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IDT709149S8PF

IDT709149S8PF

  • 厂商:

    IDT

  • 封装:

  • 描述:

    IDT709149S8PF - HIGH-SPEED 36K (4K x 9-BIT) SYNCHRONOUS PIPELINED DUAL-PORT SRAM - Integrated Device...

  • 详情介绍
  • 数据手册
  • 价格&库存
IDT709149S8PF 数据手册
HIGH-SPEED 36K (4K x 9-BIT) SYNCHRONOUS PIPELINED DUAL-PORT SRAM Features x x IDT709149S x x x Architecture based on Dual-Port SRAM cells – Allows full simultaneous access from both ports High-speed clock-to-data output times – Commercial: 8/10/12ns (max.) Low-power operation – IDT709149S Active: 1500mW (typ.) Standby: 75mW (typ.) 4K X 9 bits Synchronous operation – 4ns setup to clock, 1ns hold on all control, data, and address inputs – Data input, address, and control registers – Fast 8ns clock to data out x x x x x 13ns cycle time, 76MHz operation in pipeline mode – Self-timed write allows for fast cycle times TTL-compatible, singles 5V (±10%) power supply Clock Enable feature Guaranteed data output hold times Industrial temperature range (–40°C to +85°C) is available for selected speeds. Description The IDT709149 is a high-speed 4K x 9 bit synchronous Dual-Port SRAM. The memory array is based on Dual-Port memory cells to allow simultaneous access from both ports. Registers on control, data, and address inputs provide low set-up and hold times. The timing latitude provided by this approach will allow systems to be designed with very Functional Block Diagram REGISTER REGISTER I/O0-8L WRITE LOGIC SENSE AMPS MEMOR MEMORY Y ARRAY ARRAY DECODER DECODER WRITE LOGIC SENSE AMPS I/O0-8R FT/PIPEDR 0/1 0 1 OEL CLKL CLKENL Selftimed Write Logic REG en REG en OER CLKR CLKENR Selftimed Write Logic R/WL CEL REG REG R/WR CER 3494 drw 01 A0L-A11L A0R-A11R SEPTEMBER 1999 1 ©1999 Integrated Device Technology, Inc. D SC-3494/4 IDT709149S High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges short cycle times. This device has been optimized for applications having unidirectional data flow or bi-directional data flow in bursts, by utilizing input data registers. The IDT709149 utilizes a 9-bit wide data path to allow for parity at the user's option. This feature is especially useful in data communication applications where it is necessary to use a parity bit for transmission/reception error checking. Fabricated using IDT’s CMOS high-performance technology, these Dual-Ports typically operate on only 800mW of power at maximum high-speed clock-to-data output times as fast as 8ns. An automatic power down feature, controlled by CE, permits the on-chip circuitry of each port to enter a very low standby power mode. The IDT709149 is packaged in an 80-pin TQFP. Reference N/C A6L A7L A8L A9L A10L A11L N/C OEL VCC VCC R/WL N/C N/C CEL GND I/O8L I/O7L I/O6L N/C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 N/C N/C A5L A4L A3L A2L A1L A0L CLKENL CLKL CLKR CLKENR A0R A1R A2R A3R A4R A5R A6R N/C IDT709149PF PN80-1(4) 80-Pin TQFP Top View(5) N/C A7R A8R A9R A10R A11R N/C , OER FT/PIPEDR GND GND R/WR N/C N/C CER GND I/O8R I/O7R I/O6R N/C 3494 drw 02 Pin Configurations(1,2,3) NOTES: 1. All VCC pins must be connected to power supply. 2. All ground pins must be connected to ground supply. 3. Package body is approximately 14mm x 14mm x 1.4mm. 4, This package code is used to reference the package diagram. 5. This text does not indicate the orientaion of the actual part-marking. N/C N/C I/O5L VCC I/O4L I/O3L I/O2L I/O1L I/O0L GND GND I/O0R I/O1R I/O2R I/O3R VCC I/O4R I/O5R N/C N/C 6.42 2 IDT709149S High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges Absolute Maximum Ratings(1) Symbol V TERM(2) Rating Terminal Voltage with Respect to GND Terminal Voltage Temperature Under Bias Storage Temperature DC Output Current Commercial & Industrial -0.5 to +7.0 Unit V Maximum Operating Temperature and Supply Voltage(1,2) Grade Commercial Ambient Temperature 0OC to +70OC -40OC to +85OC GND 0V 0V Vcc 5.0V + 10% 5.0V + 10% 3494 tbl 02 V TERM(2) TBIAS TSTG IOUT -0.5 to VCC -55 to +125 -55 to +125 50 V o Industrial C C o NOTES: 1. This is the parameter TA. 2. Industrial temperature: for specific speeds, packages and powers contact your sales office. mA 3494 tbl 01 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%. Recommended DC Operating Conditions Symbol VCC GND V IH V IL Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min. 4.5 0 2.2 -0.5 (1) Typ. 5.0 0 ____ ____ Max. 5.5 0 6.0 (2) Unit V V V V 3494 tbl 03 0.8 Capacitance (TA = +25°C, f = 1.0MHz) Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 3dV VOUT = 3dV Max. 8 9 Unit pF pF 3494 tbl 04 NOTES: 1. VIL > -1.5V for pulse width less than 10ns. 2. VTERM must not exceed Vcc + 10%. NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. 