IDT70V05L35G

HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. IDT70V05S/L FEATURES: • True Dual-Ported memory cells which allow simultaneous access of the same memory location • High-speed access — Commercial: 25/35/55ns (max.) • Low-power operation — IDT70V05S Active: 350mW (typ.) Standby: 3.5mW (typ.) — IDT70V05L Active: 350mW (typ.) Standby: 1mW (typ.) • IDT70V05 easily expands data bus width to 16 bits or more using the Master/Slave select when cascading more than one device • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Busy and Interrupt Flags • On-chip port arbitration logic • Full on-chip hardware support of semaphore signaling between ports • Fully asynchronous operation from either port • Devices are capable of withstanding greater than 2001V electrostatic discharge • Battery backup operation—2V data retention • LVTTL-compatible, single 3.3V (± 0.3V) power supply • Available in 68-pin PGA, 68-pin PLCC, and a 64-pin TQFP DESCRIPTION: The IDT70V05 is a high-speed 8K x 8 Dual-Port Static RAM. The IDT70V05 is designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE DualPort RAM for 16-bit-or-more word systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 16-bit or wider memory system applications results in full-speed, error-free FUNCTIONAL BLOCK DIAGRAM OEL R/ OER R/ CEL WL CER WR I/O0L- I/O7L I/O Control I/O Control I/O0R-I/O7R BUSYL (1,2) BUSYR Address Decoder 13 (1,2) A12L A0L MEMORY ARRAY Address Decoder A12R A0R 13 NOTES: 1. (MASTER): BUSY is output; (SLAVE): BUSY is input. 2. BUSY outputs and INT outputs are non-tristated push-pull. OEL R/ CEL WL ARBITRATION INTERRUPT SEMAPHORE LOGIC CER R/ OER WR SEMR (2) SEML INTL (2) M/S INTR 2941 drw 01 The IDT logo is a registered trademark of Integrated Device Technology, Inc. COMMERCIAL TEMPERATURE RANGE ©1996 Integrated Device Technology, Inc. For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391. OCTOBER 1996 6.35 DSC-2941/3 1 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE operation without the need for additional discrete logic. This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT’s CMOS high-performance technology, these devices typically operate on only 350mW of power. Low-power (L) versions offer battery backup data retention capability with typical power consumption of 500µW from a 2V battery. The IDT70V05 is packaged in a ceramic 68-pin PGA, a 68pin PLCC, and a 64-pin thin plastic quad flatpack (TQFP). PIN CONFIGURATIONS (1,2) SEML 4 I/O1L I/O0L N/C WL R/ 6 5 INDEX I/O2L I/O3L I/O4L I/O5L GND I/O6L I/O7L VCC GND I/O0R I/O1R I/O2R VCC I/O3R I/O4R I/O5R I/O6R 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 9 8 7 3 N/C N/C VCC A12L A11L A10L A9L A8L A7L A6L 2 1 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 OEL CEL IDT70V05 J68-1 F68-1 PLCC / FLATPACK TOP VIEW(3) A5L A4L A3L A2L A1L A0L INTL BUSYL GND M/S INTR BUSYR A0R A1R A2R A3R A4R 44 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 I/O7R N/C SEMR N/C N/C GND A12R A11R A10R A9R A8R A7R A6R A5R OER WR CER 2941 drw 02 R/ I/O1L I/O0L R/ L SEML OEL INDEX 54 53 52 64 63 62 59 58 57 61 60 56 55 I/O2L I/O3L I/O4L I/O5L GND I/O6L I/O7L VCC GND I/O0R I/O1R I/O2R VCC I/O3R I/O4R I/O5R 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 51 50 49 N/C VCC A12L A11L A10L A9L A8L A7L A6L A5L 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 W CEL A4L A3L A2L A1L A0L INTL IDT70V05 PN-64 TQFP TOP VIEW(3) BUSYL GND M/S BUSYR INTR A0R A1R A2R A3R A4R 26 27 28 20 21 22 29 30 31 A7R A6R A8R I/O6R I/O7R OER 17 18 19 SEMR R/ R CER 23 24 25 A11R A10R A9R GND A12R A5R N/C 32 NOTES: 1. All Vcc pins must be connected to the power supply. 2. All GND pins must be connected to the ground supply. 3. This text does not indicate orientation of the actual part-marking. 6.35 W 2941 drw 03 2 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE PIN CONFIGURATIONS (CONT'D) (1,2) 51 11 53 A7L 55 A9L A5L 52 A6L 54 A8L 50 A4L 49 A3L 48 A2L 47 A1L 46 44 42 A0L BUSYL M/S 45 INTL 40 INTR 38 A1R 36 A3R 35 A4R 32 A7R 30 A9R 34 A5R 33 A6R 31 A8R 10 43 41 39 37 GND BUSYR A0R A2R 09 08 57 56 A11L A10L 59 58 VCC A12L 07 61 60 06 N/C N/C 63 05 IDT70V05 G68-1 68-PIN PGA TOP VIEW(3) 28 29 A11R A10R 26 27 GND A12R 24 N/C 25 N/C 23 SEML CEL OEL R/WL 64 62 65 04 SEMR 20 22 CER 03 67 66 I/O0L N/C 1 3 68 I/O1L I/O2L I/O4L 2 4 I/O3L I/O5L B C 5 7 9 11 13 15 GND I/O7L GND I/O1R VCC I/O4R 6 I/O6L D 8 10 12 14 16 VCC I/O0R I/O2R I/O3R I/O5R E F G H J OER 21 R/ R W 02 18 19 I/O7R N/C 17 I/O6R K L 2941 drw 04 01 A INDEX NOTES: 1. All VCC pins must be connected to power supply. 2. All GND pins must be connected to ground supply. 