HMP112V7EFR8C-S6

240pin DDR2 VLP Registerd DIMMs based on 1Gb E version This Hynix DDR2 VLP (Very Low Profile) registered Dual In-Line Memory Module (DIMM) series consists of 1Gb E version DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb E version based VLP Registered DIMM series provide a high performance 8 byte interface in 133.35mm width form factor of industry standard. It is suitable for easy interchange and addition. ORDERING INFORMATION Part Name HMP112V7EFR8C-C4/Y5/S6 HMP125V7EFR4C-C4/Y5/S6 HMP351V7EMR4C-C4/Y5/S6 Density 1GB 2GB 4GB Org. 128Mbx72 256Mbx72 512Mbx72 # of DRAMs 9 18 36 # of Ranks 1 1 2 Materials Halogen Free Halogen Free Halogen Free Parity Support O O O SPEED GRADE & KEY PARAMETERS C4 (DDR2-533) Speed@CL3 Speed@CL4 Speed@CL5 Speed@CL6 CL-tRCD-tRP 400 533 4-4-4 Y5 (DDR2-667) 400 533 667 5-5-5 S6 (DDR2-800) 400 533 800 6-6-6 Unit Mbps Mbps Mbps Mbps tCK This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.3 / Sep. 2008 1 1240pin DDR2 VLP Registered DIMMs FEATURES • • • • • • • • • • • • • • • • • • JEDEC standard 1.8V +/- 0.1V Power Supply VDDQ: 1.8V +/- 0.1V All inputs and outputs are compatible with SSTL_1.8 interface 4 Bank architecture Posted CAS Programmable CAS Latency 3, 4, 5 OCD (Off-Chip Driver Impedance Adjustment) ODT (On-Die Termination) Fully differential clock operations (CK & CK) Programmable Burst Length 4 / 8 with both sequential and interleave mode Average Auto Refresh Period 7.8us under TCASE 85℃, 3.9us at 85℃ < TCASE ≤ 95 ℃ High Temperature Self-Refresh Entry enable features PASR (Partial Array Self- Refresh) 8192 refresh cycles / 64ms Serial presence detect with EEPROM DDR2 SDRAM Package: 60ball FBGA 133.35 x 18.29 mm form factor Lead-free Products are RoHS compliant ADDRESS TABLE Density 1GB 2GB 4GB Organization Ranks 128Mb x 72 256Mb x 72 512Mb x 72 1 1 2 SDRAMs 128Mb x 8 256Mb x 4 256Mb x 4 # of DRAMs 9 18 36 # of row/bank/column Address 14(A0~A13)/3(BA0~BA2)/10(A0~A9) Refresh Method 8K / 64ms 14(A0~A13)/3(BA0~BA2)/11(A0~A9,A11) 8K / 64ms 14(A0~A13)/3(BA0~BA2)/11(A0~A9,A11) 8K / 64m Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs Input/Output Functional Description Symbol CK0 CK0 CKE[1:0] S[1:0] ODT[1:0] RAS, CAS, WE Vref VDDQ BA[1:0] Type IN IN IN IN IN IN Supply Supply IN Polarity Positive Edge Pin Description Positive line of the differential pair of system clock inputs that drives input to the on-DIMM PLL. Negative Negative line of the differential pair of system clock inputs that drives input to the on-DIMM PLL. Edge Active High Active Low Active High Active Low Activates the DDR2 SDRAM CK signal when high and deactivates the CK signal when low. By deactivating the clocks, CKE low initiates the Power Down mode or the Self Refresh mode. Enables the associated DDR2 SDRAM command decoder when low and disables the command decoder when high. When the command decoder is disabled, new commands are ignored but previous operations continue. Rank 0 is selected by S0; Rank 1 is selected by S1 On-Die Termination signals. When sampled at the positive rising edge of the clock. RAS,CAS and WE(ALONG WITH S) define the command being entered. Reference voltage for SSTL18 inputs Power supplies for the DDR2 SDRAM output buffers to provide improved noise immunity. For all current DDR2 unbuffered DIMM designs, VDDQ shares the same power plane as VDD pins. Selects which DDR2 SDRAM internal bank of four is activated. During a Bank Activate command cycle, Address input defines the row address(RA0~RA13) During a Read or Write command cycle, Address input defines the column address when sampled at the cross point of the rising edge of CK and falling edge of CK. In addition to the column address, AP is used to invoke autoprecharge operation at the end of the burst read or write cycle. If AP is high., autoprecharge is selected and BA0-BAn defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command cycle., AP is used in conjunction with BA0-BAn to control which bank(s) to precharge. If AP is high, all banks will be precharged regardless of the state of BA0-BAn inputs. If AP is low, then BA0-BAn are used to define which bank to precharge. Data and Check Bit Input/Output pins. DM is an input mask signal for write data. Input data is masked when DM is sampled High coincident with that input data during a write access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. Power and ground for the DDR2 SDRAM input buffers, and core logic. VDD and VDDQ pins are tied to VDD/VDDQ planes on these modules. Positive Edge Positive line of the differential data strobe for input and output data A[9:0], A10/AP