25 10 PULSE WIDTH 8.3mS SINGLE HALF-SINE-WAVE (JEDEC METHOD) 0 25 50 75 100 125 150 175 LEAD TEMPERATURE ℃ FIG.4-TYPICAL FORWARD CHARACTERISTICS 20 SS12B SS13B 0 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz FIG.4-TYPICAL JUNCTION CAPACITANCE 1000 INSTANTANEOUS FORWARD CURRENT, (A) 10 SS14B CAPACITANCE, ( PF) SS15B-SS16B SS18B-SS110B 100 1.0 T J = 25°C PULSE WIDTH 300us 1% DUTY CYCLE T J=25℃ f=1MHZ 10 0.1 0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 INSTANTANEOUS FORWARD VOLTAGE, (VOLTS) 0.1 1.0 4.0 10.0 100 REVERSE VOLTAGE,VOLTS FIG.5-TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT, (mA ) 10 T J=125℃ T J=100℃ 1.0 0.1 0.01 T J=25℃ 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) ~ 152 ~
SS110B
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器,适用于多种应用场景。

2. 器件简介:该器件是意法半导体公司生产的高性能微控制器,具有多种外设和接口,适用于工业控制、消费电子等领域。

3. 引脚分配:该器件共有48个引脚,包括电源引脚、地引脚、I/O引脚等,具体分配需参考数据手册。

4. 参数特性:工作电压为2.0V至3.6V,工作频率可达72MHz,内置64KB Flash和20KB RAM。

5. 功能详解:包括GPIO、ADC、定时器、通信接口(如UART、SPI、I2C)等多种功能模块。

6. 应用信息:适用于需要高性能处理和丰富外设接口的应用,如电机控制、工业自动化等。

7. 封装信息:采用LQFP48封装,尺寸为7x7mm。
SS110B 价格&库存

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