IDT71V2546S/XS
128K x 36, 256K x 18
3.3V Synchronous ZBT™ SRAMs IDT71V2548S/XS
IDT71V2546SA/XSA
2.5V I/O, Burst Counter
IDT71V2548SA/XSA
Pipelined Outputs
Features
◆
◆
◆
◆
◆
◆
◆
◆
◆
◆
◆
◆
Address and control signals are applied to the SRAM during one clock
cycle, and two cycles later the associated data cycle occurs, be it read
or write.
The IDT71V2546/48 contain data I/O, address and control signal
registers. Output enable is the only asynchronous signal and can be used
to disable the outputs at any given time.
A Clock Enable (CEN) pin allows operation of the IDT71V2546/48 to
be suspended as long as necessary. All synchronous inputs are ignored
when (CEN) is high and the internal device registers will hold their previous
values.
There are three chip enable pins (CE1, CE2, CE2) that allow the user
to deselect the device when desired. If any one of these three are not
asserted when ADV/LD is low, no new memory operation can be initiated.
However, any pending data transfers (reads or writes) will be completed.
The data bus will tri-state two cycles after chip is deselected or a write is
initiated.
The IDT71V2546/48 has an on-chip burst counter. In the burst mode,
the IDT71V2546/48 can provide four cycles of data for a single address
presented to the SRAM. The order of the burst sequence is defined by the
LBO input pin. The LBO pin selects between linear and interleaved burst
sequence. The ADV/LD signal is used to load a new external address
(ADV/LD = LOW) or increment the internal burst counter (ADV/LD =
HIGH).
The IDT71V2546/48 SRAMs utilize IDT's latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and 165 fine pitch ball grid array (fBGA).
128K x 36, 256K x 18 memory configurations
Supports high performance system speed - 150 MHz
(3.8 ns Clock-to-Data Access)
ZBTTM Feature - No dead cycles between write and read
cycles
Internally synchronized output buffer enable eliminates the
need to control OE
W (READ/WRITE) control pin
Single R/W
Positive clock-edge triggered address, data, and control
signal registers for fully pipelined applications
4-word burst capability (interleaved or linear)
Individual byte write (BW1 - BW4) control (May tie active)
Three chip enables for simple depth expansion
3.3V power supply (±5%), 2.5V I/O Supply (VDDQ)
Optional Boundary Scan JTAG Interface (IEEE1149.1
complaint)
Packaged in a JEDEC standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine
pitch ball grid array
Description
The IDT71V2546/48 are 3.3V high-speed 4,718,592-bit (4.5 Megabit) synchronous SRAMS. They are designed to eliminate dead bus cycles
when turning the bus around between reads and writes, or writes and
reads. Thus, they have been given the name ZBTTM, or Zero Bus
Turnaround.
Pin Description Summary
A0-A17
Ad d re ss Inp uts
Inp ut
Synchro no us
CE1, CE2, CE2
Chip Enab le s
Inp ut
Synchro no us
OE
Outp ut Enab le
Inp ut
Asynchro no us
R/W
Re ad /Write Sig nal
Inp ut
Synchro no us
CEN
Clo ck Enab le
Inp ut
Synchro no us
BW1, BW2, BW3, BW4
Ind ivid ual Byte Write Se le cts
Inp ut
Synchro no us
CLK
Clo ck
Inp ut
N/A
ADV/LD
Ad vance b urst ad d re ss / Lo ad ne w ad d re ss
Inp ut
Synchro no us
L BO
Line ar / Inte rle ave d Burst Ord e r
Inp ut
Static
TMS
Te st Mo d e Se le ct
Inp ut
Synchro no us
TDI
Te st Data Inp ut
Inp ut
Synchro no us
TCK
Te st Clo ck
TDO
Te st Data Outp ut
Inp ut
N/A
Outp ut
Synchro no us
TRST
JTAG Re se t (Op tio nal)
Inp ut
Asynchro no us
ZZ
S le e p Mo d e
Inp ut
Synchro no us
I/O0-I/O31, I/OP1-I/OP4
Data Inp ut / Outp ut
I/O
Synchro no us
VDD, VDDQ
Co re Po we r, I/O Po we r
Sup p ly
Static
VSS
Gro und
Sup p ly
Static
5294 tb l 01
1
©2010 Integrated Device Technology, Inc.
MAY 2010
DSC-5294/06
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Pin Definitions(1)
Symbol
Pin Function
I/O
Active
A0-A17
Ad d re ss Inp uts
I
N/A
Synchro no us Ad d re ss inp uts. The ad d re ss re g iste r is trig g e re d b y a co mb inatio n o f the rising e d g e o f CLK,
ADV/LD lo w, CEN lo w, and true chip e nab le s.
Description
ADV/LD
Ad vance / Lo ad
I
N/A
ADV/LD is a synchro no us inp ut that is use d to lo ad the inte rnal re g iste rs with ne w ad d re ss and co ntro l whe n it
is samp le d lo w at the rising e d g e o f clo ck with the chip se le cte d . Whe n ADV/LD is lo w with the chip
d e se le cte d , any b urst in p ro g re ss is te rminate d . Whe n ADV/LD is samp le d hig h the n the inte rnal b urst co unte r
is ad vance d fo r any b urst that was in p ro g re ss. The e xte rnal ad d re sse s are ig no re d whe n ADV/LD is samp le d
hig h.
R/W
Re ad / Write
I
N/A
R/W sig nal is a synchro no us inp ut that id e ntifie s whe the r the curre nt lo ad cycle initiate d is a Re ad o r Write
acce ss to the me mo ry array. The d ata b us activity fo r the curre nt cycle take s p lace two clo ck cycle s late r.
CEN
Clo ck Enab le
I
LOW
Synchro no us Clo ck Enab le Inp ut. Whe n CEN is samp le d hig h, all o the r synchro no us inp uts, includ ing clo ck
are ig no re d and o utp uts re main unchang e d . The e ffe ct o f CEN samp le d hig h o n the d e vice o utp uts is as if the
lo w to hig h clo ck transitio n d id no t o ccur. Fo r no rmal o p e ratio n, CEN must b e samp le d lo w at rising e d g e o f
c lo c k .
BW1-BW4
Ind ivid ual Byte
Write Enab le s
I
LOW
Synchro no us b yte write e nab le s. Each 9-b it b yte has its o wn active lo w b yte write e nab le . On lo ad write cycle s
(Whe n R/W and ADV/LD are samp le d lo w) the ap p ro p riate b yte write sig nal (BW1-BW4) must b e valid . The
b yte write sig nal must also b e valid o n e ach cycle o f a b urst write . Byte Write sig nals are ig no re d whe n R/W is
samp le d hig h. The ap p ro p riate b yte (s) o f d ata are writte n into the d e vice two cycle s late r. BW1-BW4 can all b e
tie d lo w if always d o ing write to the e ntire 36-b it wo rd .
CE1, CE2
Chip Enab le s
I
LOW
Synchro no us active lo w chip e nab le . CE1 and CE2 are use d with CE2 to e nab le the IDT71V2546/48. (CE1 o r
CE2 samp le d hig h o r CE2 samp le d lo w) and ADV/LD lo w at the rising e d g e o f clo ck, initiate s a d e se le ct cycle .
The ZBTTM has a two cycle d e se le ct, i.e ., the d ata b us will tri-state two clo ck cycle s afte r d e se le ct is initiate d .
CE2
Chip Enab le
I
HIGH
Synchro no us active hig h chip e nab le . CE2 is use d with CE1 and CE2 to e nab le the chip . CE2 has inve rte d
p o larity b ut o the rwise id e ntical to CE1 and CE2.
