IS41C4100-35T

I C41C4100 IC41LV4100 Document Title 1Mx4 bit Dynamic RAM with EDO Page Mode Revision History Revision No 0A History Initial Draft Draft Date September 5,2001 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices. Integrated Circuit Solution Inc. DR027-0A 09/05/2001 1 I C41C4100 IC41LV4100 1M x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES Extended Data-Out (EDO) Page Mode access cycle TTL compatible inputs and outputs; tristate I/O Refresh Interval: 1024 cycles /16 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), Hidden • Single power supply: 5V ± 10% (IC41C4100) 3.3V ± 10% (IC41LV4100) • Industrail Temperature Range -40oC to 85oC • • • • DESCRIPTION The ICSI IC41C4100 and IC41LV4100 is a 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memories. The IC41C4100 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1024 random accesses within a single row with access cycle time as short as 12 ns per 4-bit word. These features make the IC41C4100and IC41LV4100 ideally suited for, digital signal processing, high-performance audio systems, and peripheral applications. The IC41C4100 is packaged in a 20-pin 300mil SOJ and 300mil TSOP-2. KEY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. EDO Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) -35 35 10 18 12 60 -50 50 14 25 20 90 -60 60 15 30 25 110 Unit ns ns ns ns ns PIN CONFIGURATION 20 (26) Pin SOJ, TSOP-2 I/O0 I/O1 WE RAS A9 1 2 3 4 5 26 25 24 23 22 GND I/O3 I/O2 CAS OE PIN DESCRIPTIONS A0-A9 I/O0-3 WE OE RAS CAS Vcc Address Inputs Data Inputs/Outputs Write Enable Output Enable Row Address Strobe Column Address Strobe Power Ground No Connection A0 A1 A2 A3 VCC 9 10 11 12 13 18 17 16 15 14 A8 A7 A6 A5 A4 GND NC 2 Integrated Circuit Solution Inc. DR027-0A 09/05/2001 I C41C4100 IC41LV4100 FUNCTIONAL BLOCK DIAGRAM OE WE CAS CAS CLOCK GENERATOR WE CONTROL LOGICS OE CONTROL LOGIC CAS WE OE RAS RAS CLOCK GENERATOR DATA I/O BUS REFRESH COUNTER DATA I/O BUFFERS ROW DECODER RAS COLUMN DECODERS SENSE AMPLIFIERS I/O0-I/O3 MEMORY ARRAY 1,048,576 x 4 ADDRESS BUFFERS A0-A9 Integrated Circuit Solution Inc. DR027-0A 09/05/2001 3 I C41C4100 IC41LV4100 TRUTH TABLE Function Standby Read: Write: (Early Write) Read-Write EDO Page-Mode Read RAS H L L L L L L L L L L L→H→L L→H→L L H→L CAS H L L L H→L H→L L→H H→L H→L H→L H→L L L H L WE X H L H→L H H H L L H→L H→L H L X X O E Address tR/tC X X L ROW/COL X ROW/COL L→H ROW/COL L ROW/COL L NA/COL L NA/NA X ROW/COL X NA/COL L→H ROW/COL L→H NA/COL L ROW/COL X ROW/COL X ROW/NA X X I/O High-Z DOUT DIN DOUT, DIN DOUT DOUT DOUT DIN DIN DOUT, DIN DOUT, DIN DOUT DIN High-Z High-Z EDO Page-Mode Write EDO Page-Mode Read-Write Hidden Refresh RAS-Only Refresh CBR Refresh 1st Cycle: 2nd Cycle: Any Cycle: 1st Cycle: 2nd Cycle: 1st Cycle: 2nd Cycle: Read Write 4 Integrated Circuit Solution Inc. DR027-0A 09/05/2001 I C41C4100 IC41LV4100 Functional Description The IC41C4100 and IC41LV4100 is a CMOS DRAM optimized for high-speed bandwidth, low power applications. During READ or WRITE cycles, each bit is uniquely addressed through the 20 address bits. These are entered 10 bits (A0-A9) at a time. The row address is latched by the Row Address Strobe (RAS). The column address is latched by the Column Address Strobe (CAS) . Refresh Cycle To retain data, 1024 refresh cycles are required in each 16 ms period. There are two ways to refresh the memory. 