IDT70T653MS15BC

Features ◆ ◆ HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE ◆ PRELIMINARY IDT70T653M ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns (max.) – Industrial: 12ns (max.) RapidWrite Mode simplifies high-speed consecutive write cycles Dual chip enables allow for depth expansion without external logic IDT70T653M easily expands data bus width to 72 bits or more using the Busy Input when cascading more than one device Busy input for port contention management Interrupt Flags ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Full on-chip hardware support of semaphore signaling between ports Fully asynchronous operation from either port Separate byte controls for multiplexed bus and bus matching compatibility Sleep Mode Inputs on both ports Single 2.5V (±100mV) power supply for core LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port Includes JTAG functionality Available in a 256-ball Ball Grid Array Industrial temperature range (–40°C to +85°C) is available for selected speeds Functional Block Diagram BE3L BE2L BE1L BE0L BE 3R BE2R BE 1R BE0R R/W L CE0L CE1L BB EE 01 LL BB EE 23 LL BBBB EEEE 3210 R RRR R/WR CE0R CE1R OEL Dout0-8_L Dout0-8_R Dout9-17_L Dout9-17_R Dout18-26_L Dout18-26_R Dout27-35_L Dout27-35_R OER 512K x 36 MEMORY ARRAY I/O0L- I/O 35L Di n_L Di n_R I/O 0R - I/O 35R A18L A0L Address Decoder ADDR_L ADDR_R Address Decoder A18R A0R CE0L CE1L OEL R/WL BUSYL SEM L INTL(1) ZZL(2) ARBITRATION INTERRUPT SEMAPHORE LOGIC OE R R/WR CE0R CE1R TDI TD O JTAG TC K TMS TRST BUSYR SEMR INT R(1) ZZ CONTROL LOGIC ZZ R(2) NOTES: 1. INT is non-tri-state totem-pole outputs (push-pull). 2. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx, INTx and the sleep mode pins themselves (ZZx) are not affected during sleep mode. 5679 drw 01 NOVEMBER 2003 DSC-5679/2 1 ©2003 Integrated Device Technology, Inc. I DT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges The IDT70T653M is a high-speed 512K x 36 Asynchronous DualPort Static RAM. The IDT70T653M is designed to be used as a standalone 18874K-bit Dual-Port RAM. This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. Description The IDT70T653M has a RapidWrite Mode which allows the designer to perform back-to-back write operations without pulsing the R/W input each cycle. This is especially significant at the 10ns cycle time of the IDT70T653M, easing design considerations at these high performance levels. The 70T653M can support an operating voltage of either 3.3V or 2.5V on one or both ports, controlled by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. 2 IDT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges Pin Configuration(1,2,3) 70T653M BC BC-256(4,5) 256-Pin BGA Top View A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 10/07/03 A1 NC B1 TDI B2 NC B3 A17L A14L B4 B5 A11L B6 A 8L B7 BE2L B8 CE1L B9 OEL B10 INTL B11 A5L B12 A2L B13 A0L B14 NC B15 NC B16 I/O18L C1 NC C2 TDO C3 A18L C4 A15L C5 A12L C6 A 9L C7 BE3L C8 CE0L R/WL C9 C10 NC C11 A4L C12 A1L C13 NC C14 I/O17L C15 NC C16 I/O18R I/O19L VSS D1 D2 D3 A16L D4 A13L D5 A10L D6 A7L D7 BE1L BE0L SEML BUSYL A6L D8 D9 D10 D11 D12 A3L D13 OPTL I/O17R I/O16L D14 D15 D16 I/O20R I/O19R I/O20L E1 E2 E3 VDD E4 VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDD I/O15R I/O15L I/O16R E5 E6 E7 E8 E9 E10 E11 E12 E13 E14 E15 E16 I/O21R I/O21L I/O22L VDDQL VDD F1 F2 F3 F4 F5 VDD F6 VSS F7 VSS F8 V SS F9 VSS F10 VDD F11 VDD VDDQR I/O13L I/O14L I/O14R F12 F13 F14 F15 F16 I/O23L I/O22R I/O23R VDDQL VDD G1 G2 G3 G4 G5 NC G6 VSS G7 VSS G8 V SS G9 VSS G10 VSS G11 VDD VDDQR I/O12R I/O13R I/O12L G12 G13 G14 G15 G16 I/O24R I/O24L I/O25L VDDQR VSS H1 H2 H3 H4 H5 VSS H6 VSS H7 VSS H8 V SS H9 VSS H10 VSS H11 VSS H12 VDDQL I/O10L I/O11L I/O11R H13 H14 H15 H16 I/O26L I/O25R I/O26R VDDQR VSS J1 J2 J3 J4 J5 VSS J6 VSS J7 VSS J8 VSS J9 V SS J10 VSS J11 VSS J12 VDDQL I/O9R J13 J14 IO9L I/O10R J15 J16 I/O27L I/O28R I/O27R VDDQL ZZR K1 K2 K3 K4 K5 VSS K6 VSS K7 VSS K8 V SS K9 VSS K10 VSS K11 ZZL VDDQR I/O8R I/O7R I/O8L K12 K13 K14 K15 K16 I/O29R I/O29L I/O28L VDDQL VSS L1 L2 L3 L4 L5 VSS L6 VSS L7 VSS L8 VSS L9 VSS L10 VSS L11 VSS L12 VDDQR I/O6R I/O6L I/O7L L13 L14 L15 L16 I/O30L I/O31R I/O30R VDDQR VDD M1 M2 M3 M4 M5 NC M6 VSS M7 VSS M8 V SS M9 V SS M10 VSS M11 VDD M12 VDDQL I/O5L M13 M14 I/O4R I/O5R M15 M16 I/O32R I/O32L I/O31L VDDQR N1 N2 N3 N4 VDD N5 VDD N6 VSS N7 VSS N8 VSS N9 VSS N10 VDD N11 VDD VDDQL I/O3R I/O3L I/O4L N12 N13 N14 N15 N16 I/O33L I/O34R I/O33R VDD VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL VDD P1 P2 P3 P4 P5 P6 P7 P8 P9 P10 P11 P12 P13 I/O2L P14 I/O1R I/O2R P15 P16 I/O35R I/O34L TMS R1 R2 R3 A16R R4 A13R R5 A10R R6 A7R R7 BE1R BE0R SEMR BUSYR R8 R9 R10 R11 A6R R12 A3R R13 I/O0L I/O0R R14 R15 I/O1L R16 I/O35L T1 NC T2 TRST A18R T3 T4 A15R T5 A12R T6 A9R T7 BE3R CE0R R/WR T8 T9 T10 VSS T11 A4R T12 A1R T13 OPTR T14 NC T15 NC T16 , NC TCK NC A17R A14R A11R A8R BE2R CE1R OER INT R A5R A2R A0R NC NC 5679 drw 02f NOTES: 1. All VDD pins must be connected to 2.5V power supply. 2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VDD (2.5V), and 2.5V if OPT pin for that port is set to VSS (0V). 3. All VSS pins must be connected to ground supply. 4. Package body is approximately 17mm x 17mm x 1.4mm, with 1.0mm ball-pitch. 