CLK
Clo ck
I
N/A
This is the clo ck inp ut to the IDT71V2546/48. Exce p t fo r OE, all timing re fe re nce s fo r the d e vice are mad e with
re sp e ct to the rising e d g e o f CLK.
I/O0-I/O31
I/OP1-I/OP4
Data Inp ut/Outp ut
I/O
N/A
Synchro no us d ata inp ut/o utp ut (I/O) p ins. Bo th the d ata inp ut p ath and d ata o utp ut p ath are re g iste re d and
trig g e re d b y the rising e d g e o f CLK.
LBO
Line ar Burst Ord e r
I
LOW
Burst o rd e r se le ctio n inp ut. Whe n LBO is hig h the Inte rle ave d b urst se q ue nce is se le cte d . Whe n LBO is lo w
the Line ar b urst se q ue nce is se le cte d . LBO is a static inp ut and it must no t chang e d uring d e vice o p e ratio n.
OE
Outp ut Enab le
I
LOW
Asynchro no us o utp ut e nab le . OE must b e lo w to re ad d ata fro m the 71V2546/48. Whe n OE is hig h the I/O p ins
are in a hig h-imp e d ance state . OE d o e s no t ne e d to b e active ly co ntro lle d fo r re ad and write cycle s. In no rmal
o p e ratio n, OE can b e tie d lo w.
TMS
Te st Mo d e Se le ct
I
N/A
Give s inp ut co mmand fo r TAP co ntro lle r. Samp le d o n rising e d g e o f TDK. This p in has an inte rnal p ullup .
TDI
Te st Data Inp ut
I
N/A
Se rial inp ut o f re g iste rs p lace d b e twe e n TDI and TDO. Samp le d o n rising e d g e o f TCK. This p in has an
inte rnal p ullup .
TCK
Te st Clo ck
I
N/A
Clo ck inp ut o f TAP co ntro lle r. Each TAP e ve nt is clo cke d . Te st inp uts are cap ture d o n rising e d g e o f TCK,
while te st o utp uts are d rive n fro m the falling e d g e o f TCK. This p in has an inte rnal p ullup .
TDO
Te st Data Outp ut
O
N/A
Se rial o utp ut o f re g iste rs p lace d b e twe e n TDI and TDO. This o utp ut is active d e p e nd ing o n the state o f the
TAP co ntro lle r.
TRST
JTAG Re se t
(Op tio nal)
I
LOW
Op tio nal Asynchro no us JTAG re se t. Can b e use d to re se t the TAP co ntro lle r, b ut no t re q uire d . JTAG re se t
o ccurs auto matically at p o we r up and also re se ts using TMS and TCK p e r IEEE 1149.1. If no t use d TRST can
b e le ft flo ating . This p in has an inte rnal p ullup .
ZZ
S le e p Mo d e
I
HIGH
Synchro no us sle e p mo d e inp ut. ZZ HIGH will g ate the CLK inte rnally and p o we r d o wn the IDT71V2546/2548 to
its lo we st p o we r co nsump tio n le ve l. Data re te ntio n is g uarante e d in Sle e p Mo d e . This p in has an inte rnal
p ulld o wn.
VDD
Po we r Sup p ly
N/A
N/A
3.3V co re p o we r sup p ly.
VDDQ
Po we r Sup p ly
N/A
N/A
2.5V I/O Sup p ly.
VSS
Gro und
N/A
N/A
Gro und .
5294 tb l 02
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
6.42
2
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Functional Block Diagram
LBO
Address A [0:16]
128Kx36 BIT
MEMORY ARRAY
D
Q
Address
D
Q
Control
CE1, CE2, CE2
R/W
Input Register
CEN
ADV/LD
BWx
D
DI
Q
DO
Control Logic
Clk
Mux
Sel
D
Clk
Clock
Output Register
Q
Gate
OE
5294 drw 01a
TMS
TDI
TCK
TRST
JTAG
(SA Version)
TDO
(optional)
6.42
3
Data I/O [0:31],
I/O P[1:4]
,
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Functional Block Diagram
LBO
256x18 BIT
MEMORY ARRAY
Address A [0:17]
D
Q
Address
D
Q
Control
CE1, CE2, CE2
R/W
Input Register
CEN
ADV/LD
BWx
DI
D
DO
Control Logic
Q
Clk
Mux
Sel
D
Clk
Clock
Output Register
Q
Gate
OE
5294 drw 01b
Data I/O [0:15],
I/O P[1:2]
TMS
TDI
TCK
TRST
JTAG
(SA Version)
TDO
(optional)
Recommended DC Operating
Conditions
Symbol
Parameter
M i n.
Typ.
Max.
Unit
VDD
Co re Sup p ly Vo ltag e
3.135
3.3
3.465
V
VDDQ
I/O Sup p ly Vo ltag e
2.375
2.5
2.625
V
VSS
Sup p ly Vo ltag e
0
0
0
V
1.7
____
VDD +0.3
1.7
____
VIH
VIH
VIL
Inp ut Hig h Vo ltag e - Inp uts
Inp ut Hig h Vo ltag e - I/O
Inp ut Lo w Vo ltag e
(1)
-0.3
____
(2)
VDDQ +0.3
0.7
V
V
V
5294 tb l 03
NOTES:
1. VIL (min.) = –1.0V for pulse width less than tCYC/2, once per cycle.
2. VIH (max.) = +6.0V for pulse width less than tCYC/2, once per cycle.
6.42
4
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage
Grade
Temperature(1)
VSS
VDD
VDDQ
Co mme rcial
0° C to +70° C
0V
3.3V± 5%
2.5V± 5%
Ind ustrial
-40° C to +85° C
0V
3.3V± 5%
2.5V± 5%
5294 tb l 05
NOTE:
1. TA is the "instant on" case temperature.
CE2
BW4
BW3
BW2
BW1
CE2
VDD
VSS
CLK
R/W
CEN
OE
ADV/LD
NC(2)
NC(2)
A8
A9
A6
A7
CE1
Pin Configuration — 128K x 36
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
I/OP3
I/O16
I/O17
VDDQ
VSS
I/O18
I/O19
I/O20
I/O21
VSS
VDDQ
I/O22
I/O23
VDD(1)
VDD
VDD(1)
VSS
I/O24
I/O25
VDDQ
VSS
I/O26
I/O27
I/O28
I/O29
VSS
VDDQ
I/O30
I/O31
I/OP4
1
80
2
79
3
78
4
77
5
6
76
75
7
74
8
73
9
72
71
10
11
70
12
69
13
68
14
67
15
66
16
65
64
17
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
53
28
29
52
51
30
I/OP2
I/O15
I/O14
VDDQ
VSS
I/O13
I/O12
I/O11
I/O10
VSS
VDDQ
I/O9
I/O8
VSS
VDD(1)
VDD
VSS/ZZ(3)
I/O7
I/O6
VDDQ
VSS
I/O5
I/O4
I/O3
I/O2
VSS
VDDQ
I/O1
I/O0
I/OP1
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
,
LBO
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
NC
NC
A10
A11
A12
A13
A14
A15
A16
5294 drw 02
Top View
100 TQFP
NOTES:
1. Pins 14, 16 and 66 do not have to be connected directly to VDD as long as the input voltage is ≥ VIH.
2. Pins 83 and 84 are reserved for future 8M and 16M respectively.
3. Pin 64 does not have to be connected directly to VSS as long as the input voltage is ≤ VIL; on the latest die revision this
pin supports ZZ (sleep mode).
