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IDT70V3569S5BFI

IDT70V3569S5BFI

  • 厂商:

    IDT

  • 封装:

  • 描述:

    IDT70V3569S5BFI - HIGH-SPEED 3.3V 16K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2...

  • 数据手册
  • 价格&库存
IDT70V3569S5BFI 数据手册
HIGH-SPEED 3.3V 16K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: x x IDT70V3569S x x x x True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 4.2/5/6ns (max.) – Industrial: 5/6ns (max) Pipelined output mode Counter enable and reset features Dual chip enables allow for depth expansion without additional logic Full synchronous operation on both ports – 7.5ns cycle time, 133MHz operation (9.6 Gbps bandwidth) – Fast 4.2ns clock to data out – 1.8ns setup to clock and 0.7ns hold on all control, data, and x x x x x address inputs @ 133MHz – Data input, address, byte enable and control registers – Self-timed write allows fast cycle time Separate byte controls for multiplexed bus and bus matching compatibility LVTTL- compatible, single 3.3V (±150mV) power supply for core LVTTL- compatible, selectable 3.3V (±150mV)/2.5V (±125mV) power supply for I/Os and control signals on each port Industrial temperature range (-40°C to +85°C) is available for selected speeds Available in a 208-pin Plastic Quad Flatpack (PQFP), 208-ball fine-pitch Ball Grid Array, and 256-pin Ball Grid Array Functional Block Diagram BE3L BE3R BE2L BE1L BE0L BE2R BE1R BE0R R/WL B W 0 L B W 1 L B W 2 L BB WW 33 LR BB WW 21 RR B W 0 R R/WR CE0L CE1L CE0R CE1R OEL Dout0-8_L Dout9-17_L Dout18-26_L Dout27-35_L Dout0-8_R Dout9-17_R Dout18-26_R Dout27-35_R OER 16K x 36 MEMORY ARRAY I/O0L- I/O35L Din_L Din_R I/O0R - I/O35R CLKL A13L A0L CNTRSTL ADSL CNTENL CLKR , Counter/ Address Reg. A 13R ADDR_L ADDR_R Counter/ Address Reg. A 0R CNTRSTR ADSR CNTENR 4831 tbl 01 APRIL 2001 1 ©2001 Integrated Device Technology, Inc. DSC 4831/8 IDT70V3569S High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Description: The IDT70V3569 is a high-speed 16K x 36 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times. With an input data register, the IDT70V3569 has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3569 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) remains at 3.3V. Pin Configuration(1,2,3,4) A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 IO19L IO18L B1 B2 VSS B3 NC B4 NC B5 NC B6 A12L B7 A8L B8 BE1L B9 VDD B10 CLKL CNTENL A4L B11 B12 B13 A0L B14 OPTL I/O17L B15 B16 VSS B17 I/O20R C1 VSS I/O18R C2 C3 VSS C4 NC C5 A13L C6 A9L C7 BE2L C8 CE0L C9 VSS C10 ADSL C11 A5L C12 A1L C13 VSS C14 VDDQR I/O16L I/O15R C15 C16 C17 VDDQL I/O19R VDDQR VDD D1 D2 D3 D4 NC D5 NC D6 A10L D7 BE3L D8 CE1L D9 VSS D10 R/WL D11 A6L D12 A2L D13 VDD I/O16R I/O15L D14 D15 D16 VSS D17 I/O22L E1 VSS E2 I/O21L I/O20L E3 E4 NC A11L A7L BE0L VDD OEL CNTRSTL A3L VDD I/O17R VDDQL I/O14L I/O14R E14 E15 E16 E17 I/O23L I/O22R VDDQR I/O21R F1 F2 F3 F4 I/O12L I/O13R F14 F15 VSS F16 I/O13L F17 VDDQL I/O23R I/O24L G1 G2 G3 VSS G4 VSS G14 I/O12R I/O11L VDDQR G15 G16 G17 I/O26L H1 VSS H2 I/O25L I/O24R H3 H4 I/O9L VDDQL I/O10L I/O11R VDD J1 I/O26R VDDQR I/O25R J2 J3 J4 70V3569BF BF-208(5) 208-Pin fpBGA Top View(6) H14 H15 H16 H17 VDD J14 IO9R J15 VSS J16 I/O10R J17 VDDQL K1 VDD K2 VSS K3 VSS K4 VSS K14 VDD K15 VSS VDDQR K16 K17 I/O28R L1 VSS L2 I/O27R L3 VSS L4 I/O7R VDDQL I/O8R L14 L15 L16 VSS L17 I/O29R I/O28L VDDQR I/O27L M1 M2 M3 M4 I/O6R M14 I/O7L M15 VSS M16 I/O8L M17 VDDQL I/O29L I/O30R N1 N2 N3 VSS N4 VSS N14 I/O6L I/O5R VDDQR N15 N16 N17 I/O31L P1 VSS I/O31R I/O30L P2 P3 P4 P5 P6 P7 P8 P9 P10 P11 P12 P13 I/O3R VDDQL I/O4R P14 P15 P16 