3dV references the interpolated capacitance when the input and output switch from 0V to 3V or from 3V to 0V. DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VCC = 5.0V ± 10%) 709149S Symbol |ILI| |ILO| V OL V OH Parameter Input Leakage Current(1) Output Leakage Current Output Low Voltage Output High Voltage Test Conditions V CC = 5.5V, VIN = 0V to V CC VOUT = 0V to V CC IOL = + 4mA IOH = -4mA Min. ___ ___ ___ Max. 10 10 0.4 ___ Unit µA µA V V 3494 tbl 05 2.4 NOTE: 1. At V CC < 2.0V, input leakages are undefined 6.42 3 IDT709149S High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(4,5) (VCC = 5V ± 10%) 709149S8 Com'l Only Symbol ICC Parameter Dynamic Operating Current (Both Ports Active) Standby Current (Both Ports - TTL Level Inputs) Standby Current (One Port - TTL Level Inputs) Full Standby Current (Both Ports - All CMOS Level Inputs) Full Standby Current (One Port - All CMOS Level Inputs) Test Condition CEL and C ER = VIL, Outputs Open f = fMA X(1) CEL and C ER = VIH f = fMA X(1) CE"A " = VIL and C E"B" = VIH(3) Active Port Outputs Open, f=fMA X(1) CEL and CER > VCC - 0.2V, V IN > V CC - 0.2V or V IN < 0.2V, f = 0(2) CE"A " < 0.2V and CE"B " > VCC - 0.2V(3) V IN > V CC - 0.2V or V IN < 0.2V Active Port Outputs Open, f = fMA X(1) Version COM'L IND COM'L IND COM'L IND COM'L IND COM'L IND Typ. ____ ____ ____ ____ ____ ____ 709149S10 Com'l Only Typ. ____ ____ ____ ____ ____ ____ 709149S12 Com'l Only Typ. ____ ____ ____ ____ ____ ____ Max. 320 ____ Max. 310 ____ Max. 300 ____ Unit mA ISB 1 150 ____ 150 ____ 140 ____ mA ISB 2 230 ____ 220 ____ 210 ____ mA ISB 3 ____ 15 ____ ____ 15 ____ ____ 15 ____ mA ____ ____ ____ ISB 4 ____ ____ 220 ____ ____ ____ 210 ____ ____ ____ 200 ____ mA NOTES: 1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCLK, using "AC TEST CONDITIONS" at input levels of GND to 3V. 2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby. 3. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 4. Vcc = 5V, TA = 25°C for Typ, and are not production tested. ICC DC = 150mA (Typ). 5. Industrial temperature: for specific speeds, packages and powers contact your sales office. 3494 tbl 0 6 AC Test Conditions Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND to 3.0V 3ns Max. 1.5V 1.5V Figures 1,2 and 3 3494 tbl 07 8 7 6 9pF is the I/O capacitance of this device, and 30pF is the AC Test Load Capacitance 5V 893Ω DATAOUT 347Ω 30pF DATAOUT 347Ω 5V 893Ω ∆tCD (Typical, ns) 5 4 3 2 5pF* 1 0 , 3494 drw 03 3494 drw 04 -1 20 40 60 80 100 120 140 160 180 200 Capacitance (pF) 3494 drw 05 , Figure 1. AC Output Test load. Figure 2. Output Test Load (For tCKLZ , tCKHZ, tOLZ, and tOHZ). *Including scope and jig. Figure 3. Typical Output Derating (Lumped Capacitive Load). 6.42 4 IDT709149S High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature Range— (Read and Write Cycle Timing)(4) (Commercial: V CC = 5V ± 10%, TA = 0°C to +70°C) 709149S8 Com'l Only Symbol tCYC1 tCYC2 tCH1 tCL1 tCH2 tCL2 tCD1 tCD2 tS tH tDC tCKLZ tCKHZ tOE tOLZ tOHZ tSCK tHCK tCWDD Parameter Clock Cycle Time (Flow-Through) (3) Clock Cycle Time (Pipelined) (3) (3) 709149S10 Com'l Only Min. 20 15 7 7 6 6 ____ ____ 709124S12 Com'l Only Min. 20 16 8 8 6 6 ____ ____ Min. 16 13 6 6 6 6 Max. ____ ____ ____ ____ ____ ____ Max. ____ ____ ____ ____ ____ ____ Max. ____ ____ ____ ____ ____ ____ Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 3494 tbl 08 Clock High Time (Flow-Through) Clock Low Time (Flow-Through) Clock High Time (Pipelined) (3) Clock Low Time (Pipelined) (3) (3) Clock to Data Valid (Flow-Through) Clock to Data Valid (Pipelined) Registered Signal Set-up Time Registered Signal Hold Time Data Output Hold After Clock High Clock High to Output Low-Z (1,2) (1,2) (3) (3) ____ ____ 12 8 ____ ____ ____ ____ 15 10 ____ ____ ____ ____ 20 12 ____ ____ ____ ____ 4 1 1 2 ____ ____ 4 1 1 2 ____ ____ 5 1 1 2 ____ ____ Clock High to Output High-Z 7 8 ____ 7 8 ____ 9 10 ____ Output Enable to Output Valid Output Enable to Output Low-Z (1,2) (1,2) 0 ____ 0 ____ 0 ____ Output Disable to Output High-Z 7 ____ ____ 7 ____ ____ 9 ____ ____ Clock Enable, Disable Set-Up Time Clock Enable, Disable Hold Time Write Port Clock High to Read Data Delay 4 1 ____ 4 1 ____ 5 1 ____ 25 30 35 NOTES: 1. Transition is measured ±200mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization, but is not production tested. 3. The Pipelined output parameters (tCYC2, t CD2) always apply to the Left Port. The Right Port uses the Pipelined tCYC2 and tCD2 when FT/PIPEDR = VIH and the FlowThrough parameters (t CYC1, tCD1 ) when FT/PIPEDR = VIL. 4. Industrial temperature: for specific speeds, packages and powers contact your sales office. 