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IDT70V3389S6BCI

IDT70V3389S6BCI

  • 厂商:

    IDT

  • 封装:

  • 描述:

    IDT70V3389S6BCI - HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2...

  • 数据手册
  • 价格&库存
IDT70V3389S6BCI 数据手册
HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features True Dual-Port memory cells which allow simultaneous access of the same memory location x High-speed clock to data access – Commercial: 4.2/5/6ns (max.) – Industrial: 5/6ns (max) x Pipelined output mode x Counter enable and reset features x Dual chip enables allow for depth expansion without additional logic x Full synchronous operation on both ports – 7.5ns cycle time, 133MHz operation (9.6 Gbps bandwidth) – Fast 4.2ns clock to data out – 1.8ns setup to clock and 0.7ns hold on all control, data, and x x IDT70V3389S x x x x address inputs @ 133MHz – Data input, address, byte enable and control registers – Self-timed write allows fast cycle time Separate byte controls for multiplexed bus and bus matching compatibility LVTTL- compatible, single 3.3V (±150mV) power supply for core LVTTL- compatible, selectable 3.3V (±150mV)/2.5V (±125mV) power supply for I/Os and control signals on each port Industrial temperature range (-40°C to +85°C) is available for selected speeds Available in a 128-pin Thin Quad Plastic Flatpack (TQFP), 208-pin fine pitch Ball Grid Array, and 256-pin Ball Grid Array Functional Block Diagram UBL LBL R/WL B W 0 L B W 1 L BB WW 10 RR UBR LBR R/WR CE0L CE1L CE0R CE1R OEL Dout0-8_L Dout9-17_L Dout0-8_R Dout9-17_R OER 64K x 18 MEMORY ARRAY I/O0 L - I/O1 7 L CLKL Din_L Din_R I/O0R - I/O17R CLKR A15L A0L CNTRSTL ADSL CNTENL Counter/ Address Reg. ADDR_L ADDR_R Counter/ Address Reg. A 15R A0R CNTRSTR ADSR CNTENR 4832 tbl 01 . APRIL 2001 1 ©2001 Integrated Device Technology, Inc. DSC 4832/8 IDT70V3389S High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Description: The IDT70V3389 is a high-speed 64K x 18 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times. With an input data register, the IDT70V3389 has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3389 can support an Ioperating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) remains at 3.3V. Pin Configuration(1,2,3,4) 1 I/O9L 2 NC 3 VSS 4 NC 5 NC 6 NC 7 A12L 8 A8L 9 NC 10 11 VDD CLKL 12 CNTENL 13 14 A4L A0L 15 OPTL 16 17 NC VSS A B C D E F G H J K L M N P R T U NC VSS NC VSS NC A13L A9L NC CE0L VSS ADSL A5L A1L VSS VDDQR I/O8L NC VDDQL I/O9R VDDQR VDD NC A14L A10L UBL CE1L VSS R/WL A6L A2L VDD I/O8R NC VSS NC VSS I/O10L NC A15L A11L A7L LBL VDD OEL CNTRSTL A3L VDD NC VDDQL I/O7L I/O7R I/O11L NC VDDQR I/O10R I/O6L NC VSS NC VDDQL I/O11R NC VSS VSS I/O6R NC VDDQR NC VSS I/O12L NC NC VDDQL I/O5L NC VDD NC VDDQR I/O12R 70V3389BF BF-208(5) 208-Pin fpBGA Top View(6) VDD NC VSS I/O5R VDDQL VDD VSS VSS VSS VDD VSS VDDQR I/O14R VSS I/O13R VSS I/O3R VDDQL I/O4R VSS NC I/O14L VDDQR I/O13L NC I/O3L VSS I/O4L VDDQL NC I/O15R VSS VSS NC I/O2R VDDQR NC VSS NC I/O15L I/O1R VDDQL NC I/O2L I/O16R I/O16L VDDQR NC NC NC A12R A8R NC VDD CLKR CNTEN R A4R NC I/O1L VSS NC VSS NC I/O17R NC NC A13R A9R NC UBR CE0R VSS ADSR A5R A1R VSS VDDQL I/O0R VDDQR NC I/O17L VDDQL VSS NC A14R A10R CE1R VSS R/WR A6R A2R VSS NC VSS NC VSS NC VDD NC A15R A11R A7R LBR VDD OER CNTRSTR A3R A0R VDD OPTR NC I/O0L 4832 tbl 02 NOTES: 1. All VDD pins must be connected to 3.3V power supply. 