I/O5L P17 I/O32R I/O32L VDDQR I/O35R R1 R2 R3 R4 NC R5 NC R6 A12R R7 A8R R8 BE1R R9 VDD R10 CLKR CNTEN R A4R R11 R12 R13 I/O2L R14 I/O3L R15 VSS R16 I/O4L R17 VSS T1 I/O33L I/O34R T2 T3 NC T4 NC T5 A13R T6 A9R T7 BE2R CE0R T8 T9 VSS T10 ADSR T11 A5R T12 A1R T13 VSS T14 VDDQL I/O1R VDDQR T15 T16 T17 I/O33R I/O34L VDDQL VSS U1 U2 U3 U4 NC U5 NC U6 A10R U7 BE3R U8 CE1R U9 VSS U10 R/WR A6R U12 A2R U13 VSS U14 I/O0R U15 VSS U16 I/O2R U17 VSS I/O35L VDD NC NC A11R A7R BE0R VDD OER A3R A0R VDD OPTR I/O0L I/O1L , NOTES: 1. All VDD pins must be connected to 3.3V power supply. 2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is set to VIL (0V). 3. All VSS pins must be connected to ground supply. 4. Package body is approximately 15mm x 15mm x 1.4mm, with 0.8mm ball pitch. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking. 4831 drw 02c 6.42 2 IDT70V3569S High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Pin Configuration(1,2,3,4) (con't.) 70V3569BC BC-256(5) 256-Pin BGA Top View(6) A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 NC B1 NC B2 NC B3 NC B4 NC B5 A11L B6 A8L B7 BE2L B8 CE1L B9 OEL CNTENL B10 B11 A5L B12 A2L B13 A0L B14 NC B15 NC B16 I/O18L C1 NC C2 NC C3 NC C4 NC C5 A12L C6 A9L C7 BE3L C8 CE0L R/WL CNTRSTL C9 C10 C11 A4L C12 A1L C13 VDD C14 I/O17L C15 NC C16 I/O18R I/O19L D1 D2 VSS D3 NC D4 A13L D5 A10L D6 A7L D7 BE1L D8 BE0L CLKL ADSL D9 D10 D11 A6L D12 A3L D13 OPTL I/O17R I/O16L D14 D15 D16 I/O20R I/O19R I/O20L E1 E2 E3 VDD E4 VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDD I/O15R I/O15L I/O16R E5 E6 E7 E8 E9 E10 E11 E12 E13 E14 E15 E16 I/O21R I/O21L I/O22L VDDQL F1 F2 F3 F4 VDD F5 VDD F6 VSS F7 VSS F8 VSS F9 VSS F10 VDD F11 VDD VDDQR I/O13L I/O14L I/O14R F12 F13 F14 F15 F16 I/O23L I/O22R I/O23R VDDQL G1 G2 G3 G4 VDD G5 VSS G6 VSS G7 VSS G8 VSS G9 VSS G10 VSS G11 VDD VDDQR I/O12R I/O13R I/O12L G12 G13 G14 G15 G16 I/O24R I/O24L I/O25L VDDQR H1 H2 H3 H4 VSS H5 VSS H6 VSS H7 VSS H8 VSS H9 VSS H10 VSS H11 VSS H12 VDDQL I/O10L I/O11L I/O11R H13 H14 H15 H16 I/O26L I/O25R I/O26R VDDQR VSS J1 J2 J3 J4 J5 VSS J6 VSS J7 VSS J8 VSS J9 VSS J10 VSS J11 VSS J12 VDDQL I/O9R J13 J14 IO9L I/O10R J15 J16 I/O27L I/O28R I/O27R VDDQL K1 K2 K3 K4 VSS K5 VSS K6 VSS K7 VSS K8 VSS K9 VSS K10 VSS K11 VSS K12 VDDQR I/O8R I/O7R K13 K14 K15 I/O8L K16 I/O29R I/O29L I/O28L VDDQL L1 L2 L3 L4 VSS L5 VSS L6 VSS L7 VSS L8 VSS L9 VSS L10 VSS L11 VSS L12 VDDQR I/O6R L13 L14 I/O6L L15 I/O7L L16 I/O30L I/O31R I/O30R VDDQR M1 M2 M3 M4 VDD M5 VSS M6 VSS M7 VSS M8 VSS M9 VSS M10 VSS M11 VDD M12 VDDQL I/O5L M13 M14 I/O4R I/O5R M15 M16 I/O32R I/O32L I/O31L VDDQR N1 N2 N3 N4 VDD N5 VDD N6 VSS N7 VSS N8 VSS N9 VSS N10 VDD N11 VDD N12 VDDQL I/O3R N13 N14 I/O3L N15 I/O4L N16 I/O33L I/O34R I/O33R P1 P2 P3 VDD P4 VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL P5 P6 P7 P8 P9 P10 P11 P12 VDD P13 I/O2L P14 I/O1R I/O2R P15 P16 I/O35R I/O34L R1 R2 NC R3 NC R4 A13R R5 A10R R6 A7R R7 BE1R BE0R CLKR ADSR R8 R9 R10 R11 A6R R12 A3R R13 I/O0L I/O0R R14 R15 I/O1L R16 I/O35L T1 NC T2 NC T3 NC T4 NC T5 A12R T6 A9R T7 BE3R CE0R R/WR CNTRSTR T8 T9 T10 T11 A4R T12 A1R T13 OPTR T14 NC T15 NC T16 , NC NC NC NC NC A11R A8R BE2R CE1R OER CNTENR A5R A2R A0R NC NC 4831 drw 02d NOTES: 1. All VDD pins must be connected to 3.3V power supply. 2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is set to VIL (0V). 3. All VSS pins must be connected to ground supply. 4. Package body is approximately 17mm x 17mm x 1.4mm, with 1.0mm ball-pitch. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking. , 6.42 3 IDT70V3569S High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Pin Configuration(1,2,3,4) (con't.) VSS VDDQR I/O18R I/O18L VSS VDD VSS NC NC NC NC NC NC NC A13L A12L A11L A10L A9L A8L A7L BE3L BE2L BE1L BE0L CE1L CE0L VDD VDD VSS VSS CLKL OEL R/ WL ADSL CNTENL CNTRSTL A6L A5L A4L A3L A2L A1L A0L VDD VDD VSS OPTL I/O17L I/O17R VDDQR VSS 208 207 206 205 204 203 202 201 200 199 198 197 196 195 194 193 192 191 190 189 188 187 186 185 184 183 182 181 180 179 178 177 176 175 174 173 172 171 170 169 168 167 166 165 164 163 162 161 160 159 158 157 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 I/O19L I/O19R I/O20L I/O20R VDDQL VSS I/O21L I/O21R I/O22L I/O22R VDDQR VSS I/O23L I/O23R I/O24L I/O24R VDDQL VSS I/O25L I/O25R I/O26L I/O26R VDDQR VSS VDD VDD VSS VSS VDDQL VSS I/O27R I/O27L I/O28R I/O28L VDDQR VSS I/O29R I/O29L I/O30R I/O30L VDDQL VSS I/O31R I/O31L I/O32R I/O32L VDDQR VSS I/O33R I/O33L I/O34R I/O34L 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 70V3569DR DR-208(5) 208-Pin PQFP Top View(6) 156 155 154 153 152 151 150 149 148 147 146 145 144 143 142 141 140 139 138 137 136 135 134 133 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 105 I/O16L I/O16R I/O15L I/O15R VSS VDDQL I/O14L I/O14R I/O13L I/O13R VSS VDDQR I/O12L I/O12R I/O11L I/O11R VSS VDDQL I/O10L I/O10R I/O9L I/O9R VSS VDDQR VDD VDD VSS VSS VSS VDDQL I/O8R I/O8L I/O7R I/O7L VSS VDDQR I/O6R I/O6L I/O5R I/O5L VSS VDDQL I/O4R I/O4L I/O3R I/O3L VSS VDDQR I/O2R I/O2L I/O1R I/O1L NOTES: 1. All VDD pins must be connected to 3.3V power supply. 2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is set to VIL (0V). 3. All VSS pins must be connected to ground supply. 4. Package body is approximately 28mm x 28mm x 3.5mm. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking. VSS VDDQL I/O35R I/O35L VDD VSS NC NC NC NC NC NC NC NC A13R A12R A11R A10R A9R A8R A7R BE3R BE2R BE1R BE0R CE1R CE0R VDD VDD VSS VSS CLKR OER R/WR ADSR CNTENR CNTRSTR A6R A5R A4R A3R A2R A1R A0R VDD VSS VSS OPTR I/O0L I/O0R VDDQL VSS 4831 drw 02a 6.42 4 IDT70V3569S High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Pin Names Left Port CE0L, CE1L R/ WL OEL A0L - A13L I/O0L - I/O35L CLKL ADSL CNTENL CNTRSTL BE0L - BE3L VDDQL OPTL VDD VSS Right Port CE0R, CE1R R/WR OER A0R - A13R I/O0R - I/O35R CLKR ADSR CNTENR CNTRSTR BE0R - BE3R VDDQR OPTR Chip Enables Read/Write Enable Output Enable Address Data Input/Output Clock Address Strobe Enable Counter Enable Counter Reset Byte Enables (9-bit bytes) Power (I/O Bus) (3.3V or 2.5V)(1) Option for selection VDDQX(1,2) Power (3.3V)(1) Ground (0V) 4831 tbl 01 Names NOTES: 1. VDD, OPTX, and VDDQX must be set to appropriate operating levels prior to applying inputs on the I/Os and controls for that port. 2. OPTX selects the operating voltage levels for the I/Os and controls on that port. If OPTX is set to VIH (3.3V), then that port's I/Os and controls will operate at 3.3V levels and VDDQX must be supplied at 3.3V. If OPTX is set to VIL (0V), then that port's I/Os and controls will operate at 2.5V levels and VDDQX must be supplied at 2.5V. The OPT pins are independent of one another—both ports can operate at 3.3V levels, both can operate at 2.5V levels, or either can operate at 3.3V with the other at 2.5V. Truth Table I—Read/Write and Enable Control(1,2,3,4) OE X X X X X X X X X X L L L L L L L H CLK ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ CE0 H X L L L L L L L L L L L L L L L L CE1 X L H H H H H H H H H H H H H H H H BE3 X X H H H H L H L L H H H L H L L L BE2 X X H H H L H H L L H H L H H L L L BE1 X X H H L H H L H L H L H H L H L L BE0 X X H L H H H L H L L H H H L H L L R/W X X X L L L L L