6.42 5 IDT709149S High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Read Cycle for Flow-Through Output on Right Port (FT/PipedR = VIL) tCYC1 CLK tCH1 tCL1 tSCK CLKEN tS CE tH tHCK tSCK R/W ADDRESS An tCD1 An + 1 tDC Qn tCKLZ (1) An + 2 An + 3 tCKHZ (1) DATAOUT Qn + 1 tOHZ (1) Qn + 1 tOLZ tOE 3494 drw 06 (1) OE Timing Waveform of Left Port Write to Flow-Through Right Port Read (FT/Piped R = V IL)(2,3) CLK "L" R/W "L" ADDR "L" MATCH NO MATCH DATA IN "L" VALID VALID tCCS CLK "R" R/W "R" ADDR "R" MATCH NO MATCH tCWDD DATA OUT "R" VALID tCD1 VALID tDC 3494 drw 07 NOTES: 1. Transition is measured ±200mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. CEL = CER = VIL, CLKENL = CLKENR = VIL 3. OE = VIL for the reading port, port 'R'. 6.42 6 IDT709149S High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Read Cycle for Pipelined Operation (Left Port; Right Port when FT/PipedR = VIH)(3) tCYC2 tCH2 CLK CE tS tH tS tH tCL2 R/W tS An (1 Latency) DATAOUT tCKLZ OE (2) (1) tH ADDRESS An + 1 tCD2 An + 2 tDC Qn Qn + 1 An + 3 tCD2 Qn + 2 (1) tOHZ tOLZ (1) tOE 3494 drw 08 NOTES: 1. Transition is measured ±200mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge. 3. CLKEN L and CLKENR = V IL. 6.42 7 IDT709149S High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Pipelined Read-to-Write-to-Read (OE = VIL) tCYC2 tCH2 tCL2 CLK CE tS tH tS R/W tS tH tH ADDRESS An tS tH An +1 An + 2 An + 2 tS tH An + 3 An + 4 DATAIN (2) Dn + 2 tCD2 Qn READ NOP (3) tCKHZ (1) tCKLZ (1) tCD2 Qn + 3 DATAOUT WRITE READ 3494 drw 09 Timing Waveform of Pipelined Read-to-Write-to-Read ( OE Controlled) tCH2 CLK tS CE tS R/W tS tH An + 4 tH tH tCYC2 tCL2 ADDRESS tS DATAIN An tH An +1 An + 2 tS tH An + 3 An + 5 (2) tCD2 Qn tOHZ (1) Dn + 2 Dn + 3 tCKLZ(1) tCD2 Qn + 4 DATAOUT OE READ WRITE READ 3494 drw 10 NOTES: 1. Transition is measured ±200mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 3. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity. 6.42 8 IDT709149S High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges Functional Description The IDT709149 provides a true synchronous Dual-Port Static RAM interface. Registered inputs provide very short set-up and hold times on address, data, and all critical control inputs. All internal registers are clocked on the rising edge of the clock signal. An asynchronous output enable is provided to ease asynchronous bus interfacing. The internal write pulse width is dependent only on the low to high transitions of the clock signal to initiate a write allowing the shortest possible realized cycle times. Clock enable inputs are provided to stall the operation of the address and data input registers without introducing clock skew for very fast interleaved memory applications. A HIGH on the CE input for one clock cycle will power down the internal circuitry to reduce static power consumption. When piplelined mode is enabled, two cycles are required with CE LOW to reactivate the outputs. Truth Table I: Read/Write Control(1) Inputs Synchronous(3) CLK ↑ ↑ ↑ ↑ CE H L L X R/W X L H X Asynchronous OE X X L H I/O 0-8 High-Z DATAIN DATA OUT High-Z Deselected—Power Down Selected and Write Enable Read Selected and Data Output Enabled Read (1 Latency) Data I/O Disabled 3494 tbl 09 Outputs Mode Truth Table II: Clock Enable Function Table(1) Inputs Operating Mode Load "1" Load "0" Hold (do nothing) CLK(3) ↑ ↑ ↑ X CLKEN(2) L L H H Register Inputs ADDR H L X X DATAIN H L X X Register Outputs(4) ADDR H L NC NC DATAOUT H L NC NC 3494 tbl 10 NOTES: 1. 'H' = HIGH voltage level steady state, 'h' = HIGH voltage level one set-up time prior to the LOW-to-HIGH clock transition, 'L' = LOW voltage level steady state 'l' = LOW voltage level one set-up time prior to the LOW-to-HIGH clock transition, 'X' = Don't care, 'NC' = No change 2. CLKEN = VIL must be clocked in during Power-Up. 3. Control signals are initialted and terminated on the rising edge of the CLK, depending on their input level. When R/W and CE are LOW, a write cycle is initiated on the LOWto-HIGH transition of the CLK. Termination of a write cycle is done on the next LOW-to-HIGH transistion of the CLK. 4. The register outputs are internal signals from the register inputs being clocked in or disabled by CLKEN. 6.42 9 IDT709149S High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges Ordering Information IDT XXXX Device Type A Power 999 Speed A Package A Process/ Temperature Range Blank Commercial (0°C to +70°C) PF 80-pin TQFP (PN80-1) 8 10 12 S 709149 Commercial Only Commercial Only Commercial Only Standard Power Speed in nanoseconds 36K (4K x 9-Bit) Synchronous Pipelined Dual-Port RAM 3494 drw 11 NOTE: 1. Industrial temperature range is available. For specific speeds, packages and poewrs contact your sales office. Datasheet Document History 3/8/99: Initiated datasheet document history Converted to new format Cosmetic and typographical corrections Added additional notes to pin configurations Changed drawing format Removed Preliminary 6/3/99: 9/1/99: CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com 610 .42 for Tech Support: 831-754-4613 DualPortHelp@idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc.
IDT709149S8PF
### 物料型号 - 型号:IDT709149S