3. This text does not indicate oriention of the actual part-marking PIN NAMES Left Port R/WL Right Port Names Chip Enable Read/Write Enable Output Enable Address Data Input/Output Semaphore Enable Interrupt Flag Busy Flag Master or Slave Select Power Ground 2941 tbl 01 CEL OEL CER R/WR OER A0R – A12R I/O0R – I/O7R A0L – A12L I/O0L – I/O7L SEML INTL BUSYL M/S VCC SEMR INTR BUSYR GND 6.35 3 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE TRUTH TABLE I – NON-CONTENTION READ/WRITE CONTROL Inputs(1) Outputs CE H L L X NOTE: R/W X L H X OE X X L H SEM H H H X I/O0-7 High-Z DATAIN DATAOUT High-Z Deselected: Power Down Write to Memory Read Memory Outputs Disabled Mode 2941 tbl 02 1. A0L — A12L ≠ A0R — A12R. TRUTH TABLE II – SEMAPHORE READ/WRITE CONTROL(1) Inputs Outputs CE H H L R/W H X OE L X X SEM L L L I/O0-7 DATAOUT DATAIN — Read Data in Semaphore Flag Write DIN0 into Semaphore Flag Not Allowed Mode NOTE: 1. There are eight semaphore flags written to via I/O0 and read from all I/O's (I/O0-I/O7). These eight semaphores are addressed by A0 - A2. 2941 tbl 03 ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM(2) Rating Terminal Voltage with Respect to GND Operating Temperature Temperature Under Bias Storage Temperature DC Output Current Commercial Unit –0.5 to +4.6 V RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Grade Commercial Ambient Temperature 0°C to +70°C GND 0V VCC 3.3V ± 0.3V 2941 tbl 05 TA TBIAS TSTG IOUT 0 to +70 –55 to +125 –55 to +125 50 °C °C °C mA RECOMMENDED DC OPERATING CONDITIONS Symbol VCC GND VIH VIL Parameter Supply Voltage Supply Voltage Input High Voltage Input Low Voltage Min. 3.0 0 2.0 -0.3(1) Typ. 3.3 0 — — Max. Unit 3.6 0 0.8 V V V 2941 tbl 06 NOTES: 2941 tbl 04 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed Vcc + 0.3V. Vcc+0.3 V NOTES: 1. VIL≥ -1.5V for pulse width less than 10ns. 2. VTERM must not exceed Vcc + 0.5V. CAPACITANCE(1) (TA = +25°C, f = 1.0MHz)TQFP ONLY Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions(1) Max. VIN = 3dV VOUT = 3dV 11 11 Unit pF pF NOTES: 2941 tbl 07 1. This parameter is determined by device characterization but is not production tested. 2. 3dV represents the interpolated capacitance when the input and output signals switch from 0V to 3V or from 3V to 0V. 6.35 4 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE DC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE (VCC = 3.3V ± 0.3V) IDT70V05S Symbol |ILI| |ILO| VOL VOH Parameter Input Leakage Current (1) IDT70V05L Min. — — — 2.4 Max. 5 5 0.4 — Unit µA µA V V 2941 tbl 08 Test Conditions VCC = 3.6V, VIN = 0V to VCC Min. — — — 2.4 Max. 10 10 0.4 — Output Leakage Current Output Low Voltage Output High Voltage CE = VIH, VOUT = 0V to VCC IOL = 4mA IOH = -4mA NOTE: 1. At Vcc ≤ 2.0V input leakages are undefined. DC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(1) (VCC = 3.3V ± 0.3V) 70V05X25 Symbol ICC Parameter Dynamic Operating Current (Both Ports Active) Standby Current (Both Ports — TTL Level Inputs) Standby Current (One Port — TTL Level Inputs) Test Condition Version COM’L S L 70V05X35 70V05X55 Typ.(2) Max. Typ.(2) Max. Typ.(2) Max. Unit 80 70 140 120 70 60 115 100 70 60 115 100 mA f = fMAX(3) CE = VIL, Outputs Open SEM = VIH CER = CEL = VIH SEMR = SEML = VIH CEL or CER = VIH Active Port Outputs Open ISB1 COM’L. f = fMAX(3) S L 12 10 25 20 10 8 25 20 10 8 25 20 mA ISB2 COM’L. S L 40 30 82 72 35 25 72 62 35 25 72 62 mA f = fMAX(3) SEMR = SEML = VIH ISB3 Full Standby Current (Both Ports — All CMOS Level Inputs) Both Ports CEL and CER ≥ VCC - 0.2V VIN ≥ VCC - 0.2V or VIN ≤ 0.2V, f = 0(4) SEMR = SEML ≥ VCC - 0.2V One Port CEL or CER ≥ VCC - 0.2V SEMR = SEML ≥ VCC - 0.2V VIN ≥ VCC - 0.2V or VIN ≤ 0.2V Active Port Outputs Open f = fMAX(3) COM’L. S L 50 40 81 71 45 35 71 61 45 35 71 61 mA COM’L. S L 1.0 0.2 5 2.5 1.0 0.2 5 2.5 1.0 0.2 5 2.5 mA ISB4 Full Standby Current (One Port — All CMOS Level Inputs) NOTES: 2941 tbl 09 1. "X" in part numbers indicates power rating (S or L). 2. VCC = 3.3V, TA = +25°C. 3. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions” of input levels of GND to 3V. 4. f = 0 means no address or control lines change. 