5. This package code is used to reference the package diagram. , 3 I DT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges Pin Names Left Port CE0L, CE1L R/WL OEL A0L - A18L I/O0L - I/O35L SEML INTL BUSYL BE0L - BE3L VDDQL OPTL ZZL VDD VSS TDI TDO TCK TMS TRST Right Port CE0R, CE1R R/WR OER A0R - A18R I/O0R - I/O35R SEMR INTR BUSYR BE0R - BE3R VDDQR OPTR ZZR Names Chip Enables (Input) Read/Write Enable (Input) Output Enable (Input) Address (Input) Data Input/Output Semaphore Enable (Input) Interrupt Flag (Output) Busy Input Byte Enables (9-bit bytes) (Input) Power (I/O Bus) (3.3V or 2.5V)(1) (Input) Option for selecting VDDQX(1,2) (Input) Sleep Mode Pin(3) (Input) Power (2.5V)(1) (Input) Ground (0V) (Input) Test Data Input Test Data Output Test Logic Clock (10MHz) (Input) Test Mode Select (Input) Reset (Initialize TAP Controller) (Input) 5679 tbl 01 NOTES: 1. VDD, OPTX, and VDDQX must be set to appropriate operating levels prior to applying inputs on I/OX. 2. OPTX selects the operating voltage levels for the I/Os and controls on that port. If OPTX is set to VDD (2.5V), then that port's I/Os and controls will operate at 3.3V levels and VDDQX must be supplied at 3.3V. If OPT X is set to VSS (0V), then that port's I/Os and controls will operate at 2.5V levels and VDDQX must be supplied at 2.5V. The OPT pins are independent of one another—both ports can operate at 3.3V levels, both can operate at 2.5V levels, or either can operate at 3.3V with the other at 2.5V. 3. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx, INTx and the sleep mode pins themselves (ZZx) are not affected during sleep mode. It is recommended that boundry scan not be operated during sleep mode. 4 IDT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges Truth Table I—Read/Write and Enable Control(1,2) OE X X X X X X X X X X L L L L L L L H X SEM H H H H H H H H H H H H H H H H H H X CE 0 H X L L L L L L L L L L L L L L L L X CE 1 X L H H H H H H H H H H H H H H H H X BE3 X X H H H H L H L L H H H L H L L L X BE2 X X H H H L H H L L H H L H H L L L X BE1 X X H H L H H L H L H L H H L H L L X BE0 X X H L H H H L H L L H H H L H L L X R/W X X X L L L L L L L H H H H H H H X X ZZ L L L L L L L L L L L L L L L L L L H Byte 3 I/O27-35 High-Z High-Z High-Z High-Z High-Z High-Z DIN High-Z DIN DIN High-Z High-Z High-Z DOUT High-Z DOUT DOUT High-Z High-Z Byte 2 I/O18-26 High-Z High-Z High-Z High-Z High-Z DIN High-Z High-Z DIN DIN High-Z High-Z DOUT High-Z High-Z DOUT DOUT High-Z High-Z Byte 1 I/O9-17 High-Z High-Z High-Z High-Z DIN High-Z High-Z DIN High-Z DIN High-Z DOUT High-Z High-Z DOUT High-Z DOUT High-Z High-Z Byte 0 I/O0-8 High-Z High-Z High-Z DIN High-Z High-Z High-Z DIN High-Z DIN DOUT High-Z High-Z High-Z DOUT High-Z DOUT High-Z High-Z MODE Deselected–Power Down Deselected–Power Down All Bytes Deselected Write to Byte 0 Only Write to Byte 1 Only Write to Byte 2 Only Write to Byte 3 Only Write to Lower 2 Bytes Only Write to Upper 2 bytes Only Write to All Bytes Read Byte 0 Only Read Byte 1 Only Read Byte 2 Only Read Byte 3 Only Read Lower 2 Bytes Only Read Upper 2 Bytes Only Read All Bytes Outputs Disabled High-Z Sleep Mode 5679 tbl 02 NOTES: 1. "H" = V IH, "L" = VIL, "X" = Don't Care. 2. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here. Truth Table II – Semaphore Read/Write Control(1) Inputs(1) CE(2) H H L R/ W H ↑ X OE L X X BE3 X X X BE2 L X X BE1 X X X BE0 L L X SEM L L L Outputs I/O1-8, I/O18-26 DATAOUT X ______ I/O0 DATAOUT DATAIN ______ Mode Read Data in Semaphore Flag (3) Write I/O0 into Semaphore Flag Not Allowed 5679 tbl 03 NOTES: 1. There are eight semaphore flags written to I/O 0 and read from the I/Os (I/O0-I/O08 and I/O18-I/O26). These eight semaphore flags are addressed by A0-A2. 2. CE = L occurs when CE0 = VIL and CE1 = VIH. CE = H when CE0 = VIH and/or CE1 = VIL. 3. Each byte is controlled by the respective BEn. To read data BEn = VIL. 5 I DT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges Recommended Operating Temperature and Supply Voltage(1) Grade Commercial Industrial Ambient Temperature 0OC to +70OC -40OC to +85OC GND 0V 0V VDD 2.5V + 100mV 2.5V + 100mV 5679 tbl 04 Recommended DC Operating Conditions with VDDQ at 2.5V Symbol VDD VDDQ VSS V IH Parameter Core Supply Voltage I/O Supply Voltage Ground Input High Volltage (Address, Control & Data I/O Inputs)(3) Input High Voltage JTAG _ (3) Min. 2.4 2.4 0 1.7 Typ. 2.5 2.5 0 ____ Max. 2.6 2.6 0 VDDQ + 100mV (2) Unit V V V V NOTE: 1. This is the parameter TA. This is the "instant on" case temperature. V IH 1.7 VDD - 0.2V -0.3(1) -0.3(1) ____ VDD + 100mV(2) VDD + 100mV(2) 0.7 0.2 V V V V 5679 tbl 05 Capacitance(1) Symbol CIN COUT(3) V IH VIL (TA = +25°C, F = 1.0MHZ) PQFP ONLY Parameter Input Capacitance Output Capacitance Conditions(2) VIN = 3dV VOUT = 3dV Max. 15 10.5 Unit pF pF 5679 tbl 08 Input High Voltage ZZ, OP T Input Low Voltage Input Low Voltage ZZ, OP T ____ ____ VIL ____ NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. 3dV references the interpolated capacitance when the input and output switch from 0V to 3V or from 3V to 0V. 3. COUT also references CI/O. NOTES: 1. VIL (min.) = -1.0V for pulse width less than t RC/2 or 5ns, whichever is less. 2. VIH (max.) = V DDQ + 1.0V for pulse width less than t RC/2 or 5ns, whichever is less. 3. To select operation at 2.5V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VSS(0V), and V DDQX for that port must be supplied as indicated above. Absolute Maximum Ratings(1) Symbol VTERM (V DD) VTERM (V DDQ) (2) Recommended DC Operating Conditions with VDDQ at 3.3V Symbol Parameter Core Supply Voltage I/O Supply Voltage (3) Ground Input High Voltage (Address, Control &Data I/O Inputs)(3) Input High Voltage JTAG _ Min. 2.4 3.15 0 2.0 Typ. 2.5 3.3 0 ____ Max. 2.6 3.45 0 VDDQ + 150mV(2) Unit V V V V Rating VDD Terminal Voltage with Respect to GND VDDQ Terminal Voltage with Respect to GND Input and I/O Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Junction Temperature Commercial & Industrial -0.5 to 3.6 -0.3 to VDDQ + 0.3 -0.3 to VDDQ + 0.3 -55 to +125 -65 to +150 +150 50 40 Unit V V V o V DD VDDQ V SS VIH VTERM(2) (INPUTS and I/O's) TBIAS(3) TSTG TJN VIH VIH VIL VIL 1.7 VDD - 0.2V -0.3 (1) ____ V DD + 100mV (2) V DD + 100mV (2) 0.8 0.2 V V V V 5679 tbl 06 C C C Input High Voltage ZZ, OP T Input Low Voltage Input Low Voltage ZZ, OP T ____ ____ o -0.3 (1) ____ o IOUT(For VDDQ = 3.3V) DC Output Current IOUT(For VDDQ = 2.5V) DC Output Current mA mA 5679 tbl 07 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. This is a steady-state DC parameter that applies after the power supply has reached its nominal operating value. Power sequencing is not necessary; however, the voltage on any Input or I/O pin cannot exceed VDDQ during power supply ramp up. 3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected. NOTES: 1. VIL (min.) = -1.0V for pulse width less than t RC/2 or 5ns, whichever is less. 2. VIH (max.) = V DDQ + 1.0V for pulse width less than t RC/2 or 5ns, whichever is less. 3. To select operation at 3.3V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VDD (2.5V), and VDDQX for that port must be supplied as indicated above. 