A[13:11] IN - DQ[63:0], CB[7:0] DM[8:0] VDD,VSS DQS[17:0] DQS[17:0] SA[2:0] SDA SCL VDDSPD RESET Par_In Err_Out TEST IN IN Supply I/O I/O IN I/O IN Supply IN IN OUT Active High Negative Negative line of the differential data strobe for input and output data Edge These signals are tied at the system planar to either VSS or VDDSPD to configure the serial SPD EEPROM address range. This is a bidirectional pin used to transfer data into or out of the SPD EEPROM. A resister may be connected from the SDA bus line to VDDSPD on the system planar to act as a pull up. This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected from SCL to VDDSPD to act as a pull up on the system board. Power supply for SPD EEPROM. This supply is separate from the VDD/VDDQ power plane. EEPROM supply is operable from 1.7V to 3.6V. The RESET pin is connected to the RST pin on the register and to the OE pin on the PLL. When low, all register outputs will be driven low and the PLL clocks to the DRAMs and register(s) will be set to low level (the PLL will remain synchronized with the input clock) Parity bit for the Address and Control bus(“1”. Odd, “0”.Even) Parity error found in the Address and Control bus Used by memory bus analysis tools (unused on memory DIMMs) Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs PIN DESCRIPTION Pin CK0 CK0 Pin Description Clock Input, positive line Clock input, negative line Pin ODT[1:0] VDDQ Pin Description On Die Termination Inputs DQs Power Supply CKE0~CKE1 Clock Enable Input RAS CAS WE S0,S1 A0~A9, A11~A13 A10/AP BA0,BA1 SCL SDA SA0~SA2 Par_In Err_Out RESET CB0~CB7 Row Address Strobe Column Address Strobe Write Enable Chip Select Input Address input Address input/Autoprecharge SDRAM Bank Address Serial Presence Detect (SPD) Clock Input SPD Data Input/Output E PROM Address Inputs Parity bit for the Address and Control bus Parity error found on the Address Reset Enable Data Check bit Inputs/Outputs 2 DQ0~DQ63 Data Input/Output CB0~CB7 DQS(0~8) DQS(0~8) Data check bits Input/Output Data strobes Data strobes, negative line DM(0~8), Data Maskes/Data strobes DQS(9~17) DQS(9~17) Data strobes, negative line RFU NC TEST VDD VDDQ VSS VREF VDDSPD Reserved for Future Use No Connect Memory bus test tool (Not Connected and Not Usable on DIMMs) Core Power I/O Power Ground Input/Output Reference SPD Power PIN LOCATION Front Side 1 pin 64 pin 65 pin 120 pin 121 pin Back Side 184 pin 185 pin 240 pin Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs PIN ASSIGNMENT Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Name VREF VSS DQ0 DQ1 VSS DQS0 DQS0 VSS DQ2 DQ3 VSS DQ8 DQ9 VSS DQS1 DQS1 VSS RESET NC VSS DQ10 DQ11 VSS DQ16 DQ17 VSS DQS2 DQS2 VSS DQ18 DQ19 VSS DQ24 DQ25 VSS DQS3 DQS3 VSS DQ26 DQ27 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 Pin 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 Key VSS VSS VDD NC, Err_Out VDD A10/AP BA0 VDDQ WE CAS VDDQ NC, S1 NC, ODT1 VDDQ VSS DQ32 Name VSS CB0 CB1 VSS DQS8 DQS8 VSS CB2 CB3 VSS VDDQ CKE0 VDD BA2,NC NC, Err_Out VDDQ A11 A7 VDD A5 A4 VDDQ A2 VDD Pin 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 Name DQ33 VSS DQS4 DQS4 VSS DQ34 DQ35 VSS DQ40 DQ41 VSS DQS5 DQS5 VSS DQ42 DQ43 VSS DQ48 DQ49 VSS SA2 NC(TEST) VSS DQS6 DQS6 VSS DQ50 DQ51 VSS DQ56 DQ57 VSS DQS7 DQS7 VSS DQ58 DQ59 VSS SDA SCL Pin 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 Name VSS DQ4 DQ5 VSS DM0/DQS9 DQS9 VSS DQ6 DQ7 VSS DQ12 DQ13 VSS DM1/DQS10 DQS10 VSS RFU RFU VSS DQ14 DQ15 VSS DQ20 DQ21 VSS DM2/DQS11 DQS11 VSS DQ22 DQ23 VSS DQ28 DQ29 VSS DM3/DQS12 DQS12 VSS DQ30 DQ31 VSS 185 186 187 188 189 190 191 192 193 194 195 196 197 198 199 200 NC= No Connect, RFU= Reserved for Future Use. Pin 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 Key CK0 CK0 VDD A0 VDD BA1 VDDQ RAS S0 VDDQ ODT0 A13,NC VDD VSS DQ36 DQ37 Name CB4 CB5 VSS DM8,DQS17 DQS17 VSS CB6 CB7 VSS VDDQ NC,CKE1 VDD A15,NC A14,NC VDDQ A12 A9 VDD A8 A6 VDDQ A3 A1 VDD Pin 201 202 203 204 205 206 207 208 209 210 211 212 213 214 215 216 217 218 219 220 221 222 223 224 225 226 227 228 229 230 231 232 233 234 235 236 237 238 239 240 Name VSS DM4/DQS13 DQS13 VSS DQ38 DQ39 VSS DQ44 DQ45 VSS DM5/DQS14 DQS14 VSS DQ46 DQ47 VSS DQ52 DQ53 VSS RFU RFU VSS DM6/DQS15 NC,DQS15 VSS DQ54 DQ55 VSS DQ60 DQ61 VSS DM7/DQS16 NC,DQS16 VSS DQ62 DQ63 VSS VDDSPD SA0 SA1 Note: 1. RESET (Pin 18) is connected to both OE of PLL and Reset of register. 2. NC/Err_out (Pin 55) and NC/Par_In(Pin68) are for optional function to check address and command parity. 