2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is set to VIL (0V). 3. All VSS pins must be connected to ground supply. 4. Package body is approximately 15mm x 15mm x 1.4mm with 0.8mm ball pitch. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking. 6.42 2 IDT70V3389S High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Pin Configuration(1,2,3,4) (con't.) 70V3389BC BC-256(5) 256-Pin BGA Top View(6) A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 NC B1 NC B2 NC B3 NC B4 A14L B5 A11L B6 A8L B7 NC B8 CE1L B9 OEL CNTENL B10 B11 A5L B12 A2L B13 A0L B14 NC B15 NC B16 NC C1 NC C2 NC C3 NC C4 A15L C5 A12L C6 A9L C7 UBL C8 CE0L R/WL CNTRSTL C9 C10 C11 A4L C12 A1L C13 VDD C14 NC C15 NC C16 NC D1 I/O9L D2 VSS D3 NC D4 A13L D5 A10L D6 A7L D7 NC D8 LBL D9 CLKL ADSL D10 D11 A6L D12 A3L D13 OPTL D14 NC D15 I/O8L D16 NC E1 I/O9R E2 NC E3 VDD E4 VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDD E5 E6 E7 E8 E9 E10 E11 E12 E13 NC E14 NC E15 I/O8R E16 I/O10R I/O10L F1 F2 NC F3 VDDQL F4 VDD F5 VDD F6 VSS F7 VSS F8 VSS F9 VSS F10 VDD F11 VDD VDDQR F12 F13 NC F14 I/O7L F15 I/O7R F16 I/O11L G1 NC G2 I/O11R VDDQL G3 G4 VDD G5 VSS G6 VSS G7 VSS G8 VSS G9 VSS G10 VSS G11 VDD VDDQR I/O6R G12 G13 G14 NC G15 I/O6L G16 NC H1 NC H2 I/O12L VDDQR H3 H4 VSS H5 VSS H6 VSS H7 VSS H8 VSS H9 VSS H10 VSS H11 VSS H12 VDDQL I/O5L H13 H14 NC H15 NC H16 NC J1 I/O12R J2 NC J3 VDDQR VSS J4 J5 VSS J6 VSS J7 VSS J8 VSS J9 VSS J10 VSS J11 VSS J12 VDDQL J13 NC J14 NC J15 I/O5R J16 I/O13L I/O14R I/O13R VDDQL K1 K2 K3 K4 VSS K5 VSS K6 VSS K7 VSS K8 VSS K9 VSS K10 VSS K11 VSS K12 VDDQR I/O4R I/O3R K13 K14 K15 I/O4L K16 NC L1 NC L2 I/O14L VDDQL L3 L4 VSS L5 VSS L6 VSS L7 VSS L8 VSS L9 VSS L10 VSS L11 VSS L12 VDDQR L13 NC L14 NC L15 I/O3L L16 I/O15L M1 NC M2 I/O15R VDDQR M3 M4 VDD M5 VSS M6 VSS M7 VSS M8 VSS M9 VSS M10 VSS M11 VDD M12 VDDQL I/O2L M13 M14 NC M15 I/O2R M16 I/O16R I/O16L N1 N2 NC N3 VDDQR N4 VDD N5 VDD N6 VSS N7 VSS N8 VSS N9 VSS N10 VDD N11 VDD N12 VDDQL I/O1R N13 N14 I/O1L N15 NC N16 NC P1 I/O17R P2 NC P3 VDD P4 VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL P5 P6 P7 P8 P9 P10 P11 P12 VDD P13 NC P14 I/O0R P15 NC P16 NC R1 I/O17L R2 NC R3 NC R4 A13R R5 A10R R6 A7R R7 NC R8 LBR R9 CLKR ADSR R10 R11 A6R R12 A3R R13 NC R14 NC R15 I/O0L R16 NC T1 NC T2 NC T3 NC T4 A15R T5 A12R T6 A9R T7 UBR T8 CE0R R/WR CNTRSTR T9 T10 T11 A4R T12 A1R T13 OPTR T14 NC T15 NC T16 , NC NC NC NC A14R A11R A8R NC CE1R OER CNTENR A5R A2R A0R NC NC 4832 drw 02c NOTES: 1. All VDD pins must be connected to 3.3V power supply. 2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is set to VIL (0V). 3. All VSS pins must be connected to ground supply. 4. Package body is approximately 17mm x 17mm x 1.4mm, with 1.0mm ball-pitch. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking. , 6.42 3 IDT70V3389S High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 105 104 103 A13L A12L A11L A10L A9L A8L A7L UBL LBL CE1L CE0L VDD VDD VSS VSS CLKL OEL R/WL ADSL CNTENL CNTRST L A6L A5L A4L A3L A2L Pin Configuration(1,2,3,4) (con't.) A14L A15L VSS NC IO9L IO9R VDDQL VSS IO10L IO10R VDDQR VSS IO11L IO11R IO12L IO12R VDD VDD VSS VSS IO13R IO13L IO14R IO14L IO15R IO15L VDDQL VSS IO16R IO16L VDDQR VSS IO17R IO17L NC NC A15R A14R 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 70V3389PRF PK-128(5) 128-Pin TQFP Top View(6) 102 101 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 A1L A0L OPTL NC (VSS)(7) IO8L IO8R NC (VSS)(7) VSS VDDQL IO7L IO7R VSS VDDQR IO6L IO6R IO5L IO5R VDD VDD VSS VSS IO4R IO4L IO3R IO3L IO2R IO2L VSS VDDQL IO1R IO1L VSS VDDQR IO0R IO0L OPTR A0R A1R 4832 drw 02a 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 NOTES: 1. All VDD pins must be connected to 3.3V power supply. 