6 IDT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 2.5V ± 100mV) 70T653M Symbol |ILI| |ILI| |ILO| VOL (3.3V) VOH (3.3V) VOL (2.5V) VOH (2.5V) Parameter Input Leakage Current(1) JTAG & ZZ Input Leakage Current Output Leakage Current Output Low Voltage (1) Output High Voltage (1) (1,3) (1,2) Test Conditions VDDQ = Max., VIN = 0V to VDDQ VDD = Max. , VIN = 0V to VDD CE0 = V IH o r CE 1 = VIL, VOUT = 0V to VDDQ IOL = + 4mA, VDDQ = Min. IOH = -4mA, VDDQ = Min. IOL = + 2mA, VDDQ = Min. IOH = -2mA, VDDQ = Min. Min. ___ ___ ___ ___ Max. 10 +60 10 0.4 ___ Unit µA µA µA V V V V 5679 tbl 09 2.4 ___ Output Low Voltage (1) Output High Voltage (1) 0.4 ___ 2.0 NOTES: 1. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to page 6 for details. 2. Applicable only for TMS, TDI and TRST inputs. 3. Outputs tested in tri-state mode. DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(3) (VDD = 2.5V ± 100mV) 70T653MS10 Com'l Only Symbol IDD Parameter Dynamic Operating Current (Both Ports Active) Standby Current (Both Ports - TTL Level Inputs) Standby Current (One Port - TTL Level Inputs) Full Standby Current (Both Ports - CMOS Level Inputs) Full Standby Current (One Port - CMOS Level Inputs) Sleep Mode Current (Both Ports - TTL Level Inputs) Test Condition CEL and CER= VIL, Outputs Disabled f = fMAX(1) CEL = CER = VIH f = fMAX(1) CE"A" = VIL and CE"B" = VIH Active Port Outputs Disabled, f = fMAX(1) (5) 70T653MS12 Com'l & Ind Typ.(4) 600 600 150 150 360 360 4 4 360 360 4 4 Max. 710 790 210 260 460 510 20 40 460 510 20 40 70T653MS15 Com'l Only Typ. (4) 450 ____ Version COM'L IND COM'L IND COM'L IND COM'L IND S S S S S S S S S S S S Typ. (4) 600 ____ Max. 810 ____ Max. 600 ____ Unit mA ISB1 (6) 180 ____ 240 ____ 120 ____ 170 ____ mA ISB2 (6) 400 ____ 530 ____ 300 ____ 400 ____ mA ISB3 Both Ports CEL and CER > VDD - 0.2V, VIN > VDD - 0.2V or VIN < 0.2V, f = 0(2) 4 ____ 20 ____ 4 ____ 20 ____ mA ISB4(6) CE"A" < 0.2V and CE"B" > VDD - 0.2V(5) COM'L VIN > VDD - 0.2V or VIN < 0.2V, Active IND Port, Outputs Disabled, f = fMAX(1) ZZL = ZZR = VIH f = fMAX(1) COM'L IND 400 ____ 530 ____ 300 ____ 400 ____ mA IZZ 4 ____ 20 ____ 4 ____ 20 ____ mA 5679 tbl 10 NOTES: 1. At f = f MAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, using "AC TEST CONDITIONS" at input levels of GND to 3.3V. 2. f = 0 means no address or control lines change. Applies only to input at CMOS level standby. 3. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 4. VDD = 3.3V, T A = 25°C for Typ, and are not production tested. IDD DC(f=0) = 200mA (Typ). 5. CE X = VIL means CE0X = VIL and CE1X = VIH CE X = VIH means CE0X = VIH or CE1X = V IL CE X < 0.2V means CE0X < 0.2V and CE1X > VDDQX - 0.2V CE X > VDDQX - 0.2V means CE 0X > VDDQX - 0.2V or CE1X < 0.2V. "X" represents "L" for left port or "R" for right port. 6. ISB1, ISB2 and ISB4 will all reach full standby levels (I SB3) on the appropriate port(s) if ZZL and /or ZZ R = VIH. 7 I DT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges AC Test Conditions (VDDQ - 3.3V/2.5V) Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND to 3.0V / GND to 2.4V 2ns Max. 1.5V/1.25V 1.5V/1.25V Figure 1 5679 tbl 11 50Ω DATAOUT 50Ω 1.5V/1.25 10pF (Tester) , Figure 1. AC Output Test load. 5679 drw 03 4 3.5 3 ∆ tAA/tACE (Typical, ns) 2.5 2 1.5 1 0.5 0 0 20 40 60 80 100 120 140 160 ∆ Capacitance (pF) from AC Test Load 5679 drw 05 Figure 3. Typical Output Derating (Lumped Capacitive Load). 8 IDT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(4) 70T653MS10 Com'l Only Symbol READ CYCLE tRC tAA tACE tABE tAOE tOH tLZ tLZOB tHZ tPU tPD tSOP tSAA tSOE Read Cycle Time Address Access Time Chip Enable Access Time (3) 70T653MS12 Com'l & Ind Min. Max. 70T653MS15 Com'l Only Min. Max. Unit Parameter Min. Max. 10 ____ ____ ____ ____ ____ 12 ____ ____ ____ ____ ____ 15 ____ ____ ____ ____ ____ ns ns ns ns ns ns ns ns ns ns ns ns ns ns 5679 tbl 12 10 10 5 5 ____ ____ ____ 12 12 6 6 ____ ____ ____ 15 15 7 7 ____ ____ ____ Byte Enable Access Time (3) Output Enable Access Time Output Hold from Address Change Output Low-Z Time Chip Enable and Semaphore (1,2) Output Low-Z Time Output Enable and Byte Enable Output High-Z Time (1,2) (1,2) 3 3 0 0 0 3 3 0 0 0 ____ ____ 3 3 0 0 0 ____ ____ 4 ____ 6 ____ 8 ____ Chip Enable to Power Up Time (2) Chip Disable to Power Down Time (2) ____ ____ 8 4 10 5 8 6 12 6 12 8 15 7 Semaphore Flag Update Pulse (OE o r SEM) Semaphore Address Access Time Semaphore Output Enable Access Time 2 ____ 2 ____ 2 ____ AC Electrical Characteristics Over the Operating Temperature and Supply Voltage(4) 70T653MS10 Com'l Only Symbol WRITE CYCLE tWC tEW tAW tAS tWP tWR tDW tDH tWZ tOW tSWRD tSPS Write Cycle Time Chip Enable to End-of-Write (3) 70T653MS12 Com'l & Ind Min. Max. 70T653MS15 Com'l Only Min. Max. Unit Parameter Min. Max. 10 7 7 0 7 0 5 0 (1,2) ____ ____ ____ ____ ____ ____ ____ ____ ____ 12 9 9 0 9 0 7 0 ____ ____ ____ ____ ____ ____ ____ ____ ____ 15 12 12 0 12 0 10 0 ____ ____ ____ ____ ____ ____ ____ ____ ____ ns ns ns ns ns ns ns ns ns ns ns ns 5679 tbl 13 Address Valid to End-of-Write Address Set-up Time (3) Write Pulse Width Write Recovery Time Data Valid to End-of-Write Data Hold Time Write Enable to Output in High-Z 4 ____ ____ ____ 6 ____ ____ ____ 8 ____ ____ ____ Output Active from End-of-Write (1,2) SEM Flag Write to Read Time SEM Flag Contention Window 3 5 5 3 5 5 3 5 5 NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 1). 