3. The Test pin (Pin 102) is reserved for bus analysis probes and is not connected on normal memory modules (DIMMs) Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs FUNCTIONAL BLOCK DIAGRAM 1GB(128Mbx72): HMP112V7EFR8C RS0 DQS4 DQS4 DM4,DQS13 DQS13 DM/ NU/ /CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS /DQS DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS5 DQS5 DM5,DQS14 DQS14 DM/ NU/ /CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS /DQS DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQS6 DQS6 DM6,DQS15 DQS15 DM/ NU/ /CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS /DQS DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQS7 /DQS7 DM7,DQS16 DQS16 DM/ NU/ /CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS /DQS DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 DM/ NU/ /CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS /DQS DM/ NU/ /CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS /DQS DM/ NU/ /CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS /DQS DM/ NU/ /CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS /DQS DQS0 DQS0 DM0,DQS9 DQS9 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 D0 D4 DQS1 DQS1 DM1,DQS10 DQS10 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DQS2 DM2,DQS11 DQS11 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DQS3 DM3,DQS12 DQS12 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQS8 DQS8 DM8,DQS17 DQS17 CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 S0* BA0- BA2** A0- A15** RAS CAS WE CKE0 ODT0 /RESET PCK7 DM/ NU/ /CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS /DQS D1 D5 VDD SPD VDD/VDDQ VREF VSS Serial PD D0-D8 D0–D8 D0–D8 D2 D6 Serial PD SCL WP A0 A1 A2 SA0 SA1 SA2 SDA D3 D7 Note: 1.DQ-to-I/O wiring may be changed within a byte. 2.Unless otherwise noted, resistor values are 22 Ohms +/-5%. Signals for Address and Command Parity Function (Raw Card F, F and AC) Vss Vss PAR_IN 100K ohms C0 C1 PAR_IN Register PRO QERR D8 Err_Out 1:1 R E G I S T E R RST /RS0 to /CS-> /CS: SDRAMs D0-D8 RBA0 to RBA2->BA0-BA2: SDRAMs D0-D8*** /RA0-RA15->A0-A15: SDRAMs D0- D8*** /RRAS-> /RAS: SDRAMs D0-D8 /RCAS ->/CAS: SDRAMs D0-D8 /RWE ->/WE: SDRAMs D0-D8 RCKE0-> CKE0: SDRAMs D0-D8 RODT0-> ODT0: SDRAMs D0-D8 RESET CK0 CK0 The resistors on Par_In, A13, A14, A15, BA2 and the signal line of Err_Out refer to the section: “Register Options for unused Address inputs” P L L OE PCK0-PCK6, PCK8, PKC9 → CK: SDRAMs D0-D8 PCK0-PCK6, PCK8, PCK9 → CK: SDRAMs D0-D8 PCK7 → CK: Register PCK7 → CK: Register /PCK7 * S0 connects to DCS and VDD connects to CSR on the register. S1, CKE1 and ODT1 are NC ** A13-15, BA2 have the optional pull down resistors(100K ohms), which is not indicated here. *** For Raw Card R and A Co, post register A14, A15 and BA2 are not connected to the SDRAMs. And for Raw Card AC1, post register A14 and A15 are not connected to the SDRAMs. Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs FUNCTIONAL BLOCK DIAGRAM 2GB(256Mbx72): HMP125V7EFR4C VSS RS0 DQS0 DQS0 DQ0 DQ1 DQ2 DQ3 DQS1 DQS1 DQ8 DQ9 DQ10 DQ11 DQS2 DQS2 DQ16 DQ17 DQ18 DQ19 DQS3 DQS3 DQ24 DQ25 DQ26 DQ27 DQS4 DQS4 DQ32 DQ33 DQ34 DQ35 DQS5 DQS5 DQ40 DQ41 DQ42 DQ43 DQS6 DQS6 DQ48 DQ49 DQ50 DQ51 DQS7 DQS7 DQ56 DQ57 DQ58 DQ59 DQS8 DQS8 CB0 CB1 CB2 CB3 I/O I/O I/O I/O DM 0 1 2 3 CS DQS DQS I/O I/O I/O I/O DM 0 1 2 3 CS DQS DQS I/O I/O I/O I/O DM 0 1 2 3 CS DQS DQS I/O I/O I/O I/O DM 0 1 2 3 CS DQS DQS I/O I/O I/O I/O DM 0 1 2 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 /CS DQS /DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DQS9 DQS9 DQ4 DQ5 DQ6 DQ7 DQS10 DQS10 DQ12 DQ13 DQ14 DQ15 DQS11 DQS11 DQ20 DQ21 DQ22 DQ23 DQS12 DQS12 DQ28 DQ29 DQ30 DQ31 DQS13 DQS13 DQ36 DQ37 DQ38 DQ39 DQS14 DQS14 DQ44 DQ45 DQ46 DQ47 DQS15 DQS15 DQ52 DQ53 DQ54 DQ55 DQS16 DQS16 DQ60 DQ61 DQ62 DQ63 DQS17 DQS17 CB4 CB5 CB6 CB7 I/O I/O I/O I/O DM 0 1 2 3 CS DQS DQS I/O I/O I/O I/O DM 0 1 2 3 CS DQS DQS I/O I/O I/O I/O DM 0 1 2 3 CS DQS DQS I/O I/O I/O I/O DM 0 1 2 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 /CS DQS /DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS Serial PD SCL SCL SDA SDA D0 D9 WP A0 A1 A2 SA0 SA1 SA2 VDD SPD VDD/VDDQ VREF VSS CK0 CK0 RESET Serial PD D0–D17 D0–D17 D0–D17 PCK0 - PCK6, PCK8, PKC9 → CK: SDRAMs D0-D17 PCK0 - PCK6, PCK8, PCK9 → CK: SDRAMs D0-D17 PCK7 → CK: Register PCK7 → CK: Register D1 D10 D2 D11 P L L OE D3 D12 Note: 1.DQ-to-I/O wiring may be changed within a byte. 2.Unless otherwise noted, resistor values are 22 Ohms +/-5%. * S0 connects to DCS or Register A and CSR of Register B. CSR of Register A and DCS of Register B connects to VDD. ** RESET, PCK7 and PCK7 connects to both Registers. Other signals connects to one of two Registers. Raw Card V has only