6.42
5
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings(1)
CE2
NC
NC
BW2
BW1
CE2
VDD
VSS
CLK
R/W
CEN
OE
ADV/LD
NC(2)
NC(2)
A8
A9
A6
A7
CE1
Pin Configuration — 256K x 18
Symbol
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
NC
NC
NC
1
80
2
79
3
VDDQ
VSS
NC
NC
I/O8
I/O9
VSS
VDDQ
I/O10
I/O11
VDD(1)
VDD
VDD(1)
VSS
I/O12
I/O13
VDDQ
VSS
I/O14
I/O15
I/OP2
NC
VSS
VDDQ
NC
NC
NC
4
78
77
5
6
76
75
7
74
8
73
9
10
72
71
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
19
63
62
20
61
21
60
22
59
23
24
58
57
25
56
26
55
27
54
53
28
29
A10
NC
NC
VDDQ
VSS
NC
I/OP1
I/O7
I/O6
VSS
VDDQ
I/O5
I/O4
VSS
VDD(1)
VDD
VSS/ZZ(3)
I/O3
I/O2
VDDQ
VSS
I/O1
I/O0
NC
NC
VSS
VDDQ
NC
NC
NC
52
51
30
Commercial &
Industrial Values
Unit
VTERM(2)
Te rminal Vo ltag e with
Re sp e ct to GND
-0.5 to +4.6
V
VTERM(3,6)
Te rminal Vo ltag e with
Re sp e ct to GND
-0.5 to VDD
V
VTERM(4,6)
Te rminal Vo ltag e with
Re sp e ct to GND
-0.5 to VDD +0.5
V
VTERM(5,6)
Te rminal Vo ltag e with
Re sp e ct to GND
-0.5 to VDDQ +0.5
V
TA
Commercial
Op e rating Te mp e rature
-0 to +70
o
C
Industrial
Op e rating Te mp e rature
-40 to +85
o
C
(7)
TBIAS
Te mp e rature
Und e r Bias
-55 to +125
o
C
TSTG
Sto rag e
Te mp e rature
-55 to +125
o
C
,PT
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Rating
IOUT
Po we r Dissip atio n
2.0
W
DC Outp ut Curre nt
50
mA
LBO
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
NC
NC
A11
A12
A13
A14
A15
A16
A17
5294 drw 02a
5294 tb l 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any input or I/O pin cannot exceed VDDQ during power
supply ramp up.
7. TA is the "instant on" case temperature.
Top View
100 TQFP
NOTES:
1. Pins 14, 16 and 66 do not have to be connected directly to VDD as long
as the input voltage is ≥ VIH.
2. Pins 83 and 84 are reserved for future 8M and 16M respectively.
3. Pin 64 does not have to be connected directly to VSS as long as the input
voltage is ≤ VIL; on the latest die revision this pin supports ZZ (sleep
mode).
100 TQFP Capacitance(1)
(TA = +25° C, f = 1.0MHz)
S ym bol
V TE RM(2)
Com m erci al &
I ndustri al Val ues
Rati ng
T
e rmi nal
Re s p e c t
Vo l tag e
to
GND
wi th
(3, 6)
T
e rmi nal
Re s p e c t
Vo l tag e
to
GND
wi th
V TE RM(4, 6)
T
e rmi nal
Re s p e c t
Vo l tag e
to
GND
wi th
V TE RM(5, 6)
T
e rmi nal
Re s p e c t
Vo l tag e
to
GND
wi th
V TE RM
Com m erci al
Op e rati ng
T
e mp e rature
-0. 5
to
-0. 5
-0. 5
-0. 5
to
to
V
V DD
V
V DD
V DDQ
+ 0. 5
+ 0. 5
o
C
+ 85
o
C
T
e mp e rature
Und e r B i as
-55
to
+ 125
o
C
TS TG
S to rag e
T
e mp e rature
-55
to
+ 125
o
C
to
+ 70
(TA = +25° C, f = 1.0MHz)
V
V
TB IA S
-0
119 BGA Capacitance(1)
Uni t
+ 4. 6
to
Symbol
TA (7)
I ndustri al
Op e rati ng
PT
P o we r
IOUT
DC
T
e mp e rature
-40
Di s s i p ati o n
Outp ut
to
2. 0
Curre nt
W
50
tb l
Inp ut Cap acitance
CI/O
I/O Cap acitance
CI/O
I/O Cap acitance
Unit
VIN = 3d V
7
pF
VOUT = 3d V
7
pF
5294 tb l 07a
(TA = +25° C, f = 1.0MHz)
CIN
Inp ut Cap acitance
Max.
06
165 fBGA Capacitance(1)
Parameter(1)
CIN
Conditions
mA
5294
Symbol
Parameter(1)
Conditions
Max.
Unit
VIN = 3d V
TBD
pF
VOUT = 3d V
TBD
pF
5294 tb l 07b
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
6.42
6
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Pin Configuration — 128K x 36, 119 BGA
1
2
3
4
5
6
7
A
VDDQ
A6
A4
NC(2)
A8
A16
VDDQ
B
NC
CE 2
A3
ADV/LD
A9
CE2
NC
C
NC
A7
A2
VDD
A12
A15
NC
D
I/O16
I/OP3
VSS
NC
VSS
I/OP2
I/O15
E
I/O17
I/O18
VSS
CE1
VSS
I/O13
I/O14
F
VDDQ
I/O19
VSS
OE
VSS
I/O12
VDDQ
G
I/O20
I/O21
BW3
NC(2)
BW 2
I/O11
I/O10
H
I/O22
I/O23
VSS
R/W
VSS
I/O9
I/O8
J
VDDQ
VDD
VDD(1)
VDD
VDD(1)
VDD
VDDQ
K
I/O24
I/O26
VSS
CLK
VSS
I/O6
I/O7
L
I/O25
I/O27
BW4
NC
BW1
I/O4
I/O5
M
VDDQ
I/O28
VSS
CEN
VSS
I/O3
VDDQ
N
I/O29
I/O30
VSS
A1
VSS
I/O2
I/O1
P
I/O31
I/OP4
VSS
A0
VSS
I/OP1
I/O0
R
NC
A5
LBO
VDD
A13
NC
T
NC
NC
A10
A11
NC
NC/ZZ(5)
U
VDDQ
VDD(1)
A14
,
NC/TMS(3) NC/TDI(3) NC/TCK(3) NC/TDO(3) NC/TRST(3,4) VDDQ
Top View
5294 drw 13a
Pin Configuration — 256K x 18, 119 BGA
1
2
3
4
5
6
7
A
VDDQ
A6
A4
NC(2)
A8
A16
VDDQ
B
NC
CE2
A3
ADV/LD
A9
CE2
NC
C
NC
A7
A2
A13
A17
NC
D
I/O8
NC
VSS
NC
VSS
I/OP1
NC
E
NC
I/O9
VSS
CE1
VSS
NC
I/O7
F
VDDQ
NC
VSS
OE
VSS
I/O6
VDDQ
VDD
G
NC
I/O10
NC(2)
VSS
NC
I/O5
H
I/O11
NC
VSS
R/W
VSS
I/O4
NC
J
VDDQ
VDD
VDD(1)
VDD
VDD(1)
VDD
VDDQ
K
NC
I/O12
VSS
CLK
VSS
NC
I/O3
L
I/O13
NC
VSS
NC
BW1
I/O2
NC
M
VDDQ
I/O14
VSS
CEN
VSS
NC
VDDQ
N
I/O15
NC
VSS
A1
VSS
I/O1
NC
P
NC
I/OP2
VSS
A0
VSS
NC
I/O0
R
NC
A5
LBO
VDD
VDD(1)
A12
NC
T
NC
A10
A15
NC
A14
A11
NC/ZZ(5)
U
VDDQ
BW2
NC/TMS(3) NC/TDI(3)
NC/TCK(3) NC/TDO(3) NC/TRST(3,4) VDDQ
Top View
5294 drw 13b
NOTES:
1. J3, J5, and R5 do not have to be directly connected to VDD as long as the input voltage is ≥ VIH.
2. G4 and A4 are reserved for future 8M and 16M respectively.
3. These pins are NC for the "S" version or the JTAG signal listed for the "SA" version.
4. TRST is offered as an optional JTAG reset if required in the application. If not needed, can be left floating and will internally be pulled to VDD.