1. By clocking each of the 1024 row addresses (A0 through A9) with RAS at least once every 16 ms. Any read, write, read-modify-write or RAS-only cycle refreshes the addressed row. 2. Using a CAS-before-RAS refresh cycle. CAS-beforeRAS refresh is activated by the falling edge of RAS, while holding CAS LOW. In CAS-before-RAS refresh cycle, an internal 10-bit counter provides the row addresses and the external address inputs are ignored. CAS-before-RAS is a refresh-only mode and no data access or device selection is allowed. Thus, the output remains in the High-Z state during the cycle. Memory Cycle A memory cycle is initiated by bring RAS LOW and it is terminated by returning both RAS and CAS HIGH. To ensures proper device operation and data integrity any memory cycle, once initiated, must not be ended or aborted before the minimum tRAS time has expired. A new cycle must not be initiated until the minimum precharge time tRP, tCP has elapsed. Extended Data Out Page Mode EDO page mode operation permits all 1024 columns within a selected row to be randomly accessed at a high data rate. In EDO page mode read cycle, the data-out is held to the next CAS cycle’s falling edge, instead of the rising edge. For this reason, the valid data output time in EDO page mode is extended compared with the fast page mode. In the fast page mode, the valid data output time becomes shorter as the CAS cycle time becomes shorter. Therefore, in EDO page mode, the timing margin in read cycle is larger than that of the fast page mode even if the CAS cycle time becomes shorter. In EDO page mode, due to the extended data function, the CAS cycle time can be shorter than in the fast page mode if the timing margin is the same. The EDO page mode allows both read and write operations during one RAS cycle, but the performance is equivalent to that of the fast page mode in that case. Read Cycle A read cycle is initiated by the falling edge of CAS or OE, whichever occurs last, while holding WE HIGH. The column address must be held for a minimum time specified by tAR. Data Out becomes valid only when tRAC, tAA, tCAC and tOE are all satisfied. As a result, the access time is dependent on the timing relationships between these parameters. Write Cycle A write cycle is initiated by the falling edge of CAS and WE, whichever occurs last. The input data must be valid at or before the falling edge of CAS or WE, whichever occurs first. Power-On After application of the VCC supply, an initial pause of 200 µs is required followed by a minimum of eight initialization cycles (any combination of cycles containing a RAS signal). During power-on, it is recommended that RAS track with VCC or be held at a valid VIH to avoid current surges. Integrated Circuit Solution Inc. DR027-0A 09/05/2001 5 I C41C4100 IC41LV4100 ABSOLUTE MAXIMUM RATINGS(1) Symbol VT VCC IOUT