6.35 5 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE AC TEST CONDITIONS 3.3V Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND to 3.0V 5ns Max. 1.5V 1.5V Figures 1and 2 2941 tbl 10 2941 drw 05 3.3V 590Ω 590Ω DATAOUT DATAOUT BUSY INT 435Ω 30pF 435Ω 5pF 2941 drw 06 Figure 1. AC Output Test Load Figure 2. Output Load (For tLZ, tHZ, tWZ, tOW) Including scope and jig. AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(4) IDT70V05X25 Symbol READ CYCLE tRC tAA tACE tAOE tOH tLZ tHZ tPU tPD tSOP tSAA Read Cycle Time Address Access Time Chip Enable Access Time (3) IDT70V05X35 Min. 35 — — — 3 3 — 0 — 15 — Max. — 35 35 20 — — 20 — 35 — 45 IDT70V05X55 Min. 55 — — — 3 3 — 0 — 15 — Max. — 55 55 30 — — 25 — 50 — 65 Unit ns ns ns ns ns ns ns ns ns ns ns 2941 tbl 11 Parameter Min. 25 — — — 3 3 — Max. — 25 25 15 — — 15 — 25 — 35 Output Enable Access Time Output Hold from Address Change Output Low-Z Time (1, 2) Output High-Z Time(1, 2) Chip Enable to Power Up Time (2) (2) 0 — 15 — Chip Disable to Power Down Time Semaphore Address Access Time Semaphore Flag Update Pulse (OE or SEM) NOTES: 1. Transition is measured ± 200mV from Low or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization but not production tested. 3. To access RAM, CE = VIL, SEM = VIH. 4. "X" in part numbers indicates power rating (S or L). TIMING OF POWER-UP POWER-DOWN CE ICC ISB tPU 50% tPD 50% 2941 drw 07 6.35 6 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE WAVEFORM OF READ CYCLES(5) tRC ADDR tAA (4) tACE (4) tAOE (4) CE OE R/ W tLZ (1) tOH VALID DATA (4) DATAOUT tHZ (2) BUSYOUT tBDD (3, 4) 2941 drw 08 NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is de-asserted first, CE or OE. 3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA or tBDD. 5. SEM = VIH. AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE(5) IDT70V05X25 Symbol WRITE CYCLE tWC tEW tAW tAS tWP tWR tDW tHZ tDH tWZ tOW tSWRD tSPS Write Cycle Time Chip Enable to End-of-Write Address Set-up Time Write Pulse Width Write Recovery Time Data Valid to End-of-Write Output High-Z Time Data Hold Time(4) Write Enable to Output in High-Z Output Active from End-of-Write (1, 2) (1, 2, 4) (1, 2) (3) (3) IDT70V05X35 Min. 35 30 30 0 25 0 20 — 0 — 0 5 5 Max. — — — — — — — 20 — 20 — — — IDT70V05X55 Min. 55 45 45 0 40 0 30 — 0 — 0 5 5 Max. — — — — — — — 25 — 25 — — — Unit ns ns ns ns ns ns ns ns ns ns ns ns ns Parameter Min. 25 20 20 0 20 0 15 — 0 — 0 5 5 Max. — — — — — — — 15 — 15 — — — Address Valid to End-of-Write SEM Flag Write to Read Time SEM Flag Contention Window NOTES: 2941 tbl 12 1. Transition is measured ± 200mV from Low or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization but not production tested. 3. To access RAM, CE = VIL, SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. 4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 5. "X" in part numbers indicates power rating (S or L). 6.35 7 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE TIMING WAVEFORM OF WRITE CYCLE NO. 1, R/W CONTROLLED TIMING(1,3,5,8) tWC ADDRESS tHZ (7) OE tAW CE or SEM (9) tAS (6) R/ tWP (2) tWR (3) W tWZ (7) tOW (4) DATAOUT (4) tDW DATAIN tDH 2941 drw 09 TIMING WAVEFORM OF WRITE CYCLE NO. 2, CE CONTROLLED TIMING(1,3,5,8) CE tWC ADDRESS tAW CE or SEM R/ (9) tAS (6) tEW (2) tWR(3) W tDW tDH DATAIN 2941 drw 10 NOTES: 1. R/W or CE must be HIGH during all address transitions. 2. A write occurs during the overlap (tEW or tWP) of a LOW CE and a LOW R/W for memory array writing cycle. 3. tWR is measured from the earlier of CE or R/W (or SEM or R/W) going HIGH to the end of write cycle. 4. During this period, the I/O pins are in the output state and input signals must not be applied. 5. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state. 6. Timing depends on which enable signal is asserted last, CE, or R/W. 7. Timing depends on which enable signal is de-asserted first, CE, or R/W. 8. If OE is LOW during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP. 6.35 8 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE TIMING WAVEFORM OF SEMAPHORE READ AFTER WRITE TIMING, EITHER SIDE(1) tSAA A0-A2 VALID ADDRESS tWR tAW tEW tDW DATAIN VALID tAS tWP tDH VALID ADDRESS tACE tSOP DATAOUT VALID(2) tOH SEM I/O0 R/ W tSWRD tAOE OE Write Cycle Read Cycle 2941 drw 11 NOTES: 1. CE = VIH for the duration of the above timing (both write and read cycle). 2. "DATAOUT VALID" represents all I/O's (I/O0-I/O7) equal to the semaphore value. TIMING WAVEFORM OF SEMAPHORE WRITE CONTENTION(1,3,4) A0"A"-A2"A" MATCH SIDE (2) “A” R/ W"A" tSPS SEM"A" A0"B"-A2"B" MATCH SIDE(2) “B” R/ W"B" SEM"B" 2941 drw 12 NOTES: 1. DOR = DOL = VIL, CER = CEL = VIH, Semaphore Flag is released from both sides (reads as ones from both sides) at cycle start. 2. “A” may be either left or right port. “B” is the opposite port from “A”. 