L L H H H H H H H X Byte 3 I/O27-35 High-Z High-Z High-Z High-Z High-Z High-Z DIN High-Z DIN DIN High-Z High-Z High-Z DOUT High-Z DOUT DOUT High-Z Byte 2 I/O18-26 High-Z High-Z High-Z High-Z High-Z DIN High-Z High-Z DIN DIN High-Z High-Z DOUT High-Z High-Z DOUT DOUT High-Z Byte 1 I/O9-17 High-Z High-Z High-Z High-Z DIN High-Z High-Z DIN High-Z DIN High-Z DOUT High-Z High-Z DOUT High-Z DOUT High-Z Byte 0 I/O0-8 High-Z High-Z High-Z DIN High-Z High-Z High-Z DIN High-Z DIN DOUT High-Z High-Z High-Z DOUT High-Z DOUT High-Z MODE Deselected–Power Down Deselected–Power Down All Bytes Deselected Write to Byte 0 Only Write to Byte 1 Only Write to Byte 2 Only Write to Byte 3 Only Write to Lower 2 Bytes Only Write to Upper 2 bytes Only Write to All Bytes Read Byte 0 Only Read Byte 1 Only Read Byte 2 Only Read Byte 3 Only Read Lower 2 Bytes Only Read Upper 2 Bytes Only Read All Bytes Outputs Disabled 4831 tbl 02 NOTES: 1. "H" = V IH, "L" = VIL, "X" = Don't Care. 2. ADS , CNTEN, CNTRST = V IH. 3. OE is an asynchronous input signal. 4. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here. 6.42 5 IDT70V3569S High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Truth Table II—Address Counter Control(1,2) Address X An An X Previous Address X X Ap Ap Addr Used 0 An Ap Ap + 1 CLK(6) ↑ ↑ ↑ ↑ ADS X L (4) CNTEN X X H L (5) CNTRST L (4) I/O(3) DI/O (0) DI/O (n) DI/O (p) DI/O (p+1) Counter Reset to Address 0 External Address Used MODE H H H H H External Address Blocked —Counter disabled (Ap reused) Counter Enabled —Internal Address generation 4831 tbl 03 NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. Read and write operations are controlled by the appropriate setting of R/W, CE0, CE1, BEn and OE. 3. Outputs are in Pipelined mode: the data out will be delayed by one cycle. 4. ADS and CNTRST are independent of all other memory control signals including CE0, CE 1 and BEn 5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other memory control signals including CE0, CE1, BEn. Recommended Operating Temperature and Supply Voltage(1,2) Grade Commercial Industrial Ambient Temperature 0OC to +70OC -40OC to +85OC GND 0V 0V VDD 3.3V + 150mV 3.3V + 150mV 4831 tbl 04 Recommended DC Operating Conditions with VDDQ at 2.5V Symbol VDD VDDQ VSS VIH VIH VIL Parameter Core Supply Voltage I/O Supply Voltage Ground Input High Voltage(3) (Address & Control Inputs) Input High Voltage - I/O(3) Input Low Voltage (3) Min. 3.15 2.375 0 1.7 1.7 -0.3 (1) Typ. 3.3 2.5 0 ____ Max. 3.45 2.625 0 VDDQ + 125mV(2) VDDQ + 125mV(2) 0.7 Unit V V V V V V 4831 tbl 05a NOTES: 1. Industrial temperature: for specific speeds, packages and powers contact your sales office. 2. This is the parameter TA. This is the "instant on" case temperature. ____ ____ Absolute Maximum Ratings(1) Symbol VTERM(2) Rating Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature DC Output Current Commercial & Industrial -0.5 to +4.6 Unit V NOTES: 1. VIL > -1.5V for pulse width less than 10 ns. 2. VTERM must not exceed VDDQ + 125mV. 3. To select operation at 2.5V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VIL (0V), and V DDQX for that port must be supplied as indicated above. TBIAS TSTG IOUT -55 to +125 -65 to +150 50 o C C Recommended DC Operating Conditions with VDDQ at 3.3V Symbol Parameter Core Supply Voltage I/O Supply Voltage (3) Ground Input High Voltage (Address & Control Inputs)(3) Input High Voltage - I/O(3) Input Low Voltage Min. 3.15 3.15 0 2.0 2.0 -0.3(1) Typ. 3.3 3.3 0 ____ Max. 3.45 3.45 0 VDDQ + 150mV (2) Unit V V V V V V 4831 tbl 05b o VDD VDDQ VSS VIH VIH VIL mA 4831 tbl 06 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or 4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV. ____ VDDQ + 150mV(2) 0.8 ____ NOTES: 1. VIL > -1.5V for pulse width less than 10 ns. 2. VTERM must not exceed VDDQ + 150mV. 3. To select operation at 3.3V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VIH (3.3V), and VDDQX for that port must be supplied as indicated above. 