GM76C256CLLFW

GM76C256C Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No 00 History Revision History Insert Revised - Datasheet format change - PDIP package type insert - Pin configuration change Revised - tWP Value Change @55ns : 45ns -> 40ns Marking Information Add Revised - AC Test Condition Add : 5pF Test Load - tCLZ Value Change : 5ns - > 10ns Changed Logo - HYUNDAI -> hynix Draft Date Jul.07.2000 Remark Final 01 02 Nov.28.2000 Dec.04.2000 Final Final 03 Apr.30.2001 Final This document is a general product description and is subject to change without notice. Hynix responsibility for use of circuits described. No patent licenses are implied. Rev 03 / Apr. 2001 Electronics does not assume any Hynix Semiconductor GM76C256C Series DESCRIPTION The GM76C256C is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. FEATURES • • • • Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min.) data retention • Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard) Standby Current(uA) L LL 40 20 60 30 Temperature (°C) 0~70(Normal) -25~85(Extended) Product Voltage Speed No. (V) (ns) GM76C256C 5.0 55/70/85 GM76C256CE 5.0 55/70/85 Note 1. Current value is max. Operation Current(mA) 10 10 PIN CONNECTION A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 /OE A11 A9 A8 A13 /WE Vcc A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2 PDIP SOP TSOP-I(Standard) PIN DESCRIPTION Pin Name /CS /WE /OE A0 ~ A14 I/O1 ~ I/O8 Vcc Vss Pin Function Chip Select Write Enable Output Enable Address Inputs Data Input/Output Power(+5.0V) Ground A0 BLOCK DIAGRAM SENSE AMP ROW DECODER ADD INPUT BUFFER I/O1 OUTPUT BUFFER I/O8 COLUMN DECODER A14 /CS /OE /WE Rev 03 / Apr. 2000 CONTROL LOGIC WRITE DRIVER MEMORY ARRAY 512x512 2 GM76C256C Series ORDERING INFORMATION Part No. GM76C256CL GM76C256CLL GM76C256CLE GM76C256CLLE GM76C256CLFW GM76C256CLLFW GM76C256CLEFW GM76C256CLLEFW GM76C256CLT GM76C256CLLT GM76C256CLET GM76C256CLLET Speed 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 Power L-part LL-part L-part LL-part L-part LL-part L-part LL-part L-part LL-part L-part LL-part Temp 0 to 70°C 0 to 70°C -25 to 85°C -25 to 85°C 0 to 70°C 0 to 70°C -25 to 85°C -25 to 85°C 0 to 70°C 0 to 70°C -25 to 85°C -25 to 85°C Package PDIP PDIP PDIP PDIP SOP SOP SOP SOP TSOP-I Standard TSOP-I Standard TSOP-I Standard TSOP-I Standard ABSOLUTE MAXIMUM RATING (1) Symbol Vcc, VIN, VOUT TA Parameter Power Supply, Input/Output Voltage Operating Temperature GM76C256C GM76C256CE Storage Temperature Power Dissipation Data Output Current Lead Soldering Temperature & Time Rating -0.3 to 7.0 0 to 70 -25 to 85 -65 to 150 1.0 50 260 •10 Unit V °C °C °C W mA °C•sec TSTG PD IOUT TSOLDER Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability. RECOMMENDED DC OPERATING CONDITIONS Symbol Parameter Min. Vcc Power Supply Voltage 4.5 Vss Ground 0 VIH Input High Voltage 2.2 VIL Input Low Voltage -0.3(1) Note 1. VIL = -3.0V for pulse width less than 50ns Typ. 5.0 0 Max. 5.5 0 Vcc+0.3 0.8 Unit V V V V TRUTH TABLE /CS /WE /OE Mode H X X Standby L H H Output Disabled L H L Read L L X Write Note 1. H=VIH, L=VIL, X=Don't Care I/O Operation High-Z High-Z Data Out Data In Rev 03 / Apr. 2000 2 GM76C256C Series DC CHARACTERISTICS Vcc = 5V ±10%, TA = 0°C to 70°C (Normal)/-25°C to 85°C (Extended), unless otherwise specified. Parameter Test Condition