3. This parameter is measured from R/WA or SEMA going high to R/WB or SEMB going HIGH. 4. If tSPS is not satisfied, there is no guarantee which side will be granted the semaphore flag. 6.35 9 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(6) IDT70V05X25 Symbol BUSY TIMING (M/S = VIH) tBAA tBDA tBAC tBDC tAPS tBDD tWH Parameter Min. — — — — 5 — 20 Max. 25 25 25 25 — 35 — IDT70V05X35 Min. — — — — 5 — 25 Max. 35 35 35 35 — 40 — IDT70V05X55 Min. — — — — 5 — 25 Max. 45 45 45 45 — 50 — Unit ns ns ns ns ns ns ns BUSY Access Time from Address Match BUSY Disable Time from Address Not Matched BUSY Access Time from Chip Enable Low BUSY Disable Time from Chip Enable High Arbitration Priority Set-up Time(2) BUSY Disable to Valid Data(3) Write Hold After BUSY(5) BUSY Input to Write(4) Write Hold After BUSY(5) Write Pulse to Data Delay(1) Write Data Valid to Read Data Delay (1) BUSY TIMING (M/S = VIL) tWB tWH tWDD tDDD 0 20 — — — — 55 50 0 25 — — — — 65 60 0 25 — — — — 85 80 ns ns ns ns PORT-TO-PORT DELAY TIMING NOTES: 2941 tbl 13 1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Read With BUSY (M/S = VIH) or "Timing Waveform of Write With Port-To-Port Delay (M/S=VIL)". 2. To ensure that the earlier of the two ports wins. 3. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual), or tDDD – tDW (actual). 4. To ensure that the write cycle is inhibited during contention. 5. To ensure that a write cycle is completed after contention. 6. "X" is part numbers indicates power rating (S or L). TIMING WAVEFORM OF WRITE WITH PORT-TO-PORT READ WITH BUSY (M/S = VIH)(2,4,5) tWC ADDR"A" MATCH tWP R/ W"A" tDW tDH VALID tAPS (1) DATAIN "A" ADDR"B" MATCH tBDA tBDD BUSY"B" tWDD DATAOUT "B" NOTES: 1. To ensure that the earlier of the two ports wins. tAPS is ignored for M/S = VIL (slave). 2. CEL = CER = VIL. 3. OE = VIL for the reading port. 4. If M/S = VIL (slave), BUSY is an input. Then for this example BUSY"A" = VIH and BUSY"B" input is shown above. 5. All timing is the same for both left and right ports. Port "A" may be either the left or right Port. Port "B" is the port opposite from port "A". 6.35 VALID tDDD (3) 2941 drw 13 10 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE TIMING WAVEFORM OF SLAVE WRITE (M/S = VIL) tWP R/ "A" W tWB(3) BUSY"B" tWH (1) R/ "B" W (2) 2941 drw 14 WAVEFORM OF BUSY ARBITRATION CONTROLLED BY CE TIMING (M/S = VIH)(1) CE ADDR"A" and "B" ADDRESSES MATCH CE"A" tAPS (2) CE"B" tBAC tBDC BUSY"B" 2941 drw 15 WAVEFORM OF BUSY ARBITRATION CYCLE CONTROLLED BY ADDRESS MATCH TIMING (M/S = VIH)(1) ADDR"A" tAPS ADDR"B" tBAA (2) ADDRESS "N" MATCHING ADDRESS "N" tBDA BUSY"B" 2941 drw 16 NOTES: 1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”. 2. If tAPS is not satisfied, the busy signal will be asserted on one side or another but there is no guarantee on which side busy will be asserted. 6.35 11 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(1) IDT70V05X25 Symbol INTERRUPT TIMING tAS tWR tINS tINR Address Set-up Time Write Recovery Time Interrupt Set Time Interrupt Reset Time 0 0 — — — — 25 30 0 0 — — — — 30 35 0 0 — — — — 40 45 ns ns ns ns 2941 tbl 14 IDT70V05X35 Min. Max. IDT70V05X55 Min Max. Unit Parameter Min. Max. NOTE: 1. "X" in part numbers indicates power rating (S or L). WAVEFORM OF INTERRUPT TIMING(1) tWC ADDR"A" tAS (3) INTERRUPT SET ADDRESS (2) tWR (4) CE"A" R/ W"A" tINS (3) INT"B" 2941 drw 17 tRC ADDR"B" tAS (3) INTERRUPT CLEAR ADDRESS (2) CE"B" OE"B" tINR INT"B" (3) 2941 drw 18 NOTES: 1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”. 2. See Interrupt truth table. 3. Timing depends on which enable signal is asserted last. 4. Timing depends on which enable signal is de-asserted first. TRUTH TABLE III — INTERRUPT FLAG(1) Left Port R/WL L X X X Right Port A0L-A12L 1FFF X X 1FFE CEL L X X L OEL X X X L INTL X X L (3) (2) R/WR X X L X CER X L L X OER X L X X A0R-A12R X 1FFF 1FFE X INTR L (2) Function Set Right INTR Flag Set Left INTL Flag Reset Right INTR Flag Reset Left INTL Flag 2941 tbl 15 H(3) X X H NOTES: 1. Assumes BUSYL = BUSYR = VIH. 2. If BUSYL = VIL, then no change. 3. If BUSYR = VIL, then no change. 6.35 12 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE TRUTH TABLE IV — ADDRESS BUSY ARBITRATION Inputs Outputs CEL X H X L CER X X H L A0L-A12L A0R-A12R NO MATCH MATCH MATCH MATCH BUSYL(1) BUSYR(1) H H H (2) H H H (2) Function Normal Normal Normal Write Inhibit(3) NOTES: 2941 tbl 16 1. Pins BUSYL and BUSYR are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSYX outputs on the IDT70V05 are push pull, not open drain outputs. On slaves the BUSYX input internally inhibits writes. 2. L if the inputs to the opposite port were stable prior to the address and enable inputs of this port. H if the inputs to the opposite port became stable after the address and enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = Low will result. BUSYL and BUSYR outputs cannot be low simultaneously. 