2. This parameter is guaranteed by device characterization, but is not production tested. 3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. CE = VIL when CE0 = VIL and CE1 = VIH. CE = VIH when CE 0 = VIH and/or CE1 = VIL. 4. These values are valid regardless of the power supply level selected for I/O and control signals (3.3V/2.5V). See page 6 for details. 9 I DT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges Waveform of Read Cycles(4) tRC ADDR tAA (3) tACE tAOE OE tABE (3) BEn (3) (3) CE (5) R/W tLZ/tLZOB DATAOUT (1) tOH VALID DATA (3) (2) . tHZ 5679 drw 06 NOTES: 1. Timing depends on which signal is asserted last, OE, CE or BEn. 2. Timing depends on which signal is de-asserted first CE, OE or BEn. 3. Start of valid data depends on which timing becomes effective last tAOE, tACE , tAA or tABE. 4. SEM = VIH. 5. CE = L occurs when CE0 = VIL and CE1 = VIH. CE = H when CE0 = VIH and/or CE1 = VIL. Timing of Power-Up Power-Down CE tPU ICC 50% 50% 5679 drw 07 tPD . ISB 10 IDT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges Timing Waveform of Write Cycle No. 1, R/W Controlled Timing(1,5,8) tWC ADDRESS tHZ OE tAW CE or SEM (9) (7) BEn (9) tAS (6) R/W tWZ (7) DATAOUT (4) tWP (2) tWR (3) tOW (7) (4) tDW DATAIN tDH 5679 drw 10 . Timing Waveform of Write Cycle No. 2, CE Controlled Timing(1,5,8) tWC ADDRESS tAW CE or SEM (9) (6) tAS BEn(9) tEW (2) tWR(3) R/W tDW DATAIN 5679 drw 11 . tDH . NOTES: 1. R/W or CE or BEn = VIH during all address transitions for Write Cycles 1 and 2. 2. A write occurs during the overlap (tEW or tWP) of a CE = VIL, BEn = VIL, and a R/W = VIL for memory array writing cycle. 3. tWR is measured from the earlier of CE, BEn or R/W (or SEM or R/W) going HIGH to the end of write cycle. 4. During this period, the I/O pins are in the output state and input signals must not be applied. 5. If the CE or SEM = VIL transition occurs simultaneously with or after the R/W = VIL transition, the outputs remain in the High-impedance state. 6. Timing depends on which enable signal is asserted last, CE or R/W. 7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load (Figure 1). 8. If OE = VIL during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW ) to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW . If OE = VIH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP . 9. To access RAM, CE = V IL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. tEW must be met for either condition. CE = V IL when CE0 = V IL and CE1 = VIH. CE = VIH when CE0 = VIH and/or CE1 = VIL. 11 I DT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges RapidWrite Mode Write Cycle Unlike other vendors' Asynchronous Random Access Memories, the IDT70T653M is capable of performing multiple back-to-back write operations without having to pulse the R/W, CE, or BEn signals high during address transitions. This RapidWrite Mode functionality allows the system designer to achieve optimum back-to-back write cycle performance without the difficult task of generating narrow reset pulses every cycle, simplifying system design and reducing time to market. During this new RapidWrite Mode, the end of the write cycle is now defined by the ending address transition, instead of the R/W or CE or BEn transition to the inactive state. R/W, CE, and BEn can be held active throughout the address transition between write cycles. Care must be taken to still meet the Write Cycle time (tWC), the time in which the Address inputs must be stable. Input data setup and hold times (tDW and tDH) will now be referenced to the ending address transition. In this RapidWrite Mode the I/O will remain in the Input mode for the duration of the operations due to R/W being held low. All standard Write Cycle specifications must be adhered to. However, tAS and tWR are only applicable when switching between read and write operations. Also, there are two additional conditions on the Address Inputs that must also be met to ensure correct address controlled writes. These specifications, the Allowable Address Skew (tAAS) and the Address Rise/Fall time (tARF), must be met to use the RapidWrite Mode. If these conditions are not met there is the potential for inadvertent write operations at random intermediate locations as the device transitions between the desired write addresses. Timing Waveform of Write Cycle No. 3, RapidWrite Mode Write Cycle(1,3) tWC ADDRESS tWC (4) tWC CE or SEM (6) tEW (2) BEn tWR R/W tWP tWZ (5) tOW tDH tDW tDW tDH tDW tDH (5) DATAOUT DATAIN 5679 drw 08 NOTES: 1. OE = VIL for this timing waveform as shown. OE may equal VIH with same write functionality; I/O would then always be in High-Z state. 2. A write occurs during the overlap (tEW or tWP) of a CE = V IL, BEn = VIL, and a R/W = VIL for memory array writing cycle. The last transition LOW of CE , BEn, and R/W initiates the write sequence. The first transition HIGH of CE, BEn, and R/W terminates the write sequence. 3. If the CE or SEM = VIL transition occurs simultaneously with or after the R/W = VIL transition, the outputs remain in the High-impedance state. 4. The timing represented in this cycle can be repeated multiple times to execute sequential RapidWrite Mode writes. 5. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load (Figure 1). 