2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is set to VIL (0V). 3. All VSS pins must be connected to ground supply. 4. Package body is approximately 14mm x 20mm x 1.4mm. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking. 7. In the 70V3379 (32K x 18) and 70V3389 (64K x 18), pins 96 and 99 are NC. The upgrade devices 70V3399 (128K x 18) and 70V3319 (256K x 18) assign these pins as VSS. Customers who plan to take advantage of the upgrade path should treat these pins as VSS on the 70V3379 and 70V3389. If no upgrade is needed, the pins can be treated as NC. A 13R A 12R A 11R A 10R A9R A8R A7R UBR LBR CE1R CE0R VDD VDD VSS VSS CLKR OER R/WR ADSR CNTENR CNTRSTR A6R A5R A4R A3R A2R . 6.42 4 IDT70V3389S High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Pin Names Left Port CE0L, CE1L R/WL OEL A0L - A15L I/O0L - I/O17L CLKL ADSL CNTENL CNTRSTL UBL - LBL VDDQL OPTL VDD VSS Right Port CE0R, CE1R R/WR OER A0R - A15R I/O0R - I/O17R CLK R ADSR CNTENR CNTRSTR UBR - LBR VDDQR OPTR Chip Enables Read/Write Enable Output Enable Address Data Input/Output Clock Address Strobe Enable Counter Enable Counter Reset Byte Enables (9-bit bytes) Power (I/O Bus) (3.3V or 2.5V)(1) Option for selecting VDDQX(1,2) Power (3.3V)(1) Ground (0V) 4832 tbl 01 Names NOTES: 1. VDD, OPTX, and VDDQX must be set to appropriate operating levels prior to applying inputs on the I/Os and controls for that port. 2. OPTX selects the operating voltage levels for the I/Os and controls on that port. If OPTX is set to VIH (3.3V), then that port's I/Os and controls will operate at 3.3V levels and VDDQX must be supplied at 3.3V. If OPTX is set to VIL (0V), then that port's I/Os and controls will operate at 2.5V levels and VDDQX must be supplied at 2.5V. The OPT pins are independent of one another—both ports can operate at 3.3V levels, both can operate at 2.5V levels, or either can operate at 3.3V with the other at 2.5V. Truth Table I—Read/Write and Enable Control(1,2,3) OE X X X X L L L H CLK ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ CE0 L L L L L L L L CE1 H H H H H H H H UB H H L L H L L L LB H L H L L H L L R/W X L L L H H H X Upper Byte I/O9-18 High-Z High-Z DIN DIN High-Z DOUT DOUT High-Z Lower Byte I/O0-8 High-Z DIN High-Z DIN DOUT High-Z DOUT High-Z All Bytes Deselected Write to Lower Byte Only Write to Upper Byte Only Write to Both Bytes Read Lower Byte Only Read Upper Byte Only Read Both Bytes Outputs Disabled 4832 tbl 02 MODE NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. ADS, CNTEN, CNTRST = VIH. 3. OE is an asynchronous input signal. 6.42 5 IDT70V3389S High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Truth Table II—Address Counter Control(1,2) Address X An An X Previous Address X X Ap Ap Addr Used 0 An Ap Ap + 1 CLK ↑ ↑ ↑ ↑ ADS X L (4) CNTEN X X H L(5) CNTRST L (4) I/O(3) DI/O (0) DI/O (n) DI/O (p) DI/O (p+1) Counter Reset to Address 0 External Address Used MODE H H H H H External Address Blocked —Counter disabled (Ap reused) Counter Enabled—Internal Address generation 4832 tbl 03 NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. Read and write operations are controlled by the appropriate setting of R/W, CE0, CE1, BEn and OE. 3. Outputs are in Pipelined mode: the data out will be delayed by one cycle. 