Min. Typ. Max. Symbol ILI Input Leakage Current Vss < VIN < Vcc -1 1 ILO Output Leakage Current Vss < VOUT < Vcc, /CS = VIH or -1 1 /OE = VIH or /WE = VIL Icc Operating Power Supply /CS = VIL, VIN = VIH or VIL, 10 Current VIN = VIH or VIL, II/O = 0mA ICC1 Average Operating Current /CS = VIL, VIN = VIH or VIL, 70 Min. Duty Cycle = 100%, II/O = 0mA ISB TTL Standby Current /CS= VIH 1 (TTL Inputs) VIN = VIH or VIL ISB1 CMOS Standby Current /CS > Vcc - 0.2V, L 40 (CMOS Inputs) VIN > Vcc - 0.2V or LL 20 VIN < Vss + 0.2V LE 60 LLE 30 VOL Output Low Voltage IOL = 2.1mA 0.4 VOH Output High Voltage IOH = -1.0mA 2.4 Note : Typical values are at Vcc =5.0V, TA = 25°C Unit uA uA mA mA mA uA uA uA uA V V AC CHARACTERISTICS(I) Vcc = 5V ±10%, TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) unless otherwise specified. -55 -70 -85 # Symbol Parameter Min. Max. Min. Max. Min Max. READ CYCLE 1 tRC Read Cycle Time 55 70 85 2 tAA Address Access Time 55 70 85 3 tACS Chip Select Access Time 55 70 85 4 tOE Output Enable to Output Valid 30 35 45 5 tCLZ Chip Select to Output in Low Z 10 10 10 6 tOLZ Output Enable to Output in Low Z 5 5 5 7 tCHZ Chip Disable to Output in High Z 0 20 0 30 0 30 8 tOHZ Out Disable to Output in High Z 0 20 0 30 0 30 9 tOH Output Hold from Address Change 5 5 5 WRITE CYCLE 10 tWC Write Cycle Time 55 70 85 11 tCW Chip Selection to End of Write 50 65 75 12 tAW Address Valid to End of Write 50 65 75 13 tAS Address Set-up Time 0 0 0 14 tWP Write Pulse Width 40 50 60 15 tWR Write Recovery Time 0 0 0 16 tWHZ Write to Output in High Z 0 20 0 25 0 30 17 tDW Data to Write Time Overlap 25 30 40 18 tDH Data Hold from Write Time 0 0 0 19 tOW Output Active from End of Write 5 5 5 - Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Rev 03 / Apr. 2000 3 GM76C256C Series AC TEST CONDITIONS TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) unless otherwise specified. Parameter Value Input Pulse Level 0.8V to 2.4V Input Rise and Fall Time 5ns Input and Output Timing Reference Level 1.5V Output Load tCLZ,tOLZ,tCHZ,tOHZ,tWHZ,tOW CL = 5pF + 1TTL Load Others CL = 100pF + 1TTL Load AC TEST LOADS TTL CL(1) Note : Including jig and scope capacitance CAPACITANCE TA = 25°C, f = 1.0MHz Symbol Parameter CIN Input Capacitance CI/O Input /Output Capacitance Condition VIN = 0V VI/O = 0V Max. 6 8 Unit pF pF Note : These parameters are sampled and not 100% tested Rev 03 / Apr. 2000 4 GM76C256C Series TIMING DIAGRAM READ CYCLE 1 tRC ADDR tAA OE tOE tOLZ CS tACS tCLZ Data Out High-Z Data Valid tOHZ tCHZ tOH Note(READ CYCLE): 1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and arenot referenced to output voltage levels. 2. At any given temperature and voltage condition, tCHZ max. is less than tCLZ min. both for a given device and from device to device. 3. /WE is high for the read cycle. READ CYCLE 2 tRC ADDR tAA tOH Data Out Previous Data Data Valid tOH Note(READ CYCLE): 1. /WE is high for the read cycle. 2. Device is continuously selected /CS= VIL. 3. /OE =VIL. Rev 03 / Apr. 2000 5 GM76C256C Series WRITE CYCLE 1(/OE Clocked) tWC ADDR OE tAW tCW CS tAS WE tDW Data In tOHZ Data Out tWP tWR tDH Data Valid WRITE CYCLE 2 (/OE Low Fixed) tWC ADDR tAW tCW CS tAS WE tDW Data In tWHZ Data Out tDH Data Valid tOW (7) (8) tWP tWR Rev 03 / Apr. 2000 6 GM76C256C Series Notes(WRITE CYCLE): 1. A write occurs during the overlap of a low /CS and a low /WE. A write begins at the latest transition among /CS going low and /WE going low: A write ends at the earliest transition among /CS going high and /WE going high. tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the later of /CS going low to the end of write . 