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IS62LV12816L-70T

IS62LV12816L-70T

  • 厂商:

    ICSI

  • 封装:

  • 描述:

    IS62LV12816L-70T - 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM - Integrated Circuit Solut...

  • 详情介绍
  • 数据手册
  • 价格&库存
IS62LV12816L-70T 数据手册
IS62LV12816L IS62LV12816LL IS62LV12816L IS62LV12816LL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access times: 55, 70, 100 ns • CMOS low power operation -- 120 mW (typical) operating -- 6 µW (typical) CMOS standby • TTL compatible interface levels • Single 2.7V-3.6V Vcc power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Available in the 44-pin TSOP-2 and 48-pin 6*8mm TF-BGA DESCRIPTION The 1+51 IS62LV12816L and IS62LV12816LL are high-speed, 2.097,152-bit static RAMs organized as 131,072 words by 16 bits. They are fabricated using 1+51's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected) or when CE is low and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using Chip Enable Output and Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62LV12816L and IS62LV12816LL are packaged in the JEDEC standare 44-pin 400mil TSOP-2 and 48-pin 6*8mm TF-BGA. FUNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 128K x 16 MEMORY ARRAY VCC GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT COLUMN I/O CE OE WE UB LB CONTROL CIRCUIT ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc. Integrated Circuit Solution Inc. SR020-0C 1 IS62LV12816L IS62LV12816LL PIN CONFIGURATIONS 44-Pin TSOP-2 A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 Vcc GND I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 48-Pin TF-BGA 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 GND Vcc I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC 1 A B C D E F G H LB I/O8 I/O9 GND Vcc I/O14 I/O15 NC 2 OE UB I/O10 I/O11 I/O12 I/O13 NC A8 3 A0 A3 A5 NC NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 6 N/C I/O0 I/O2 Vcc GND I/O6 I/O7 NC PIN DESCRIPTIONS A0-A16 I/O0-I/O15 CE OE WE Address Inputs Data Input/Output Chip Enable Input Output Enable Input Write Enable Input LB UB NC Vcc GND Lower-byte Control (l/O0-I/O7) Upper-byte Control (l/O8-I/O15) No Connection Power Ground TRUTH TABLE Mode Not Selected WE CE H L L L L L L L L L OE X X H X L L L X X X LB X H X H L H L L H L UB X H X H H L L H L L I/O0/-I/O7 High-Z High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN I/O PIN I/O8-I/O15 High-Z High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN Vcc Current ISB, ISB ISB, ISB ICC ISB ICC X X Output Disabled H X Read H H H Write L L L ICC 2 Integrated Circuit Solution Inc. SR020-0C IS62LV12816L IS62LV12816LL OPERATING RANGE Range Commercial Industrial Ambient Temperature 0°C to +70°C –40°C to +85°C VCC 2.7V - 3.6V 2.7V - 3.6V ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM TBIAS VCC TSTG PT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Vcc related to GND Storage Temperature Power Dissipation Value –0.5 to Vcc + 0.5 –40 to +85 –0.3 to +4.0 –65 to +150 1.0 Unit V °C V °C W Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage Test Conditions VCC = Min., IOH = –1 mA VCC = Min., IOL = 2.1 mA Min. 2.0 — 2.2 –0.2 –1 –1 Max. — 0.4 VCC + 0.2 0.4 1 1 Unit V V V V µA µA GND ≤ VIN ≤ VCC GND ≤ VOUT ≤ VCC, OUTPUTS DISABLED Notes: 1. VIL(min.) = –2.0V for pulse width less than 10 ns. CAPACITANCE(1) Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit pF pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. Integrated Circuit Solution Inc. SR020-0C 3 IS62LV12816L IS62LV12816LL AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0.4V