3. Writes to the left port are internally ignored when BUSYL outputs are driving low regardless of actual logic level on the pin. Writes to the right port are internally ignored when BUSYR outputs are driving low regardless of actual logic level on the pin. TRUTH TABLE V — EXAMPLE OF SEMAPHORE PROCUREMENT SEQUENCE(1,2) Functions No Action Left Port Writes "0" to Semaphore Right Port Writes "0" to Semaphore Left Port Writes "1" to Semaphore Left Port Writes "0" to Semaphore Right Port Writes "1" to Semaphore Left Port Writes "1" to Semaphore Right Port Writes "0" to Semaphore Right Port Writes "1" to Semaphore Left Port Writes "0" to Semaphore Left Port Writes "1" to Semaphore D0 - D7 Left 1 0 0 1 1 0 1 1 1 0 1 D0 - D7 Right 1 1 1 0 0 1 1 0 1 1 1 Semaphore free Left port has semaphore token No change. Right side has no write access to semaphore Right port obtains semaphore token No change. Left port has no write access to semaphore Left port obtains semaphore token Semaphore free Right port has semaphore token Semaphore free Left port has semaphore token Semaphore free 2941 tbl 17 Status NOTES: 1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70V05. 2. There are eight semaphore flags written to via I/O0 and read from all I/O's (I/O0-I/O7). These eight semaphores are addressed by A0 - A2. FUNCTIONAL DESCRIPTION The IDT70V05 provides two ports with separate control, address and I/O pins that permit independent access for reads or writes to any location in memory. The IDT70V05 has an automatic power down feature controlled by CE. The CE controls on-chip power down circuitry that permits the respective port to go into a standby mode when not selected (CE HIGH). When a port is enabled, access to the entire memory array is permitted. The message (8 bits) at 1FFE or 1FFF is user-defined. If the interrupt function is not used, address locations 1FFE and 1FFF are not used as mail boxes, but as part of the random access memory. Refer to Truth Table for the interrupt operation. BUSY LOGIC Busy Logic provides a hardware indication that both ports of the RAM have accessed the same location at the same time. It also allows one of the two accesses to proceed and signals the other side that the RAM is “Busy”. The busy pin can then be used to stall the access until the operation on the other side is completed. If a write operation has been attempted from the side that receives a busy indication, the write signal is gated internally to prevent the write from proceeding. The use of busy logic is not required or desirable for all applications. In some cases it may be useful to logically OR the busy outputs together and use any busy indication as an INTERRUPTS If the user chooses to use the interrupt function, a memory location (mail box or message center) is assigned to each port. The left port interrupt flag (INTL) is set when the right port writes to memory location 1FFE (HEX). The left port clears the interrupt by reading address location 1FFE. Likewise, the right port interrupt flag (INTR) is set when the left port writes to memory location 1FFF (HEX) and to clear the interrupt flag (INTR), the right port must read the memory location 1FFF. 6.35 13 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE MASTER Dual Port RAM CE BUSYR BUSYL SLAVE Dual Port RAM CE BUSYR BUSYL MASTER Dual Port RAM CE BUSYR BUSYL BUSYL SLAVE Dual Port RAM CE BUSYR BUSYR 2941 drw 19 BUSYL Figure 3. Busy and chip enable routing for both width and depth expansion with IDT70V05 RAMs. data in the slave. interrupt source to flag the event of an illegal or illogical operation. If the write inhibit function of busy logic is not desirable, the busy logic can be disabled by placing the part in slave mode with the M/S pin. Once in slave mode the BUSY pin operates solely as a write inhibit input pin. Normal operation can be programmed by tying the BUSY pins high. If desired, unintended write operations can be prevented to a port by tying the busy pin for that port low. The busy outputs on the IDT 70V05 RAM in master mode, are push-pull type outputs and do not require pull up resistors to operate. If these RAMs are being expanded in depth, then the busy indication for the resulting array requires the use of an external AND gate. SEMAPHORES The IDT70V05 is an extremely fast Dual-Port 8K x 8 CMOS Static RAM with an additional 8 address locations dedicated to binary semaphore flags. These flags allow either processor on the left or right side of the Dual-Port RAM to claim a privilege over the other processor for functions defined by the system designer’s software. As an example, the semaphore can be used by one processor to inhibit the other from accessing a portion of the Dual-Port RAM or any other shared resource. The Dual-Port RAM features a fast access time, and both ports