HIGH-SPEED 2.5V 1024K x 36 IDT70T3509M SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
Features:
◆ ◆
◆ ◆ ◆ ◆
True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 4.2ns (133MHz)(max.) – Industrial: 4.2ns (133MHz)(max.) Selectable Pipelined or Flow-Through output mode Counter enable and repeat features Interrupt Flags Full synchronous operation on both ports – 7.5ns cycle time, 133MHz operation (9.5Gbps bandwidth) – 1.5ns setup to clock and 0.5ns hold on all control, data, and address inputs @ 133MHz – Fast 4.2ns clock to data out
◆
◆ ◆ ◆
◆ ◆ ◆
◆
– Data input, address, byte enable and control registers – Self-timed write allows fast cycle time Separate byte controls for multiplexed bus and bus matching compatibility Dual Cycle Deselect (DCD) for Pipelined Output Mode 2.5V (±100mV) power supply for core LVTTL compatible, selectable 3.3V (±150mV) or 2.5V (±100mV) power supply for I/Os and control signals on each port Includes JTAG functionality Available in a 256-pin Ball Grid Array (BGA) Common BGA footprint provides design flexibility over seven density generations (512K to 36M-bit) Green parts available, see ordering information
BE3R
Functional Block Diagram
BE3L BE2L BE1L BE0L BE2R BE1R BE0R
FT/PIPEL
1/0
0a 1a a
0b 1b b
0c 1c c
0d 1d d
1d 0d d
1c 0c c
1b 0b b
1a 0a a
1/0
FT/PIPER
R/ WL
R/WR
(2)
(2)
CE0L CE1L
1 0 1/0 B B BBB B BB W W WW W W W W 01233210 L L LL RRRR 1 0 1/0
CE0R CE1R
OEL
OER
Dout0-8_L Dout9-17_L Dout18-26_L Dout27-35_L
Dout0-8_R Dout9-17_R Dout18-26_R Dout27-35_R
1d 0d 1c 0c 1b 0b 1a 0a
0a 1a 0b 1b 0c 1c 0d 1d
0/1
,
FT/PIPER
FT/PIPEL
0/1
a b cd
dcba
1024K x 36 MEMORY ARRAY
I/O0L - I/O35L
Din_L
Din_R
I/O0R - I/O 35R
CLKL A19L A0L REPEATL ADSL CNTEN L A19R
CLKR
,
Counter/ Address Reg.
ADDR_L
ADDR_R
Counter/ Address Reg.
A 0R REPEATR ADSR CNTENR
TDI TCK TMS TRST
CE 0 L
CE1L
R/ W L
INTERRUPT LOGIC
R/ WR
CE0 R CE1R
JTAG
TDO
INTL ZZL
(1)
INTR
ZZ CONTROL LOGIC
ZZR
(1)
5682 drw 01
NOTE: 1. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. All static inputs, i.e., PL/FTx and OPTx and the sleep mode pins themselves (ZZx) are not affected during sleep mode. 2. See Truth Table I for Functionality.
AUGUST 2007
DSC 5682/7
1
©2007 Integrated Device Technology, Inc.
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Description:
The IDT70T3509M is a high-speed 1024K x 36 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times. With an input data register, the IDT70T3509M has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3509M can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.
6.42 2
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Pin Configuration (1,2,3,4)
70T3509M BP BP-256(5,7) 256-Pin BGA Top View(6)
A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16
08/03/04 A1
NC
B1
TDI
B2
A19L
B3
A 17L
B4
A 14L
B5
A11L
B6
A 8L
B7
BE2L
B8
CE1L
B9
OEL CNTENL A5L
B10 B11 B12
A2L
B13
A0L
B14
NC
B15
NC
B16
I/O18L
C1
NC
C2
TDO
C3
A 18L
C4
A15L
C5
A12L
C6
A 9L
C7
BE3L
C8
CE0L R/WL REPEATL
C9 C10 C11
A4L
C12
A1L
C13
VDD
C14
I/O17L
C15
NC
C16
I/O18R I/O19L
D1 D2
VSS
D3
A16L
D4
A13L
D5
A10L
D6
A7L
D7
BE1L
D8
BE0L CLKL ADSL
D9 D10 D11
A6L
D12
A3L
D13
OPTL I/O17R I/O16L
D14 D15 D16
I/O20R I/O19R I/O20L PIPE/FTL VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDD I/O15R I/O15L I/O16R
E1 E2 E3 E4 E5 E6 E7 E8 E9 E10 E11 E12 E13 E14 E15 E16
I/O21R I/O21L I/O22L VDDQL
F1 F2 F3 F4
VDD
F5
VDD
F6
INTL
F7
VSS
F8
VSS
F9
VSS
F10
VDD
F11
VDD VDDQR I/O13L I/O14L I/O14R
F12 F13 F14 F15 F16
I/O23L I/O22R I/O23R VDDQL VDD
G1 G2 G3 G4 G5
NC
G6
NC
G7
VSS
G8
VSS
G9
VSS
G10
VSS
G11
VDD VDDQR I/O12R I/O13R I/O12L
G12 G13 G14 G15 G16
I/O24R I/O24L I/O25L VDDQR
H1 H2 H3 H4
VSS
H5
VSS
H6
VSS
H7
VSS
H8
VSS
H9
VSS
H10
VSS
H11
VSS
H12
VDDQL I/O10L I/O11L I/O11R
H13 H14 H15 H16
I/O26L I/O25R I/O26R VDDQR VSS
J1 J2 J3 J4 J5
VSS
J6
VSS
J7
VSS
J8
VSS
J9
V SS
J10
VSS
J11
VSS
J12
VDDQL I/O9R
J13 J14
IO9L I/O10R
J15 J16
I/O27L I/O28R I/O27R VDDQL
K1 K2 K3 K4
ZZR
K5
VSS
K6
VSS
K7
VSS
K8
VSS
K9
VSS
K10
VSS
K11
ZZL VDDQR I/O8R I/O7R
K12 K13 K14 K15
I/O8L
K16
I/O29R I/O29L I/O28L VDDQL
L1 L2 L3 L4
VSS
L5
VSS
L6
VSS
L7
VSS
L8
VSS
L9
VSS
L10
VSS
L11
VSS
L12
VDDQR I/O6R I/O6L I/O7L
L13 L14 L15 L16
I/O30L I/O31R I/O30R VDDQR VDD
M1 M2 M3 M4 M5
NC
M6
NC
M7
VSS
M8
VSS
M9
V SS
M10
VSS
M11
VDD
M12
VDDQL I/O5L
M13 M14
I/O4R I/O5R
M15 M16
I/O32R I/O32L I/O31L VDDQR
N1 N2 N3 N4
VDD
N5
VDD
N6
INTR
N7
VSS
N8
VSS
N9
VSS
N10
VDD
N11
VDD
N12
VDDQL I/O3R
N13 N14
I/O3L I/O4L
N15 N16
I/O33L I/O34R I/O33R P IP E /FTR V DDQR VDDQR VDDQL VDDQL V DDQR VDDQR VDDQL VDDQL
P1 P2 P3 P4 P5 P6 P7 P8 P9 P10 P11 P12
VDD
P13
I/O2L
P14
I/O1R I/O2R
P15 P16
I/O35R I/O34L TMS
R1 R2 R3
A16R