6.42 6 IDT70V3569S High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Capacitance(1) Symbol CIN COUT (3) (TA = +25°C, F = 1.0MHZ) PQFP ONLY Parameter Input Capacitance Output Capacitance Conditions(2) VIN = 3dV VOUT = 3dV Max. 8 10.5 Unit pF pF 4831 tbl 07 NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. 3dV references the interpolated capacitance when the input and output switch from 0V to 3V or from 3V to 0V. 3. COUT also references CI/O. DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 3.3V ± 150mV) 70V3569S Symbol |ILI| |ILO| VOL (3.3V) VOH (3.3V) VOL (2.5V) VOH (2.5V) Parameter Input Leakage Current (1) Test Conditions VDDQ = Max., VIN = 0V to V DDQ CE0 = VIH or CE1 = VIL, VOUT = 0V to V DDQ IOL = + 4mA, VDDQ = Min. IOH = -4mA, VDDQ = Min. IOL = + 2mA, VDDQ = Min. IOH = -2mA, VDDQ = Min. Min. ___ Max. 10 10 0.4 ___ Unit µA µA V V V V 4831 tbl 08 Output Leakage Current Output Low Voltage (2) ___ ___ Output High Voltage (2) Output Low Voltage (2) Output High Voltage (2) 2.4 ___ 0.4 ___ 2.0 NOTE: 1. At VDD < - 2.0V input leakages are undefined. 2. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.4 for details. 6.42 7 IDT70V3569S High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(3) (VDD = 3.3V ± 150mV) 70V3569S4 Com 'l Only Sym bol IDD Param eter Dynam ic Ope rating Current (Bo th P orts A ctive ) S tand by Current (Bo th P orts - TTL Le ve l Inp uts ) S tand by Current (One Po rt - TTL Le ve l Inp uts ) Full S tandb y Current (B oth P orts - CM OS Le ve l Inp uts ) Full S tandb y Current (One Po rt - CM OS Le ve l Inp uts ) Test Condition CEL a nd CER= V IL , Outputs Disab led , f = fMAX (1) CEL = CER = V IH f = fMAX (1) CE"A" = V IL a nd CE"B" = V IH (5) A ctiv e P ort Outp uts Dis ab le d, f= fMAX(1) B oth P orts CEL a nd CER > V DD - 0 .2V, V IN > V DD - 0 .2V o r V IN < 0 .2V , f = 0 (2) Version COM 'L IND COM 'L IND COM 'L IND COM 'L IND S S S S S S S S S S Typ. (4) 375 ____ 70V3569S5 Com 'l & Ind Typ. (4) 285 285 105 105 190 190 6 6 180 180 Max. 360 415 145 175 260 300 15 30 260 300 70V3569S6 Com 'l & Ind Typ. (4) 245 245 95 95 175 175 6 6 170 170 Max. 310 360 125 150 225 260 15 30 225 260 4831 tbl 09 Max. 460 ____ Unit mA ISB1 145 ____ 190 ____ mA ISB2 265 ____ 325 ____ mA ISB3 6 ____ 15 ____ mA ISB4 CE"A" < 0 .2V and CE"B" > V DD - 0 .2V (5) COM 'L V IN > V DD - 0 .2V or V IN < 0 .2V, Ac tive IND P ort, Outp uts Disable d , f = f MAX(1) 265 ____ 325 ____ mA NOTES: 1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC , using "AC TEST CONDITIONS" at input levels of GND to 3V. 2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby. 3. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 4. VDD = 3.3V, TA = 25°C for Typ, and are not production tested. IDD DC (f=0) = 120mA (Typ). 