5. Pin T7 supports ZZ (sleep mode) on the latest die revision.
6.42
7
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Pin Configuration - 128K x 36, 165 fBGA
A
1
2
3
4
5
6
7
8
9
10
11
NC(2)
A7
CE1
BW3
BW2
CE2
CEN
ADV/LD
NC(2)
A8
NC
(2)
B
NC
A6
CE2
BW4
BW1
CLK
R/W
OE
NC
A9
NC(2)
C
I/OP3
NC
VDDQ
VSS
VSS
VSS
VSS
VSS
VDDQ
NC
I/OP2
D
I/O17
I/O16
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O15
I/O14
E
I/O19
I/O18
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O13
I/O12
F
I/O21
I/O20
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O11
I/O10
G
I/O23
I/O22
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O9
I/O8
H
(1)
VDD
(1)
VDD
NC
VDD
VSS
VSS
VSS
VDD
NC
NC
NC/ZZ(5)
J
I/O25
I/O24
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O7
I/O6
K
I/O27
I/O26
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O5
I/O4
L
I/O29
I/O28
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O3
I/O2
M
I/O31
I/O30
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O1
I/O0
N
I/OP4
NC
VDDQ
VSS
NC/TRST(3,4)
NC
VDD(1)
VSS
VDDQ
NC
I/OP1
P
NC
NC(2)
A5
A2
NC/TDI(3)
A1
NC/TDO(3)
A10
A13
A14
NC
R
LBO
(2)
A0
(3)
A11
A12
A15
A16
NC
A4
A3
NC/TMS
(3)
NC/TCK
5294 tb l 25
Pin Configuration - 256K x 18, 165 fBGA
1
2
3
4
5
6
7
8
9
10
11
A
NC(2)
A7
CE1
BW2
NC
CE2
CEN
ADV/LD
NC(2)
A8
A10
B
NC
A6
CE2
NC
BW1
CLK
R/W
OE
NC(2)
A9
NC(2)
C
NC
NC
VDDQ
VSS
VSS
VSS
VSS
VSS
VDDQ
NC
I/OP1
D
NC
I/O8
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
I/O7
E
NC
I/O9
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
I/O6
F
NC
I/O10
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
I/O5
G
NC
I/O11
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
I/O4
H
VDD(1)
VDD(1)
NC
VDD
VSS
VSS
VSS
VDD
NC
NC
NC/ZZ(5)
J
I/O12
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O3
NC
K
I/O13
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O2
NC
L
I/O14
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O1
NC
M
I/O15
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O0
NC
N
I/OP2
NC
(2)
VDDQ
VSS
NC/TRST
(3,4)
(3)
NC
(1)
VDD
VSS
VDDQ
NC
NC
(3)
P
NC
NC
A5
A2
NC/TDI
A1
NC/TDO
A11
A14
A15
NC
R
LBO
NC(2)
A4
A3
NC/TMS(3)
A0
NC/TCK(3)
A12
A13
A16
A17
5294 tb l 25a
NOTES:
1. H1, H2, and N7 do not have to be directly connected to VDD as long as the input voltage is ≥ VIH.
2. A9, B9, B11, A1, R2 and P2 are reserved for future 9M, 18M, 36M, 72M, 144M and 288M respectively.
3. These pins are NC for the "S" version or the JTAG signal listed for the "SA" version.
4. TRST is offered as an optional JTAG reset if required in the application. If not needed, can be left floating and will internally be pulled to VDD.
5. Pin H11 supports ZZ (sleep mode) on the latest die revision.
6.42
8
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Synchronous Truth Table(1)
CEN
R/W
Chip(5)
Enable
ADV/LD
BWx
ADDRESS
USED
PREVIOUS CYCLE
CURRENT CYCLE
I/O
(2 cycles later)
L
L
S e le c t
L
Valid
Exte rnal
X
LOAD WRITE
D(7)
L
H
S e le c t
L
X
Exte rnal
X
LOAD READ
Q(7)
L
X
X
H
Valid
Inte rnal
LOAD WRITE /
BURST WRITE
BURST WRITE
(Ad vance b urst co unte r)(2)
D(7)
L
X
X
H
X
Inte rnal
LOAD READ /
BURST READ
BURST READ
(Ad vance b urst co unte r)(2)
Q(7)
L
X
De se le ct
L
X
X
X
DESELECT o r STOP(3)
HiZ
L
X
X
H
X
X
DESELECT / NOOP
NOOP
HiZ
H
X
X
X
X
X
X
SUSPEND(4)
Pre vio us Value
5294 tb l 08
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. When ADV/LD signal is sampled high, the internal burst counter is incremented. The R/W signal is ignored when the counter is advanced. Therefore the nature of
the burst cycle (Read or Write) is determined by the status of the R/W signal when the first address is loaded at the beginning of the burst cycle.
3. Deselect cycle is initiated when either (CE1, or CE2 is sampled high or CE2 is sampled low) and ADV/LD is sampled low at rising edge of clock. The data bus will
tri-state two cycles after deselect is initiated.
4. When CEN is sampled high at the rising edge of clock, that clock edge is blocked from propogating through the part. The state of all the internal registers and the I/
Os remains unchanged.
5. To select the chip requires CE1 = L, CE2 = L, CE2 = H on these chip enables. Chip is deselected if any one of the chip enables is false.
6. Device Outputs are ensured to be in High-Z after the first rising edge of clock upon power-up.
7. Q - Data read from the device, D - data written to the device.
Partial Truth Table for Writes(1)
R/W
BW 1
BW2
BW3(3)
BW4(3)
READ
H
X
X
X
X
WRITE ALL BYTES
L
L
L
L
L
L
L
H
H
H
OPERATION
WRITE BYTE 1 (I/O[0:7], I/OP1)(2)
(2)
WRITE BYTE 2 (I/O[8:15], I/OP2)
L
H
L
H
H
(2,3)
WRITE BYTE 3 (I/O[16:23], I/OP3)
L
H
H
L
H
WRITE BYTE 4 (I/O[24:31], I/OP4)(2,3)
L
H
H
H
L
NO WRITE
L
H
H
H
H
5294 tb l 09
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. Multiple bytes may be selected during the same cycle.
3. N/A for X18 configuration.
6.42
9
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Interleaved Burst Sequence Table (LBO=VDD)
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Ad d re ss
0
0
0
1
1
0
1
1
Se co nd Ad d re ss
0
1
0
0
1
1
1
0
Third Ad d re ss
1
0
1
1
0
0
0
1
Fo urth Ad d re ss(1)
1
1
1
0
0
1
0
0
5294 tb l 10
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state and continues counting.
Linear Burst Sequence Table (LBO=VSS)
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Ad d re ss
0
0
0
1
1
0
1
1
Se co nd Ad d re ss
0
1
1
0
1
1
0
0
Third Ad d re ss
1
0
1
1
0
0
0
1
Fo urth Ad d re ss(1)
1
1
0
0
0
1
1
0
5294 tb l 11
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state and continues counting.