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR is applied in case a write ends as /CS, or /WE going high. 5. If /OE and /WE are in the read mode during this period, and the I/O pins are in the output low-Z state, input of opposite phase of the output must not be applied because bus contention can occur. 6. If /CS goes low simultaneously with /WE going low, or after /WE going low, the outputs remain in high impedance state. 7. DOUT is the same phase of the latest written data in this write cycle. 8. DOUT is the read data of the new address. DATA RETENTION CHARACTERISTIC TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) unless otherwise specified. Symbol Parameter Test Condition Min VDR Vcc for Data Retention CS>Vcc-0.2V, 2.0 VIN > Vcc - 0.2V or VIN < Vss + 0.2V ICCDR Data Retention Current Vcc=3.0V, L /CS>Vcc - 0.2V, LL VIN > Vcc - 0.2V or LE VIN < Vss + 0.2V LLE tCDR Chip Deselect to Data See Data Retention 0 Retention Time tR Operating Recovery Time Timing Diagram tRC(2) Notes 1. Typical values are under the condition of TA = 25 °C. 2. tRC is read cycle time. Typ 1 0.5 1 0.5 Max 15 7 20 10 Unit V uA uA uA uA ns ns DATA RETENTION TIMING DIAGRAM VCC 4.5V tCDR DATA RETENTION MODE tR 2.2V VDR CS>VCC-0.2V CS VSS Rev 03 / Apr. 2000 7 GM76C256C Series PACKAGE INFORMATION 28pin 600mil Dual In-Line Package(Blank) • UNIT : INCH(mm) MAX. MIN. 1.467(37.262) 1.447(36.754) 0.600(15.240)BSC 0.090(2.286) 0.070(1.778) 0.065(1.650) 0.050(1.270) 0.155(3.937) 0.145(3.683) 0.035(0.889) 0.020(0.508) 0.550(13.970) 0.530(13.462) 0.140(3.556) 0.021(0.533) 0.100(2.54)BSC 0.015(0.381) 0.120(3.048) 3 deg 11 deg 0.014(0.356) 0.008(0.200) 28pin 330mil Small O utline Package(FW) 0.346(8.788) 0.338(8.585) 0.480(12.192) 0.460(11.684) UNIT : INCH(mm) MAX . MIN. 0.728(18.491) 0.720(18.288) 0.110(2.794) 0.094(2.388) 0.014(0.356) 0.002(0.051) 0.012(0.305) 0.008(0.203) 0.050(1.270) 0.030(0.762) 0.050(1.270)BSC 0.020(0.508) 0.014(0.356) Rev 03 / Apr. 2000 8 GM76C256C Series 28pin 8x13.4mm Thin Small Outline Package Standard(T) UNIT : INCH(mm) MAX. MIN. 0.468(11.9) 0.460(11.7) 0.536(13.6) 0.520(13.2) 0.319(8.1) 0.311(7.9) 0.040(1.02) 0.036(0.91) 0.008(0.20) 0.002(0.05) 0.027(0.7) 0.012(0.3) 0.008(0.2) 0.004(0.1) 0.022(0.55 BSC) Rev 03 / Apr. 2000 9 GM76C256C Series MARKING INFORMATION Package H Y M y U 7 w N 6 w Marking Example D C A 2 I 5 6 C c c K O s R s E t A PDIP G y H Y M y U 7 w N 6 w D C A 2 K I 5 O 6 R C E c A c FW s s t SOP G y H Y M y U 7 w N 6 w D C A 2 K I 5 O 6 R C E c A c T s s t TSOP-I G y Index • HYUNDAI • KOREA • GM76C256C • cc : Hynix Logo : Origin Country : Part Name : Power Consumption -L : Low Power - LL : Low Low Power : Package Type - Blank : DIP - FW : SOP -T : TSOP-I : Speed - 55 : 55ns - 70 : 70ns : Temperature - Blank : Commercial ( 0 ~ 70 °C ) -E : Extended ( -25 ~ 85 °C ) : Year ( ex : 00 = year 2000, 01 = year 2001 ) : Work Week ( ex : 12 = ww12 ) • Blank / FW / T • ss •t • yy • ww Note - Capital Letter - Small Letter : Fixed Item : Non-fixed Item Rev 03 / Apr. 2000 10