5. CEX = V IL means CE 0X = V IL and CE1X = VIH CEX = VIH means CE0X = VIH or CE1X = VIL CEX < 0.2V means CE0X < 0.2V and CE1X > VCC - 0.2V CEX > VCC - 0.2V means CE0X > VCC - 0.2V or CE1X - 0.2V "X" represents "L" for left port or "R" for right port. 6.42 8 IDT70V3569S High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges AC Test Conditions Input Pulse Levels (Address & Controls) Input Pulse Levels (I/Os) Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND to 3.0V/GND to 2.35V GND to 3.0V/GND to 2.35V 3ns 1.5V/1.25V 1.5V/1.25V Figures 1, 2, and 3 4831 tbl 10 2.5V 833Ω DATAOUT 770Ω 5pF* , 3.3V 50Ω DATAOUT 10pF (Tester) Figure 1. AC Output Test load. , 50Ω 1.5V/1.25 , 590Ω DATAOUT 4831 drw 03 435Ω 5pF* 4831 drw 04 Figure 2. Output Test Load (For tCKLZ , tCKHZ, tOLZ, and tOHZ ). *Including scope and jig. 10.5pF is the I/O capacitance of this device, and 10pF is the AC Test Load Capacitance. 7 6 5 4 ∆tCD (Typical, ns) 3 2 1 • 20.5 -1 • 30 • 50 • 80 100 200 , Capacitance (pF) 4831 drw 05 · Figure 3. Typical Output Derating (Lumped Capacitive Load). 6.42 9 IDT70V3569S High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature Range (Read and Write Cycle Timing)(1,2) (VDD = 3.3V ± 150mV, TA = 0°C to +70°C) 70V3569S4 Com'l Only Symbol tCYC2 tCH2 tCL2 tR tF tSA tHA tSC tHC tSB tHB 70V3569S5 Com'l & Ind Min. 10 4 4 ____ 70V3569S6 Com'l & Ind Min. 12 5 5 ____ Parameter Clock Cycle Time (Pipelined) Clock High Time (Pipelined) Clock Low Time (Pipelined) Clock Rise Time Clock Fall Time Address Setup Time Address Hold Time Chip Enable Setup Time Chip Enable Hold Time Byte Enable Setup Time Byte Enable Hold Time R/ W S etup Time R/ W Hold Time Input Data Setup Time Input Data Hold Time ADS S etup Time ADS Hold Time CNTEN S etup Time CNTEN Hold Time CNTRST S etup Time CNTRST Hold Time Output Enable to Data Valid Output Enable to Output Low-Z Output Enable to Output High-Z Clock to Data Valid (Pipelined) Data Output Hold After Clock High Clock High to Output High-Z Clock High to Output Low-Z Min. 7.5 3 3 ____ Max. ____ Max. ____ Max. ____ Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ____ ____ ____ ____ ____ ____ 3 3 ____ 3 3 ____ 3 3 ____ ____ ____ ____ 1.8 0.7 1.8 0.7 1.8 0.7 1.8 0.7 1.8 0.7 1.8 0.7 1.8 0.7 1.8 0.7 ____ 2.0 0.7 2.0 0.7 2.0 0.7 2.0 0.7 2.0 0.7 2.0 0.7 2.0 0.7 2.0 0.7 ____ 2.0 1.0 2.0 1.0 2.0 1.0 2.0 1.0 2.0 1.0 2.0 1.0 2.0 1.0 2.0 1.0 ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ tSW tHW tSD tHD tSAD tHAD tSCN tHCN tSRST tHRST tOE (1) ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ 4 ____ 5 ____ 6 ____ tOLZ tOHZ tCD2 tDC tCKHZ tCKLZ 0 1 ____ 0 1 ____ 0 1 ____ 4 4.2 ____ 4.5 5 ____ 5 6 ____ 1 1 1 1 1 1 1 1.5 1 3 ____ 4.5 ____ 6 ____ Port-to-Port Delay tCO Clock-to-Clock Offset 6 ____ 8 ____ 10 ____ ns 4831 tbl 11 NOTES: 1. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE). 2. These values are valid for either level of VDDQ (3.3V/2.5V). See page 4 for details on selecting the desired I/O voltage levels for each port. 6.42 10 IDT70V3569S High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Read Cycle for Pipelined Operation(2) tCYC2 tCH2 CLK CE0 tCL2 tSC CE1 tSB BE(0-3) tHC tSC (3) tHC tHB tSB (5) tHB R/W tSW tSA tHW tHA An + 1 (1 Latency) tCD2 Qn tCKLZ (1) ADDRESS (4) An An + 2 tDC Qn + 1 An + 3 DATAOUT Qn + 2 tOLZ (5) tOHZ OE (1) tOE NOTES: 4831 drw 06 1. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge. 2. ADS = VIL, CNTEN and CNTRST = VIH. 3. The output is disabled (High-Impedance state) by CE0 = VIH, CE1 = VIL, BEn = VIH following the next rising edge of the clock. Refer to Truth Table 1. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. If BEn was HIGH, then the appropriate Byte of DATAOUT for Qn + 2 would be disabled (High-Impedance state). Timing Waveform of a Multi-Device Pipelined Read(1,2) tCH2 CLK tSA ADDRESS(B1) tSC CE0(B1) tCYC2 tCL2 tHA A0 tHC tSC tCD2 tHC tCD2 Q0 tDC Q1 tDC A3 A4 tCKLZ A5 tCKHZ tCD2 Q3 tCKHZ A6 A1 A2 A3 A4 A5 A6 DATAOUT(B1) tSA ADDRESS(B2) tHA A0 A1 A2 tSC CE0(B2) tHC tSC tHC tCD2 tCKHZ Q2 tCKLZ tCKLZ 4831 drw 07 tCD2 Q4 DATAOUT(B2) NOTES: 1. B1 Represents Device #1; B2 Represents Device #2. Each Device consists of one IDT70V3569 for this waveform, and are setup for depth expansion in this example. ADDRESS(B1) = ADDRESS(B2) in this situation. 