R4
A13R
R5
A10R
R6
A7R
R7
BE1R BE0R CLKR ADS R
R8 R9 R10 R11
A6R
R12
A3R
R13
I/O0L I/O0R
R14 R15
I/O1L
R16
I/O35L
T1
NC
T2
TRST A18R
T3 T4
A15R
T5
A12R
T6
A9R
T7
BE3R CE0R R/WR REPEATR A4R
T8 T9 T10 T11 T12
A1R
T13
OPTR
T14
NC
T15
NC
T16
,
NC
TCK
A19R
A17R
A14R
A11R
A8R
BE2R CE1R
OER CNTENR A5R
A2R
A 0R
NC
NC
5682 drw 02d
NOTES: , 1. All VDD pins must be connected to 2.5V power supply. 2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VDD (2.5V), and 2.5V if OPT pin for that port is set to VSS (0V). 3. All VSS pins must be connected to ground supply. 4. Package body is approximately 17mm x 17mm x 1.76mm, with 1.0mm ball-pitch. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking. 7. BP-256 package thickness is 1.76mm nominal. This is thicker than the BC-256 package (1.40mm nominal) used for the lower density IDT dual-port products.
6.42 3
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Pin Names
Left Port CE0L, CE1L R/WL OEL A0L - A19L I/O0L - I/O35L CLKL PL/FTL ADSL CNTENL REPEATL BE0L - BE3L VDDQL OPTL ZZL VDD VSS TDI TDO TCK TMS TRST INTL INTR Right Port CE0R, CE1R R/WR OER A0R - A19R I/O0R - I/O35R CLKR PL/FTR ADSR CNTENR REPEATR BE0R - BE3R VDDQR OPTR ZZR Names Chip Enables (Input)(5) Read/Write Enable (Input) Output Enable (Input) Address (Input) Data Input/Output Clock (Input) Pipeline/Flow-Through (Input) Address Strobe Enable (Input) Counter Enable (Input) Counter Repeat(3) (Input) Byte Enables (9-bit bytes) (Input)(5) Power (I/O Bus) (3.3V or 2.5V)(1) (Input) Option for selecting VDDQX(1,2) (Input) Sleep Mode pin(4) (Input) Power (2.5V)(1) (Input) Ground (0V) (Input) Test Data Input Test Data Output Test Logic Clock (10MHz) (Input) Test Mode Select (Input) Reset (Initialize TAP Controller) (Input) Interrupt Flag (Output)
5682 tbl 01
NOTES: 1. VDD, OPTX, and VDDQX must be set to appropriate operating levels prior to applying inputs on the I/Os and controls for that port. 2. OPTX selects the operating voltage levels for the I/Os and controls on that port. If OPTX is set to VDD (2.5V), then that port's I/Os and controls will operate at 3.3V levels and VDDQX must be supplied at 3.3V. If OPT X is set to VSS (0V), then that port's I/Os and address controls will operate at 2.5V levels and VDDQX must be supplied at 2.5V. The OPT pins are independent of one another—both ports can operate at 3.3V levels, both can operate at 2.5V levels, or either can operate at 3.3V with the other at 2.5V. 3. When REPEATX is asserted, the counter will reset to the last valid address loaded via ADS X. 4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. All static inputs, i.e., PL/FTx and OPTx and the sleep mode pins themselves (ZZx) are not affected during sleep mode. It is recommended that boundary scan not be operated during sleep mode. 5. Chip Enables and Byte Enables are double buffered when PL/FT = VIH, i.e., the signals take two cycles to deselect.
6.42 4
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Truth Table I—Read/Write and Enable Control
OE X X X X X X X X X X X L L L L L L L H X CLK ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ X CE0 H L H L L L L L L L L L L L L L L L X X CE 1 L L H H H H H H H H H H H H H H H H X X BE3 X X X H H H H L H L L H H H L H L L X X BE2 X X X H H H L H H L L H H L H H L L X X BE1 X X X H H L H H L H L H L H H L H L X X BE0 X X X H L H H H L H L L H H H L H L X X R/W X X X X L L L L L L L H H H H H H H X X ZZ L X X L L L L L L L L L L L L L L L L H Byte 3 I/O27-35 High-Z Active Active High-Z High-Z High-Z High-Z DIN High-Z DIN DIN High-Z High-Z High-Z DOUT High-Z DOUT DOUT High-Z High-Z Byte 2 I/O18-26 High-Z Active Active High-Z High-Z High-Z DIN High-Z High-Z DIN DIN High-Z High-Z DOUT High-Z High-Z DOUT DOUT High-Z High-Z
(1,2,3,4)
Byte 1 I/O9-17 High-Z Active Active High-Z High-Z DIN High-Z High-Z DIN High-Z DIN High-Z DOUT High-Z High-Z DOUT High-Z DOUT High-Z High-Z Byte 0 I/O0-8 High-Z Active Active High-Z DIN High-Z High-Z High-Z DIN High-Z DIN DOUT High-Z High-Z High-Z DOUT High-Z DOUT High-Z High-Z MODE Deselected–Power Down Not Allowed Not Allowed All Bytes Deselected Write to Byte 0 Only Write to Byte 1 Only Write to Byte 2 Only Write to Byte 3 Only Write to Lower 2 Bytes Only Write to Upper 2 bytes Only Write to All Bytes Read Byte 0 Only Read Byte 1 Only Read Byte 2 Only Read Byte 3 Only Read Lower 2 Bytes Only Read Upper 2 Bytes Only Read All Bytes Outputs Disabled Sleep Mode
5682 tbl 02
NOTES: 1. "H" = V IH, "L" = VIL, "X" = Don't Care. 2. ADS , CNTEN, REPEAT = VIH. 3. OE and ZZ are asynchronous input signals. 4. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here.