to 2.2V 5 ns 1.3V See Figures 1 and 2 AC TEST LOADS 1 TTL OUTPUT 100 pF Including jig and scope OUTPUT 5 pF Including jig and scope 1 TTL Figure 1 Figure 2 IS62LV12816L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter ICC ISB Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) OR ULB Control ISB CMOS Standby Current (CMOS Inputs) OR ULB Control Test Conditions VCC = Max., IOUT = 0 mA, f = fMAX VCC = Max., VIN = VIH or VIL, CE ≤ VIH, f = 0 Com. Ind. Com. Ind. -55 Min. Max. — — — — 40 45 0.4 1.0 -70 Min. Max. — — — — 30 35 0.4 1.0 -100 Min. Max. — — — — 20 25 0.4 1.0 Unit mA mA VCC = Max., VIN = VIH or VIL CE = VIL, f = 0, UB = VIH, LB = VIH VCC = Max., CE ≥ VCC – 0.2V, VIN ≥ VCC – 0.2V, or VIN ≤ 0.2V, f = 0 Com. Ind. — — 35 50 — — 35 50 — — 35 50 µA VCC = Max., CE = VIL VIN ≤ 0.2V, f = 0, UB / LB = VCC – 0.2V Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 4 Integrated Circuit Solution Inc. SR020-0C IS62LV12816L IS62LV12816LL IS62LV12816LL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter ICC ISB Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) OR ULB Control ISB CMOS Standby Current (CMOS Inputs) OR ULB Control Test Conditions VCC = Max., IOUT = 0 mA, f = fMAX VCC = Max., VIN = VIH or VIL, CE ≥ VIH, f = 0 Com. Ind. Com. Ind. -55 Min. Max. — — — — 40 45 0.4 1.0 -70 Min. Max. — — — — 30 35 0.4 1.0 -100 Min. Max. — — — — 20 25 0.4 1.0 Unit mA mA VCC = Max., VIN = VIH or VIL CE = VIL, f = 0, UB = VIH, LB = VIH VCC = Max., f = 0 CE ≥ VCC – 0.2V, VIN ≥ VCC – 0.2V, or VIN ≤ 0.2V, f = 0 Com. Ind. — — 10 15 — — 10 15 — — 10 15 µA VCC = Max., CE = VIL VIN ≤ 0.2V, f = 0, UB / LB = VCC – 0.2V Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CE Access Time OE Access Time  Min. 55 — 10 — — — 5 0 10 — 0 0 -55 Max. — 55 — 55 30 20 — 20 — 55 25 — Min. 70 — 10 — — — 5 0 10 — 0 0 -70 Max. — 70 — 70 35 25 — 25 — 70 25 — -100 Min. Max. 100 — 15 — — — 5 0 10 — 0 0 — 100 — 100 50 30 — 30 — 100 35 — Unit ns ns ns ns ns ns ns ns ns ns ns ns tRC tAA tOHA tACE tDOE tHZOE tLZOE  OE to High-Z Output OE to Low-Z Output tHZCE  CE to High-Z Output tLZCE  CE to Low-Z Output tBA tHZB tLZB LB, UB Access Time LB, UB o High-Z Output LB. UB to Low-Z Output Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.3V, input pulse levels of 0.4V to 2.2V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. Integrated Circuit Solution Inc. SR020-0C 5 IS62LV12816L IS62LV12816LL AC TEST LOADS READ CYCLE NO.1(1,2) (Address Controlled) (CE = OE = VIL, UB or LB = VIL) tRC ADDRESS tAA tOHA tOHA DATA VALID DOUT PREVIOUS DATA VALID AC WAVEFORMS READ CYCLE NO. 2(1,3) (CS, OE, AND UB/LB Controlled) tRC ADDRESS tAA tOHA OE tDOE tHZOE CE tLZCE tLZOE tACE tHZCE LB, UB tBA tHZB DATA VALID DOUT HIGH-Z tLZB Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE, UB, or LB = VIL. 3. Address is valid prior to or coincident with CE LOW transitions. 6 Integrated Circuit Solution Inc. SR020-0C IS62LV12816L IS62LV12816LL WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range) Symbol Parameter Write Cycle Time CE to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time LB, UB Valid to End of Write WE Pulse Width Data Setup to Write End Data Hold from Write End ! Min. 55 50 50 0 0 45 45 25 0 — 5 -55 Max. — — — — — — — — — 30 — Min. 70 65 65 0 0 60 60 30 0 — 5 -70 Max. — — — — — — — — — 30 — -100 Min. Max 100 80 80 0 0 80 80 40 0 — 5 — — — — — — — — — 40 — Unit ns ns ns ns ns ns ns ns ns ns ns tWC tSCE tAW tHA tSA tPWB tPWE tSD tHD tHZWE WE LOW to High-Z Output tLZWE! WE HIGH to Low-Z Output Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.3V, input pulse levels of 0.4V to 2.2V and output loading specified in Figure 1. 