one register. *** A13-A15, BA2 have the optional pull down resistors (100K ohms), which is not indicated here. **** For /raw /card U0 and V, post register A14, A15 and BA2 are not connected to the SDRAMs. And for Raw Care U1, post register A14 and A15 are not connected to the SDRAMs. D4 D13 D5 D14 D6 D15 D7 D16 The resistors on Par_In, A13, A14, A15, BA2 and the signal line of Err_Out refer to the section: “Register Options for unused Address inputs” D8 D17 S0* BA0-BA2*** A0-A15*** RAS CAS WE CKE0 ODT0 RESET** PCK7** PCK7** 1:2 R E G I S T E R RST RS0 -> CS: SDRAMs D0-D17 RBA0-RBA2->BA0-BA2: SDRAMs D0-D17**** RA0- RA15->A0-A15: SDRAMs D0-D17**** RRAS-> RAS: SDRAMs D0-D177 RCAS ->CAS: SDRAMs D0-D17 RWE-> WE: SDRAMs D0-D17 ROKE0-> CKE: SDRAMs D0-D17 RODT0-> ODT0: SDRAMs D0-D17 Signals for Address and Command Parity Function (Raw Card H, U) Vss VDD PAR_IN 100K ohms C0 C1 PAR_IN Register A VDD VDD C0 C1 PAR_IN Register B PRO QERR PRO QERR Err_Out For R/C U, 0 ohm resistor is placed at the end of Err_Out just before the edge connector and is not populated for the non-parity card. Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs FUNCTIONAL BLOCK DIAGRAM 4GB(256Mbx72): HMP351V7EMR4C VSS RS0 RS1 DQS0 DQS0 DQ0 DQ1 DQ2 DQ3 DQS1 DQS1 DQ8 DQ9 DQ10 DQ11 DQS2 DQS2 DQ16 DQ17 DQ18 DQ19 DQS3 DQS3 DQ24 DQ25 DQ26 DQ27 DQS8 DQS8 CB0 CB1 CB2 CB3 RS0 RS1 DQS4 DQS4 DQ32 DQ33 DQ34 DQ35 DQS5 DQS5 DQ40 DQ41 DQ42 DQ43 DQS6 DQS6 DQ48 DQ49 DQ50 DQ51 DQS7 DQS7 DQ56 DQ57 DQ58 DQ59 DM CS I/O 0 I/O 1 I/O 2 I/O 3 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM CS I/O 0 I/O 1 I/O 2 I/O 3 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM CS I/O 0 I/O 1 I/O 2 I/O 3 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM CS I/O 0 I/O 1 I/O 2 I/O 3 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM CS I/O 0 I/O 1 I/O 2 I/O 3 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM CS I/O 0 I/O 1 I/O 2 I/O 3 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM CS I/O 0 I/O 1 I/O 2 I/O 3 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM CS I/O 0 I/O 1 I/O 2 I/O 3 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM CS I/O 0 I/O 1 I/O 2 I/O 3 DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DQS9 DQS9 DQ4 DQ5 DQ6 DQ7 DQS10 DQS10 DQ12 DQ13 DQ14 DQ15 DQS11 DQS11 DQ20 DQ21 DQ22 DQ23 DQS12 DQS12 DQ28 DQ29 DQ30 DQ31 DQS17 DQS17 CB4 CB5 CB6 CB7 DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS Serial PD SCL SCL WP A0 A1 SDA A2 SDA D0 D18 D9 D27 SA0 SA1 SA2 D1 D19 D10 D28 VDD SPD VDD/VDDQ Serial PD D0–D35 D0–D35 D0–D35 D2 D20 D11 D29 VREF VSS D3 D21 D12 D30 CK0 CK0 P L L OE PCK0 to PCK6, PCK8, PKC9 → CK: SDRAMs D0-D35 PCK0 to PCK6, PCK8, PCK9 → CK: SDRAMs D0-D35 PCK7 → CK: Register PCK7 → CK: Register RESET D8 D26 D17 D35 DQS13 DQS13 DQ36 DQ37 DQ38 DQ39 DQS14 DQS14 DQ44 DQ45 DQ46 DQ47 DQS15 DQS15 DQ52 DQ53 DQ54 DQ55 DQS16 DQS16 DQ60 DQ61 DQ62 DQ63 DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS D4 D22 D13 D31 D5 D23 D14 D32 D6 D24 D15 D33 D7 D25 D16 D34 The resistors on Par_In, A13, A14, A15, BA2 and signal line of Err_Out refer to the section: “Register Options for Unused Address inputs” S0* S1* BA0-BA2*** A0-A15*** RAS CAS WE CKE0 CKE ODT0 ODT1 RESET** PCK7** PCK7** 1:2 R E G I S T E R RS0 -> CS: SDRAMs D0-D17 Register 1 Register 2 RS1 -> CS: SDRAMs D18-D35 Vss VDD C1 C1 RBA0-RBA2 -> BA0-BA2: SDRAMs D0-D35 VSS VDD C2 C2 RA0-RA15 -> A0-A15: SDRAMs D0-D35**** PRO1 PARIN1 PARIN1 PTYERR1 PAR_IN RRAS -> RAS: SDRAMs D0-D35 PARIN2 PARIN2 PTYERR2 PRO2 100K ohms RCAS -> CAS: SDRAMs D0-D35 Register 1 share a part of Addr/Cmd input signal set. RWE -> WE: SDRAMs D0-D35 Register 2 share the other part of Addr/Cmd input signal set. RCKE0 -> CKE: SDRAMs D0-D17 0 Ohm resistor on Err_Out is not populated for non-parity card. RCKE1 -> CKE: SDRAMs D18-D35 Notes: RODT0 -> ODT0: SDRAMs D0-D17 1. DQ-to-I/O wiring may be changed within a nibble. 2. Unless otherwise noted, resistor values are 22 ohms +/-5%. RODT1 -> ODT1: SDRAMs D18-D35 Signals for Address and Command Parity Function 0 ohm Err_Out RST 3. RS0 and RS1 altemate between the bottom and surface sides of the DIMM. * S0 connects to DCS and S1 connects to CSR on Register1. S1 connects to DCS and S0 connects to CSR on Register 2. ** RESET, PCK7 and PCK7 connect to both Registers. Other signals connect to one of two Registers. *** A13-15, BA2 have the optional pull down resistors(100K ohms), which is not indicated here. **** For Raw Card AJ, post register A14, A15 are not connected to the SDRAMs. Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs ABSOLUTE MAXIMUM RATINGS Parameter Voltage on VDD pin relative to Vss Voltage on VDDL pin relative to Vss Voltage on VDDQ pin relative to Vss Voltage on any pin relative to Vss Storage Temperature Storage Humidity (without condensation) Note: 1. Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional operation at or above the conditions indicated is not implied. Expousure to absolute maximum rating con ditions for extended periods may affect reliablility. Symbol VDD VDDL VDDQ VIN, VOUT TSTG HSTG Value - 1.0 V ~ 2.3 V -0.5V ~ 2.3 V - 0.5 V ~ 2.3 V - 0.5 V ~ 2.3 V -50 ~ +100 5 to 95 Unit V V V V o Note 1 1 1 1 1 1 C % OPERATING CONDITIONS Parameter DIMM Operating temperature (ambient) DIMM Barometric Pressure (operating & storage) DRAM Component Case Temperature Range Note: 1. Up to 9850 ft. 2. If the DRAM case temperature is Above 85oC, the Auto-Refresh command interval has to be reduced to tREFI=3.9us. For Measurement conditions of TCASE, please refer to the JEDEC document JESD51-2. Symbol TOPR PBAR TCASE Rating 0 ~ +55 105 to 69 0 ~+95 Units oC Notes K Pascal o 1 2 C DC OPERATING CONDITIONS (SSTL_1.8) Parameter Symbol VDD Power Supply Voltage Input Reference Voltage EEPROM Supply Voltage Termination Voltage Note: 1. 2. 3. VDDQ must be less than or equal to VDD. Peak to peak ac noise on VREF may not exceed +/-2% VREF(dc) VTT of transmitting device must track VREF of receiving device. VDDL VDDQ VREF VDDSPD VTT Min 1.7 1.7 1.7 0.49 x VDDQ 1.7 VREF-0.04 Max 1.9 1.9 1.9 0.51 x VDDQ 3.6 VREF+0.04 Unit V V V V V V 3 1 2 Note Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs INPUT DC LOGIC LEVEL Parameter Input High Voltage Input Low Voltage Symbol VIH(DC) VIL(DC) Min VREF + 0.125 -0.30 Max VDDQ + 0.3 VREF - 0.125 Unit V V Notes INPUT AC LOGIC LEVEL Parameter AC Input logic High AC Input logic Low Symbol VIH(AC) VIL(AC) DDR2 400/533 Min VREF + 0.250 Max VREF - 0.250 DDR2 667/800 Min VREF + 0.200 Max VREF - 0.200 Unit V V Notes AC INPUT TEST CONDITIONS Symbol VREF VSWING(MAX) SLEW Notes: 1. 2. 3. Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device under test. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(ac) min for rising edges and the range from VREF to VIL(ac) max for falling edges as shown in the below figure. AC timings are referenced with input waveforms switching from VIL (ac) to VIH (ac) on the positive transitions and VIH (ac) to VIL (ac) on the negative transitions. Condition Input reference voltage Input signal maximum peak to peak swing Input signal minimum slew rate Value 0.5 * VDDQ 1.0 1.0 Units V V V/ns Notes 1 1 2, 3 VDDQ VIH(ac) min VIH(dc) min VREF VIL(dc) max VIL(ac) max VSS delta TF Falling Slew = VREF - VIL(ac) max delta TF delta TR Rising Slew = VIH(ac)min - VREF delta TR VSWING(MAX) < Figure: AC Input Test Signal Waveform> Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs Differential Input AC logic Level Symbol VID (ac) VIX (ac) Parameter ac differential input voltage ac differential cross point voltage Min. 0.5 0.5 * VDDQ - 0.175 Max. VDDQ + 0.6 0.5 * VDDQ + 0.175 Units V V Note 1 2 1. VIN(DC) specifies the allowable DC execution of each input of differential pair such as CK DQS, DQS, LDQS, LDQS, UDQS and UDQS. 2. VID(DC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input (such as CK, DQS, LDQS or UDQS) level and VCP is the complementary input (such as CK, DQS, LDQS or UDQS) level. The minimum value is equal to VIH(DC) - VIL(DC). VDDQ VTR VID VCP VSSQ < Differential signal levels > Notes: 1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V IH(AC) - VIL(AC). 2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to track variations in VDDQ. VIX(AC) indicates the voltage at which differential input signals must cross. Crossing point VIX or VOX DIFFERENTIAL AC OUTPUT PARAMETERS Symbol VOX (ac) Note: 1. The typical value of VOX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ. VOX(AC) indicates the voltage at which differential output signals must cross. Parameter ac differential cross point voltage Min. 0.5 * VDDQ - 0.125 Max. 0.5 * VDDQ + 0.125 Units V Note 1 Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs OUTPUT BUFFER LEVELS OUTPUT AC TEST CONDITIONS Symbol VOTR Notes: 1. The VDDQ of the device under test is referenced. Parameter Output Timing Measurement Reference Level SSTL_18 0.5 * VDDQ Units V Notes 1 OUTPUT DC CURRENT DRIVE Symbol IOH(dc) IOL(dc) Notes: 1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ and VDDQ - 280 mV. 2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV. 3. The dc value of VREF applied to the receiving device is set to VTT 4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device drive