### 器件简介 - 简介:IDT709149S是一款高速36K(4Kx9位)同步流水线双端口静态RAM。该存储器基于双端口SRAM单元,允许两个端口同时访问。它具有高速的时钟到数据输出时间,低功耗操作,以及4K x 9位的同步操作能力。

### 引脚分配 - 引脚配置:该器件封装在80引脚的TQFP中,具体的引脚配置图可以参考文档中的图示。

### 参数特性 - 特性: - 双端口SRAM架构,允许两个端口同时访问。 - 高速时钟到数据输出时间:商用级为8/10/12ns(最大值)。 - 低功耗操作:活动状态1500mW(典型值),待机状态75mW(典型值)。 - 同步操作,4ns设定时间,地址输入。 - 数据输入、地址和控制寄存器,快速8ns时钟到数据输出。 - 13ns周期时间,流水线模式下76MHz操作。 - TTL兼容,单电源(10%)供电,时钟使能功能。 - 保证数据输出保持时间。 - 工业温度范围(-40°C至+85°C)可供选定速度选择。

### 功能详解 - 功能:IDT709149提供真正的同步双端口静态RAM接口。寄存器输入提供非常短的设置和保持时间。所有内部寄存器都在时钟信号的上升沿被时钟。提供了异步输出使能,以便于异步总线接口。内部写脉冲宽度仅依赖于时钟信号的高电平转换,以实现尽可能短的周期时间。提供了时钟使能输入,以在不引入时钟偏斜的情况下,暂停地址和数据输入寄存器的操作。

### 应用信息 - 应用:该器件适用于具有单向数据流或双向数据突发流的应用,通过利用输入数据寄存器进行优化。

### 封装信息 - 封装:80引脚TQFP封装。
IDT709149S8PF 价格&库存

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