2. The internal write time is defined by the overlap of CE LOW, and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. AC WAVEFORMS WRITE CYCLE NO. 1(1,2) (CS, Controlled, OE = HIGH or LOW) t WC ADDRESS VALID ADDRESS t SA CS t SCS t HA WE t AW t PWE1 t PWE2 t PWB UB, LB t HZWE DOUT DATA UNDEFINED HIGH-Z t LZWE t SD DIN t HD DATAIN VALID Notes: 1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CS and WE inputs and at least one of the LB and UB inputs being in the LOW state. 2. WRITE = (CS) [ (LB) = (UB) ] (WE). Integrated Circuit Solution Inc. SR020-0C 7 IS62LV12816L IS62LV12816LL WRITE CYCLE NO. 2 (WE Controlled; OE is HIGH During Write Cycle) t WC ADDRESS VALID ADDRESS t HA OE CS LOW t AW t PWE1 WE t SA UB, LB t PWB t HZWE DOUT DATA UNDEFINED HIGH-Z t LZWE t SD DIN t HD DATAIN VALID WRITE CYCLE NO. 3 (WE Controlled; OE is LOW During Write Cycle) t WC ADDRESS VALID ADDRESS OE CS LOW t HA LOW t AW t PWE2 WE t SA UB, LB t PWB t HZWE DOUT DATA UNDEFINED HIGH-Z t LZWE t SD DIN t HD DATAIN VALID 8 Integrated Circuit Solution Inc. SR020-0C IS62LV12816L IS62LV12816LL WRITE CYCLE NO. 4 (UB / LB Controlled) t WC ADDRESS ADDRESS 1 t WC ADDRESS 2 OE t SA CS LOW WE t HA t SA t PWB t PWB WORD 2 t HA UB, LB WORD 1 t HZWE DOUT HIGH-Z t LZWE t HD DATAIN VALID DATA UNDEFINED t SD DIN t SD DATAIN VALID t HD DATA RETENTION SWITCHING CHARACTERISTICS (L/LL) Symbol Parameter Vcc for Data Retention Data Retention Current Test Condition See Data Retention Waveform Vcc = 2.0V, CE ≥ Vcc – 0.2V Com. (-L) Com. (-LL) Ind. (-L) Ind. (-LL) Min. 1.5 — — — — 0 Max. 3.6 20 5 25 7 — — Unit V µA µA µA µA ns ns VDR IDR tSDR tRDR Data Retention Setup Time Recovery Time See Data Retention Waveform See Data Retention Waveform (CE Controlled) Data Retention Mode tRC DATA RETENTION WAVEFORM tSDR VCC 2.7V tRDR 2.2V VDR CE ≥ VCC - 0.2V CE GND Integrated Circuit Solution Inc. SR020-0C 9 IS62LV12816L IS62LV12816LL ORDERING INFORMATION Commercial Range: 0°C to +70°C Speed (ns) Order Part No. 55 70 100 IS62LV12816L-55T IS62LV12816L-55B IS62LV12816L-70T IS62LV12816L-70B IS62LV12816L-100T IS62LV12816L-100B Package 400mil TSOP-2 6*8mm TF-BGA 400mil TSOP-2 6*8mm TF-BGA 400mil TSOP-2 6*8mm TF-BGA Industrial Range: -40°C to +85°C Speed (ns) Order Part No. 55 70 100 IS62LV12816L-55TI IS62LV12816L-55BI IS62LV12816L-70TI IS62LV12816L-70BI IS62LV12816L-100TI IS62LV12816L-100BI Package 400mil TSOP-2 6*8mm TF-BGA 400mil TSOP-2 6*8mm TF-BGA 400mil TSOP-2 6*8mm TF-BGA ORDERING INFORMATION Commercial Range: 0°C to +70°C Speed (ns) Order Part No. 55 70 100 IS62LV12816LL-55T IS62LV12816LL-55B IS62LV12816LL-70T IS62LV12816LL-70B IS62LV12816LL-100T IS62LV12816LL-100B Package 400mil TSOP-2 6*8mm TF-BGA 400mil TSOP-2 6*8mm TF-BGA 400mil TSOP-2 6*8mm TF-BGA Industrial Range: -40°C to +85°C Speed (ns) Order Part No. 55 70 100 IS62LV12816LL-55TI IS62LV12816LL-55BI IS62LV12816LL-70TI IS62LV12816LL-70BI IS62LV12816LL-100TI IS62LV12816LL-100BI Package 400mil TSOP-2 6*8mm TF-BGA 400mil TSOP-2 6*8mm TF-BGA 400mil TSOP-2 6*8mm TF-BGA HEADQUARTER: NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU, TAIWAN, R.O.C. TEL: 886-3-5780333 Fax: 886-3-5783000 Integrated Circuit Solution Inc. BRANCH OFFICE: 7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD, HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C. TEL: 886-2-26962140 FAX: 886-2-26962252 http://www.icsi.com.tw 10 Integrated Circuit Solution Inc. SR020-0C
IS62LV12816L-70T
### 物料型号 - IS62LV12816L - IS62LV12816LL