Truth Table II—Address Counter Control
Address An X X X Previous Internal Address X An An + 1 X Internal Address Used An An + 1 An + 1 An CLK ↑ ↑ ↑ ↑ ADS L(4) H H X CNTEN X L
(5)
(1,2)
REPEAT(6) H H H L
(4)
I/O(3) DI/O (n) DI/O(n+1) DI/O(n+1) DI/O(n) External Address Used
MODE
Counter Enabled—Internal Address generation (7) External Address Blocked—Counter disabled (An + 1 reused) Counter Set to last valid ADS load
5682 tbl 03
H X
NOTES: 1. "H" = V IH, "L" = VIL, "X" = Don't Care. 2. Read and write operations are controlled by the appropriate setting of R/W, CE 0, CE1, BEn and OE. 3. Outputs configured in flow-through output mode: if outputs are in pipelined mode the data out will be delayed by one cycle. 4. ADS and REPEAT are independent of all other memory control signals including CE0, CE1 and BEn 5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other memory control signals including CE0, CE1, BEn. 6. When REPEAT is asserted, the counter will reset to the last valid address loaded via ADS. This value is not set at power-up: a known location should be loaded via ADS during initialization if desired. Any subsequent ADS access during operations will update the REPEAT address location. 7. Address A 19 must be managed as part of a full depth counter implementation using the IDT70T3509M. For physical addresses 00000H through 7FFFFH the value of a A19 is 0, while for physical addresses 80000H through FFFFF H the value of A19 is 1. The user needs to keep track of the device counter and make sure that A19 is actively driven from 0-to-1 or 1-to-0 and held as needed at the appropriate address boundaries for full depth counter operation and that A19 is in the appropriate state when using the REPEAT function.
6.42 5
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Recommended Operating Temperature and Supply Voltage
Grade Commercial Industrial Ambient Temperature 0OC to +70OC -40OC to +85OC GND 0V 0V VDD
(1)
2.5V + 100mV 2.5V + 100mV
5682 tbl 04
NOTES: 1. This is the parameter TA. This is the "instant on" case temperature.
Recommended DC Operating Conditions with VDDQ at 2.5V
Symbol VDD VDDQ VSS VIH Parameter Core Supply Voltage I/O Supply Voltage (3) Ground Input High Volltage (Address, Control & Data I/O Inputs)(3) Input High Voltage JTAG
_
Min. 2.4 2.4 0 1.7
Typ. 2.5 2.5 0
____
Max. 2.6 2.6 0 VDDQ + 100mV(2)
Unit V V V V
VIH VIH VIL VIL
1.7 VDD - 0.2V -0.3(1) -0.3(1)
____
VDD + 100mV(2) VDD + 100mV(2) 0.7 0.2
V V V V
5682 tbl 05a
Input High Voltage ZZ, OPT, PIPE/ FT Input Low Voltage Input Low Voltage ZZ, OPT, PIPE/ FT
____
____
____
NOTES: 1. VIL (min.) = -1.0V for pulse width less than tCYC /2 or 5ns, whichever is less. 2. VIH (max.) = VDDQ + 1.0V for pulse width less than tCYC /2 or 5ns, whichever is less. 3. To select operation at 2.5V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to Vss(0V), and V DDQX for that port must be supplied as indicated above.
Recommended DC Operating Conditions with VDDQ at 3.3V
Symbol VDD VDDQ VSS VIH Parameter Core Supply Voltage I/O Supply Voltage Ground Input High Voltage (Address, Control &Data I/O Inputs)(3) Input High Voltage JTAG
_ (3)
Min. 2.4 3.15 0 2.0
Typ. 2.5 3.3 0
____
Max. 2.6 3.45 0 VDDQ + 150mV(2)
Unit V V V V
VIH VIH VIL VIL
1.7 VDD - 0.2V -0.3(1) -0.3(1)
____
VDD + 100mV(2) VDD + 100mV(2) 0.8 0.2
V V V V
Input High Voltage ZZ, OPT, PIPE/ FT Input Low Voltage Input Low Voltage ZZ, OPT, PIPE/ FT
____
____
____
5682 tbl 05b
NOTES: 1. VIL (min.) = -1.0V for pulse width less than tCYC/2, or 5ns, whichever is less. 2. VIH (max.) = V DDQ + 1.0V for pulse width less than tCYC /2 or 5ns, whichever is less. 3. To select operation at 3.3V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VDD (2.5V), and VDDQX for that port must be supplied as indicated above.
6.42 6
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Absolute Maximum Ratings (1)
Symbol VTERM (VDD) VTERM(2) (VDDQ) VTERM(2) (INPUTS and I/O's) TBIAS(3) TSTG TJN Rating VDD Terminal Voltage with Respect to GND VDDQ Terminal Voltage with Respect to GND Input and I/O Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Junction Temperature Com'l & Ind -0.5 to 3.6 -0.3 to VDDQ + 0.3 -0.3 to VDDQ + 0.3 -55 to +125 -65 to +150 +150 50 40 Unit V V V
o o o
C C C
IOUT(For VDDQ = 3.3V) DC Output Current IOUT(For VDDQ = 2.5V) DC Output Current
mA mA
5682 tbl 06
NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. This is a steady-state DC parameter that applies after the power supply has reached its nominal operating value. Power sequencing is not necessary; however, the voltage on any Input or I/O pin cannot exceed VDDQ during power supply ramp up. 3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
Capacitance(1)
Symbol CIN COUT
(2)
(TA = +25°C, F = 1.0MHZ) BGA ONLY
Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 35 35 Unit pF pF
5682 tbl 07
NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. COUT also references CI/O.
DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 2.5V ± 100mV)
70T3509MS Symbol |ILI| |ILI| |ILO| VOL (3.3V) VOH (3.3V) VOL (2.5V) VOH (2.5V) Parameter Input Leakage Current(1) JTAG & ZZ Input Leakage Current Output Leakage Current Output Low Voltage
(1) (1) (1,3) (1,2)
Test Conditions VDDQ = Max., VIN = 0V to VDDQ VDD = Max., V IN = 0V to VDD CE0 = VIH and CE1 = VIL, VOUT = 0V to VDDQ IOL = + 4mA, VDDQ = Min. IOH = -4mA, V DDQ = Min. IOL = + 2mA, VDDQ = Min. IOH = -2mA, V DDQ = Min.
Min.
___
Max. 20 60 20 0.4
___
Unit µA µA µA V V V V
5682 tbl 08
___
___
___
Output High Voltage
2.4
___
Output Low Voltage (1) Output High Voltage (1)
0.4
___
2.0
NOTES: 1. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details. 2. Applicable only for TMS, TDI and TRST inputs. 3. Outputs tested in tri-state mode.
6.42 7
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (3) (VDD = 2.5V ± 100mV)
70T3509MS133 Com'l & Ind Symbol IDD Parameter Dynamic Operating Current (Both Ports Active) Standby Current (Both Ports - TTL Level Inputs) Standby Current (One Port - TTL Level Inputs) Full Standby Current (Both Ports - CMOS Level Inputs) Full Standby Current (One Port - CMOS Level Inputs) Sleep Mode Current (Both Ports - TTL Level Inputs) CEL and CER= VIL, Outputs Disabled, f = fMAX(1) CEL = CER = VIH f = fMAX(1) CE"A" = VIL and CE"B" = V IH(5) Active Port Outputs Disabled, f=fMAX(1) Both Ports CE0L = CE0R > VDD - 0.2V and CE1L = CE1R < 0.2V, VIN > V DDQ - 0.2V or VIN < 0.2V, f = 0(2) CE"A" < 0.2V and CE"B" > VDDQ - 0.2V(5) VIN > V DDQ - 0.2V or VIN < 0.2V Active Port, Outputs Disabled, f = fMAX(1) ZZL = ZZR = VIH f=fMAX(1) Test Condition Version COM'L IND COM'L IND COM'L IND COM'L IND COM'L IND COM'L IND S S S S S S S S S S S S Typ. (4) 800 800 560 560 680 680 20 20 680 680 20 20 Max. 1120 mA 1370 760 mA 940 880 mA 1090 60 mA 80 880 mA 1090 60 mA 80
5682 tbl 09
Unit
ISB1(6)
ISB2(6)
ISB3
ISB4(6)
Izz
NOTES: 1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC , using "AC TEST CONDITIONS". 2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby. 3. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 4. VDD = 2.5V, TA = 25°C for Typ, and are not production tested. IDD DC(f=0) = 30mA (Typ). 5. CEX = VIL means CE0X = VIL and CE1X = VIH (enabled) CEX = VIH means CE0X = VIH and CE1X = VIL (disabled) CEX < 0.2V means CE0X < 0.2V and CE1X > VDD - 0.2V (enabled - CMOS levels) CEX > VDD - 0.2V means CE0X > VDD - 0.2V and CE1X < 0.2V (disabled - CMOS levels) "X" represents "L" for left port or "R" for right port. 6. ISB1, I SB2 and ISB4 will all reach full standby levels (ISB3) on the appropriate port(s) if ZZL and/or ZZR = VIH.
6.42 8
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
AC Test Conditions (VDDQ - 3.3V/2.5V)
Input Pulse Levels (Address & Controls) Input Pulse Levels (I/Os) Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND to 3.0V/GND to 2.4V GND to 3.0V/GND to 2.4V 2ns 1.5V/1.25V 1.5V/1.25V Figure 1
5682 tbl 10
50Ω DATAOUT
50Ω 1.5V/1.25 10pF (Tester)
,
5682 drw 03
Figure 1. AC Output Test load.
∆ tCD
(Typical, ns)
∆ Capacitance (pF) from AC Test Load
5682 drw 04
6.42 9
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
AC Electrical Characteristics Over the Operating Temperature Range (Read and Write Cycle Timing) (2,3) (VDD = 2.5V ± 100mV, TA = 0°C to +70°C)
70T3509MS133 Com'l & Ind
Symbol tCYC1 tCYC2 tCH1 tCL1 tCH2 tCL2 tSA tHA tSC tHC tSB tHB tSW tHW tSD tHD tSAD tHAD tSCN tHCN tSRPT tHRPT tOE tOLZ(4) tOHZ(4) tCD1 tCD2 tDC tCKHZ(4) tCKLZ(4) tINS tINR tCOLS tCOLR tZZSC tZZRC Clock Cycle Time (Flow-Through) Clock Cycle Time (Pipelined)(1) Clock High Time (Flow-Through)(1) Clock Low Time (Flow-Through)(1) Clock High Time (Pipelined)(2) Clock Low Time (Pipelined) Address Setup Time Address Hold Time Chip Enable Setup Time Chip Enable Hold Time Byte Enable Setup Time Byte Enable Hold Time R/W Setup Time R/W Hold Time Input Data Setup Time Input Data Hold Time ADS S etup Time ADS Hold Time CNTEN Setup Time CNTEN Hold Time REPEAT Setup Time REPEAT Hold Time Output Enable to Data Valid Output Enable to Output Low-Z Output Enable to Output High-Z Clock to Data Valid (Flow-Through)(1) Clock to Data Valid (Pipelined)(1) Data Output Hold After Clock High Clock High to Output High-Z Clock High to Output Low-Z Interrupt Flag Set Time Interrupt Flag Reset Time Collision Flag Set Time Collision Flag Reset Time Sleep Mode Set Cycles Sleep Mode Recovery Cycles
(1) (1)
Parameter
Min. 25 7.5 10 10 3 3 1.8 0.5 1.8 0.5 1.8 0.5 1.8 0.5 1.8 0.5 1.8 0.5 1.8 0.5 1.8 0.5
____
Max.
