H57V1262GTR-70X

128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 Initial Draft Release History Draft Date Jul. 2009 Aug. 2009 Remark Preliminary This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Aug. 2009 1 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GTR Series H57V1262GTRDESCRIPTION The Hynix H57V1262GTR series is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. H57V1262GTR series is organized as 4banks of 2,097,152 x 16. H57V1262GTR is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL. Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined design is not restricted by a '2N' rule) FEATURES • • • • Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM • • • • Internal four banks operation Auto refresh and self refresh 4096 Refresh cycles / 64ms - Commercial Temperature (0oC to 70oC) - Industrial Temperature (-40oC to 85oC) Operating Temperature • • • • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst Programmable CAS Latency; 2, 3 Clocks Burst Read Single Write operation ● This product is in compliance with the directive pertaining of RoHS. ORDERING INFORMATION Part No. H57V1262GTR-50X H57V1262GTR-60X H57V1262GTR-70X H57V1262GTR-75X Note: 1. H57V1262GTR-XXC Series: Normal power, Commercial Temp.(0oC to 70oC) 2. H57V1262GTR-XXI Series: Normal power, Industrial Temp. (-40oC to 85oC) 3. H57V1262GTR-XXL Series: Low power, Commercial Temp.(0oC to 70oC) 4. H57V1262GTR-XXJ Series: Low power, Industrial Temp. (-40oC to 85oC) Clock Frequency 200MHz 166MHz 143MHz 133MHz Organization Interface Package 4Banks x 2Mbits x16 LVTTL 54 Pin TSOPII Rev. 1.0 / Aug. 2009 2 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GTR Series PIN ASSIGNMENTS VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 VDD LDQM /WE /CAS /RAS /CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 VSS NC UDQM CLK CKE NC A11 A9 A8 A7 A6 A5 A4 VSS 54 Pin TSOPII 400mil x 875mil 0.8mm pin pitch Rev. 1.0 / Aug. 2009 3 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GTR Series PIN DESCRIPTION SYMBOL CLK TYPE Clock DESCRIPTION The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh Enables or disables all inputs except CLK, CKE, UDQM and LDQM Selects bank to be activated during RAS activity Selects bank to be read/written during CAS activity Row Address: RA0 ~ RA11, Column Address: CA0 ~ CA8 Auto-precharge flag: A10 RAS, CAS and WE define the operation Refer function truth table for details Controls output buffers in read mode and masks input data in write mode Multiplexed data input / output pin Power supply for internal circuits and input buffers CKE CS BA0, BA1 Clock Enable Chip Select Bank Address A0 ~ A11 Address Row Address Strobe, Column Address Strobe, Write Enable Data Input/Output Mask Data Input/Output Power Supply/Ground RAS, CAS, WE UDQM, LDQM DQ0 ~ DQ15 VDD/VSS VDDQ/VSSQ NC Data Output Power/Ground Power supply for output buffers No Connection No connection Rev. 1.0 / Aug. 2009 4 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GTR Series FUNCTIONAL BLOCK DIAGRAM 2Mbit x 4banks x 16 I/O Synchronous DRAM Self refresh logic & timer CLK CKE State Machine CS RAS CAS WE U/LDQM Row Active Internal Row Counter 2Mx16 BANK 3 Row Pre Decoder 2Mx16 BANK 2 2Mx16 BANK 1 2Mx16 BANK 0 DQ0 I/O Buffer & Logic Sense AMP & I/O Gate X-Decoder X-Decoder X-Decoder X-Decoder Refresh Column Active Memory Cell Array Column Pre Decoder Y-Decoder DQ15 Bank Select Column Add Counter A0 A1 Address Buffers Address Register Burst Counter Pipe Line Control A11 BA1 BA0 Mode Register CAS Latency Data Out Control Rev. 1.0 / Aug. 2009 5 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GTR Series BASIC FUNCTIONAL DESCRIPTION Mode Register BA1 0 BA0 0 A11 0 A10 0 A9 