### 器件简介 IS62LV12816L和IS62LV12816LL是高速、2.097,152位静态RAM,以131,072字×16位组织。它们使用ICSI高性能CMOS技术制造。这种高可靠性工艺加上创新的电路设计技术,实现了高性能和低功耗的设备。

### 引脚分配 - 44-Pin TSOP-2和48-Pin TF-BGA封装。 - 引脚包括地址输入(A0-A16)、数据输入输出(I/O0-I/O15)、芯片使能输入(CE)、输出使能输入(OE)、写使能输入(WE)、低字节控制(LB)、高字节控制(UB)、无连接(NC)、电源(Vcc)和地(GND)。

### 参数特性 - 高速访问时间:55ns、70ns、100ns。 - CMOS低功耗操作:工作时120mW(典型值),待机时6μW(典型值)。 - TTL兼容接口电平。 - 单2.7V-3.6V Vcc电源供电。 - 全静态操作:无需时钟或刷新。 - 三态输出。 - 数据控制上字节和下字节。 - 工业温度范围可用。 - 44引脚TSOP-2和48引脚68mm TF-BGA封装。

### 功能详解 当CE为高电平(未选中)或CE为低电平且LB和UB均为高电平时,设备进入待机模式,可以通过使用CMOS输入电平降低功耗。通过使用芯片使能输出和使能输入(CE和OE),提供轻松的内存扩展。活动低写使能(WE)控制内存的读写。数据字节允许上字节(UB)和下字节(LB)访问。

### 应用信息 这些器件适用于需要高速和低功耗静态RAM的应用,例如工业控制系统、通信设备和计算机内存扩展。

### 封装信息 - IS62LV12816L和IS62LV12816LL封装在JEDEC标准的44引脚400mil TSOP-2和48引脚68mm TF-BGA中。
IS62LV12816L-70T 价格&库存

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