GM71S17403CL-5

GM71C(S)17403C/CL 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM Description T he GM71C(S)17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71C(S)17403C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C(S)17403C/CL offers Extended Data Out (EDO) Mode as a high speed access mode. Multiplexed address inputs permit the GM71C(S)17403C/CL to be packaged in a standard 300 mil 24(26) pin SOJ and a standard 300mil 24(26) pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features include single power supply 5V+/-10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. Features * 4,194,304 Words x 4 Bit Organization * Extended Data Out Mode Capability * Single Power Supply (5V+/-10%) * Fast Access Time & Cycle Time (Unit: ns) tRAC tCAC GM71C(S)17403C/CL-5 GM71C(S)17403C/CL-6 GM71C(S)17403C/CL-7 50 60 70 13 15 18 tRC 84 104 124 tHPC 20 25 30 Pin Configuration 24(26) SOJ VCC I/O1 I/O2 WE RAS NC A10 A0 A1 A2 A3 1 2 3 4 5 6 26 25 24 23 22 21 * Low Power Active : 660/605/550mW (MAX) Standby : 11mW (CMOS level : MAX) : 0.83mW (L-version : MAX) * RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability * All inputs and outputs TTL Compatible * 2048 Refresh Cycles/32ms * 2048 Refresh Cycles/128ms (L-version) * Battery Backup Operation (L-version) * Test Function : 16bit parallel test mode 24(26) TSOP II VSS I/O4 I/O3 CAS OE A9 A8 A7 A6 A5 A4 VSS VCC I/O1 I/O2 WE RAS A11 A10 A0 A1 A2 A3 1 2 3 4 5 6 26 25 24 23 22 21 VSS I/O4 I/O3 CAS OE A9 A8 A7 A6 A5 A4 VSS 8 9 10 11 12 19 18 17 16 15 14 8 9 10 11 12 19 18 17 16 15 14 VCC 13 VCC 13 (Top View) Rev 0.1 / Apr’01 GM71C(S)17403C/CL Pin Description Pin A0-A10 A0-A10 I/O1-I/O4 RAS CAS Function Address Inputs Refresh Address Inputs Data-input/Data-output Row Address Strobe Column Address Strobe Pin WE OE VCC VSS NC Function Read/Write Enable Output Enable Power (+5V) Ground No Connection Ordering Information Type No. GM71C(S)17403CJ/CLJ-5 GM71C(S)17403CJ/CLJ-6 GM71C(S)17403CJ/CLJ-7 GM71C(S)17403CT/CLT-5 GM71C(S)17403CT/CLT-6 GM71C(S)17403CT/CLT-7 Access Time 50ns 60ns 70ns 50ns 60ns 70ns Package 300 Mil 24(26) Pin Plastic SOJ 300 Mil 24(26) Pin Plastic TSOP II Absolute Maximum Ratings* Symbol TA TSTG VIN/VOUT VCC IOUT PD Parameter Ambient Temperature under Bias Storage Temperature (Plastic) Voltage on any Pin Relative to VSS Voltage on VCC Relative to VSS Short Circuit Output Current Power Dissipation Rating 0 ~ 70 -55 ~ 125 -1.0 ~ 7.0 -1.0 ~ 7.0 50 1.0 Unit C C V V mA W Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability. Recommended DC Operating Conditions (TA = 0 ~ 70C) Symbol VCC VIH VIL Parameter Supply Voltage Input High Voltage Input Low Voltage Min 4.5 2.4 -1.0 Typ 5.0 - Max 5.5 6.5 0.8 Unit V V V Rev 0.1 / Apr’01 GM71C(S)17403C/CL DC Electrical Characteristics (VCC = 5.0V+/-10%, VSS = 0V, TOPR = 0 ~ 70C) Symbol VOH VOL ICC1 Parameter Output Level Output "H" Level Voltage (IOUT = -2mA) Output Level Output "L" Level Voltage (IOUT = 2mA) Operating Current Average Power Supply Operating Current (RAS, CAS Cycling : tRC = tRC min) Standby Current (TTL) Power Supply Standby Current (RAS, CAS = VIH, DOUT = High-Z) RAS Only Refresh Current Average Power Supply Current RAS Only Refresh Mode (tRC = tRC min) EDO Page Mode Current Average Power Supply Current EDO Page Mode (tHPC = tHPC min) Standby Current (CMOS) Power Supply Standby Current (RAS, CAS >= VCC - 0.2V, DOUT = High-Z) CAS-before-RAS Refresh Current (tRC = tRC min) 50ns 60ns 70ns 50ns 60ns 70ns 50ns 60ns 70ns 50ns 60ns 70ns Min 2.0 0 - Max VCC 0.4 120 110 100 2 100 90 80 90 80 70 1 150 100 90 80 350 Unit V V Note mA 1, 2 ICC2 mA ICC3 mA 2 ICC4 mA 1, 3 ICC5 mA uA mA 5 ICC6 ICC7 Battery Backup Operating Current(Standby with CBR Refresh) (CBR refresh, tRC = 62.5us, tRAS