____ ____
Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns cycles cycles
____ ____
____ ____
____ ____
____ ____ ____
____ ____
____ ____
____
____
____
____
____
____
____
4.6
____
1 1
____ ____
4.2 15 4.2
____
1 1 1
____
4.2
____
7 7 4.2 4.2
____ ____
____ ____ ____
2 3
Port-to-Port Delay tCO Clock-to-Clock Offset 6
____
ns
5682 tbl 11
NOTES: 1. The Pipelined output parameters (tCYC2, tCD2) apply to either or both left and right ports when FT/PIPEX = VDD (2.5V). Flow-through parameters (tCYC1, tCD1) apply when FT/PIPE = Vss (0V) for that port. 2. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE), FT/PIPE and OPT. FT/PIPE and OPT should be treated as DC signals, i.e. steady state during operation. 3. These values are valid for either level of VDDQ (3.3V/2.5V). See page 6 for details on selecting the desired operating voltage levels for each port. 4. Guaranteed by design (not production tested).
6.42 10
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Timing Waveform of Read Cycle for Pipelined Operation (FT/PIPE'X' = VIH)(1,2)
tCYC2 tCH2 CLK
CE0
tCL2
tSC CE1 tSB
BEn
tHC
tSC
(3)
tHC
tHB
tSB
(5)
tHB
R/W
tSW tHW tSA tHA An + 1 (1 Latency) tCD2 Qn tCKLZ
(1)
ADDRESS
(4)
An
An + 2 tDC Qn + 1
An + 3
DATAOUT
Qn + 2 tOLZ
(5)
tOHZ
OE
(1)
tOE
5682 drw 05
,
Timing Waveform of Read Cycle for Flow-Through Output (FT/PIPE"X" = VIL)(1,2,6)
tCYC1 tCH1 CLK
CE0
tCL1
tSC CE1 tSB
BEn
tHC
tSC
(3)
tHC
tHB tSB tHB
R/W
tSW tHW tSA tHA An + 1 tCD1 tDC Qn tCKLZ Qn + 1 tOHZ tOLZ Qn + 2 An + 2 An + 3 tCKHZ
(5)
ADDRESS
(4)
An
DATAOUT
tDC
OE
(1)
5682 drw 06 NOTES: 1. OE is asynchronously controlled; all other inputs depicted in the above waveforms are synchronous to the rising clock edge. 2. ADS = VIL, CNTEN and REPEAT = VIH. 3. The output is disabled (High-Impedance state) by CE0 = VIH, CE1 = VIL, BEn = VIH following the next rising edge of the clock. Refer to Truth Table 1. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. If BEn was HIGH, then the appropriate Byte of DATAOUT for Qn + 2 would be disabled (High-Impedance state). 6. "x" denotes Left or Right port. The diagram is with respect to that port.
tOE
,
6.42 11
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Timing Waveform of Left Port Write to Pipelined Right Port Read(1,2,4)
CLK"A" tSW R/W"A
"
tHW
tSA ADDRESS"A"
tHA
NO MATCH
MATCH
tSD DATAIN"A"
tHD
VALID
tCO(3) CLK"B" tCD2 R/W"B" tSW tSA ADDRESS"B" tHW tHA
NO MATCH
MATCH
DATAOUT"B"
VALID
5682 drw 09 NOTES: 1. CE0, BEn, and ADS = VIL; CE1, CNTEN , and REPEAT = VIH. 2. OE = VIL for Port "B", which is being read from. OE = VIH for Port "A", which is being written to. 3. If tCO < minimum specified, then data from Port "B" read is not valid until following Port "B" clock cycle (ie, time from write to valid read on opposite port will be tCO + 2 tCYC2 + tCD2 ). If tCO > minimum, then data from Port "B" read is available on first Port "B" clock cycle (ie, time from write to valid read on opposite port will be tCO + t CYC2 + t CD2). 4. All timing is the same for Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite of Port "A"
tDC
,
Timing Waveform with Port-to-Port Flow-Through Read(1,2,4)
CLK "A" tSW tHW R/W "A" tSA ADDRESS "A" tHA
NO MATCH
MATCH
tSD DATAIN
"A"
tHD
VALID
tCO CLK "B"
(3)
tCD1 R/W "B" tSW tSA ADDRESS "B" tHW tHA
NO MATCH
MATCH
tCD1 DATAOUT "B" tDC
VALID VALID
tDC
,
5682 drw 10 NOTES: 1. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. 2. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to. 3. If tCO < minimum specified, then data from Port "B" read is not valid until following Port "B" clock cycle (i.e., time from write to valid read on opposite port will be tCO + t CYC + tCD1 ). If tCO > minimum, then data from Port "B" read is available on first Port "B" clock cycle (i.e., time from write to valid read on opposite port will be tCO + t CD1). 4. All timing is the same for both left and right ports. Port "A" may be either left or right port. Port "B" is the opposite of Port "A".
6.42 12
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Timing Waveform of Pipelined Read-to-Write-to-Read (OE = VIL)(2)
tCYC2 tCH2 tCL2 CLK
CE0
tSC tHC CE1 tSB
BEn
tHB
tSW tHW R/W tSW tHW
ADDRESS
(3)
An tSA tHA
An +1
An + 2
An + 2 tSD tHD Dn + 2
An + 3
An + 4
DATAIN
(1)
tCD2 Qn
tCKHZ
tCKLZ
tCD2 Qn + 3
DATAOUT READ
NOP
(4)
WRITE
READ
5682 drw 11 NOTES: 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE 0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. "NOP" is "No Operation". 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
,
Timing Waveform of Pipelined Read-to-Write-to-Read ( OE Controlled)(2)
tCH2 CLK
CE0
tCYC2 tCL2
tSC tHC CE1 tSB
BEn
tHB
tSW tHW R/W tSW tHW
ADDRESS
(3)
An tSA tHA
An +1
An + 2 tSD tHD
An + 3
An + 4
An + 5
DATAIN
(1)
tCD2 Qn tOHZ
(4)
Dn + 2
Dn + 3
tCKLZ
tCD2 Qn + 4
DATAOUT
OE
, NOTES: 5682 drw 12 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE 0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. This timing does not meet requirements for fastest speed grade. This waveform indicates how logically it could be done if timing so allows.
