IC62LV2568L-55TI

IC62LV2568L IC62LV2568LL IC62LV2568L IC62LV2568LL 256K x 8 LOW POWER and LOW V++ CMOS STATIC RAM .EATURES • Access times of 55, 70, 100 ns • Low active power: 126 mW (max, L, LL) • Low standby power: 36 µW (max, L) and 7.2 µW (max, LL) CMOS standby • Low data retention voltage: 1.5V (min.) • Available in Low Power (-L) and Ultra-Low Power (-LL) • Output Enable (OE) and two Chip Enable • TTL compatible inputs and outputs • Single 2.7V-3.6V power supply • Available in the 32-pin 8x20mm TSOP-1, 32-pin 8x13.4mm TSOP-1 and 48-pin 6*8mm T.-BGA DESCRIPTION The 1+51 IC62LV2568L and IC62LV2568LL are low power and low VCC, 262,144-bit words by 8 bits CMOS static RAMs. They are fabricated using 1+51's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IC62LV2568L and IC62LV2568LL are available in 32-pin 8*20mm TSOP-1, 8*13.4mm TSOP-1 and 48-pin 6*8mm T.BGA. .UNCTIONAL BLOCK DIAGRAM A0-A17 DECODER 2048 x 128 x 8 MEMORY ARRAY VCC GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CE1 CE2 OE WE CONTROL CIRCUIT ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc. Integrated Circuit Solution Inc. LPSR001-0A 05/01/2001 1 IC62LV2568L IC62LV2568LL PIN CON.IGURATIONS 32-Pin 8*20mm TSOP-1, 8*13.4mm STSOP-1 A11 A9 A8 A13 WE CE2 A15 Vcc A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 48-Pin 6*8mm T.-BGA 1 A B C D E F G H A0 I/O4 I/O5 GND Vcc I/O6 I/O7 A9 2 A1 A2 3 CE2 WE NC 4 A3 A4 A5 5 A6 A7 6 A8 I/O0 I/O1 Vcc GND NC OE A10 CE1 A11 A17 A16 A12 A15 A13 I/O2 I/O3 A14 PIN DESCRIPTIONS A0-A17 CE1 CE2 OE WE I/O0-I/O7 NC Vcc GND Address Inputs Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Write Enable Input Data Input/Output No Connection Power Ground OPERATING RANGE Range Commercial Industrial Ambient Temperature 0°C to +70°C –40°C to +85°C VCC 2.7V - 3.6V 2.7V - 3.6V 2 Integrated Circuit Solution Inc. LPSR001-0A 05/01/2001 IC62LV2568L IC62LV2568LL TRUTH TABLE Mode Not Selected (Power-down) Output Disabled Read Write WE X X H H L CE1 H X L L L CE2 X L H H H OE X X H L X I/O Operation High-Z High-Z High-Z DOUT DIN Vcc Current ISB, ISB ISB, ISB ICC ICC ICC ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM VCC TBIAS TSTG PT Parameter Terminal Voltage with Respect to GND Vcc related to GND Temperature Under Bias Storage Temperature Power Dissipation Value –0.5 to Vcc + 0.5 –0.3 to +4.0 –40 to +85 –65 to +150 0.7 Unit V V °C °C W Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1) Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit p. p. Notes: 1. Tested initially and after any design or process changes that may affect these parameters. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol VOH VOL VIH VIL(1) ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage Test Conditions VCC = Min., IOH = –1.0 mA VCC = Min., IOL = 2.1 mA Min. 2.2 — 2.2 –0.3 –1 –1 Max. — 0.4 VCC + 0.3 0.4 1 1 Unit V V V V µA µA GND ≤ VIN ≤ VCC GND ≤ VOUT ≤ VCC Notes: 1. VIL = –2.0V for pulse width less than 10 ns. Integrated Circuit Solution Inc. LPSR001-0A 05/01/2001 3 IC62LV2568L IC62LV2568LL IC62LV2568L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter ICC ISB Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., IOUT = 0 mA, f = fMAX Com. Ind. -55 Min. Max. — — — — — — 40 45 0.4 1.0 35 50 -70 Min. Max. — — — — — — 30 35 0.4 1.0 35 50 -100 Min. Max. — — — — — — 20 25 0.4 1.0 35 50 Unit mA mA VCC = Max., Com. VIN = VIH or VIL, Ind. CE1 ≥ VIH or CE2 ≤ VIL, f = 0 VCC = Max., f = 0 Com. Ind. CE1 ≥ VCC – 0.2V, CE2 ≤ 0.2V, or VIN ≥ VCC – 0.2V, VIN ≤ 0.2V ISB µA Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. IC62LV2568LL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter ICC ISB Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., IOUT = 0 mA, f = fMAX Com. Ind. -55 Min. Max. — — — — — — 40 45 0.4 1.0 10 15 -70 Min. Max. — — — — — — 30 35 0.4 1.0 10 15 -100 Min. Max. — — — — — — 20 25 0.4 1.0 10 15 Unit mA mA VCC = Max., Com. VIN = VIH or VIL, Ind. CE1 ≥ VIH or CE2 ≤ VIL, f = 0 VCC = Max., f = 0 Com. CE ≥ VCC – 0.2V, Ind. CE2 ≤ 0.2V, or VIN ≥ VCC – 0.2V, VIN ≤ 0.2V ISB µA Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 4 Integrated Circuit Solution Inc. LPSR001-0A 05/01/2001 IC62LV2568L IC62LV2568LL READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CE1 Access Time CE2 Access Time OE Access Time (2) Min. 55 — 10 — — — 5 — 10 10 0 -55 Max. — 55 — 55 55 30 — 20 — — 20 Min. 70 — 10 — — — 5 0 10 10 0 -70 Max. — 70 — 70 70 35 — 25 — — 25 -100 Min. Max. 100 — 15 — — — 5 0 10 10 0 — 100 — 100 100 50 — 30 — — 30 Unit ns ns ns ns ns ns ns ns ns ns ns tRC tAA tOHA tACE1 tACE2 tDOE tHZOE tLZOE(2) OE to Low-Z Output OE to High-Z Output tLZCE1(2) CE1 to Low-Z Output tLZCE2(2) CE2 to Low-Z Output tHZCE (2) CE1 or CE2 to Low-Z Output Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0.4V to 2.2V and output loading specified in .igure 1. 2. Tested with the load in .igure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and .all Times Input and Output Timing and Reference Level Output Load Unit 0.4V to 2.2V 5 ns 1.5V See .igures 1 and 2 AC TEST LOADS 1 TTL OUTPUT 100 pF Including jig and scope OUTPUT 5 pF Including jig and scope 1 TTL .igure 1 .igure 2 Integrated Circuit Solution Inc. LPSR001-0A 05/01/2001 5 IC62LV2568L IC62LV2568LL AC TEST LOADS READ CYCLE NO.1(1,2) tRC ADDRESS tAA tOHA tOHA DATA VALID DOUT AC WAVE.ORMS READ CYCLE NO. 2(1,3) tRC ADDRESS tAA tOHA OE tDOE tHZOE CE1 tACE1/tACE2 tLZOE CE2 tLZCE1/ tLZCE2 HIGH-Z tHZCE DATA VALID DOUT Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE1 = VIL, CE2 = VIL. 3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions. 6 Integrated Circuit Solution Inc. LPSR001-0A 05/01/2001 IC62LV2568L IC62LV2568LL WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range, Standard and Low Power) Symbol Parameter Write Cycle Time CE1 to Write End CE2 to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time WE Pulse Width Data Setup to Write End Data Hold from Write End (3) Min. 55 45 45 45 0 0 50 25 0 — 5 -55 Max. — — — — — — — — — 25 — Min. 70 65 65 65 0 0 55 30 0 — 5 -70 Max. — — — — — — — — — 25 — -100 Min. Max 100 80 80 80 0 0 70 40 0 — 5 — — — — — — — — — 30 — Unit ns ns ns ns ns ns ns ns ns ns ns tWC tSCE1 tSCE2 tAW tHA tSA tPWE(4) tSD tHD tHZWE tLZWE (3) WE LOW to High-Z Output WE HIGH to Low-Z Output Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0.4V to 2.2V and output loading specified in .igure 1. 