current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating point along a 21 ohm load line to define a convenient driver current for measurement. Parameter Output Minimum Source DC Current Output Minimum Sink DC Current SSTl_18 - 13.4 13.4 Units mA mA Notes 1, 3, 4 2, 3, 4 Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs PIN Capacitance (VDD=1.8V,VDDQ=1.8V, TA=25℃. f=1MHz) 1GB: HMP112V7EFR8C Pin CK0, CK0 CKE, ODT CS Address, RAS, CAS, WE DQ, DM, DQS, DQS Symbol CCK CI1 CI2 CI3 CIO Min 7 8 8 8 6 Max 11 12 12 12 9 Unit pF pF pF pF pF 2GB: HMP125V7EFR4C Pin CK0, CK0 CKE, ODT CS Address, RAS, CAS, WE DQ, DM, DQS, DQS Symbol CCK CI1 CI2 CI3 CIO Min 7 8 10 8 6 Max 11 12 15 12 9 Unit pF pF pF pF pF 4GB: HMP351V7EMR4C Pin CK0, CK0 CKE, ODT CS Address, RAS, CAS, WE DQ, DM, DQS, DQS Symbol CCK CI1 CI2 CI3 CIO Min 9.5 10.5 10.5 10.5 17 Max 10.5 16 16 16 21 Unit pF pF pF pF pF Note: 1. Pins not under test are tied to GND. 2. These value are guaranteed by design and tested on a sample basis only. Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs IDD SPECIFICATIONS (TCASE: 0 to 95oC) 1GB, 128M x 72 VLP Registered DIMM: HMP112V7EFR8C Symbol IDD0 IDD1 IDD2P IDD2Q IDD2N IDD3P-F IDD3P-S IDD3N IDD4W IDD4R IDD5 IDD6 IDD7 C4 (533@CL4) 1235 1325 740 893 965 875 758 1055 1730 1730 2090 540 2225 Y5 (667@CL5) 1280 1370 740 920 1010 875 758 1100 1955 1910 2135 540 2405 S6 (800@CL6) 1325 1415 740 938 1055 875 758 1145 2180 2090 2180 540 2720 Unit mA mA mA mA mA mA mA mA mA mA mA mA mA Notes 1 2GB, 256M x 72 VLP Registered DIMM: HMP125V7EFR4C Symbol IDD0 IDD1 IDD2P IDD2Q IDD2N IDD3P-F IDD3P-S IDD3N IDD4W IDD4R IDD5 IDD6 IDD7 C4 (533@CL4) 1820 2000 830 1136 1280 1100 866 1460 2810 2810 3330 630 3800 Y5 (667@CL5) 1910 2090 830 1190 1370 1100 866 1550 3260 3170 3420 630 4160 S6 (800@CL6) 2000 2180 830 1226 1460 1100 866 1640 3710 3530 3510 630 4790 Unit mA mA mA mA mA mA mA mA mA mA mA mA mA Notes 1 Notes: 1. IDD6 current values are guaranteed up to Tcase of 85oC max. Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs 4GB, 256M x 72 VLP Registered DIMM: HMP351V7EMR4C Symbol IDD0 IDD1 IDD2P IDD2Q IDD2N IDD3P-F IDD3P-S IDD3N IDD4W IDD4R IDD5 IDD6 IDD7 C4 (533@CL4) 2450 2630 1010 1622 1910 1550 1082 2270 3440 3440 3960 810 4430 Y5 (667@CL5) 2630 2810 1010 1730 2090 1550 1082 2450 3980 3890 4140 810 4880 S6 (800@CL6) 2810 2990 1010 1802 2270 1550 1082 2630 4520 4340 4320 810 5600 Unit mA mA mA mA mA mA mA mA mA mA mA mA mA Notes 1 Notes: 1. IDD6 current values are guaranteed up to Tcase of 85oC max. Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs IDD Measurement Conditions Symbol IDD0 Conditions Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin (IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING Operating one bank active-read-precharge current; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin (IDD), tRCD = tRCD(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W Precharge power-down current; All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Precharge quiet standby current; All banks idle; tCK = tCK(IDD);CKE is HIGH, CS is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING Active power-down current; All banks open; tCK = tCK(IDD); CKE is LOW; Fast PDN Exit MRS(12) = 0 Other control and address bus inputs are STABLE; Data bus inputs are FLOATSlow PDN Exit MRS(12) = 1 ING Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax (IDD), tRP =tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax (IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax (IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W Burst refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING Self refresh current; CK and CK at 0V; CKE ≤ 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING. IDD6 current values are guaranted up to Tcase of 85℃ max. Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; - Refer to the following page for detailed timing conditions Units mA IDD1 mA mA mA mA mA mA mA IDD2P IDD2Q IDD2N IDD3P IDD3N IDD4W mA IDD4R mA IDD5B mA IDD6 mA IDD7 mA Notes: 1. IDD specifications are tested after the device is properly initialized 2. Input slew rate is specified by AC Parametric Test Condition 3. IDD parameters are specified with ODT disabled. 4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combinations of EMRS bits 10 and 11. 5. Definitions for IDD LOW is defined as Vin ≤ VILAC (max) HIGH is defined as Vin ≥ VIHAC (min) STABLE is defined as inputs stable at a HIGH or LOW level FLOATING is defined as inputs at VREF = VDDQ/2 SWITCHING is defined as: inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals, and inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including masks or strobes. Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs Electrical Characteristics & AC Timings Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin Speed Bin (CL-tRCD-tRP) Parameter CAS Latency tRCD tRP tRC tRAS DDR2-800(S6) 6-6-6 min 6 15 15 60 45 DDR2-667(Y5) 5-5-5 min 5 15 15 60 45 DDR2-533 (C4) 4-4-4 min 4 15 15 60 45 DDR2-400 (E3) 3-3-3 min 3 15 15 55 40 Unit ns ns ns ns ns AC Timing Parameters by Speed Grade DDR2-400 Parameter Data-Out edge to Clock edge Skew DQS-Out edge to Clock edge Skew Clock High Level Width Clock Low Level Width Clock Half Period System Clock Cycle Time DQ and DM input setup time DQ and DM input hold time Control & Address input Pulse Width for each input DQ and DM input pulse width for each input pulse width for each input Data-out high-impedance window from CK, /CK DQS low-impedance time from CK/CK DQ low-impedance time from CK/CK DQS-DQ skew for DQS and associated DQ signals DQ hold skew factor DQ/DQS output hold time from DQS Write command to first DQS latching transition DQS input high pulse width DQS input low pulse width DQS falling edge to CK setup time DQS falling edge hold time from CK Mode register set command cycle time Write preamble Write postamble DDR2-533 Unit Note Min -500 -500 0.45 0.45 min (tCL, tCH) 3750 100 225 0.6 0.35 tAC min 2*tAC min tHP - tQHS WL - 0.25 0.35 0.35 0.2 0.2 2 0.35 0.4 Symbol Min tAC tDQSCK tCH tCL tHP tCK tDS tDH tIPW tDIPW tHZ tLZ(DQS) tLZ(DQ) tDQSQ tQHS tQH tDQSS tDQSH tDQSL tDSS tDSH tMRD tWPRE tWPST -600 -500 0.45 0.45 min (tCL, tCH) 5000 150 275 0.6 0.35 tAC min 2*tAC min tHP - tQHS WL - 0.25 0.35 0.35 0.2 0.2 2 0.35 0.4 Max 600 500 0.55 0.55 8000 tAC max tAC max tAC max 350 450 WL + 0.25 0.6 Max 500 450 0.55 0.55 8000 tAC max tAC max tAC max 300 400 WL + 0.25 0.6 ps ns CK CK ns ps ps ps tCK tCK ps ps ps ps ps ps tCK tCK tCK tCK tCK tCK tCK tCK 1 1 Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs - continued DDR2-400 Parameter Address and control input setup time Address and control input hold time Read preamble Read postamble Auto-Refresh to Active/Auto-Refresh command period Row Active to Row Active Delay for 1KB page size Row Active to Row Active Delay for 2KB page size Four Activate Window for 1KB page size Four Activate Window for 2KB page size CAS to CAS command delay Write recovery time Auto Precharge Write Recovery + Precharge Time Write to Read Command Delay Internal read to precharge command delay Exit self refresh to a non-read command Exit self refresh to a read command Exit precharge power down to any non-read command Exit active power down to read command Exit active power down to read command (Slow exit, Lower power) CKE minimum pulse width (high and low pulse width) ODT turn-on delay ODT turn-on ODT turn-on (Power-Down mode) ODT turn-off delay ODT turn-off DDR2-533 Unit Note Min 250 375 0.9 0.4 Symbol Min tIS tIH tRPRE tRPST tRFC tRRD tRRD tFAW tFAW tCCD tWR tDAL tWTR tRTP tXSNR tXSRD tXP tXARD tXARDS tCKE tAOND tAON tAONPD tAOFD tAOF tAOFPD tANPD tAXPD tOIT tDelay tREFI tREFI 350 475 0.9 0.4 Max 1.1 0.6 Max 1.1 0.6 ps ps tCK tCK 127.5 7.5 10 37.5 50 2 15 tWR + tRP 10 7.5 tRFC + 10 200 2 2 6 - AL 3 2 tAC (min) tAC(min)+2 2.5 tAC (min) tAC (min)+2 - 127.5 7.5 10 37.5 50 2 - ns ns ns ns ns tCK - 15 tWR + tRP 7.5 7.5 tRFC + 10 - ns tCK ns ns ns - 200 2 2 6 - AL 3 - tCK tCK tCK tCK tCK 2 tAC(max)+1 2tCK+tAC(m ax)+1 2.5 tAC (max)+ 0.6 2.5tCK+tAC( max)+1 2 tAC (min) tAC(min)+2 2.5 tAC (min) tAC(min)+2 2 tAC(max)+1 2tCK+tAC(m ax)+1 2.5 tAC (max)+ 0.6 2.5tCK+tAC( max)+1 tCK ns ns tCK ns ns tCK tCK ODT turn-off (Power-Down mode) ODT to power down entry latency 3 8 0 tIS + tCK + tIH 3 8 12 0 tIS + tCK + tIH ODT power down exit latency OCD drive mode output delay Minimum time clocks remains ON after CKE asynchronously drops LOW Average periodic Refresh Interval 12 ns ns - 7.8 3.9 - 7.8 3.9 us us 2 3 Note: 1. For details and notes, please refer to the relevant HYNIX component datasheet (H5PS1G[4,8]3EFR). 2. 0°C ≤ TCASE ≤ 85°C 3. 