Functional Timing Diagram(1)
CYCLE
n+29
n+30
n+31
n+32
n+33
n+34
n+35
n+36
n+37
A29
A30
A31
A32
A33
A34
A35
A36
A37
C29
C30
C31
C32
C33
C34
C35
C36
C37
D/Q27
D/Q28
D/Q29
D/Q30
D/Q31
D/Q32
D/Q33
D/Q34
D/Q35
CLOCK
(2)
ADDRESS
(A0 - A16)
(2)
CONTROL
(R/W, ADV/LD, BWx)
(2)
DATA
I/O [0:31], I/O P[1:4]
,
5294 drw 03
NOTES:
1. This assumes CEN, CE1, CE2, CE2 are all true.
2. All Address, Control and Data_In are only required to meet set-up and hold time with respect to the rising edge of clock. Data_Out is valid after a clock-to-data
delay from the rising edge of clock.
6.42
10
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Device Operation - Showint Mixed Load, Burst,
Deselect and NOOP Cycles(2)
Cycle
Address
R/W
ADV/LD
CE(1)
CEN
BWx
OE
I/O
Comments
n
A0
H
L
L
L
X
X
X
Lo ad re ad
n+1
X
X
H
X
L
X
X
X
Burst re ad
n+2
A1
H
L
L
L
X
L
Q0
Lo ad re ad
n+3
X
X
L
H
L
X
L
Q0+1
n+4
X
X
H
X
L
X
L
Q1
NOOP
n+5
A2
H
L
L
L
X
X
Z
Lo ad re ad
n+6
X
X
H
X
L
X
X
Z
Burst re ad
n+7
X
X
L
H
L
X
L
Q2
De se le ct o r STOP
n+8
A3
L
L
L
L
L
L
Q2+1
Lo ad write
n+9
X
X
H
X
L
L
X
Z
Burst write
n+10
A4
L
L
L
L
L
X
D3
Lo ad write
n+11
X
X
L
H
L
X
X
D3+1
n+12
X
X
H
X
L
X
X
D4
NOOP
n+13
A5
L
L
L
L
L
X
Z
Lo ad write
n+14
A6
H
L
L
L
X
X
Z
Lo ad re ad
n+15
A7
L
L
L
L
L
X
D5
Lo ad write
n+16
X
X
H
X
L
L
L
Q6
Burst write
n+17
A8
H
L
L
L
X
X
D7
Lo ad re ad
n+18
X
X
H
X
L
X
X
D7+1
Burst re ad
n+19
A9
L
L
L
L
L
L
Q8
Lo ad write
De se le ct o r STOP
De se le ct o r STOP
5294 tb l 12
NOTES:
1. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
2. H = High; L = Low; X = Don’t Care; Z = High Impedance.
Read Operation(1)
Cycle
Address
R/W
ADV/LD
CE(2)
CEN
BWx
OE
I/O
Comments
n
A0
H
L
L
L
X
X
X
Ad d re ss and Co ntro l me e t se tup
n+1
X
X
X
X
L
X
X
X
Clo ck Se tup Valid
n+2
X
X
X
X
X
X
L
Q0
Co nte nts o f Ad d re ss A0 Re ad Out
5294 tb l 13
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42
11
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Burst Read Operation(1)
Cycle
Address
R/W
ADV/LD
CE(2)
CEN
BWx
OE
I/O
Comments
n
A0
H
L
L
L
X
X
X
Ad d re ss and Co ntro l me e t se tup
n+1
X
X
H
X
L
X
X
X
Clo ck Se tup Valid , Ad vance Co unte r
n+2
X
X
H
X
L
X
L
Q0
Ad d re ss A0 Re ad Out, Inc. Co unt
n+3
X
X
H
X
L
X
L
Q0+1
Ad d re ss A0+1 Re ad Out, Inc. Co unt
n+4
X
X
H
X
L
X
L
Q0+2
Ad d re ss A0+2 Re ad Out, Inc. Co unt
n+5
A1
H
L
L
L
X
L
Q0+3
Ad d re ss A0+3 Re ad Out, Lo ad A1
n+6
X
X
H
X
L
X
L
Q0
Ad d re ss A0 Re ad Out, Inc. Co unt
n+7
X
X
H
X
L
X
L
Q1
Ad d re ss A1 Re ad Out, Inc. Co unt
n+8
A2
H
L
L
L
X
L
Q1+1
Ad d re ss A1+1 Re ad Out, Lo ad A2
5294 tb l 14
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance..
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
Write Operation(1)
Cycle
Address
R/W
ADV/LD
CE(2)
CEN
BWx
OE
I/O
Comments
n
A0
L
L
L
L
L
X
X
Ad d re ss and Co ntro l me e t se tup
n+1
X
X
X
X
L
X
X
X
Clo ck Se tup Valid
n+2
X
X
X
X
L
X
X
D0
Write to Ad d re ss A0
5294 tb l 15
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
Burst Write Operation(1)
Cycle
Address
R/W
ADV/LD
CE(2)
CEN
BWx
OE
I/O
Comments
n
A0
L
L
L
L
L
X
X
Ad d re ss and Co ntro l me e t se tup
n+1
X
X
H
X
L
L
X
X
Clo ck Se tup Valid , Inc. Co unt
n+2
X
X
H
X
L
L
X
D0
Ad d re ss A0 Write , Inc. Co unt
n+3
X
X
H
X
L
L
X
D0+1
Ad d re ss A0+1 Write , Inc. Co unt
n+4
X
X
H
X
L
L
X
D0+2
Ad d re ss A0+2 Write , Inc. Co unt
n+5
A1
L
L
L
L
L
X
D0+3
Ad d re ss A0+3 Write , Lo ad A1
n+6
X
X
H
X
L
L
X
D0
Ad d re ss A0 Write , Inc. Co unt
n+7
X
X
H
X
L
L
X
D1
Ad d re ss A1 Write , Inc. Co unt
n+8
A2
L
L
L
L
L
X
D1+1
Ad d re ss A1+1 Write , Lo ad A2
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42
12
5294 tb l 16
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Read Operation with Clock Enable Used(1)
Cycle
Address
R/W
ADV/LD
CE(2)
CEN
BWx
OE
I/O
Comments
n
A0
H
L
L
L
X
X
X
Ad d re ss and Co ntro l me e t se tup
n+1
X
X
X
X
H
X
X
X
Clo ck n+1 Ig no re d
n+2
A1
H
L
L
L
X
X
X
Clo ck Valid
n+3
X
X
X
X
H
X
L
Q0
Clo ck Ig no re d . Data Q0 is o n the b us.
n+4
X
X
X
X
H
X
L
Q0
Clo ck Ig no re d . Data Q0 is o n the b us.
n+5
A2
H
L
L
L
X
L
Q0
Ad d re ss A0 Re ad o ut (b us trans.)
n+6
A3
H
L
L
L
X
L
Q1
Ad d re ss A1 Re ad o ut (b us trans.)
n+7
A4
H
L
L
L
X
L
Q2
Ad d re ss A2 Re ad o ut (b us trans.)
5294 tb l 17
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
Write Operation with Clock Enable Used(1)
Cycle
Address
R/W
ADV/LD
CE(2)
CEN
BWx
OE
I/O
Comments
n
A0
L
L
L
L
L
X
X
Ad d re ss and Co ntro l me e t se tup .
n+1
X
X
X
X
H
X
X
X
Clo ck n+1 Ig no re d .
n+2
A1
L
L
L
L
L
X
X
Clo ck Valid .
n+3
X
X
X
X
H
X
X
X
Clo ck Ig no re d .
n+4
X
X
X
X
H
X
X
X
Clo ck Ig no re d .
n+5
A2
L
L
L
L
L
X
D0
Write Data D0
n+6
A3
L
L
L
L
L
X
D1
Write Data D1
n+7
A4
L
L
L
L
L
X
D2
Write Data D2
5294 tb l 18
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42
13
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Read Operation with Chip Enable Used(1)
Cycle
Address
R/W
ADV/LD
CE(2)
CEN
BWx
OE
I/O(3)
Comments
n
X
X
L
H
L
X
X
?