OP Code A8 0 A7 0 A6 A5 CAS Latency A4 A3 BT A2 A1 Burst Length A0 OP Code A9 0 1 Write Mode Burst Read and Burst Write Burst Read and Single Write Burst Type A3 0 1 Burst Type Sequential Interleave CAS Latency A6 0 0 0 0 1 1 1 1 A5 0 0 1 1 0 0 1 1 A4 0 1 0 1 0 1 0 1 CAS Latency Reserved Reserved 2 3 Reserved Reserved Reserved Reserved Burst Length A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 A0 0 1 0 1 0 1 0 1 Burst Length A3 = 0 1 2 4 8 Reserved Reserved Reserved Full Page A3=1 1 2 4 8 Reserved Reserved Reserved Reserved Rev. 1.0 / Aug. 2009 6 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GTR Series ABSOLUTE MAXIMUM RATING Parameter Ambient Temperature Storage Temperature Voltage on Any Pin relative to VSS Voltage on VDD relative to VSS Short Circuit Output Current Power Dissipation Soldering Temperature / Time Commercial Temperature Industrial Temperature Symbol TA TSTG VIN, VOUT VDD, VDDQ IOS PD TSOLDER Rating 0 ~ 70 -40 ~ 85 -55 ~ 125 -1.0 ~ 4.6 -1.0 ~ 4.6 50 1 260 / 10 oC o Unit o C C V V mA W / Sec DC OPERATING CONDITION (Commercial: TA = 0oC to 70oC, Industrial: TA = -40oC to 85oC) Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol VDD, VDDQ VIH VIL Min. 3.0 2.0 -0.3 Typ 3.3 3.0 Max 3.6 VDDQ + 0.3 0.8 Unit V V V Note 1 1, 2 1, 3 Note: 1. All voltages are referenced to VSS = 0V 2. VIH(max) is acceptable 5.6V AC pulse width with 1ns, then (tR/2-0.5)ns should be added to the parameter. Rev. 1.0 / Aug. 2009 10 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GTR Series AC CHARACTERISTICS II (AC operating conditions unless otherwise noted) Parameter RAS Cycle Time RAS Cycle Time RAS to CAS Delay RAS Active Time RAS Precharge Time RAS to RAS Bank Active Delay CAS to CAS Delay Write Command to Data-In Delay Data-in to Precharge Command Data-In to Active Command DQM to Data-Out Hi-Z DQM to Data-In Mask MRS to New Command Precharge to Data Output High-Z Power Down Exit Time Self Refresh Exit Time Refresh Time CL = 3 CL = 2 Operation Auto Refresh Speed (MHz) tRC tRRC tRCD tRAS tRP tRRD tCCD tWTL tDPL tDAL tDQZ tDQM tMRD tPROZ3 tPROZ2 tDPE tSRE tREF 2 0 2 3 1 1 64 2 0 2 3 1 1 64 200 Min 55 55 15 Max 166 Min 60 60 18 42 18 12 1 0 2 Max 100K 143 Min 63 63 20 42 20 14 1 0 2 tDPL + tRP 2 0 2 3 1 1 64 2 0 2 3 2 1 1 64 CLK CLK CLK CLK CLK CLK CLK ms 1 133 Unit Note ns ns ns ns ns ns CLK CLK CLK Max Min Max 100K 63 63 20 42 20 15 1 0 2 120 K - 38.7 100K 15 10 1 0 2 - Note: 1. A new command can be given tRRC after self refresh exit. Rev. 1.0 / Aug. 2009 11 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GTR Series COMMAND TRUTH TABLE Command Mode Register Set No Operation Bank Active Read Read with charge Write Write with charge AutopreH X L H L L X CA AutopreH X L H L H X CA CKEn-1 H H H CKEn X X X CS L H L L RAS L X H L CAS L X H H WE L X H H DQM X X X RA L H L H H L X X X A9 ball High (Other balls OP code) MRS Mode V V ADDR A10/AP OP code X V BA Note Precharge All Banks Precharge selected Bank Burst Stop DQM Auto Refresh Burst-Read-SingleWRITE Entry Self Refresh Exit H H H H H H L X X L L L H X H H L L X X V X X V H X L H L L L H L H L H L H L L L L X H X H X H X V X L L L X H X H X H X V H L H X H X H X H X V X X X X X Entry Precharge power down Exit H L X X X L H Clock Suspend Entry Exit H L L H X X X Rev. 1.0 / Aug. 2009 12 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GTR Series PACKAGE INFORMATION 400mil 54pin Thin Small Outline Package UNIT : mm(inch) 11.938(0.4700) 11.735(0.4620) 22.327(0.8790) 22.149(0.8720) 0.150(0.0059) 0.050(0.0020) 10.262(0.4040) 10.058(0.3960) 1.194(0.0470) 0.991(0.0390) 0.80(0.0315)BSC 0.400(0.016) 0.300(0.012) 5deg 0deg 0.597(0.0235) 0.406(0.0160) 0.210(0.0083) 0.120(0.0047) Rev. 1.0 / Aug. 2009 13