6. To access RAM, CE = V IL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. tEW must be met for either condition. CE = V IL when CE0 = V IL and CE1 = VIH. CE = V IH when CE0 = VIH and/or CE1 = VIL. 12 IDT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges AC Electrical Characteristics over the Operating Temperature Range and Supply Voltage Range for RapidWrite Mode Write Cycle(1) Symbol tAAS tARF Parameter Allowable Address Skew for RapidWrite Mode Address Rise/Fall Time for RapidWrite Mode Min ____ Max 1 ____ Unit ns V/ns 5679 tbl 14 1.5 NOTE: 1. Timing applies to all speed grades when utilizing the RapidWrite Mode Write Cycle. Timing Waveform of Address Inputs for RapidWrite Mode Write Cycle A0 tAAS tARF A18 tARF 5679 drw 09 13 I DT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges Timing Waveform of Semaphore Read after Write Timing, Either Side(1) tSAA A0-A2 VALID ADDRESS tAW SEM(1) tEW tOH tDW I/O tAS R/W tSWRD OE Write Cycle VALID ADDRESS tACE tWR tSOP DATAOUT(2) VALID DATA IN VALID tWP tDH tSOE tSOP Read Cycle 5679 drw 12 . NOTES: 1. CE0 = VIH and CE1 = VIL are required for the duration of both the write cycle and the read cycle waveforms shown above. Refer to Truth Table II for details and for appropriate BEn controls. 2. "DATAOUT VALID" represents all I/O's (I/O 0 - I/O8 and I/O18 - I/O26) equal to the semaphore value. Timing Waveform of Semaphore Write Contention(1,3,4) A0"A"-A2"A" MATCH SIDE (2) "A" R/W"A" SEM"A" tSPS A0"B"-A2"B" MATCH SIDE (2) "B" R/W"B" SEM"B" 5679 drw 13 . NOTES: 1. DOR = D OL = VIL, CEL = CE R = VIH. Refer to Truth Table II for appropriate BE controls. 2. All timing is the same for left and right ports. Port "A" may be either left or right port. "B" is the opposite from port "A". 3. This parameter is measured from R/W"A" or SEM"A" going HIGH to R/W"B" or SEM"B" going HIGH. 4. If tSPS is not satisfied,the semaphore will fall positively to one side or the other, but there is no guarantee which side will be granted the semaphore flag. 14 IDT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range 70T653MS10 Com'l Only Symbol BUSY TIMING tWB tWH BUSY Input to Write (4) Write Hold After BUSY(5) 0 7 ____ ____ Parameter 70T653MS12 Com'l & Ind Min. Max. 70T653MS15 Com'l Only Min. Max. Unit Min. Max. 0 9 ____ ____ 0 12 ____ ____ ns ns PORT-TO-PORT DELAY TIMING tWDD tDDD Write Pulse to Data Delay (1) Write Data Valid to Read Data Delay (1) ____ ____ 14 14 ____ ____ 16 16 ____ ____ 20 20 ns ns 5679 tbl 15 NOTES: 1. Port-to-port delay through RAM cells from writing port to reading port, refer to Timing Waveform of Write with Port-to-Port Read. 2. To ensure that the earlier of the two ports wins. 3. tBDD is a calculated parameter and is the greater of the Max. spec, tWDD – tWP (actual), or tDDD – tDW (actual). 4. To ensure that the write cycle is inhibited on port "B" during contention on port "A". 5. To ensure that a write cycle is completed on port "B" after contention on port "A". AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1,2,3) 70T65M3S10 Com'l Only Symbol SLEEP MODE TIMING (ZZx=V IH) tZZS tZZR tZZPD tZZPU Sleep Mode Set Time Sleep Mode Reset Time Sleep Mode Power Down Time (4) Sleep Mode Power Up Time (4) 10 10 10 ____ ____ ____ ____ Parameter 70T653MS12 Com'l & Ind Min. Max. 70T6539MS15 Com'l Only Min. Max. Min. Max. 12 12 12 ____ ____ ____ ____ 15 15 15 ____ ____ ____ ____ 0 0 0 5679 tbl 15a NOTES: 1. Timing is the same for both ports. 2. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx, INT x and the sleep mode pins themselves (ZZx) are not affected during sleep mode. It is recommended that boundary scan not be operated during sleep mode. 3. These values are valid regardless of the power supply level selected for I/O and control signals (3.3V/2.5V). See page 6 for details. 4. This parameter is guaranteed by device characterization, but is not production tested. 15 I DT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges Timing Waveform of Write with Port-to-Port Read(1,3) tWC ADDR"A" MATCH tWP R/W"A" tDW DATAIN "A" VALID tDH ADDR"B" (4) MATCH R/W"B" tWDD DATAOUT "B" VALID NOTES: 1. CE0L = CE0R = VIL; CE1L = CE1R = VIH. 2. OE = VIL for the reading port. 3. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A". 4. R/WB = V IH. tDDD (3) . 5679 drw 14a Timing Waveform of Write with BUSY tWP R/W"A" tWB BUSY"B" tWH(1) R/W"B" NOTES: 1. tWH must be met for BUSY input. 2. BUSY is asserted on port "B" blocking R/W"B" , until BUSY"B" goes HIGH. (2) . 5679 drw 15 AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1,2) 70T653MS10 Com'l Only Symbol INTERRUPT TIMING tAS tWR tINS tINR Address Set-up Time Write Recovery Time Interrupt Set Time Interrupt Reset Time 0 0 ____ ____ ____ ____ 70T653MS12 Com'l & Ind Min. Max. 70T653MS15 Com'l Only Min. Max. Unit Parameter Min. Max. 0 0 ____ ____ ____ ____ 0 0 ____ ____ ____ ____ ns ns ns ns 5679 tbl 16 10 10 12 12 15 15 NOTES: 1. Timing is the same for both ports. 2. These values are valid regardless of the power supply level selected for I/O and control signals (3.3V/2.5V). See page 6 for details. 16 IDT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges Waveform of Interrupt Timing(1) tWC ADDR"A" tAS(4) CE"A"(3) INTERRUPT SET ADDRESS (2) tWR(5) R/W"A" tINS INT"B" . 5679 drw 18 (4) tRC ADDR"B" CE"B"(3) INTERRUPT CLEAR ADDRESS tAS (4) (2) OE"B" tINR (4) INT"B" NOTES: 1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from port “A”. 2. Refer to Interrupt Truth Table. 3. CEX = VIL means CE0X = VIL and CE 1X = V IH. CEX = V IH means CE0X = V IH and/or CE1X = VIL. 4. Timing depends on which enable signal (CE or R/W) is asserted last. 5. Timing depends on which enable signal (CE or R/ W) is de-asserted first. 5679 drw 19 . Truth Table III — Interrupt Flag(1,4) Left Port R/WL L X X X CEL L X X L OEL X X X L A18L-A0L 7FFFF X X 7FFFE INTL X X L(3) H(2) R/WR X X L X CER X L L X Right Port OER X L X X A18R-A0R X 7FFFF 7FFFE X INTR L (2) Function Set Right INTR Flag Reset Right INTR Flag Set Left INTL Flag Reset Left INTL Flag 5679 tbl 17 H(3) X X NOTES: 1. Assumes BUSYL = BUSYR =VIH. CE0X = VIL and CE1X = VIH. 2. If BUSYL = V IL, then no change. 3. If BUSYR = VIL, then no change. 