are completely independent of each other. This means that the activity on the left port in no way slows the access time of the right port. Both ports are identical in function to standard CMOS Static RAM and can be read from, or written to, at the same time with the only possible conflict arising from the simultaneous writing of, or a simultaneous READ/WRITE of, a non-semaphore location. Semaphores are protected against such ambiguous situations and may be used by the system program to avoid any conflicts in the non-semaphore portion of the Dual-Port RAM. These devices have an automatic power-down feature controlled by CE, the Dual-Port RAM enable, and SEM, the semaphore enable. The CE and SEM pins control on-chip power down circuitry that permits the respective port to go into standby mode when not selected. This is the condition which is shown in Truth Table where CE and SEM are both high. Systems which can best use the IDT70V05 contain multiple processors or controllers and are typically very highspeed systems which are software controlled or software intensive. These systems can benefit from a performance increase offered by the IDT70V05's hardware semaphores, which provide a lockout mechanism without requiring complex programming. Software handshaking between processors offers the maximum in system flexibility by permitting shared resources to be allocated in varying configurations. The IDT70V05 does not use its semaphore flags to control any resources through WIDTH EXPANSION WITH BUSY LOGIC MASTER/SLAVE ARRAYS When expanding an IDT70V05 RAM array in width while using busy logic, one master part is used to decide which side of the RAM array will receive a busy indication, and to output that indication. Any number of slaves to be addressed in the same address range as the master, use the busy signal as a write inhibit signal. Thus on the IDT70V05 RAM the busy pin is an output if the part is used as a master (M/S pin = H), and the busy pin is an input if the part used as a slave (M/S pin = L) as shown in Figure 3. If two or more master parts were used when expanding in width, a split decision could result with one master indicating busy on one side of the array and another master indicating busy on one other side of the array. This would inhibit the write operations from one port for part of a word and inhibit the write operations from the other port for the other part of the word. The busy arbitration, on a master, is based on the chip enable and address signals only. It ignores whether an access is a read or write. In a master/slave array, both address and chip enable must be valid long enough for a busy flag to be output from the master before the actual write pulse can be initiated with the R/W signal. Failure to observe this timing can result in a glitched internal write inhibit signal and corrupted 6.35 DECODER 14 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE hardware, thus allowing the system designer total flexibility in system architecture. An advantage of using semaphores rather than the more common methods of hardware arbitration is that wait states are never incurred in either processor. This can prove to be a major advantage in very high-speed systems. HOW THE SEMAPHORE FLAGS WORK The semaphore logic is a set of eight latches which are independent of the Dual-Port RAM. These latches can be used to pass a flag, or token, from one port to the other to indicate that a shared resource is in use. The semaphores provide a hardware assist for a use assignment method called “Token Passing Allocation.” In this method, the state of a semaphore latch is used as a token indicating that shared resource is in use. If the left processor wants to use this resource, it requests the token by setting the latch. This processor then verifies its success in setting the latch by reading it. If it was successful, it proceeds to assume control over the shared resource. If it was not successful in setting the latch, it determines that the right side processor has set the latch first, has the token and is using the shared resource. The left processor can then either repeatedly request that semaphore’s status or remove its request for that semaphore to perform another task and occasionally attempt again to gain control of the token via the set and test sequence. Once the right side has relinquished the token, the left side should succeed in gaining control. The semaphore flags are active low. A token is requested by writing a zero into a semaphore latch and is released when the same side writes a one to that latch. The eight semaphore flags reside within the IDT70V05 in a separate