GM71C18163CL-6

1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM GM71C18163C GM71CS18163CL Description T he GM71C(S)18163C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71C(S)18163C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C(S)18163C/CL offers Extended Data out(EDO) Mode as a high speed access mode. Multiplexed address inputs permit the GM71C(S)18163C/CL to be packaged in standard 400 mil 42pin plastic SOJ, and standard 400mil 44(50)pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. Features * 1,048,576 Words x 16 Bit Organization * Extended Data Out Mode Capability * Single Power Supply (5V+/-10%) * Fast Access Time & Cycle Time (Unit: ns) tRAC tCAC GM71C(S)18163C/CL-5 GM71C(S)18163C/CL-6 GM71C(S)18163C/CL-7 50 60 70 13 15 18 tRC 84 104 124 tHPC 20 25 30 Pin Configuration 42 SOJ VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC WE RAS NC NC A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 * Low Power Active : 1045/935/825mW (MAX) Standby : 11mW (CMOS level : MAX) 0.83mW (L-version : MAX) * RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability * All inputs and outputs TTL Compatible * 1024 Refresh Cycles/16ms * 1024 Refresh Cycles/128ms (L-version) * Self Refresh Operation (L-version) * Battery Back Up Operation (L-version) * 2 CAS byte Control 44(50) TSOP II VSS I/O15 I/O14 I/O13 I/O12 VSS I/O11 I/O10 I/O9 I/O8 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS NC NC WE RAS A11 A10 A0 A1 A2 A3 VCC 15 16 17 18 19 20 21 22 23 24 25 36 35 34 33 32 31 30 29 28 27 26 VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC 1 2 3 4 5 6 7 8 9 10 11 50 49 48 47 46 45 44 43 42 41 40 VSS I/O15 I/O14 I/O13 I/O12 VSS I/O11 I/O10 I/O9 I/O8 NC NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS (Top View) Rev 0.1 / Apr’01 GM71C18163C GM71CS18163CL Pin Description Pin A0-A9 A0-A9 I/O0-I/O15 RAS UCAS, LCAS Function Address Inputs Refresh Address Inputs Data Input/Data Output Row Address Strobe Column Address Strobe Pin WE OE VCC VSS NC Function Read/Write Enable Output Enable Power (+5V) Ground No Connection Ordering Information Type No. GM71C(S)18163CJ/CLJ -5 GM71C(S)18163CJ/CLJ -6 GM71C(S)18163CJ/CLJ -7 Access Time 50ns 60ns 70ns Package 400 Mil 42 Pin Plastic SOJ GM71C(S)18163CT/CLT -5 GM71C(S)18163CT/CLT -6 GM71C(S)18163CT/CLT -7 50ns 60ns 70ns 400 Mil 44(50) Pin Plastic TSOP II Absolute Maximum Ratings* Symbol TA TSTG VIN/OUT VCC IOUT PD Parameter Ambient Temperature under Bias Storage Temperature Voltage on any Pin Relative to VSS Supply voltage Relative to VSS Short Circuit Output Current Power Dissipation Rating 0 ~ +70 -55 ~ +125 -1.0 ~ +7.0V -1.0 ~ +7.0V 50 1.0 Unit C C V V mA W Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability. Rev 0.1 / Apr’01 GM71C18163C GM71CS18163CL Recommended DC Operating Conditions (TA = 0 ~ +70C) Symbol VCC VIH VIL Parameter Supply Voltage Input High Voltage Input Low Voltage Min 4.5 2.4 -1.0 Typ 5.0 - Max 5.5 6.0 0.8 Unit V V V Note: All voltage referred to Vss. The supply voltage with all VCC pins must be on the same level. The supply voltage with all VSS pins must be on the same level. Truth Table RAS H L L L L L L L L L L L L H to L H to L H to L L L LCAS D L H L L H L L H L L H L H L L H L UCAS D H L L H L L H L L H L L L H L H L WE D H H H L L L L L L H to L H to L H to L D D D D H OE D L L L D D D H H H L to H L to H L to H D D D D H Output Open Valid Valid Valid Open Open Open Undefined Undefined Undefined Valid Valid Valid Open Open Open Open Open Operation Standby Lower byte Upper byte Word Lower byte Upper byte Word Lower byte Upper byte Word Lower byte Upper byte Word Word Word Word Word CBR Refresh or Self Refresh (L-series) RAS-only Refresh cycle Read-modify -write cycle Delayed Write cycle Early write cycle Read cycle Notes 1,3 1,3 1,2,3 1,2,3 1,3 1,3 1,3 1,3 Read cycle (Output disabled) Notes: 1. H: High (inactive) L: Low(active) D: H or L 2. tWCS >= 0ns Early write cycle tWCS =VCC - 0.2V, DOUT = High-Z) CAS-before-RAS Refresh Current (tRC = tRC min) 50ns 60ns 70ns 50ns 60ns 70ns 50ns 60ns 70ns 50ns 60ns 70ns Min 2.4 0 - Max VCC 0.4 190 170 150 2 190 170 150 185 165 145 1 150 190 170 150 500 Unit V V Note mA 1, 2 ICC2 mA ICC3 mA 2 ICC4 mA 1, 3 ICC5 mA uA 5 ICC6 mA ICC7 ICC8 ICC9 IL(I) IL(O) Battery Back Up Operating Current(Standby with CBR Ref.) (CBR refresh, tRC=125us, tRAS