4. INTL and INTR must be initialized at power-up. 17 I DT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges Truth Table IV — Example of Semaphore Procurement Sequence(1,2,3) Functions No Action Left Port Writes "0" to Semaphore Right Port Writes "0" to Semaphore Left Port Writes "1" to Semaphore Left Port Writes "0" to Semaphore Right Port Writes "1" to Semaphore Left Port Writes "1" to Semaphore Right Port Writes "0" to Semaphore Right Port Writes "1" to Semaphore Left Port Writes "0" to Semaphore Left Port Writes "1" to Semaphore D0 - D8 Left D18 - D26 Left 1 0 0 1 1 0 1 1 1 0 1 D0 - D8 Right D18 - D26 Right 1 1 1 0 0 1 1 0 1 1 1 Semaphore free Left port has semaphore token No change. Right side has no write access to semaphore Right port obtains semaphore token No change. Left port has no write access to semaphore Left port obtains semaphore token Semaphore free Right port has semaphore token Semaphore free Left port has semaphore token Semaphore free 5679 tbl 19 Status NOTES: 1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70T653M. 2. There are eight semaphore flags written to via I/O0 and read from I/Os (I/O0-I/O8 and I/O18 -I/O26 ). These eight semaphores are addressed by A0 - A2. 3. CE = VIH, SEM = V IL to access the semaphores. Refer to the Semaphore Read/Write Control Truth Table. The IDT70T653M provides two ports with separate control, address and I/O pins that permit independent access for reads or writes to any location in memory. The IDT70T653M has an automatic power down feature controlled by CE. The CE0 and CE1 control the on-chip power down circuitry that permits the respective port to go into a standby mode when not selected (CE = HIGH). When a port is enabled, access to the entire memory array is permitted. Functional Description If the user chooses the interrupt function, a memory location (mail box or message center) is assigned to each port. The left port interrupt flag (INTL) is asserted when the right port writes to memory location 7FFFE (HEX), where a write is defined as CER = R/WR = VIL per the Truth Table. The left port clears the interrupt through access of address location 7FFFE when CEL = OEL = VIL, R/W is a "don't care". Likewise, the right port interrupt flag (INTR) is asserted when the left port writes to memory location 7FFFF (HEX) and to clear the interrupt flag (INTR), the right port must read the memory location 7FFFF. The message (36 bits) at 7FFFE or 7FFFF is user-defined since it is an addressable SRAM location. If the interrupt function is not used, address locations 7FFFE and 7FFFF are not used as mail boxes, but as part of the random access memory. Refer to Truth Table III for the interrupt operation. Interrupts Busy Logic The BUSY pin operates as a write inhibit input pin. Normal operation can be programmed by tying the BUSY pins HIGH. If desired, unintended write operations can be prevented to a port by tying the BUSY pin for that port LOW. The IDT70T653M is an extremely fast Dual-Port 512K x 36 CMOS Static RAM with an additional 8 address locations dedicated to binary 18 Semaphores semaphore flags. These flags allow either processor on the left or right side of the Dual-Port RAM to claim a privilege over the other processor for functions defined by the system designer’s software. As an example, the semaphore can be used by one processor to inhibit the other from accessing a portion of the Dual-Port RAM or any other shared resource. The Dual-Port RAM features a fast access time, with both ports being completely independent of each other. This means that the activity on the left port in no way slows the access time of the right port. Both ports are identical in function to standard CMOS Static RAM and can be read from or written to at the same time with the only possible conflict arising from the simultaneous writing of, or a simultaneous READ/WRITE of, a nonsemaphore location. Semaphores are protected against such ambiguous situations and may be used by the system program to avoid any conflicts in the non-semaphore portion of the Dual-Port RAM. These devices have an automatic power-down feature controlled by CE0 and CE1, the DualPort RAM chip enables, and SEM, the semaphore enable. The CE0, CE1, and SEM pins control on-chip power down circuitry that permits the respective port to go into standby mode when not selected. Systems which can best use the IDT70T653M contain multiple processors or controllers and are typically very high-speed systems which are software controlled or software intensive. These ystems can benefit from a performance increase offered by the IDT70T653Ms hardware semaphores, which provide a lockout mechanism without requiring complex programming. Software handshaking between processors offers the maximum in system flexibility by permitting shared resources to be allocated invarying configurations. The IDT70T653M does not use its semaphore flags to control any resources through hardware, thus allowing the system designer total flexibility in system architecture. An advantage of using semaphores rather than the more common methods of hardware arbitration is that wait states are never incurred in either processor. This can prove to be a major advantage in very high-speed systems. IDT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges The semaphore logic is a set of eight latches which are independent of the Dual-Port RAM. These latches can be used to pass a flag, or token, from one port to the other to indicate that a shared resource is in use. The semaphores provide a hardware assist for a use assignment method called “Token Passing Allocation.” In this method, the state of a semaphore latch is used as a token indicating that a shared resource is in use. If the left processor wants to use this resource, it requests the token by setting the latch. This processor then verifies its success in setting the latch by reading it. If it was successful, it proceeds to assume control over the shared resource. If it was not successful in setting the latch, it