De se le cte d .
n+1
X
X
L
H
L
X
X
?
De se le cte d .
n+2
A0
H
L
L
L
X
X
Z
Ad d re ss and Co ntro l me e t se tup
n+3
X
X
L
H
L
X
X
Z
De se le cte d o r STOP.
n+4
A1
H
L
L
L
X
L
Q0
Ad d re ss A0 Re ad o ut. Lo ad A1.
n+5
X
X
L
H
L
X
X
Z
De se le cte d o r STOP.
n+6
X
X
L
H
L
X
L
Q1
Ad d re ss A1 Re ad o ut. De se le cte d .
n+7
A2
H
L
L
L
X
X
Z
Ad d re ss and co ntro l me e t se tup .
n+8
X
X
L
H
L
X
X
Z
De se le cte d o r STOP.
n+9
X
X
L
H
L
X
L
Q2
Ad d re ss A2 Re ad o ut. De se le cte d .
5294 tb l 19
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
3. Device Outputs are ensured to be in High-Z after the first rising edge of clock upon power-up.
Write Operation with Chip Enable Used(1)
Cycle
Address
R/W
ADV/LD
CE(2)
CEN
BWx
OE
I/O(3)
Comments
n
X
X
L
H
L
X
X
?
De se le cte d .
n+1
X
X
L
H
L
X
X
?
De se le cte d .
n+2
A0
L
L
L
L
L
X
Z
Ad d re ss and Co ntro l me e t se tup
n+3
X
X
L
H
L
X
X
Z
De se le cte d o r STOP.
n+4
A1
L
L
L
L
L
X
D0
Ad d re ss D0 Write in. Lo ad A1.
n+5
X
X
L
H
L
X
X
Z
De se le cte d o r STOP.
n+6
X
X
L
H
L
X
X
D1
Ad d re ss D1 Write in. De se le cte d .
n+7
A2
L
L
L
L
L
X
Z
Ad d re ss and co ntro l me e t se tup .
n+8
X
X
L
H
L
X
X
Z
De se le cte d o r STOP.
n+9
X
X
L
H
L
X
X
D2
Ad d re ss D2 Write in. De se le cte d .
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42
14
5294 tb l 20
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V±5%)
Symbol
Parameter
Test Conditions
M i n.
Max.
Unit
5
µA
|ILI|
Inp ut Le akag e Curre nt
VDD = Max., VIN = 0V to VDD
___
|ILI|
LBO, JTAG and ZZ Inp ut Le akag e Curre nt(1)
VDD = Max., VIN = 0V to VDD
___
30
µA
5
µA
|ILO|
Outp ut Le akag e Curre nt
VOUT = 0V to VDDQ, De vice De se le cte d
___
VOL
Outp ut Lo w Vo ltag e
IOL = +6mA, VDD = Min.
___
0.4
V
VOH
Outp ut Hig h Vo ltag e
IOH = -6mA, VDD = Min.
2.0
___
V
5294 tb l 21
NOTE:
1. The LBO, TMS, TDI, TCK and TRST pins will be internally pulled to VDD and ZZ will be internally pulled to VSS if it is not actively driven in the application.
DC Electrical Characteristics Over the Operating
Temperature Supply Voltage Range(1) (VDD = 3.3V±5%)
150MHz
133MHz
100MHz
Unit
Symbol
Parameter
Test Conditions
Com'l Only
Com'l
Ind
Com'l
Ind
IDD
Op e rating Po we r
Sup p ly Curre nt
De vice Se le cte d , Outp uts Op e n,
ADV/LD = X, VDD = Max.,
VIN > VIH o r < VIL, f = fMAX(2)
325
300
310
250
260
mA
ISB1
CMOS Stand b y Po we r
Sup p ly Curre nt
De vice De se le cte d , Outp uts Op e n,
VDD = Max., VIN > VHD o r < VLD,
f = 0(2,3)
40
40
45
40
45
mA
ISB2
Clo ck Running Po we r
Sup p ly Curre nt
De vice De se le cte d , Outp uts Op e n,
VDD = Max., VIN > VHD o r < VLD,
f = fMAX(2.3)
120
110
120
100
110
mA
ISB3
Id le Po we r
Sup p ly Curre nt
De vice Se le cte d , Outp uts Op e n,
CEN > VIH, VDD = Max.,
VIN > VHD o r < VLD, f = fMAX(2,3)
40
40
45
40
45
mA
5294 tb l 22
NOTES:
1. All values are maximum guaranteed values.
2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/tCYC; f=0 means no input lines are changing.
3. For I/Os VHD = VDDQ – 0.2V, VLD = 0.2V. For other inputs VHD = VDD – 0.2V, VLD = 0.2V.
VDDQ/2
AC Test Loads
AC Test Conditions
50Ω
I/O
(VDDQ = 2.5V)
Z0 = 50Ω
,
Inp ut Pulse Le ve ls
0 to 2.5V
5294 drw 04
Inp ut Rise /Fall Time s
Figure 1. AC Test Load
2ns
6
Inp ut Timing Re fe re nce Le ve ls
(VDDQ/2)
5
Outp ut Timing Re fe re nce Le ve ls
(VDDQ/2)
4
AC Te st Lo ad
Se e Fig ure 1
5294 tb l 23
Δt CD 3
(Ty pi cal ,
2
ns)
1
20 30 50
80 100
Capaci t ance (pF )
200
5294 dr w 05
,
Figure 2. Lumped Capacitive Load, Typical Derating
6.42
15
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(VDD = 3.3V±5%, Commercial and Industrial Temperature Ranges)
150MHz
Symbol
Parameter
133MHz
100MHz
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tCYC
Clo ck Cycle Time
6.7
____
7.5
____
10
____
ns
tF(1)
Clo ck Fre q ue nce
____
150
____
133
____
100
MHz
tCH(2)
Clo ck Hig h Pulse Wid th
2.0
____
2.2
____
3.2
____
ns
tCL(2)
Clo ck Lo w Pulse Wid th
2.0
____
2.2
____
3.2
____
ns
____
3.8
____
4.2
____
5
ns
1.5
____
1.5
____
ns
Output Parameters
tCD
Clo ck Hig h to Valid Data
tCDC
Clo ck Hig h to Data Chang e
1.5
____
tCLZ(3,4,5)
Clo ck Hig h to Outp ut Active
1.5
____
1.5
____
1.5
____
ns
tCHZ(3,4,5)
Clo ck Hig h to Data Hig h-Z
1.5
3
1.5
3
1.5
3.3
ns
tOE
Outp ut Enab le Acce ss Time
____
3.8
____
4.2
____
5
ns
tOLZ(3,4)
Outp ut Enab le Lo w to Data Active
0
____
0
____
0
____
ns
tOHZ(3,4)
Outp ut Enab le Hig h to Data Hig h-Z
____
3.8
____
4.2
____
5
ns
Set Up Times
tSE
Clo ck Enab le Se tup Time
1.5
____
1.7
____
2.0
____
ns
tSA
Ad d re ss Se tup Time
1.5
____
1.7
____
2.0
____
ns
1.7
____
2.0
____
ns
1.7
____
2.0
____
ns
2.0
____
ns
2.0
____
ns
ns
tSD
Data In Se tup Time
1.5
____
tSW
Re ad /Write (R/W) Se tup Time
1.5
____
tSADV
Ad vance /Lo ad (ADV/LD) Se tup Time
1.5
____
1.7
____
tSC
Chip Enab le /Se le ct Se tup Time
1.5
____
1.7
____
tSB
Byte Write Enab le (BWx) Se tup Time
1.5
____
1.7
____
2.0
____
tHE
Clo ck Enab le Ho ld Time
0.5
____
0.5
____
0.5
____
ns
tHA
Ad d re ss Ho ld Time
0.5
____
0.5
____
0.5
____
ns
tHD
Data In Ho ld Time
0.5
____
0.5
____
0.5
____
ns
tHW
Re ad /Write (R/W) Ho ld Time
0.5
____
0.5
____
0.5
____
ns
tHADV
Ad vance /Lo ad (ADV/LD) Ho ld Time
0.5
____
0.5
____
0.5
____
ns
0.5
____
0.5
____
ns
0.5
____
0.5
____
ns
Hold Times
tHC
Chip Enab le /Se le ct Ho ld Time
0.5
____
tHB
Byte Write Enab le (BWx) Ho ld Time
0.5
____
5294 tb l 24
NOTES:
1. tF = 1/tCYC.