READ
WRITE
READ
6.42 13
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Timing Waveform of Flow-Through Read-to-Write-to-Read (OE = VIL)(2)
tCH1 CLK tCYC1 tCL1
CE0
tSC tHC CE1 tSB
BEn
tHB
tSW tHW R/W tSW tHW
ADDRESS
(3)
An tSA tHA
An +1
An + 2
An + 2 tSD tHD
An + 3
An + 4
DATAIN
(1)
Dn + 2 tCD1 Qn tDC READ tCD1 Qn + 1 tCKHZ (5) NOP tCKLZ WRITE tCD1 tCD1 Qn + 3 tDC READ
5682 drw 13
DATAOUT
,
Timing Waveform of Flow-Through Read-to-Write-to-Read (OE Controlled)(2)
tCYC1 tCH1 tCL1 CLK
CE0
tSC tHC CE1 tSB
BEn
tHB
tSW tHW R/W ADDRESS
(3)
tSW tHW An tSA tHA An +1 An + 2 tSD tHD Dn + 2
(1)
An + 3
An + 4
An + 5
DATAIN tCD1 Qn tOHZ
OE
Dn + 3
tDC
tOE tCD1 tCKLZ
tCD1 Qn + 4 tDC
DATAOUT
READ WRITE READ 5682 drw 14 NOTES: 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
,
6.42 14
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Timing Waveform of Pipelined Read with Address Counter Advance(1)
tCH2 CLK tSA A0 - A18 A19(3) tSAD tHAD
ADS
tCYC2 tCL2
tHA
An tSA
tSAD tHAD
CNTEN
t SCN tHCN tCD2
DATAOUT
Qx - 1(2)
Qx tDC
Qn
(3)
Qn + 1
Qn + 2(2)
,
Qn + 3
READ EXTERNAL ADDRESS
READ WITH COUNTER
COUNTER HOLD
READ WITH COUNTER
5682 drw 15a
Timing Waveform of Flow-Through Read with Address Counter Advance(1)
tCYC1 tCH1 tCL1 CLK tSA A0 - A18 tHA
An tSA
A19(3) tSAD tHAD
ADS
tSAD tHAD tSCN tHCN
CNTEN
tCD1 DATAOUT Qx(2) tDC READ EXTERNAL ADDRESS Qn Qn + 1
(3)
Qn + 2
Qn + 3(2)
Qn + 4
,
READ WITH COUNTER
COUNTER HOLD
READ WITH COUNTER
5682 drw 16a
NOTES: 1. CE 0, OE, BEn = VIL; CE1, R/W, and REPEAT = V IH. 2. If there is no address change via ADS = VIL (loading a new address) or CNTEN = VIL (advancing the address), i.e. ADS = VIH and CNTEN = VIH, then the data remains constant for subsequent clocks. 3. Address A19 must be managed as part of a full depth counter implementation using the IDT70T3509M. For physical addresses 00000H through 7FFFFH the value of a A19 is 0, while for physical addresses 80000H through FFFFFH the value of A19 is 1. The user needs to keep track of the device counter and make sure that A19 is actively driven from 0-to-1 or 1-to-0 and held as needed at the appropriate address boundaries for full depth counter operation. As shown this transition reflects An = 7FFFF H or FFFFFH.
6.42 15
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Timing Waveform of Write with Address Counter Advance (Flow-through or Pipelined Inputs)(1)
tCH2 CLK tSA A0 - A18 tHA tCYC2 tCL2
An tSA
A19(7)
INTERNAL(3) ADDRESS tSAD tHAD
ADS
An(5)
An + 1
An + 2
An + 3
An + 4
tSCN tHCN
CNTEN
(5)
tSD tHD DATAIN Dn WRITE EXTERNAL ADDRESS Dn + 1
(7)
Dn + 1
Dn + 2
Dn + 3
Dn + 4
WRITE WRITE WITH COUNTER COUNTER HOLD
WRITE WITH COUNTER
5682 drw 17a
Timing Waveform of Counter Repeat(2,6)
tCYC2 CLK tSA tHA A0 - A18 An tSA A19(7)
INTERNAL(3) ADDRESS
ADS
An tSAD tHAD tSW tHW
An+1
An+2
An+2
An
An+1
An+2
An+2
R/W tSCN tHCN
CNTEN
(4)
REPEAT
tSRPT tHRPT tSD tHD DATAIN D0 D1 D2 D3 tCD1 DATAOUT
(7)
,
An WRITE TO ADS ADDRESS An ADVANCE COUNTER WRITE TO An+1 ADVANCE COUNTER WRITE TO An+2 HOLD COUNTER WRITE TO An+2 REPEAT READ LAST ADS ADDRESS An
An+1 ADVANCE COUNTER READ An+1
An+2
,
An+2 HOLD COUNTER READ An+2
ADVANCE COUNTER READ An+2
NOTES: 5682 drw 18a 1. CE0, BEn, and R/W = VIL; CE1 and REPEAT = VIH. 2. CE0, BEn = VIL; CE1 = VIH. 3. The "Internal Address" is equal to the "External Address" when ADS = VIL and equals the counter output when ADS = VIH. 4. No dead cycle exists during REPEAT operation. A READ or WRITE cycle may be coincidental with the counter REPEAT cycle: Address loaded by last valid ADS load will be accessed. For more information on REPEAT function refer to Truth Table II. A19 must be in the appropriate state when using the REPEAT function to guarantee the correct address location is loaded. 5. CNTEN = VIL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance. The ‘An +1’Address is written to during this cycle. 6. For Pipelined Mode user should add 1 cycle latency for outputs as per timing waveform of read cycle for pipelined operations. 7. Address A19 must be managed as part of a full depth counter implementation using the IDT70T3509M. For physical addresses 00000H through 7FFFFH the value of a A19 is 0, while for physical addresses 80000H through FFFFFH the value of A19 is 1. The user needs to keep track of the device counter and make sure that A19 is actively driven from 0-to-1 or 1-to-0 and held as needed at the appropriate address boundaries for full depth counter operation. As shown this transition reflects An = 7FFFFH or FFFFFH.