4. ADS and CNTRST are independent of all other memory control signals including CE0, CE 1 and BEn 5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other memory control signals including CE0, CE1, BEn. Recommended Operating Temperature and Supply Voltage(1,2) Grade Commercial Industrial Ambient Temperature 0OC to +70OC -40OC to +85OC GND 0V 0V VDD 3.3V + 150mV 3.3V + 150mV 4832 tbl 04 Recommended DC Operating Conditions with VDDQ at 2.5V Symbol VDD VDDQ VSS VIH VIH VIL Parameter Core Supply Voltage I/O Supply Voltage (3) Ground Input High Voltage (3) (Address & Control Inputs) Input High Voltage - I/O(3) Input Low Voltage Min. 3.15 2.375 0 1.7 1.7 -0.3(1) Typ. 3.3 2.5 0 ____ Max. 3.45 2.625 0 V DDQ + 125mV (2) Unit V V V V V V 4832 tb l 05a NOTES: 1. Industrial temperature: for specific speeds, packages and powers contact your sales office. 2. This is the parameter TA. This is the "instant on" case temperature. ____ ____ V DDQ + 125mV (2) 0.7 Absolute Maximum Ratings(1) Symbol VTERM(2) Rating Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature DC Output Current Commercial & Industrial -0.5 to +4.6 Unit V NOTES: 1. VIL > -1.5V for pulse width less than 10 ns. 2. VTERM must not exceed VDDQ + 125mV. 3. To select operation at 2.5V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VIL (0V), and V DDQX for that port must be supplied as indicated above. Recommended DC Operating Conditions with VDDQ at 3.3V Symbol Parameter Core Supply Voltage I/O Supply Voltage Ground Input High Voltage (Address & Control Inputs)(3) Input High Voltage - I/O(3) Input Low Voltage (3) Min. 3.15 3.15 0 2.0 2.0 -0.3 (1) Typ. 3.3 3.3 0 ____ Max. 3.45 3.45 0 VDDQ + 150mV (2) Unit V V V V V V 4832 tbl 05b TBIAS TSTG IOUT -55 to +125 -65 to +150 50 o C C VDD VDDQ VSS o mA 4832 tbl 06 VIH VIH VIL NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or 4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV. ____ ____ VDDQ + 150mV(2) 0.8 NOTES: 1. VIL > -1.5V for pulse width less than 10 ns. 2. VTERM must not exceed VDDQ + 150mV. 3. To select operation at 3.3V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VIH (3.3V), and VDDQX for that port must be supplied as indicated above. 6.42 6 IDT70V3389S High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Capacitance(1) Symbol CIN COUT (3) (TA = +25°C, F = 1.0MHZ) TQFP ONLY Parameter Input Capacitance Output Capacitance Conditions(2) VIN = 3dV VOUT = 3dV Max. 8 10.5 Unit pF pF 4832 tbl 07 NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. 3dV references the interpolated capacitance when the input and output switch from 0V to 3V or from 3V to 0V. 3. COUT also references CI/O. DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 3.3V ± 150mV) 70V3389S Symbol |ILI| |ILO| VOL (3.3V) VOH (3.3V) VOL (2.5V) VOH (2.5V) Parameter Input Leakage Current(1) Output Leakage Current Output Low Voltage (2) (2) Test Conditions VDDQ = Max., VIN = 0V to V DDQ CE0 = VIH or CE1 = VIL, VOUT = 0V to V DDQ IOL = + 4mA, VDDQ = Min. IOH = -4mA, VDDQ = Min. IOL = + 2mA, VDDQ = Min. IOH = -2mA, VDDQ = Min. Min. ___ Max. 10 10 0.4 ___ Unit µA µA V V V V 4832 tbl 08 ___ ___ Output High Voltage Output Low Voltage 2.4 ___ (2) 0.4 ___ Output High Voltage (2) 2.0 NOTE: 1. At VDD < - 2.0V input leakages are undefined. 2. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.4 for details. 6.42 7 IDT70V3389S High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(3) (VDD = 3.3V ± 150mV) 70V3389S4 Com 'l Only Sym bol IDD Param eter Dynam ic Ope rating Current (Bo th P orts A ctive ) S tand by Current (Bo th P orts - TTL Le ve l Inp uts ) S tand by Current (One Po rt - TTL Le ve l Inp uts ) Full S tandb y Current (B oth P orts - CM OS Le ve l Inp uts ) Full S tandb y Current (One Po rt - CM OS Le ve l Inp uts ) Test Condition CEL a nd CER= V IL , Outputs Disab led , f = fMAX (1) CEL = CER = V IH f = fMAX (1) CE"A" = V IL a nd CE"B" = V IH (5) A ctiv e P ort Outp uts Dis ab le d, f= fMAX(1) B oth P orts CEL a nd CER > V DD - 0 .2V, V IN > V DD - 0 .2V o r V IN < 0 .2V , f = 0 (2) Version COM 'L IND COM 'L IND COM 'L IND COM 'L IND S S S S S S S S S S Typ. (4) 375 ____ 70V3389S5 Com 'l & Ind Typ. (4) 285 285 105 105 190 190 6 6 180 180 Max. 360 415 145 175 260 300 15 30 260 300 70V3389S6 Com 'l & Ind Typ. (4) 245 245 95 95 175 175 6 6 170 170 Max. 310 360 125 150 225 260 15 30 225 260 4832 tbl 09 Max. 460 ____ Unit mA ISB1 145 ____ 190 ____ mA ISB2 265 ____ 325 ____ mA ISB3 6 ____ 15 ____ mA ISB4 CE"A" < 0 .2V and CE"B" > V DD - 0 .2V (5) COM 'L V IN > V DD - 0 .2V or V IN < 0 .2V, Ac tive IND P ort, Outp uts Disable d , f = f MAX(1) 265 ____ 325 ____ mA NOTES: 1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC , using "AC TEST CONDITIONS" at input levels of GND to 3V. 2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby. 3. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 4. VDD = 3.3V, TA = 25°C for Typ, and are not production tested. IDD DC (f=0) = 120mA (Typ). 5. CEX = V IL means CE 0X = V IL and CE1X = VIH CEX = VIH means CE0X = VIH or CE1X = VIL CEX < 0.2V means CE0X < 0.2V and CE1X > VCC - 0.2V CEX > VCC - 0.2V means CE0X > VCC - 0.2V or CE1X - 0.2V "X" represents "L" for left port or "R" for right port. 6.42 8 IDT70V3389S High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges AC Test Conditions Input Pulse Levels (Address & Controls) Input Pulse Levels (I/Os) Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND to 3.0V/GND to 2.35V GND to 3.0V/GND to 2.35V 3ns 1.5V/1.25V 1.5V/1.25V Figures 1, 2, and 3 4832 tbl 10 2.5V 833Ω DATAOUT 770Ω 5pF* , 3.3V 50Ω DATAOUT 10pF (Tester) Figure 1. AC Output Test load. 50Ω 1.5V/1.25 , 590Ω DATAOUT 4832 drw 03 435Ω 5pF* 4832 drw 04 , Figure 2. Output Test Load (For tCKLZ , tCKHZ, tOLZ, and tOHZ ). *Including scope and jig. 10.5pF is the I/O capacitance of this device, and 10pF is the AC Test Load Capacitance. 7 6 5 4 ∆tCD (Typical, ns) 3 2 1 • 20.5 -1 • 30 • 50 • 80 100 200 Capacitance (pF) 4832 drw 05 Figure 3. Typical Output Derating (Lumped Capacitive Load). 