2. Measured as HIGH above 0.6VDDQ and LOW below 0.4VDDQ.
3. Transition is measured ±200mV from steady-state.
4. These parameters are guaranteed with the AC load (Figure 1) by device characterization. They are not production tested.
5. To avoid bus contention, the output buffers are designed such that tCHZ (device turn-off) is about 1ns faster than tCLZ (device turn-on) at a given temperature and voltage.
The specs as shown do not imply bus contention because tCLZ is a Min. parameter that is worse case at totally different test conditions (0 deg. C, 3.465V) than tCHZ,
which is a Max. parameter (worse case at 70 deg. C, 3.135V).
6.42
16
(2)
6.42
17
A1
tSADV
tHA
tHW
tHE
tCLZ
tHC
Pipeline
Read
tSC
A2
tSA
tSW
tSE
tCD
Pipeline
Read
Q(A1)
tHADV
tCH
tCDC
tCL
Q(A2)
O1(A2)
,
O2(A2)
Q(A
2+1)
Q(A2+2)
(CEN high, eliminates
current L-H clock edge)
Burst Pipeline Read
tCD
Q(A2+2)
tCDC
Q(A2+3)
tCHZ
Q(A2)
5294 drw 06
(Burst Wraps around
to initial state)
NOTES:
1. Q (A1) represents the first output from the external address A1. Q (A2) represents the first output from the external address A2; Q (A2+1) represents the next output data in the
burst sequence of the base address A2, etc. where address bits A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. Burst ends when new address and control are loaded into the SRAM by sampling ADV/LD LOW.
4. R/W is don't care when the SRAM is bursting (ADV/LD sampled HIGH). The nature of the burst access (Read or Write) is fixed by the state of the R/W signal when new address
and control are loaded into the SRAM.
DATAOUT
OE
BW1 - BW4
CE1, CE2
ADDRESS
R/W
ADV/LD
CEN
CLK
tCYC
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of Read Cycle(1,2,3,4)
(2)
6.42
18
A1
tSADV
tHW
tHB
tHC
Pipeline
Write
tSB
tSC
tHA
A2
tSA
tSW
tHD
Pipeline
Write
D(A1)
tSD
tHADV
,
D(A2)
D(A2+1)
Burst Pipeline Write
(CEN high, eliminates
current L-H clock edge)
tSD
D(A2+2)
tHD
D(A2)
5294 drw 07
D(A2+3)
(Burst Wraps around
to initial state)
NOTES:
1. D (A1) represents the first input to the external address A1. D (A2) represents the first input to the external address A2; D (A2+1) represents the next input data in the burst sequence
of the base address A2, etc. where address bits A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. Burst ends when new address and control are loaded into the SRAM by sampling ADV/LD LOW.
4. R/W is don't care when the SRAM is bursting (ADV/LD sampled HIGH). The nature of the burst access (Read or Write) is fixed by the state of the R/W signal when new address
and control are loaded into the SRAM.
5. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information
comes in two cycles before the actual data is presented to the SRAM.
DATAIN
OE
BW1 - BW4
CE1, CE2
ADDRESS
R/W
ADV/LD
CEN
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of Write Cycles(1,2,3,4,5)
6.42
19
A1
tSADV
tHW
tHE
tCD
tHB
tHC
Read
tSB
tSC
tHA
A2
tSA
tSW
tSE
A3
Q(A1)
tCHZ
Write
tHADV
tCH
tCLZ
Read
D(A2)
tSD tHD
A4
tCL
Q(A3)
tCDC
Write
A5
D(A4)
A6
Read
D(A5)
A7
Q(A6)
A8
Q(A7)
A9
5294 drw 08
,
,
NOTES:
1. Q (A1) represents the first output from the external address A1. D (A2) represents the input data to the SRAM corresponding to address A2.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in two
cycles before the actual data is presented to the SRAM.
DATAOUT
DATAIN
OE
BW1 - BW4
CE1, CE2(2)
ADDRESS
R/W
ADV/LD
CEN
CLK
tCYC
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of Combined Read and Write Cycles (1,2,3)
6.42
20
A1
tSADV
tHE
tHA
tHW
tHC
tCD
tCLZ
tHB
B(A2)
tSB
tSC
A2
tSA
tSW
tCH
tHADV
Q(A1)
tCL
tCHZ
tCDC
Q(A1)
A3
D(A2)
tSD tHD
A4
5294 drw 09
Q(A3)
A5
,
NOTES:
1. Q (A1) represents the first output from the external address A1. D (A2) represents the input data to the SRAM corresponding to address A2.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. CEN when sampled high on the rising edge of clock will block that L-H transition of the clock from propogating into the SRAM. The part will behave as if the L-H clock transition
did not occur. All internal registers in the SRAM will retain their previous state.
4. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information
comes in two cycles before the actual data is presented to the SRAM.
DATAOUT
DATAIN
OE
BW1 - BW4
CE1, CE2(2)
ADDRESS
R/W
ADV/LD
CEN
tSE
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of CEN Operation(1,2,3,4)
(2)
6.42
21
A1
tSADV
tHW
tHE
tSC
tCLZ
tCD
tHC
tHA
A2
tSA
tSW
tSE
Q(A1)
tHADV
tCH
tCDC
tCHZ
tHB
Q(A2)
tSB
A3
tCL
D(A3)
tSD tHD
A4
Q(A4)
A5
5294 drw 10
,
NOTES:
1. Q (A1) represents the first output from the external address A1. D (A3) represents the input data to the SRAM corresponding to address A3.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. CEN when sampled high on the rising edge of clock will block that L-H transition of the clock from propogating into the SRAM. The part will behave as if the L-H clock transition
did not occur. All internal registers in the SRAM will retain their previous state.
4. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information
comes in two cycles before the actual data is presented to the SRAM.
DATAOUT
DATAIN
OE
BW1 - BW4
CE1, CE2
ADDRESS
R/W
ADV/LD
CEN
CLK
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of CS Operation(1,2,3,4)
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
JTAG Interface Specification (SA Version only)
NOTES:
1. Device inputs = All device inputs except TDI, TMS and TRST.
2. Device outputs = All device outputs except TDO.
3. During power up, TRST could be driven low or not be used since the JTAG circuit resets automatically. TRST is an optional JTAG reset.
