1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
GM71C18163C GM71CS18163CL
Description
T he GM71C(S)18163C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71C(S)18163C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C(S)18163C/CL offers Extended Data out(EDO) Mode as a high speed access mode. Multiplexed address inputs permit the GM71C(S)18163C/CL to be packaged in standard 400 mil 42pin plastic SOJ, and standard 400mil 44(50)pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
Features
* 1,048,576 Words x 16 Bit Organization * Extended Data Out Mode Capability * Single Power Supply (5V+/-10%) * Fast Access Time & Cycle Time
(Unit: ns)
tRAC tCAC
GM71C(S)18163C/CL-5 GM71C(S)18163C/CL-6 GM71C(S)18163C/CL-7 50 60 70 13 15 18
tRC
84 104 124
tHPC
20 25 30
Pin Configuration 42 SOJ
VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC WE RAS NC NC A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22
* Low Power Active : 1045/935/825mW (MAX) Standby : 11mW (CMOS level : MAX) 0.83mW (L-version : MAX) * RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability * All inputs and outputs TTL Compatible * 1024 Refresh Cycles/16ms * 1024 Refresh Cycles/128ms (L-version) * Self Refresh Operation (L-version) * Battery Back Up Operation (L-version) * 2 CAS byte Control
44(50) TSOP II
VSS I/O15 I/O14 I/O13 I/O12 VSS I/O11 I/O10 I/O9 I/O8 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS NC NC WE RAS A11 A10 A0 A1 A2 A3 VCC
15 16 17 18 19 20 21 22 23 24 25 36 35 34 33 32 31 30 29 28 27 26
VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC
1 2 3 4 5 6 7 8 9 10 11
50 49 48 47 46 45 44 43 42 41 40
VSS I/O15 I/O14 I/O13 I/O12 VSS I/O11 I/O10 I/O9 I/O8 NC
NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS
(Top View)
Rev 0.1 / Apr’01
GM71C18163C GM71CS18163CL
Pin Description
Pin
A0-A9 A0-A9 I/O0-I/O15 RAS UCAS, LCAS
Function
Address Inputs Refresh Address Inputs Data Input/Data Output Row Address Strobe Column Address Strobe
Pin
WE OE VCC VSS NC
Function
Read/Write Enable Output Enable Power (+5V) Ground No Connection
Ordering Information
Type No.
GM71C(S)18163CJ/CLJ -5 GM71C(S)18163CJ/CLJ -6 GM71C(S)18163CJ/CLJ -7
Access Time
50ns 60ns 70ns
Package
400 Mil 42 Pin Plastic SOJ
GM71C(S)18163CT/CLT -5 GM71C(S)18163CT/CLT -6 GM71C(S)18163CT/CLT -7
50ns 60ns 70ns
400 Mil 44(50) Pin Plastic TSOP II
Absolute Maximum Ratings*
Symbol TA TSTG VIN/OUT VCC IOUT PD Parameter
Ambient Temperature under Bias Storage Temperature Voltage on any Pin Relative to VSS Supply voltage Relative to VSS Short Circuit Output Current Power Dissipation
Rating
0 ~ +70 -55 ~ +125 -1.0 ~ +7.0V -1.0 ~ +7.0V 50 1.0
Unit
C C V V mA W
Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability.
Rev 0.1 / Apr’01
GM71C18163C GM71CS18163CL
Recommended DC Operating Conditions (TA = 0 ~ +70C)
Symbol VCC VIH VIL Parameter
Supply Voltage Input High Voltage Input Low Voltage
Min
4.5 2.4 -1.0
Typ
5.0 -
Max
5.5 6.0 0.8
Unit
V V V
Note: All voltage referred to Vss. The supply voltage with all VCC pins must be on the same level. The supply voltage with all VSS pins must be on the same level.
Truth Table
RAS
H L L L L L L L L L L L L H to L H to L H to L L L
LCAS
D L H L L H L L H L L H L H L L H L
UCAS
D H L L H L L H L L H L L L H L H L
WE
D H H H L L L L L L H to L H to L H to L D D D D H
OE
D L L L D D D H H H L to H L to H L to H D D D D H
Output
Open Valid Valid Valid Open Open Open Undefined Undefined Undefined Valid Valid Valid Open Open Open Open Open
Operation
Standby Lower byte Upper byte Word Lower byte Upper byte Word Lower byte Upper byte Word Lower byte Upper byte Word Word Word Word Word CBR Refresh or Self Refresh (L-series) RAS-only Refresh cycle Read-modify -write cycle Delayed Write cycle Early write cycle Read cycle
Notes
1,3
1,3
1,2,3
1,2,3
1,3
1,3
1,3 1,3
Read cycle (Output disabled)
Notes: 1. H: High (inactive) L: Low(active) D: H or L 2. tWCS >= 0ns Early write cycle tWCS =VCC - 0.2V, DOUT = High-Z) CAS-before-RAS Refresh Current (tRC = tRC min) 50ns 60ns 70ns 50ns 60ns 70ns 50ns 60ns 70ns 50ns 60ns 70ns
Min
2.4 0 -
Max
VCC 0.4 190 170 150 2 190 170 150 185 165 145 1 150 190 170 150 500
Unit
V V
Note
mA
1, 2
ICC2
mA
ICC3
mA
2
ICC4
mA
1, 3
ICC5
mA uA 5
ICC6
mA
ICC7 ICC8 ICC9 IL(I) IL(O)
Battery Back Up Operating Current(Standby with CBR Ref.) (CBR refresh, tRC=125us, tRAS
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