6.42 9 IDT70V3389S High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature Range (Read and Write Cycle Timing)(1,2) (VDD = 3.3V ± 150mV, TA = 0°C to +70°C) 70V3389S4 Com'l Only Symbol tCYC2 tCH2 tCL2 tR tF tSA tHA tSC tHC tSB tHB 70V3389S5 Com'l & Ind Min. 10 4 4 ____ 70V3389S6 Com'l & Ind Min. 12 5 5 ____ Parameter Clock Cycle Time (Pipelined) Clock High Time (Pipelined) Clock Low Time (Pipelined) Clock Rise Time Clock Fall Time Address Setup Time Address Hold Time Chip Enable Setup Time Chip Enable Hold Time Byte Enable Setup Time Byte Enable Hold Time R/ W S etup Time R/ W Hold Time Input Data Setup Time Input Data Hold Time ADS S etup Time ADS Hold Time CNTEN S etup Time CNTEN Hold Time CNTRST S etup Time CNTRST Hold Time Output Enable to Data Valid Output Enable to Output Low-Z Output Enable to Output High-Z Clock to Data Valid (Pipelined) Data Output Hold After Clock High Clock High to Output High-Z Clock High to Output Low-Z Min. 7.5 3 3 ____ Max. ____ Max. ____ Max. ____ Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ____ ____ ____ ____ ____ ____ 3 3 ____ 3 3 ____ 3 3 ____ ____ ____ ____ 1.8 0.7 1.8 0.7 1.8 0.7 1.8 0.7 1.8 0.7 1.8 0.7 1.8 0.7 1.8 0.7 ____ 2.0 0.7 2.0 0.7 2.0 0.7 2.0 0.7 2.0 0.7 2.0 0.7 2.0 0.7 2.0 0.7 ____ 2.0 1.0 2.0 1.0 2.0 1.0 2.0 1.0 2.0 1.0 2.0 1.0 2.0 1.0 2.0 1.0 ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ tSW tHW tSD tHD tSAD tHAD tSCN tHCN tSRST tHRST tOE (1) ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ 4 ____ 5 ____ 6 ____ tOLZ tOHZ tCD2 tDC tCKHZ tCKLZ 0 1 ____ 0 1 ____ 0 1 ____ 4 4.2 ____ 4.5 5 ____ 5 6 ____ 1 1 1 1 1 1 1 1.5 1 3 ____ 4.5 ____ 6 ____ Port-to-Port Delay tCO Clock-to-Clock Offset 6 ____ 8 ____ 10 ____ ns 4830 tbl 11 NOTES: 1. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE). 2. These values are valid for either level of VDDQ (3.3V/2.5V). See page 4 for details on selecting the desired I/O voltage levels for each port. 6.42 10 IDT70V3389S High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Read Cycle for Pipelined Operation(2) tCYC2 tCH2 CLK CE0 tCL2 tSC CE1 tSB UB, LB(0-3) tHC tSC (3) tHC tHB tSB (5) tHB R/W tSW tSA tHW tHA An + 1 (1 Latency) tCD2 Qn tCKLZ (1) ADDRESS (4) An An + 2 tDC Qn + 1 An + 3 DATAOUT Qn + 2 tOLZ (5) tOHZ OE (1) tOE NOTES: 4832 drw 06 1. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge. 2. ADS = VIL, CNTEN and CNTRST = VIH. 3. The output is disabled (High-Impedance state) by CE0 = VIH, CE1 = VIL, UB, LB = VIH following the next rising edge of the clock. Refer to Truth Table 1. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. If UB or LB was HIGH, then the appropriate Byte of DATA OUT for Qn + 2 would be disabled (High-Impedance state). Timing Waveform of a Multi-Device Pipelined Read(1,2) tCH2 CLK tSA ADDRESS(B1) tSC CE0(B1) tCYC2 tCL2 tHA A0 tHC tSC tCD2 tHC tCD2 Q0 tDC Q1 tDC A3 A4 tCKLZ A5 tCKHZ tCD2 Q3 tCKHZ A6 A1 A2 A3 A4 A5 A6 DATAOUT(B1) tSA ADDRESS(B2) tHA A0 A1 A2 tSC CE0(B2) tHC tSC tHC tCD2 tCKHZ Q2 tCKLZ tCKLZ 4832 drw 07 tCD2 Q4 DATAOUT(B2) NOTES: 1. B1 Represents Device #1; B2 Represents Device #2. Each Device consists of one IDT70V3389 for this waveform, and are setup for depth expansion in this example. ADDRESS(B1) = ADDRESS(B2) in this situation. 2. UB, LB, OE, and ADS = VIL; CE1(B1) , CE1(B2), R/W, CNTEN, and CNTRST = VIH. 6.42 11 IDT70V3389S High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Left Port Write to Pipelined Right Port Read(1,2) CLKL tSW R/WL tSA ADDRESSL tHA NO MATCH tHW MATCH tSD DATAINL tHD VALID tCO(3) CLKR tCD2 R/WR tSW tSA ADDRESSR tHW tHA NO MATCH MATCH DATAOUTR VALID tDC 4832 drw 08 NOTES: 1. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = V IH. 2. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to. 3. If tCO < minimum specified, then data from right port read is not valid until following right port clock cycle (ie, time from write to valid read on opposite port will be tCO + 2 tCYC2 + tCD2 ). If tCO > minimum, then data from right port read is available on first right port clock cycle (ie, time from write to valid read on opposite port will be tCO + tCYC + tCD2 ). Timing Waveform of Pipelined Read-to-Write-to-Read ( OE = VIL)(2) tCYC2 tCH2 CLK tCL2 CE0 tSC CE1 tSB UB, LB tHC tHB tSW tHW R/W tSW tHW ADDRESS (3) An tSA tHA An +1 An + 2 An + 2 tSD tHD Dn + 2 An + 3 An + 4 DATAIN (1) tCD2 Qn READ tCKHZ tCKLZ tCD2 Qn + 3 DATAOUT NOP (4) WRITE READ 4832 drw 09 NOTES: 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE0, UB, LB, and ADS = VIL; CE1, CNTEN , and CNTRST = VIH. "NOP" is "No Operation". 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity. 6.42 12 IDT70V3389S High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Pipelined Read-to-Write-to-Read ( OE Controlled)(2) tCH2 CLK CE0 tCYC2 tCL2 tSC CE1 tSB UB, LB tHC tHB tSW tHW R/W tSW tHW ADDRESS (3) An tSA tHA An +1 An + 2 tSD tHD An + 3 An + 4 An + 5 DATAIN (1) tCD2 Qn tOHZ (4) Dn + 2 Dn + 3 tCKLZ tCD2 Qn + 4 DATAOUT OE READ WRITE READ 4832 drw 10 NOTES: 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE 0, UB , LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH . 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. This timing does not meet requirements for fastest speed grade. This waveform indicates how logically it could be done if timing so allows. Timing Waveform of Pipelined Read with Address Counter Advance(1) tCH2 CLK tSA ADDRESS tHA tCYC2 tCL2 An tSAD tHAD ADS tSAD tHAD CNTEN tSCN tHCN tCD2 DATAOUT Qx - 1(2) Qx tDC Qn Qn + 1 Qn + 2(2) Qn + 3 READ EXTERNAL ADDRESS READ WITH COUNTER COUNTER HOLD READ WITH COUNTER 4832 drw 11 NOTES: 1. CE0, OE, UB, LB = VIL; CE1, R/W, and CNTRST = VIH. 2. If there is no address change via ADS = V IL (loading a new address) or CNTEN = VIL (advancing the address), i.e. ADS = VIH and CNTEN = VIH, then the data output remains constant for subsequent clocks. 6.42 13 IDT70V3389S High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Write with Address Counter Advance(1) tCH2 CLK tSA ADDRESS tHA tCYC2 tCL2 An INTERNAL(3) ADDRESS tSAD tHAD ADS An(7) An + 1 An + 2 An + 3 An + 4 tSCN tHCN CNTEN tSD tHD DATAIN Dn WRITE EXTERNAL ADDRESS Dn + 1 Dn + 1 Dn + 2 Dn + 3 Dn + 4 WRITE WRITE WITH COUNTER COUNTER HOLD WRITE WITH COUNTER 4832 drw 12 Timing Waveform of Counter Reset(2) tCH2 CLK tSA tHA (4) tCYC2 tCL2 ADDRESS INTERNAL(3) ADDRESS Ax tSW tHW R/W ADS CNTEN An 0 An + 1 An + 2 1 An An + 1 tSAD tHAD tSCN tHCN tSRST tHRST CNTRST tSD tHD D0 DATAIN (5) DATAOUT COUNTER RESET (6) Q0 WRITE ADDRESS 0 READ ADDRESS 0 READ ADDRESS 1 READ ADDRESS n Q1 READ ADDRESS n+1 Qn NOTES: 4832 drw 13 1. CE0, UB, LB, and R/W = VIL; CE1 and CNTRST = VIH. 2. CE0, UB, LB = V IL; CE1 = VIH. 3. The "Internal Address" is equal to the "External Address" when ADS = VIL and equals the counter output when ADS = VIH. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 6. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset cycle: ADDR 0 will be accessed. Extra cycles are shown here simply for clarification. 7. CNTEN = VIL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance. The ‘An +1’Address is written to during this cycle. 