PD TA TSTG Parameters Voltage on Any Pin Relative to GND Supply Voltage Output Current Power Dissipation Commercial Operation Temperature Industrial Operationg Temperature Storage Temperature 5V 3.3V 5V 3.3V Rating –1.0 to +7.0 –0.5 to +4.6 –1.0 to +7.0 –0.5 to +4.6 50 1 0 to +70 –40 to +85 –55 to +125 Unit V V mA W °C °C °C Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.) Symbol VCC VIH VIL TA Parameter Supply Voltage Input High Voltage Input Low Voltage Commercial Ambient Temperature Industrial Ambient Temperature 5V 3.3V 5V 3.3V 5V 3.3V Min. 4.5 3.0 2.4 2.0 –1.0 –0.3 0 –40 Typ. 5.0 3.3 — — — — — — Max. 5.5 3.6 VCC + 1.0 VCC + 0.3 0.8 0.8 70 85 Unit V V V °C °C CAPACITANCE(1,2) Symbol CIN1 CIN2 CIO Parameter Input Capacitance: A0-A9 Input Capacitance: RAS, CAS, WE, OE Data Input/Output Capacitance: I/O0-I/O3 Max. 5 7 7 Unit pF pF pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz. 6 Integrated Circuit Solution Inc. DR027-0A 09/05/2001 I C41C4100 IC41LV4100 ELECTRICAL CHARACTERISTICS(1) (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter IIL IIO VOH VOL ICC1 Input Leakage Current Output Leakage Current Output High Voltage Level Output Low Voltage Level Standby Current: TTL Test Condition Any input 0V ≤ VIN ≤ Vcc Other inputs not under test = 0V Output is disabled (Hi-Z) 0V ≤ VOUT ≤ Vcc IOH = –2.5 mA IOL =+2.1mA RAS, CAS ≥ VIH Commerical 5V Industrial 5V Commerical 3.3V Industrial 3.3V 5V 3.3V -35 -50 -60 -35 -50 -60 -35 -50 -60 -35 -50 -60 Speed Min. –10 –10 2.4 — — — — — — — — — — — — — — — — — — — Max. 10 10 — 0.4 2 3 1 2 1 0.5 110 95 85 90 80 70 110 95 85 110 95 85 Unit µA µA V V mA ICC2 ICC3 Standby Current: CMOS Operating Current: Random Read/Write(2,3,4) Average Power Supply Current Operating Current: EDO Page Mode(2,3,4) Average Power Supply Current Refresh Current: RAS-Only(2,3) Average Power Supply Current Refresh Current: CBR(2,3,5) Average Power Supply Current RAS, CAS ≥ VCC – 0.2V RAS, CAS, Address Cycling, tRC = tRC (min.) RAS = VIL, CAS, Cycling tPC = tPC (min.) RAS Cycling, CAS ≥ VIH tRC = tRC (min.) RAS, CAS Cycling tRC = tRC (min.) mA mA ICC4 mA ICC5 mA ICC6 mA Notes: 1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded. 2. Dependent on cycle rates. 3. Specified values are obtained with minimum cycle time and the output open. 4. Column-address is changed once each EDO page cycle. 5. Enables on-chip refresh and address counters. Integrated Circuit Solution Inc. DR027-0A 09/05/2001 7 I C41C4100 IC41LV4100 AC CHARACTERISTICS(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.) Symbol tRC tRAC tCAC tAA tRAS tRP tCAS tCP tCSH tRCD tASR tRAH tASC tCAH tAR tRAD tRAL tRPC tRSH tCLZ tCRP tOD tOE tOEHC tOEP tOES tRCS tRRH tRCH tWCH tWCR tWP tWPZ tRWL tCWL tWCS tDHR Parameter Random READ or WRITE Cycle Time Access Time from RAS(6, 7) Access Time from CAS(6, 8, 15) Access Time from Column-Address(6) RAS Pulse Width RAS Precharge Time CAS Pulse Width(26) CAS Precharge Time(9, 25) CAS Hold Time (21) RAS to CAS Delay Time(10, 20) Row-Address Setup Time Row-Address Hold Time Column-Address Setup Time(20) Column-Address Hold Time(20) Column-Address