6.42 16
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Waveform of Interrupt Timing(2)
CLKL tSW R/WL tSA ADDRESSL(3) tHA tHW
FFFFF
tSC CEL(1)
tHC
tINS INT R
CLKR tSC CER(1) tHC
tINR
R/WR tSW tSA ADDRESS
R(3)
tHW tHA
FFFFF
5682 drw 19
NOTES: 1. CE 0 = VIL and CE1 = V IH. 2. All timing is the same for Left and Right ports. 3. Address is for internal register, not the external bus, i.e. address needs to be qualified by one of the Address counter control signals.
Truth Table III - Interrupt Flag(1)
Left Port CLKL ↑ ↑ ↑ ↑ R/WL L X X H
(2)
Right Port A19L-A0L FFFFF X X FFFFE INT L X X L H CLKR ↑ ↑ ↑ ↑ R/WR X H L X
(2)
CEL L X X L
(2)
CER(2) X L L X
A19R-A0R X FFFFF FFFFE X
INTR L H X X
Function Set Right INT R Flag Reset Right INT R Flag Set Left INTL Flag Reset Left INTL Flag
5682 tbl 12
NOTES: 1. INT L and INTR must be initialized at power-up by Resetting the flags. 2. CE 0 = VIL and CE1 = V IH, R/W and CE are synchronous with respect to the clock and need valid set-up and hold times. 3. Address is for internal register, not the external bus, i.e. address needs to be qualified by one of the Address counter control signals.
6.42 17
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Timing Waveform - Entering Sleep Mode (1,2)
R/W
(3)
Timing Waveform - Exiting Sleep Mode
(1,2)
An
An+1
(5)
R/W
OE
(5)
DATAOUT
Dn
Dn+1
(4)
NOTES: 1. CE1 = V IH. 2. All timing is same for Left and Right ports. 3. CE0 has to be deactivated (CE0 = VIH) three cycles prior to asserting ZZ (ZZx = VIH) and held for two cycles after asserting ZZ (ZZx = V IH). 4. CE0 has to be deactivated (CE0 = VIH) one cycle prior to de-asserting ZZ (ZZx = V IL) and held for three cycles after de-asserting ZZ (ZZx = VIL). 5. The device must be in Read Mode (R/W High) when exiting sleep mode. Outputs are active but data is not valid until the following cycle.
6.42 18
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Functional Description
The IDT70T3509M provides a true synchronous Dual-Port Static RAM interface. Registered inputs provide minimal set-up and hold times on address, data, and all critical control inputs. All internal registers are clocked on the rising edge of the clock signal, however, the self-timed internal write pulse width is independent of the cycle time. An asynchronous output enable is provided to ease asynchronous bus interfacing. Counter enable inputs are also provided to stall the operation of the address counters for fast interleaved memory applications. The combination of a HIGH on CE0 and a LOW on CE1 for one clock cycle will power down the internal circuitry to reduce static power consumption. Multiple chip enables allow easier banking of multiple IDT70T3509Ms for depth expansion configurations. Two cycles are required with CE0 LOW and CE1 HIGH to re-activate the outputs.
Sleep Mode
The IDT70T3509M is equipped with an optional sleep or low power mode on both ports. The sleep mode pin on both ports is asynchronous and active high. During normal operation, the ZZ pin is pulled low. When ZZ is pulled high, the port will enter sleep mode where it will meet lowest possible power conditions. The sleep mode timing diagram shows the modes of operation: Normal Operation, No Read/Write Allowed and Sleep Mode. For normal operation all inputs must meet setup and hold times prior to sleep and after recovering from sleep. Clocks must also meet cycle high and low times during these periods. Three cycles prior to asserting ZZ (ZZx = VIH) and three cycles after de-asserting ZZ (ZZx = VIL), the device must be disabled via the chip enable pins. If a write or read operation occurs during these periods, the memory array may be corrupted. Validity of data out from the RAM cannot be guaranteed immediately after ZZ is asserted (prior to being in sleep). When exiting sleep mode, the device must be in Read mode (R/Wx = VIH)when chip enable is asserted, and the chip enable must be valid for one full cycle before a read will result in the output of valid data. During sleep mode the RAM automatically deselects itself. The RAM disconnects its internal clock buffer. The external clock may continue to run without impacting the RAMs sleep current (IZZ). All outputs will remain in high-Z state while in sleep mode. All inputs are allowed to toggle. The RAM will not be selected and will not perform any reads or writes.
Width Expansion
The IDT70T3509M can be used in applications requiring expanded width. Through combining the control signals, the devices can be grouped as necessary to accommodate applications needing 72-bits or wider.
6.42 19
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
JTAG Functionality and Configuration
The IDT70T3509M is composed of four independent memory arrays, and thus cannot be treated as a single JTAG device in the scan chain. The four arrays (A, B, C and D) each have identical characteristics and commands but must be treated as separate entities in JTAG operations. Please refer to Figure 2. JTAG signaling must be provided serially to each array and utilize the information provided in the Identification Register Definitions, Scan Register Sizes, and System Interface Parameter tables. Specifically, all serial commands must be issued to the IDT70T3509M in the following sequence: Array D, Array C, Array B, Array A. Please reference Application Note AN-411, "JTAG Testing of Multichip Modules" for specific instructions on performing JTAG testing on the IDT70T3509M. AN-411 is available at www.idt.com.
IDT70T3509M
Array B
TDIB TDOA
TDOB TDIC
Array C
TDOC TDID
Array A
TDI
Array D
TDO
TCK TMS TRST
5682 drw 24
Figure 2. JTAG Configuration for IDT70T3509M
6.42 20
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
JTAG Timing Specifications
tJF TCK tJCL tJCYC tJR tJCH
Device Inputs(1)/ TDI/TMS tJS D evice Outputs(2)/ TDO TRST tJRST NOTES: 1. Device inputs = All device inputs except TDI, TMS, and TRST. 2. Device outputs = All device outputs except TDO.