85°C ＜ TCASE ≤ 95°C Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs Parameter DQ output access time from CK/CK DQS output access time from CK/CK CK high-level width CK low-level width CK half period Clock cycle time, CL=x DQ and DM input setup time (differential strobe) Symbol tAC tDQSCK tCH tCL tHP tCK tDS tDH tIPW tDIPW tHZ tLZ(DQS) tLZ(DQ) tDQSQ tQHS tQH tDQSS tDQSH tDQSL tDSS tDSH tMRD tWPRE tWPST tIS tIH tRPRE tRPST tRFC DDR2-667 min -450 -400 0.45 0.45 min(tCL, tCH) 3000 100 175 0.6 0.35 tAC min 2*tAC min tHP - tQHS - 0.25 0.35 0.35 0.2 0.2 2 0.35 0.4 200 275 0.9 0.4 127.5 7.5 10 37.5 50 DDR2-800 min -400 -350 0.45 0.45 min(tCL, tCH) 2500 50 125 0.6 0.35 tAC min 2*tAC min tHP - tQHS - 0.25 0.35 0.35 0.2 0.2 2 0.35 0.4 175 250 0.9 0.4 127.5 7.5 10 35 45 tAC max tAC max tAC max 200 300 + 0.25 0.6 1.1 0.6 - max +450 +400 0.55 0.55 8000 tAC max tAC max tAC max 240 340 + 0.25 0.6 1.1 0.6 - max +400 +350 0.55 0.55 - Unit Note ps ps tCK tCK ps ps ps ps tCK tCK ps ps ps ps ps ps tCK tCK tCK tCK tCK tCK tCK tCK ps ps tCK tCK ns ns ns ns ns 1 1 DQ and DM input hold time (differential strobe) Control & Address input pulse width for each input DQ and DM input pulse width for each input Data-out high-impedance time from CK/CK DQS low-impedance time from CK/CK DQ low-impedance time from CK/CK DQS-DQ skew for DQS and associated DQ signals DQ hold skew factor DQ/DQS output hold time from DQS First DQS latching transition to associated clock edge DQS input high pulse width DQS input low pulse width DQS falling edge to CK setup time DQS falling edge hold time from CK Mode register set command cycle time Write preamble Write postamble Address and control input setup time Address and control input hold time Read preamble Read postamble Auto-Refresh to Active/Auto-Refresh command period Active to active command period for 1KB page size products Active to active command period for 2KB page size products Four Active Window for 1KB page size products Four Active Window for 2KB page size products tRRD tRRD tFAW tFAW Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs - continued Parameter CAS to CAS command delay Write recovery time Internal write to read command delay Internal read to precharge command delay Exit self refresh to a non-read command Exit self refresh to a read command Exit precharge power down to any non-read command Exit active power down to read command Exit active power down to read command (Slow exit, Lower power) CKE minimum pulse width (high and low pulse width) ODT turn-on delay ODT turn-on ODT turn-on (Power-Down mode) ODT turn-off delay ODT turn-off ODT turn-off (Power-Down mode) ODT to power down entry latency ODT power down exit latency OCD drive mode output delay Minimum time clocks remains ON after CKE asynchronously drops LOW Average periodic Refresh Interval Symbol tCCD tWR tWTR tRTP tXSNR tXSRD tXP tXARD tXARDS tCKE tAOND tAON tAONPD tAOFD tAOF tAOFPD tANPD tAXPD tOIT tDelay tREFI tREFI DDR2-667 min 2 15 WR+tRP 7.5 7.5 tRFC + 10 200 2 2 7 - AL 3 2 tAC (min) tAC(min)+2 2.5 tAC (min) tAC (min) +2 3 8 0 tIS + tCK + tIH 7.8 3.9 12 2 tAC (max) +0.7 - DDR2-800 min 2 15 WR+tRP 7.5 7.5 tRFC + 10 200 2 2 8 - AL 3 2 tAC (min) 2 tAC (max) +0.7 - max max Unit Note tCK ns tCK ns ns ns tCK tCK tCK tCK tCK tCK ns ns tCK ns ns tCK tCK Auto precharge write recovery + precharge time tDAL 2tCK+ tAC (min) 2tCK+ tAC(max)+1 +2 tAC(max)+1 2.5 tAC (max)+ 0.6 2.5 tAC (min) 2.5 tAC (max) +0.6 2.5tCK+ tAC (min) 2.5tCK+ tAC(max)+1 +2 tAC(max)+1 3 8 0 tIS + tCK + tIH 7.8 3.9 12 ns ns us us 2 3 Note: 1. For details and notes, please refer to the relevant HYNIX component datasheet (H5PS1G[4,8]3EFR). 2. 0°C ≤ TCASE ≤ 85°C 3. 85°C ＜ TCASE ≤ 95°C Rev. 0.3 / Sep. 2008 1240pin DDR2 VLP Registered DIMMs PACKAGE OUTLINE 128Mx72 (1 rank) - HMP112V7EFR8C Front 133.35 Register PLL Detail A Detail B 5.175 63.0 5.0 55.0 5.175 Back 10.0 Detail of Contacts A 0.8 ± 0.05 Detail of Contacts B 2.50 Side 4.00 max 2.50 ± 0.20 1.00 1.50 ± 0.10 5.00 1.27 ± 0.10 max Note) All dimensions are in millimeters unless otherwise stated. Rev. 0.3 / Sep. 2008 2.50 ± 0.20 0.20 3.80 18.29 4.0 ± 0.1 Register 1240pin DDR2 VLP Registered DIMMs PACKAGE OUTLINE 256Mx72 (1 rank) - HMP125V7EFR4C Front 133.35 Register PLL Detail A Detail B 5.175 63.0 5.0 55.0 5.175 Back 10.0 Detail of Contacts A 0.8 ± 0.05 Detail of Contacts B 2.50 Side 4.00 max 2.50 ± 0.20 1.00 1.50 ± 0.10 5.00 1.27 ± 0.10 max Note) All dimensions are in millimeters unless otherwise stated. Rev. 0.3 / Sep. 2008 2.50 ± 0.20 0.20 3.80 18.29 4.0 ± 0.1 Register 1240pin DDR2 VLP Registered DIMMs PACKAGE OUTLINE 256Mx72 (2 rank) - HMP351V7EMR4C Front 133.35 Register PLL Detail A Detail B 5.175 63.0 5.0 55.0 5.175 Back 10.0 Detail of Contacts A 0.8 ± 0.05 Side Detail of Contacts B 2.50 7.55 max 2.50 ± 0.20 1.00 1.50 ± 0.10 5.00 1.27 ± 0.10 max Note) All dimensions are in millimeters unless otherwise stated. Rev. 0.3 / Sep. 2008 2.50 ± 0.20 0.20 3.80 18.29 4.0 ± 0.1 Register 1240pin DDR2 VLP Registered DIMMs REVISION HISTORY Revision 0.1 0.2 0.3 Initial Release Corrected typos and adjusted DIMM line-up Editorial Correction History Date Jul. 2008 Aug. 2008 Sep. 2008 Remark Rev. 0.3 / Sep. 2008