memory space from the Dual-Port RAM. This address space is accessed by placing a low input on the SEM pin (which acts as a chip select for the semaphore flags) and using the other control pins (Address, OE, and R/W) as they would be used in accessing a standard Static RAM. Each of the flags has a unique address which can be accessed by either side through address pins A0 – A2. When accessing the semaphores, none of the other address pins has any effect. When writing to a semaphore, only data pin D0 is used. If a low level is written into an unused semaphore location, that flag will be set to a zero on that side and a one on the other side (see Table III). That semaphore can now only be modified by the side showing the zero. When a one is written into the same location from the same side, the flag will be set to a one for both sides (unless a semaphore request from the other side is pending) and then can be written to by both sides. The fact that the side which is able to write a zero into a semaphore subsequently locks out writes from the other side is what makes semaphore flags useful in interprocessor communications. (A thorough discussing on the use of this feature follows shortly.) A zero written into the same location from the other side will be stored in the semaphore request latch for that side until the semaphore is freed by the first side. When a semaphore flag is read, its value is spread into all data bits so that a flag that is a one reads as a one in all data bits and a flag containing a zero reads as all zeros. The read value is latched into one side’s output register when that side's semaphore select (SEM) and output enable (OE) signals go active. This serves to disallow the semaphore from changing state in the middle of a read cycle due to a write cycle from the other side. Because of this latch, a repeated read of a semaphore in a test loop must cause either signal (SEM or OE) to go inactive or the output will never change. A sequence WRITE/READ must be used by the semaphore in order to guarantee that no system level contention will occur. A processor requests access to shared resources by attempting to write a zero into a semaphore location. If the semaphore is already in use, the semaphore request latch will contain a zero, yet the semaphore flag will appear as one, a fact which the processor will verify by the subsequent read (see Table III). As an example, assume a processor writes a zero to the left port at a free semaphore location. On a subsequent read, the processor will verify that it has written successfully to that location and will assume control over the resource in question. Meanwhile, if a processor on the right side attempts to write a zero to the same semaphore flag it will fail, as will be verified by the fact that a one will be read from that semaphore on the right side during subsequent read. Had a sequence of READ/WRITE been used instead, system contention problems could have occurred during the gap between the read and write cycles. It is important to note that a failed semaphore request must be followed by either repeated reads or by writing a one into the same location. The reason for this is easily understood by looking at the simple logic diagram of the semaphore flag in Figure 4. Two semaphore request latches feed into a semaphore flag. Whichever latch is first to present a zero to the semaphore flag will force its side of the semaphore flag low and the other side high. This condition will continue until a one is written to the same semaphore request latch. Should the other side’s semaphore request latch have been written to a zero in the meantime, the semaphore flag will flip over to the other side as soon as a one is written into the first side’s request latch. The second side’s flag will now stay low until its semaphore request latch is written to a one. From this it is easy to understand that, if a semaphore is requested and the processor which requested it no longer needs the resource, the entire system can hang up until a one is written into that semaphore request latch. The critical case of semaphore timing is when both sides request a single token by attempting to write a zero into it at the same time. The semaphore logic is specially designed to resolve this problem. If simultaneous requests are made, the logic guarantees that only one side receives the token. If one side is earlier than the other in making the request, the first side to make the request will receive the token. If both requests arrive at the same time, the assignment will be arbitrarily made to one port or the other. One caution that should be noted when using