2. Tested with the load in .igure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 4. Tested with OE HIGH. AC WAVE.ORMS WRITE CYCLE NO. 1 (WE Controlled)(1,2) tWC ADDRESS tSCE1 tHA CE1 tSCE2 CE2 tAW tPWE(4) tSA tHZWE HIGH-Z WE tLZWE DOUT DATA UNDEFINED tSD tHD DIN DATA-IN VALID Integrated Circuit Solution Inc. LPSR001-0A 05/01/2001 7 IC62LV2568L IC62LV2568LL WRITE CYCLE NO. 2 (CE1, CE2 Controlled)(1,2) tWC ADDRESS tSA tSCE1 tHA CE1 tSCE2 CE2 tAW tPWE(4) WE tHZWE tLZWE HIGH-Z DOUT DATA UNDEFINED tSD tHD DIN DATA-IN VALID Notes: 1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the HIGH-z state if OE =VIH. 8 Integrated Circuit Solution Inc. LPSR001-0A 05/01/2001 IC62LV2568L IC62LV2568LL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter Vcc for Data Retention Data Retention Current Test Condition See Data Retention Waveform Vcc = 2.0V, CE1 ≥ Vcc – 0.2V Com. (-L) Com. (-LL) Ind. (-L) Ind. (-LL) Min. 1.5 — — — — 0 Max. 3.6 20 5 25 7 — — Unit V µA µA µA µA ns ns VDR IDR tSDR tRDR Data Retention Setup Time Recovery Time See Data Retention Waveform See Data Retention Waveform tRC DATA RETENTION WAVE.ORM tSDR VCC 2.7V (CE1 Controlled) Data Retention Mode tRDR 2.2V VDR CE1 ≥ VCC - 0.2V CE GND DATA RETENTION WAVE.ORM (CE2 Controlled) Data Retention Mode VCC 2.7V t SDR CE2 2.2V VDR 0.4V GND CE2 ≤ 0.2V t RDR Integrated Circuit Solution Inc. LPSR001-0A 05/01/2001 9 IC62LV2568L IC62LV2568LL ORDERING IN.ORMATION Commercial Range: 0°C to +70°C Speed (ns) Order Part No. 55 IC62LV2568L-55T IC62LV2568L-55H IC62LV2568L-55B IC62LV2568L-70T IC62LV2568L-70H IC62LV2568L-70B IC62LV2568L-100T IC62LV2568L-100H IC62LV2568L-100B Package 8*20mm TSOP-1 8*13.4mm TSOP-1 6*8mm T.-BGA 8*20mm TSOP-1 8*13.4mm TSOP-1 6*8mm T.-BGA 8*20mm TSOP-1 8*13.4mm TSOP-1 6*8mm T.-BGA Industrial Range: -40°C to +85°C Speed (ns) Order Part No. 55 IC62LV2568L-55TI IC62LV2568L-55HI IC62LV2568L-55BI IC62LV2568L-70TI IC62LV2568L-70HI IC62LV2568L-70BI IC62LV2568L-100TI IC62LV2568L-100HI IC62LV2568L-100BI Package 8*20mm TSOP-1 8*13.4mm TSOP-1 6*8mm T.-BGA 8*20mm TSOP-1 8*13.4mm TSOP-1 6*8mm T.-BGA 8*20mm TSOP-1 8*13.4mm TSOP-1 6*8mm T.-BGA 70 70 100 100 HEADQUARTER: NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU, TAIWAN, R.O.C. TEL: 886-3-5780333 .ax: 886-3-5783000 Integrated Circuit Solution Inc. BRANCH O..ICE: 7., NO. 106, SEC. 1, HSIN-TAI 5TH ROAD, HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C. TEL: 886-2-26962140 .AX: 886-2-26962252 http://www.icsi.com.tw 10 Integrated Circuit Solution Inc. LPSR001-0A 05/01/2001