Hold Time (referenced to RAS) RAS to Column-Address Delay Time(11) Column-Address to RAS Lead Time RAS to CAS Precharge Time RAS Hold Time(27) CAS to Output in Low-Z(15, 29) CAS to RAS Precharge Time(21) Output Disable Time(19, 28, 29) Output Enable Time(15, 16) OE HIGH Hold Time from CAS HIGH OE HIGH Pulse Width OE LOW to CAS HIGH Setup Time Read Command Setup Time(17, 20) Read Command Hold Time (referenced to RAS)(12) Read Command Hold Time (referenced to CAS)(12, 17, 21) Write Command Hold Time(17, 27) Write Command Hold Time (referenced to RAS)(17) Write Command Pulse Width(17) WE Pulse Widths to Disable Outputs Write Command to RAS Lead Time(17) Write Command to CAS Lead Time(17, 21) Write Command Setup Time(14, 17, 20) Data-in Hold Time (referenced to RAS) -35 Min. Max. 60 — — — 35 20 6 5 35 11 0 6 0 6 30 10 18 0 8 3 5 3 0 10 10 5 0 0 0 5 30 5 10 8 8 0 30 — 35 10 18 10K — 10K — — 28 — — — — — 20 — — — — — 12 10 — — — — — — — — — — — — — — -50 Min. Max. 90 — — — 50 30 8 8 50 19 0 8 0 8 40 14 25 0 14 3 5 3 0 10 10 5 0 0 0 8 40 8 10 14 14 0 40 — 50 14 25 10K — 10K — — 36 — — — — — 25 — — — — — 12 15 — — — — — — — — — — — — — — -60 Min. Max. 110 — — — 60 40 10 10 60 20 0 10 0 10 40 15 30 0 15 3 5 3 — 10 10 5 0 0 0 10 50 10 10 15 15 0 40 — 60 15 30 10K — 10K — — 45 — — — — — 30 — — — — — 12 15 — — — — — — — — — — — — — — Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 8 Integrated Circuit Solution Inc. DR027-0A 09/05/2001 I C41C4100 IC41LV4100 AC CHARACTERISTICS (Continued)(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.) Symbol tACH tOEH tDS tDH tRWC tRWD tCWD tAWD tPC tRASP tCPA tPRWC tCOH tOFF tWHZ tCLCH tCSR tCHR tORD tREF tT Parameter Column-Address Setup Time to CAS Precharge during WRITE Cycle OE Hold Time from WE during READ-MODIFY-WRITE cycle(18) Data-In Setup Time(15, 22) Data-In Hold Time(15, 22) READ-MODIFY-WRITE Cycle Time RAS to WE Delay Time during READ-MODIFY-WRITE Cycle(14) CAS to WE Delay Time(14, 20) Column-Address to WE Delay Time(14) EDO Page Mode READ or WRITE Cycle Time(24) RAS Pulse Width in EDO Page Mode Access Time from CAS Precharge(15) EDO Page Mode READ-WRITE Cycle Time(24) Data Output Hold after CAS LOW Output Buffer Turn-Off Delay from CAS or RAS(13,15,19, 29) Output Disable Delay from WE Last CAS going LOW to First CAS returning HIGH(23) CAS Setup Time (CBR REFRESH)(30, 20) CAS Hold Time (CBR REFRESH)(30, 21) OE Setup Time prior to RAS during HIDDEN REFRESH Cycle Refresh Period (512 Cycles) Transition Time (Rise or Fall)(2, 3) 35 Min. Max. 15 8 0 6 80 45 25 30 12 35 — 40 5 3 3 10 8 8 0 — 1 — — — — — — — — — 100K 21 — — 15 15 — — — — 8 50 -50 Min. Max. 15 10 0 8 125 70 34 42 20 50 — 47 5 3 3 10 10 10 0 8 1 — — — — — — — — — 100K 27 — — 15 15 — — — — — 50 -60 Min. Max. 15 15 0 10 140 80 36 49 25 50 — 56 5 3 3 10 10 10 0 8 1 — — — — — — — — — 100K 34 — — 15 15 — — — — — 50 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ns AC TEST CONDITIONS Output load: Two TTL Loads and 50 pF (Vcc = 5.0V ±10%) One TTL Load and 50 pF (Vcc = 3.3V ±10%) Input timing reference levels: VIH = 2.4V, VIL = 0.8V (Vcc = 5.0V ±10%); VIH = 2.0V, VIL = 0.8V (Vcc = 3.3V ±10%) Output timing reference levels: VOH = 2.0V, VOL = 0.8V (Vcc = 5V ±10%, 3.3V ±10%) Integrated Circuit Solution Inc. DR027-0A 09/05/2001 9 I C41C4100 IC41LV4100 Notes: 1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded. 2. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between VIH and VIL (or between VIL and VIH) and assume to be 1 ns for all inputs. 3. In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner. 4. If CAS and RAS = VIH, data output is High-Z. 5. If CAS = VIL, data output may contain data from the last valid READ cycle. 6. Measured with a load equivalent to one TTL gate and 50 pF. 7. Assumes that tRCD ≤ tRCD (MAX). If tRCD is greater than the maximum recommended value shown in this table, tRAC will increase by the amount that tRCD exceeds the value shown. 8. Assumes that tRCD ≥ tRCD (MAX). 9. If CAS is LOW at the falling edge of RAS, data out will be maintained from the previous cycle. To initiate a new cycle and clear the data output buffer, CAS and RAS must be pulsed for tCP. 10. Operation with the tRCD (MAX) limit ensures that tRAC (MAX) can be met. tRCD (MAX) is specified as a reference point only; if tRCD is greater than the specified tRCD (MAX) limit, access time is controlled exclusively by tCAC. 11. Operation within the tRAD (MAX) limit ensures that tRCD (MAX) can be met. tRAD (MAX) is specified as a reference point only; if tRAD is greater than the specified tRAD (MAX) limit, access time is controlled exclusively by tAA. 12. Either tRCH or tRRH must be satisfied for a READ cycle. 13. tOFF (MAX) defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL. 14. tWCS, tRWD, tAWD and tCWD are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycle only. If tWCS ≥ tWCS (MIN), the cycle is an EARLY WRITE cycle and the data output will remain open circuit throughout the entire cycle. If tRWD ≥ tRWD (MIN), tAWD ≥ tAWD (MIN) and tCWD ≥ tCWD (MIN), the cycle is a READ-WRITE cycle and the data output will contain data read from the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until CAS and RAS or OE go back to VIH) is indeterminate. OE held HIGH and WE taken LOW after CAS goes LOW result in a LATE WRITE (OE-controlled) cycle. 15. Output parameter (I/O) is referenced to corresponding CAS input. 16. During a READ cycle, if OE is LOW then taken HIGH before CAS goes HIGH, I/O goes open. If OE is tied permanently LOW, a LATE WRITE or READ-MODIFY-WRITE is not possible. 17. Write command is defined as WE going low. 18. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOD and tOEH met (OE HIGH during WRITE cycle) in order to ensure that the output buffers will be open during the WRITE cycle. The I/Os will provide the previously written data if CAS remains LOW and OE is taken back to LOW after tOEH is met. 19. The I/Os are in open during READ cycles once tOD or tOFF occur. 20. The first χCAS edge to transition LOW. 21. The last χCAS edge to transition HIGH. 22. These parameters are referenced to CAS leading edge in EARLY WRITE cycles and WE leading edge in LATE WRITE or READMODIFY-WRITE cycles. 