semaphores is that semaphores alone do not guarantee that access to a resource is secure. As with any powerful programming technique, if semaphores are misused or misinterpreted, a soft- 6.35 15 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE ware error can easily happen. Initialization of the semaphores is not automatic and must be handled via the initialization program at power-up. Since any semaphore request flag which contains a zero must be reset to a one, all semaphores on both sides should have a one written into them at initialization from both sides to assure that they will be free when needed. USING SEMAPHORES—SOME EXAMPLES Perhaps the simplest application of semaphores is their application as resource markers for the IDT70V05’s Dual-Port RAM. Say the 8K x 8 RAM was to be divided into two 4K x 8 blocks which were to be dedicated at any one time to servicing either the left or right port. Semaphore 0 could be used to indicate the side which would control the lower section of memory, and Semaphore 1 could be defined as the indicator for the upper section of memory. To take a resource, in this example the lower 4K of Dual-Port RAM, the processor on the left port could write and then read a zero in to Semaphore 0. If this task were successfully completed (a zero was read back rather than a one), the left processor would assume control of the lower 4K. Meanwhile the right processor was attempting to gain control of the resource after the left processor, it would read back a one in response to the zero it had attempted to write into Semaphore 0. At this point, the software could choose to try and gain control of the second 4K section by writing, then reading a zero into Semaphore 1. If it succeeded in gaining control, it would lock out the left side. Once the left side was finished with its task, it would write a one to Semaphore 0 and may then try to gain access to Semaphore 1. If Semaphore 1 was still occupied by the right side, the left side could undo its semaphore request and perform other tasks until it was able to write, then read a zero into Semaphore 1. If the right processor performs a similar task with Semaphore 0, this protocol would allow the two processors to swap 4K blocks of Dual-Port RAM with each other. The blocks do not have to be any particular size and can even be variable, depending upon the complexity of the software using the semaphore flags. All eight semaphores could be used to divide the Dual-Port RAM or other shared resources into eight parts. Semaphores can even be assigned different meanings on different sides rather than being given a common meaning as was shown in the example above. Semaphores are a useful form of arbitration in systems like disk interfaces where the CPU must be locked out of a section of memory during a transfer and the I/O device cannot tolerate any wait states. With the use of semaphores, once the two devices has determined which memory area was “off-limits” to the CPU, both the CPU and the I/O devices could access their assigned portions of memory continuously without any wait states. Semaphores are also useful in applications where no memory “WAIT” state is available on one or both sides. Once a semaphore handshake has been performed, both processors can access their assigned RAM segments at full speed. Another application is in the area of complex data structures. In this case, block arbitration is very important. For this application one processor may be responsible for building and updating a data structure. The other processor then reads and interprets that data structure. If the interpreting processor reads an incomplete data structure, a major error condition may exist. Therefore, some sort of arbitration must be used between the two different processors. The building processor arbitrates for the block, locks it and then is able to go in and update the data structure. When the update is completed, the data structure block is released. This allows the interpreting processor to come back and read the complete data structure, thereby guaranteeing a consistent data structure. L PORT SEMAPHORE REQUEST FLIP FLOP D0 WRITE D Q R PORT SEMAPHORE REQUEST FLIP FLOP Q D D0 WRITE SEMAPHORE READ SEMAPHORE READ 2941 drw 20 Figure 4. IDT70V05 Semaphore Logic 6.35 16 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE ORDERING INFORMATION IDT XXXXX Device Type A Power 999 Speed A Package A Process/ Temperature Range Blank Commercial (0°C to +70°C) PF G J 64-pin TQFP (PN64-1) 68-pin PGA (G68-1) 68-pin PLCC (J68-1) 25 35 55 Speed in nanoseconds S L 70V05 Standard Power Low Power 64K (8K x 8) 3.3V Dual-Port RAM 2941 drw 21 6.35 17