determines that the right side processor has set the latch first, has the token and is using the shared resource. The left processor can then either repeatedly request that semaphore’s status or remove its request for that semaphore to perform another task and occasionally attempt again to gain control of the token via the set and test sequence. Once the right side has relinquished the token, the left side should succeed in gaining control. The semaphore flags are active LOW. A token is requested by writing a zero into a semaphore latch and is released when the same side writes a one to that latch. The eight semaphore flags reside within the IDT70T653M in a separate memory space from the Dual-Port RAM. This address space is accessed by placing a low input on the SEM pin (which acts as a chip select for the semaphore flags) and using the other control pins (Address, CE0, CE1,R/W and BEn) as they would be used in accessing a standard Static RAM. Each of the flags has a unique address which can be accessed by either side through address pins A0 – A2. When accessing the semaphores, none of the other address pins has any effect. When writing to a semaphore, only data pin D0 is used. If a low level is written into an unused semaphore location, that flag will be set to a zero on that side and a one on the other side (see Truth Table IV). That semaphore can now only be modified by the side showing the zero. When a one is written into the same location from the same side, the flag will be set to a one for both sides (unless a semaphore request from the other side is pending) and then can be written to by both sides. The fact that the side which is able to write a zero into a semaphore subsequently locks out writes from the other side is what makes semaphore flags useful in interprocessor communications. (A thorough discussion on the use of this feature follows shortly.) A zero written into the same location from the other side will be stored in the semaphore request latch for that side until the semaphore is freed by the first side. When a semaphore flag is read, its value is spread into all data bits so that a flag that is a one reads as a one in all data bits and a flag containing a zero reads as all zeros for a semaphore read, the SEM, BEn, and OE signals need to be active. (Please refer to Truth Table II). Furthermore, the read value is latched into one side’s output register when that side's semaphore select (SEM, BEn) and output enable (OE) signals go active. This serves to disallow the semaphore from changing state in the middle of a read cycle due to a write cycle from the other side. A sequence WRITE/READ must be used by the semaphore in order to guarantee that no system level contention will occur. A processor requests access to shared resources by attempting to write a zero into a semaphore location. If the semaphore is already in use, the semaphore request latch will contain a zero, yet the semaphore flag will appear as one, a fact which the processor will verify by the 19 How the Semaphore Flags Work subsequent read (see Table IV). As an example, assume a processor writes a zero to the left port at a free semaphore location. On a subsequent read, the processor will verify that it has written successfully to that location and will assume control over the resource in question. Meanwhile, if a processor on the right side attempts to write a zero to the same semaphore flag it will fail, as will be verified by the fact that a one will be read from that semaphore on the right side during subsequent read. Had a sequence of READ/WRITE been used instead, system contention problems could have occurred during the gap between the read and write cycles. It is important to note that a failed semaphore request must be followed by either repeated reads or by writing a one into the same location. The reason for this is easily understood by looking at the simple logic diagram L PORT SEMAPHORE REQUEST FLIP FLOP D0 WRITE D Q R PORT SEMAPHORE REQUEST FLIP FLOP Q D D0 WRITE SEMAPHORE READ Figure 4. IDT70T653M Semaphore Logic SEMAPHORE READ 5679 drw 21 of the semaphore flag in Figure 4. Two semaphore request latches feed into a semaphore flag. Whichever latch is first to present a zero to the semaphore flag will force its side of the semaphore flag LOW and the other side HIGH. This condition will continue until a one is written to the same semaphore request latch. If the opposite side semaphore request latch has been written to zero in the meantime, the semaphore flag will flip over to the other side as soon as a one is written into the first request latch. The opposite side flag will now stay LOW until its semaphore request latch is written to a one. From this it is easy to understand that, if a semaphore is requested and the processor which requested it no longer needs the resource, the entire system can hang up until a one is written into that semaphore request latch. The critical case of semaphore timing is when both sides request a single token by attempting to write a zero into it at the same time. The semaphore logic is specially designed to resolve this problem. If simultaneous requests are made, the logic guarantees that only one side receives the token. If one side is earlier than the other in making the request, the first side to make the request will receive the token. If both requests arrive at the same time, the assignment will be arbitrarily made to one port or the other. One caution that should be noted when using semaphores is that semaphores alone do not guarantee that access to a resource is secure. As with any powerful programming technique, if semaphores are misused or misinterpreted, a software error can easily happen. Initialization of the semaphores is not automatic and must be handled via the initialization program at power-up. Since any semaphore request flag which contains