6.42 14 IDT70V3389S High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Functional Description The IDT70V3389 provides a true synchronous Dual-Port Static RAM interface. Registered inputs provide minimal set-up and hold times on address, data, and all critical control inputs. All internal registers are clocked on the rising edge of the clock signal, however, the self-timed internal write pulse is independent of the LOW to HIGH transition of the clock signal. An asynchronous output enable is provided to ease asynchronous bus interfacing. Counter enable inputs are also provided to stall the operation of the address counters for fast interleaved memory applications. A HIGH on CE0 or a LOW on CE1 for one clock cycle will power down the internal circuitry to reduce static power consumption. Multiple chip enables allow easier banking of multiple IDT70V3389s for depth expansion configurations. Two cycles are required with CE0 LOW and CE1 HIGH to re-activate the outputs. Depth and Width Expansion The IDT70V3389 features dual chip enables (refer to Truth Table I) in order to facilitate rapid and simple depth expansion with no requirements for external logic. Figure 4 illustrates how to control the various chip enables in order to expand two devices in depth. The IDT70V3389 can also be used in applications requiring expanded width, as indicated in Figure 4. Through combining the control signals, the devices can be grouped as necessary to accommodate applications needing 36-bits or wider. A16 IDT70V3389 CE0 CE1 VDD IDT70V3389 CE0 CE1 VDD Control Inputs Control Inputs IDT70V3389 CE1 CE0 IDT70V3389 CE1 CE0 UB, LB R/W, OE, CLK, ADS, CNTRST, CNTEN Control Inputs Control Inputs 4832 drw 14 . Figure 4. Depth and Width Expansion with IDT70V3389 6.42 15 IDT70V3389S High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Ordering Information IDT XXXXX Device Type A Power 99 Speed A Package A Process/ Temperature Range Blank I BF PRF BC Commercial (0°C to +70°C) Industrial (-40°C to +85°C) 208-pin fpBGA (BF-208) 128-pin TQFP (PK-128) 256-pin BGA (BC-256) Commercial Only Commercial & Industrial Commercial & Industrial Standard Power . 4 5 6 S Speed in nanoseconds 70V3389 1Mbit (64K x 18-Bit) Synchronous Dual-Port RAM 4832 drw 15A 6.42 16 IDT70V3389S High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Datasheet Document History 1/18/99: 3/15/99: 4/28/99: 6/8/99: 6/15/99: 7/14/99: 8/4/99: 10/1/99: 11/12/99: 2/28/00: 5/1/00: Initial Public Release Page 9 Additional notes Added fpBGA paclage Page 2 Changed package body height from 1.5mm to 1.4mm Page 5 Deleted note 6 for Table II Page 2 Corrected pin T3 to VDDQL Page 6 Improved power numbers Upgraded speed to 133MHz, added 2.5V I/O capability Replaced IDT logo Added new BGA package, added full 2.5V interface capability Page 2 Added ball pitch Page 3 Renamed pins Page 6 Made corrections to Truth Table Page 9 Changed Ω numbers in figure 2 Page 4 Added information to pin and pin notes Page 6 Increated storage temperature parameter Clarified TA Parameter Page 8 DC Electrical parameters–changed wording from "open" to "disabled" Removed note 7 on DC Characteristics table Removed Preliminary status Added Industrial Temperature Ranges and removed related notes 1/10/01: 4/10/01: CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com for Tech Support: 831-754-4613 DualPortHelp@idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 6.42 17
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