JTAG AC Electrical
Characteristics(1,2,3,4)
Symbol
Parameter
Min.
Max.
Units
tJCYC
JTAG Clo ck Inp ut Pe rio d
100
____
ns
tJCH
JTAG Clo ck HIGH
40
____
ns
tJCL
JTAG Clo ck Lo w
40
____
ns
tJR
JTAG Clo ck Rise Time
____
5(1)
ns
tJF
JTAG Clo ck Fall Time
____
5(1)
ns
tJRST
JTAG Re se t
50
____
ns
tJRSR
JTAG Re se t Re co ve ry
50
____
ns
tJCD
JTAG Data Outp ut
____
20
ns
tJDC
JTAG Data Outp ut Ho ld
0
____
ns
ns
ns
tJS
JTAG Se tup
25
____
tJH
JTAG Ho ld
25
____
Scan Register Sizes
Register Name
Bit Size
Instructio n (IR)
4
Byp ass (BYR)
1
JTAG Id e ntificatio n (JIDR)
Bo und ary Scan (BSR)
32
No te (1)
I5294 tb l 03
NOTE:
1. The Boundary Scan Descriptive Language (BSDL) file for this device is available
by contacting your local IDT sales representative.
I5294 tb l 01
NOTES:
1. Guaranteed by design.
2. AC Test Load (Fig. 1) on external output signals.
3. Refer to AC Test Conditions stated earlier in this document.
4. JTAG operations occur at one speed (10MHz). The base device may run at any speed specified in this datasheet.
6.42
22
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
JTAG Identification Register Definitions (SA Version only)
Instruction Field
Value
Re visio n Numb e r (31:28)
0x2
IDT De vice ID (27:12)
0x210, 0x212
IDT JEDEC ID (11:1)
0x33
ID Re g iste r Ind icato r Bit (Bit 0)
1
Description
Re se rve d fo r ve rsio n numb e r.
De fine s IDT p art numb e r 71V2546SA and 71V2548SA, re sp e ctive ly.
Allo ws uniq ue id e ntificatio n o f d e vice ve nd o r as IDT.
Ind icate s the p re se nce o f an ID re g iste r.
I5294 tb l 02
Available JTAG Instructions
Instruction
Description
OPCODE
EXTEST
Fo rce s co nte nts o f the b o und ary scan ce lls o nto the d e vice o utp uts(1).
Place s the b o und ary scan re g iste r (BSR) b e twe e n TDI and TDO.
0000
SAMPLE/PRELOAD
Place s the b o und ary scan re g iste r (BSR) b e twe e n TDI and TDO.
SAMPLE allo ws d ata fro m d e vice inp uts(2) and o utp uts(1) to b e cap ture d
in the b o und ary scan ce lls and shifte d se rially thro ug h TDO. PRELOAD
allo ws d ata to b e inp ut se rially into the b o und ary scan ce lls via the TDI.
0001
DEVICE_ID
Lo ad s the JTAG ID re g iste r (JIDR) with the ve nd o r ID co d e and p lace s
the re g iste r b e twe e n TDI and TDO.
0010
HIGHZ
Place s the b yp ass re g iste r (BYR) b e twe e n TDI and TDO. Fo rce s all
d e vice o utp ut d rive rs to a Hig h-Z state .
0011
0100
RESERVED
RESERVED
RESERVED
Se ve ral co mb inatio ns are re se rve d . Do no t use co d e s o the r than tho se
id e ntifie d fo r EXTEST, SAMPLE/PRELOAD, DEVICE_ID, HIGHZ, CLAMP,
VALIDATE and BYPASS instructio ns.
RESERVED
CLAMP
0101
0110
0111
Use s BYR. Fo rce s co nte nts o f the b o und ary scan ce lls o nto the d e vice
o utp uts. Place s the b yp ass re g iste r (BYR) b e twe e n TDI and TDO.
RESERVED
1000
1001
RESERVED
1010
Same as ab o ve .
RESERVED
1011
RESERVED
1100
VALIDATE
Auto matically lo ad e d into the instructio n re g iste r whe ne ve r the TAP
co ntro lle r p asse s thro ug h the CAPTURE-IR state . The lo we r two b its ' 01'
are mand ate d b y the IEEE std . 1149.1 sp e cificatio n.
1101
RESERVED
Same as ab o ve .
1110
BYPASS
The BYPASS instructio n is use d to truncate the b o und ary scan re g iste r
as a sing le b it in le ng th.
1111
I5294 tb l 04
NOTES:
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, and TRST.
6.42
23
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of OE Operation(1)
OE
tOE
tOHZ
tOLZ
Valid
DATAOUT
NOTE:
1. A read operation is assumed to be in progress.
5294 drw 11
Ordering Information
XXXX
Device
Type
X
XX
XX
XX
Power
Speed
Package
X
X
Process/
Temperature
Range
Blank
I
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
G
Restricted hazardous substance device
PF**
BG
BQ
100-pin Plastic Thin Quad Flatpack (TQFP)
119 Ball Grid Array (BGA)
165 Fine Pitch Ball Grid Array (fBGA)
150*
133
100
Clock Frequency in Megahertz
S
SA
Standard Power
Standard Power with JTAG Interface
Blank
First generation or current die step
Current generation die step optional
X
,
IDT71V2546 128Kx36 Pipelined ZBT SRAM with 2.5V I/O
IDT71V2548 256Kx18 Pipelined ZBT SRAM with 2.5V I/O
5294 drw 12
*Available in commercial range only
** JTAG (SA version) is not available with 100-pin TQFP package
6.42
24
,
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Datasheet Document History
12/31/99
03/04/00
05/02/00
05/26/00
07/26/00
10/25/00
05/20/02
09/30/04
02/23/07
05/27/10
Pg. 1,14,
15,22
Pg. 5,6
Created preliminary datasheet from 71V2556 and 71V2558 datasheets. Changed tCDC, t
tCLZ, andtCHZ minimums from 1.0ns to 1.5ns.
Add 150 MHz speed grade offering
Insert clarification note to Recommended Operating Temperature and Absolute Max Ratings
tables
Pg. 5,6,7
Clarify note onTQFP and BGA pin configurations; corrected typo in pinout
Pg. 6
Add BGA capacitance table
Pg. 21
Add 100 pin TQFP Package Diagram Outline
Add new package offering, 13 x 15mm 165 fBGA
Pg. 23
Correct 119 BGA Package Diagram Outline
Pg. 5-8
Add ZZ, sleep mode refernce note to BG119, PK100 and BQ165 pinouts
Pg. 8
Update BQ165 pinout
Pg. 23
Update BG119 Package Diagram Outline dimensions
Remove Preliminary status from datasheet
Pg. 8
Add reference note to pin N5 on BQ165, reserved for JTAG pin TRST
Pg. 1-8,15,22,23, Added JTAG "SA" version functionality and updated ZZ pin descriptions and notes
27
Pg. 7
Updated pin configuration for the 119 BGA-reordered I/O signals on P6, P7 (128K x 36)
and P7, N6, L6, K7, H6, G7, F6, E7, D6 (256K x 18).
Pg. 27
Added X step die generation to data sheet ordering information.
Pg. 24
Added "Restricted hazardous substance device" to the ordering information
CORPORATE HEADQUARTERS
6024 Silver Creek Valley Rd
San Jose, CA 95138
for SALES:
800-345-7015 or 408-284-8200
fax: 408-284-2775
www.idt.com
for Tech Support:
sramhelp@idt.com
800-345-7015 or
408/284-4555
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
ZBT and ZeroBus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola Inc.
6.42
25
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