23. Last falling χCAS edge to first rising χCAS edge. 24. Last rising χCAS edge to next cycle’s last rising χCAS edge. 25. Last rising χCAS edge to first falling χCAS edge. 26. Each χCAS must meet minimum pulse width. 27. Last χCAS to go LOW. 28. I/Os controlled, regardless CAS. 29. The 3 ns minimum is a parameter guaranteed by design. 30. Enables on-chip refresh and address counters. 10 Integrated Circuit Solution Inc. DR027-0A 09/05/2001 I C41C4100 IC41LV4100 READ CYCLE tRC tRAS tRP RAS tCSH tCRP tRCD tRSH tCAS tCLCH tRRH CAS tAR tRAD tASR tRAH tASC tRAL tCAH ADDRESS WE Row tRCS Column tRCH Row tAA tRAC tCAC tCLZ tOFF(1) I/O Open tOE Valid Data tOD Open OE tOES Undefined Don’t Care Note: 1. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last. Integrated Circuit Solution Inc. DR027-0A 09/05/2001 11 I C41C4100 IC41LV4100 EARLY WRITE CYCLE (OE = DON'T CARE) tRC tRAS tRP RAS tCSH tCRP tRCD tRSH tCAS tCLCH CAS tAR tRAD tASR tRAH tASC tRAL tCAH tACH ADDRESS Row Column tCWL tRWL tWCR tWCS tWCH tWP Row WE tDHR tDS tDH I/O Valid Data Don’t Care 12 Integrated Circuit Solution Inc. DR027-0A 09/05/2001 I C41C4100 IC41LV4100 READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles) tRWC tRAS tRP RAS tCSH tCRP tRCD tRSH tCAS tCLCH CAS tAR tRAD tASR tRAH tASC tCAH tACH tRAL ADDRESS Row tRCS Column tRWD tCWD tAWD Row tCWL tRWL tWP WE tAA tRAC tCAC tCLZ tDS tDH I/O Open tOE Valid DOUT tOD Valid DIN Open tOEH OE Undefined Don’t Care Integrated Circuit Solution Inc. DR027-0A 09/05/2001 13 I C41C4100 IC41LV4100 EDO-PAGE-MODE READ CYCLE tRASP tRP RAS tCSH tCRP tRCD tCAS, tCLCH tPC(1) tCAS, tCP tCLCH tCP tRSH tCAS, tCLCH tCP CAS tAR tRAD tASR tASC tCAH tASC tCAH tASC tRAL tCAH ADDRESS Row tRAH tRCS Column Column Column tRCH Row tRRH WE tAA tRAC tCAC tCLZ tCAC tCOH tAA tCPA tCAC tCLZ tAA tCPA tOFF I/O Open tOE tOES Valid Data Valid Data tOEHC tOD tOES Valid Data tOE Open tOD OE tOEP Undefined Don’t Care Note: 1. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both measurements must meet the tPC specifications. 14 Integrated Circuit Solution Inc. DR027-0A 09/05/2001 I C41C4100 IC41LV4100 EDO-PAGE-MODE EARLY-WRITE CYCLE tRASP tRP RAS tCSH tCRP tRCD tCAS, tCLCH tCP tPC tCAS, tCLCH tCP tRSH tCAS, tCLCH tACH tRAL tCAH tCP CAS tAR tRAD tASR tASC tACH tCAH tASC tACH tCAH tASC ADDRESS Row tRAH Column tCWL tWCS tWCH tWP Column tCWL tWCS tWCH tWP Column tCWL tWCS tWCH tWP Row WE tWCR tDHR tDS tDH tDS tDH tDS tDH tRWL I/O OE Valid Data Valid Data Valid Data Don’t Care Integrated Circuit Solution Inc. DR027-0A 09/05/2001 15 I C41C4100 IC41LV4100 EDO-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY WRITE Cycles) tRASP tRP RAS tCSH tCRP tRCD tCAS, tCLCH tCP tPC / tPRWC(1) tCAS, tCLCH tCP tRSH tCAS, tCLCH tCP CAS tASR tRAH tAR tRAD tASC tRAL tCAH tCAH tASC tCAH tASC ADDRESS Row tRWD tRCS Column tCWL tWP tAWD tCWD Column tCWL tWP tAWD tCWD Column tRWL tCWL tWP tAWD tCWD Row WE tAA tRAC tCAC tCLZ tDH tDS tAA tCPA tCAC tCLZ tDH tDS tAA tCPA tCAC tCLZ tDH tDS I/O Open tOE DOUT DIN tOD tOE DOUT DIN tOD tOE DOUT DIN tOD tOEH Open OE Undefined Don’t Care Note: 1. tPC is for LATE write cycles only. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both measurements must meet the tPC specifications. 16 Integrated Circuit Solution Inc. DR027-0A 09/05/2001 I C41C4100 IC41LV4100 EDO-PAGE-MODE READ-EARLY-WRITE CYCLE (Psuedo READ-MODIFY WRITE) tRASP tRP RAS tCSH tPC tCRP tRCD tCAS tCP tCAS tPC tCP tRSH tCAS tCP CAS tASR tRAH tAR tRAD tASC tACH tRAL tCAH tCAH tASC tCAH tASC ADDRESS Row tRCS Column (A) Column (B) tRCH tWCS Column (N) tWCH Row WE tAA tRAC tCAC tCPA tCAC tCOH tAA tWHZ tDS tDH I/O Open tOE Valid Data (A) Valid Data (B) DIN Open OE Don’t Care Integrated Circuit Solution Inc. DR027-0A 09/05/2001 17 I C41C4100 IC41LV4100 AC WAVEFORMS READ CYCLE (With WE-Controlled Disable) RAS tCSH tCRP tRCD tCAS tCP CAS tAR tASR tRAD tRAH tASC tCAH tASC ADDRESS WE Row tRCS Column tRCH tWPZ Column tRCS tAA tRAC tCAC tCLZ tWHZ tCLZ I/O Open tOE Valid Data Open tOD OE Undefined Don’t Care RAS-ONLY REFRESH CYCLE (OE, WE = DON'T CARE) tRC tRAS tRP RAS tCRP tRPC CAS tASR tRAH ADDRESS I/O Row Open Row Don’t Care 18 Integrated Circuit Solution Inc. DR027-0A 09/05/2001 I C41C4100 IC41LV4100 CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE) tRP tRAS tRP tRAS RAS tRPC tCP tCHR tCSR tRPC tCSR tCHR CAS I/O Open HIDDEN REFRESH CYCLE(1) (WE = HIGH; OE = LOW) tRAS tRP tRAS RAS tCRP tRCD tRSH tCHR CAS tAR tASR tRAD tRAH tASC tRAL tCAH ADDRESS Row Column tAA tRAC tCAC tCLZ tOFF(2) I/O Open tOE tORD Valid Data Open tOD OE Undefined Don’t Care Notes: 1. A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH. 2. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last. Integrated Circuit Solution Inc. DR027-0A 09/05/2001 19 I C41C4100 IC41LV4100 ORDERING INFORMATION IC41C4100 Commercial Range: 0°C to 70°C Speed (ns) Order Part No. 35 50 60 IC41C4100-35J IS41C4100-35T IC41C4100-50J IC41C4100-50T IC41C4100-60J IC41C4100-60T PacJage 300mil SOJ 300mil TSOP-2 300mil SOJ 300mil TSOP-2 300mil SOJ 300mil TSOP-2 ORDERING INFORMATION: IC41LV4100 Commercial Range: 0°C to 70°C Speed (ns) Order Part No. 35 50 60 IC41LV4100-35J IC41LV4100-35T IC41LV4100-50J IC41LV4100-50T IC41LV4100-60J IC41LV4100-60T Package 300mil SOJ 300mil TSOP-2 300mil SOJ 300mil TSOP-2 300mil SOJ 300mil TSOP-2 Industrial Range: -40°C to 85°C Speed (ns) Order Part No. 35 50 60 IC41C4100-35JI IC41C4100-35TI IC41C4100-50JI IC41C4100-50TI IC41C4100-60JI IC41C4100-60TI Package 300mil SOJ 300mil TSOP-2 300mil SOJ 300mil TSOP-2 300mil SOJ 300mil TSOP-2 Industrial Range: -40°C to 85°C Speed (ns) Order Part No. 35 50 60 IC41LV4100-35J IC41LV4100-35T IC41LV4100-50JI IC41LV4100-50TI IC41LV4100-60JI IC41LV4100-60TI Package 300mil SOJ 300mil TSOP-2 300mil SOJ 300mil TSOP-2 300mil SOJ 300mil TSOP-2 20 Integrated Circuit Solution Inc. DR027-0A 09/05/2001 I C41C4100 IC41LV4100 Integrated Circuit Solution Inc. HEADQUARTER: NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU, TAIWAN, R.O.C. TEL: 886-3-5780333 Fax: 886-3-5783000 BRANCH OFFICE: 7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD, HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C. TEL: 886-2-26962140 FAX: 886-2-26962252 http://www.icsi.com.tw Integrated Circuit Solution Inc. DR027-0A 09/05/2001 21