a zero must be reset to a one, all semaphores on both sides should have a one written into them at initialization from both sides to assure that they will be free when needed. Timing Waveform of Sleep Mode(1,2) al Norm Operation N newreads or writes allowed o ode Sleep M N reads or writes allowed o al N orm Operation CE0 tZZS tZZR ZZ , I DT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM 20 SS DRE VALIDAD ATA ALIDD V tZZPD IZZ tZZPU 5679 drw22 RESS ADD DATA IDD Preliminary Industrial and Commercial Temperature Ranges NOTES: 1. CE1 = V IH. 2. All timing is same for Left and Right ports. IDT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges The IDT70T653M is equipped with an optional sleep or low power mode on both ports. The sleep mode pin on both ports is active high. During normal operation, the ZZ pin is pulled low. When ZZ is pulled high, the port will enter sleep mode where it will meet lowest possible power conditions. The sleep mode timing diagram shows the modes of operation: Normal Operation, No Read/Write Allowed and Sleep Mode. For a period of time prior to sleep mode and after recovering from sleep Sleep Mode mode (tZZS and tZZR), new reads or writes are not allowed. If a write or read operation occurs during these periods, the memory array may be corrupted. Validity of data out from the RAM cannot be guaranteed immediately after ZZ is asserted (prior to being in sleep). During sleep mode the RAM automatically deselects itself. The RAM disconnects its internal buffer. All outputs will remain in high-Z state while in sleep mode. All inputs are allowed to toggle. The RAM will not be selected and will not perform any reads or writes. JTAG Configuration IDT70T653M TDIA TDOA TDIB TDOB Array A Array B TCK TMS TRST 5679 drw 23 JTAG Timing Specifications tJF TCK tJCL tJCYC tJR tJCH Device Inputs(1)/ TDI/TMS tJS Device Outputs(2)/ TDO TRST 5679 drw 24 tJH tJDC tJRSR tJCD x tJRST NOTES: 1. Device inputs = All device inputs except TDI, TMS, TCK and TRST. 2. Device outputs = All device outputs except TDO. 21 I DT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges JTAG AC Electrical Characteristics(1,2,3,4,5) Symbol tJCYC tJCH tJCL tJR tJF tJRST tJRSR tJCD tJDC tJS tJH Parameter JTAG Clock Input Period JTAG Clock HIGH JTAG Clock Low JTAG Clock Rise Time JTAG Clock Fall Time JTAG Reset JTAG Reset Recovery JTAG Data Output JTAG Data Output Hold JTAG Setup JTAG Hold Min. 100 40 40 ____ ____ 70T653M Max. ____ ____ ____ Units ns ns ns ns ns ns ns ns ns ns ns 5679 tbl 20 3(1) 3(1) ____ ____ 50 50 ____ 25 ____ ____ ____ 0 15 15 NOTES: 1. Guaranteed by design. 2. 30pF loading on external output signals. 3. Refer to AC Electrical Test Conditions stated earlier in this document. 4. JTAG operations occur at one speed (10MHz). The base device may run at any speed specified in this datasheet. 5. JTAG cannot be tested in sleep mode. Identification Register Definitions Instruction Field Array B Revision Number (31:28) IDT Device ID (27:12) IDT JEDEC ID (11:1) ID Register Indicator Bit (Bit 0) Value Array B 0x0 0x33B 0x33 1 Instruction Field Array A Revision Number (63:60) IDT Device ID (59:44) IDT JEDEC ID (43:33) ID Register Indicator Bit (Bit 32) Value Array A 0x0 0x33B 0x33 1 Description Reserved for Version number Defines IDT Part number Allows unique identification of device vendor as IDT Indicates the presence of an ID Register 5679 tbl 21 Scan Register Sizes Register Name Instruction (IR) Bypass (BYR) Identification (IDR) Boundary Scan (BSR) Bit Size Array A 4 1 32 Note (3) Bit Size Array B 4 1 32 Note (3) Bit Size 70T653M 8 2 64 Note (3) 5679 tbl 22 22 IDT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges System Interface Parameters Instruction EXTEST BYPASS IDCODE Code 00000000 11111111 00100010 01000100 Description Forces contents of the boundary scan cells onto the device outputs (1). Places the boundary scan register (BSR) between TDI and TDO. Places the bypass register (BYR) between TDI and TDO. Loads the ID register (IDR) with the vendor ID code and places the register between TDI and TDO. Places the bypass register (BYR) between TDI and TDO. Forces all device output drivers to a High-Z state. Uses BYR. Forces contents of the boundary scan cells onto the device outputs. Places the bypass register (BYR) between TDI and TDO. Places the boundary scan register (BSR) between TDI and TDO. SAMPLE allows data from device inputs (2) and outputs (1) to be captured in the boundary scan cells and shifted serially through TDO. PRELOAD allows data to be input serially into the boundary scan cells via the TDI. Several combinations are reserved. Do not use codes other than those identified above. 5679 tbl 23 HIGHZ CLAMP SAMPLE/PRELOAD 00110011 00010001 RESERVED All Other Codes NOTES: 1. Device outputs = All device outputs except TDO. 2. Device inputs = All device inputs except TDI, TMS, TCK and TRST. 3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local IDT sales representative. 23 I DT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Preliminary Industrial and Commercial Temperature Ranges Ordering Information IDT XXXXX Device Type A Power 999 Speed A Package A Process/ Temperature Range Commercial (0°C to +70°C) Industrial (-40°C to +85°C) Blank I BC 256-ball BGA (BC-256) 10 12 15 Commercial Only Commercial & Industrial Commercial Only . Speed in nanoseconds S Standard Power 70T653M 18Mbit (512K x 36) Asynchronous Dual-Port RAM 5679 drw 25 Preliminary Datasheet: Definition "PRELIMINARY' datasheets contain descriptions for products that are in early release. Datasheet Document History: 10/08/03: Initial Datasheet 10/20/03: Page 1 Added "Includes JTAG functionality" to features Page 13 Corrected tARF to 1.5V/ns Min. CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com for Tech Support: 831-754-4613 DualPortHelp@idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 24