Figure 5. Standard JTAG Timing
5682 drw 25
tJH
tJDC
tJRSR
tJCD ,
JTAG AC Electrical Characteristics (1,2,3,4)
70T3509M Symbol tJCYC tJCH tJCL tJR tJF tJRST tJRSR tJCD tJDC tJS tJH Parameter JTAG Clock Input Period JTAG Clock HIGH JTAG Clock Low JTAG Clock Rise Time JTAG Clock Fall Time JTAG Reset JTAG Reset Recovery JTAG Data Output JTAG Data Output Hold JTAG Setup JTAG Hold Min. 100 40 40
____
Max.
____
Units ns ns ns ns ns ns ns ns ns ns ns
5682 tbl 15
____ ____
3 3
(1) (1)
____
50 50
____
____
____
25
____ ____
0 15 15
____
NOTES: 1. Guaranteed by design. 2. 30pF loading on external output signals. 3. Refer to AC Electrical Test Conditions stated earlier in this document. 4. JTAG operations occur at one speed (10MHz). The base device may run at any speed specified in this datasheet.
6.42 21
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Identification Register Definitions
Instruction Field Array D
Revision Number (31:28) IDT Device ID (27:12) IDT JEDEC ID (11:1) ID Register Indicator Bit (Bit 0)
Value
Array D 0x0
Instruction Field Array C
Revision Number (63:60)
Value
Array C 0x0
Instruction Field Array B
Revision Number (95:92)
Value
Array B 0x0
Instruction Field Array A
Revision Number (127:124)
Value
Array A 0x0
Description
Reserved for Version number
0x333 IDT Device ID (59:44) 0x33 IDT JEDEC ID (43:33) 1 ID Register Indicator Bit (Bit 32)
0x333 IDT Device ID (91:76) 0x33 1 IDT JEDEC ID (75:65) ID Register Indicator Bit (Bit 64)
0x333 IDT Device ID (123:108) 0x33 1 IDT JEDEC ID (107:97) ID Register Indicator Bit (Bit 96)
0x333 Defines IDT Part number 0x33 1 Allows unique identification of device vendor as IDT Indicates the presence of an ID Register
5682 tbl 16
Scan Register Sizes
Register Name Instruction (IR) Bypass (BYR) Identification (IDR) Boundary Scan (BSR) Bit Size Array A 4 1 32 Note (3) Bit Size Array B 4 1 32 Note (3) Bit Size Array C 4 1 32 Note (3) Bit Size Array D 4 1 32 Note (3) Bit Size 70T3509M 16 4 128 Note (3)
5682 tbl 17
System Interface Parameters
Instruction EXTEST BYPASS IDCODE Code 0000000000000000 1111111111111111 0010001000100010 0100010001000100 Description Forces contents of the boundary scan cells onto the device outputs(1). Places the boundary scan register (BSR) between TDI and TDO. Places the bypass register (BYR) between TDI and TDO. Loads the ID register (IDR) with the vendor ID code and places the register between TDI and TDO. Places the bypass register (BYR) between TDI and TDO. Forces all device output drivers except INTx to a High-Z state. Uses BYR. Forces contents of the boundary scan cells onto the device outputs. Places the bypass register (BYR) between TDI and TDO. Places the boundary scan register (BSR) between TDI and TDO. SAMPLE allows data from device inputs (2) to be captured in the boundary scan cells and shifted serially through TDO. PRELOAD allows data to be input serially into the boundary scan cells via the TDI.
HIGHZ CLAMP SAMPLE/PRELOAD
0011001100110011 0001000100010001
RESERVED
0101010101010101, 0111011101110111, Several combinations are reserved. Do not use codes other than those 1000100010001000, 1001100110011001, identified above. 1010101010101010, 1011101110111011, 1100110011001100 0110011001100110,1110111011101110, 1101110111011101 For internal use only.
5682 tbl 18
PRIVATE
NOTES: 1. Device outputs = All device outputs except TDO. 2. Device inputs = All device inputs except TDI, TMS, and TRST . 3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local IDT sales representative.
6.42 22
IDT70T3509M High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Ordering Information
IDT XXXX X Device Type
A Power
999 Speed
A Package
A
A Process/ Temperature Range
Blank I(1) G(2) BP(3)
Commercial (0°C to +70°C) Industrial (-40°C to +85°C) Green
256-pin BGA (BP-256)
133
Commercial and Industrial Speed in Megahertz
S
Standard Power
70T3509M
36Mbit (1024K x 36) 2.5V Synchronous Dual-Port RAM
5682 drw 26
NOTES:
1. Contact your local sales office for Industrial temp range in other speeds, packages and powers. 2. Green parts available. For specific speeds, packages and powers contact your local sales office. 3. BP-256 package thickness is 1.76mm nominal. This is thicker than the BC-256 package (1.40mm nominal) used for the lower density IDT dual-port products.
Datasheet Document History:
11/09/04: 03/24/05: Initial Public Release of Preliminary Datasheet Page 1 Added I-temp offering to features Page 6 Added I-temp information to the Recommended Operating Temperature and Supply Voltage table Page 8 Added I-temp values to the DC Electrical Characteristics table Page 10 Added I-temp to the heading of the AC Electrical Characteristics table Page 23 Added I-temp to ordering information Page 1 Added green availability to features Page 1 - 23 Removed Preliminary status Page 1 Added feature to highlight footprint compatibility Page 3 & 23 Added a footnote to highlight package thickness of BP-256 vs. BC-256 Page 1 Functional Block Diagram changed to correct chip enable logic and added footnote 2 referencing Truth Table I
06/14/05: 08/27/07:
CORPORATE HEADQUARTERS 6024 Silver Creek Valley Road San Jose, CA 95138
for SALES: 800-345-7015 or 408-284-8200 fax: 408-284-2775 www.idt.com
for Tech Support: 408-284-2794 DualPortHelp@idt.com
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
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