2. BEn, OE, and ADS = VIL; CE 1(B1), CE 1(B2), R/W, CNTEN, and CNTRST = VIH. 6.42 11 IDT70V3569S High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Left Port Write to Pipelined Right Port Read(1,2) CLKL tSW R/WL tSA ADDRESSL tHA NO MATCH tHW MATCH tSD DATAINL tHD VALID tCO(3) CLKR tCD2 R/WR tSW tSA ADDRESSR tHW tHA NO MATCH MATCH DATAOUTR VALID tDC 4831 drw 08 NOTES: 1. CE0, BEn, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH. 2. OE = VIL for the Right Port, which is being read from. OE = V IH for the Left Port, which is being written to. 3. If tCO < minimum specified, then data from right port read is not valid until following right port clock cycle (ie, time from write to valid read on opposite port will be tCO + 2 tCYC2 + tCD2 ). If tCO > minimum, then data from right port read is available on first right port clock cycle (ie, time from write to valid read on opposite port will be tCO + tCYC + tCD2 ). Timing Waveform of Pipelined Read-to-Write-to-Read tCYC2 (OE = VIL)(2) tCH2 tCL2 CLK CE0 tSC CE1 tSB BEn tHC tHB tSW tHW R/W tSW tHW ADDRESS (3) An tSA tHA An +1 An + 2 An + 2 tSD tHD Dn + 2 An + 3 An + 4 DATAIN (1) tCD2 Qn READ tCKHZ tCKLZ tCD2 Qn + 3 DATAOUT NOP (4) WRITE READ 4831 drw 09 NOTES: 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE0, BEn, and ADS = V IL; CE1, CNTEN, and CNTRST = V IH. "NOP" is "No Operation". 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity. 6.42 12 IDT70V3569S High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Pipelined Read-to-Write-to-Read (OE Controlled)(2) tCH2 CLK CE0 tCYC2 tCL2 tSC CE1 tSB BEn tHC tHB tSW tHW R/W tSW tHW ADDRESS (3) An tSA tHA An +1 An + 2 tSD tHD An + 3 An + 4 An + 5 DATAIN (1) tCD2 Qn tOHZ (4) Dn + 2 Dn + 3 tCKLZ tCD2 Qn + 4 DATAOUT OE READ WRITE READ 4831 drw 10 NOTES: 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE 0, BEn, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH. 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. This timing does not meet requirements for fastest speed grade. This waveform indicates how logically it could be done if timing so allows. Timing Waveform of Pipelined Read with Address Counter Advance(1) tCH2 CLK tSA ADDRESS tHA tCYC2 tCL2 An tSAD tHAD ADS tSAD tHAD CNTEN tSCN tHCN tCD2 DATAOUT Qx - 1(2) Qx tDC Qn Qn + 1 Qn + 2(2) Qn + 3 READ EXTERNAL ADDRESS READ WITH COUNTER COUNTER HOLD READ WITH COUNTER 4831 drw 11 NOTES: 1. CE0, OE, BEn = VIL; CE1, R/W, and CNTRST = V IH. 2. If there is no address change via ADS = V IL (loading a new address) or CNTEN = VIL (advancing the address), i.e. ADS = VIH and CNTEN = VIH, then the data output remains constant for subsequent clocks. 6.42 13 IDT70V3569S High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Write with Address Counter Advance(1) tCH2 CLK tSA ADDRESS tHA tCYC2 tCL2 An INTERNAL(3) ADDRESS tSAD tHAD ADS An(7) An + 1 An + 2 An + 3 An + 4 tSCN tHCN CNTEN tSD tHD DATAIN Dn WRITE EXTERNAL ADDRESS Dn + 1 Dn + 1 Dn + 2 Dn + 3 Dn + 4 WRITE WRITE WITH COUNTER COUNTER HOLD WRITE WITH COUNTER 4831 drw 12 Timing Waveform of Counter Reset(2) tCH2 CLK tSA tHA (4) tCYC2 tCL2 ADDRESS INTERNAL(3) ADDRESS Ax tSW tHW R/W ADS CNTEN An 0 An + 1 An + 2 1 An An + 1 tSAD tHAD tSCN tHCN tSRST tHRST CNTRST tSD tHD D0 DATAIN (5) DATAOUT COUNTER RESET (6) Q0 WRITE ADDRESS 0 READ ADDRESS 0 READ ADDRESS 1 READ ADDRESS n Q1 READ ADDRESS n+1 Qn NOTES: 4831 drw 13 1. CE0, BEn, and R/ W = V IL; CE1 and CNTRST = VIH. 2. CE0, BEn = VIL; CE1 = VIH. 3. The "Internal Address" is equal to the "External Address" when ADS = VIL and equals the counter output when ADS = VIH. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 6. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset cycle: ADDR 0 will be accessed. Extra cycles are shown here simply for clarification. 7. CNTEN = VIL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance. The ‘An +1’Address is written to during this cycle. 6.42 14 IDT70V3569S High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Functional Description The IDT70V3569 provides a true synchronous Dual-Port Static RAM interface. Registered inputs provide minimal set-up and hold times on address, data, and all critical control inputs. All internal registers are clocked on the rising edge of the clock signal, however, the self-timed internal write pulse is independent of the LOW to HIGH transition of the clock signal. An asynchronous output enable is provided to ease asynchronous bus interfacing. Counter enable inputs are also provided to stall the operation of the address counters for fast interleaved memory applications. A HIGH on CE0 or a LOW on CE1 for one clock cycle will power down the internal circuitry to reduce static power consumption. Multiple chip enables allow easier banking of multiple IDT70V3569s for depth expansion configurations. Two cycles are required with CE0 LOW and CE1 HIGH to re-activate the outputs. Depth and Width Expansion The IDT70V3569 features dual chip enables (refer to Truth Table I) in order to facilitate rapid and simple depth expansion with no requirements for external logic. Figure 4 illustrates how to control the various chip enables in order to expand two devices in depth. The IDT70V3569 can also be used in applications requiring expanded width, as indicated in Figure 4. Through combining the control signals, the devices can be grouped as necessary to accommodate applications needing 72-bits or wider. A15 IDT70V3569 CE0 CE1 VDD IDT70V3569 CE0 CE1 VDD Control Inputs Control Inputs IDT70V3569 CE1 CE0 IDT70V3569 CE1 CE0 BE, R/W, OE, CLK, ADS, CNTRST, CNTEN Control Inputs Control Inputs 4831 drw 14 Figure 4. Depth and Width Expansion with IDT70V3569 6.42 15 IDT70V3569S High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges Ordering Information IDT XXXXX Device Type A Power 99 Speed A Package A Process/ Temperature Range Blank I BF DR BC 4 5 6 S Commercial (0°C to +70°C) Industrial (-40°C to +85°C) 208-pin fpBGA (BF-208) 208-pin PQFP (DR-208) 256-pin BGA (BC-256) Commercial Only Commercial & Industrial Commercial & Industrial Standard Power , Speed in nanoseconds 70V3569 576Kbit (16K x 36-Bit) Synchronous Dual-Port RAM 4831 drw 15A Datasheet Document History 1/8/99: 3/12/99: 4/28/99: 6/8/99: Initial Public Release Added fpBGA package Fixed typo on page 10 Changed drawing format Page 2 Changed package body dimensions Page 3 Fixed typo Page 5 Deleted note 6 for Table II Page 2 Fixed typographical error Page 6 Improved power number Upgraded speed to 133MHz, added 2.5V I/O capability Page 4 Corrected I/O numbers in Truth Table I Replaced IDT logo Added new BGA packages, added full 2.5V interface capability Page 6 Updated Truth Table II Increated storage temperature parameter Clarified TA Parameter Page 8 DC Electrical parameters–changed wording from "open" to "disabled" Removed note 7 on DC Electrical Characteristics table Removed Preliminary status Added Industrial Temperature Ranges and removed related notes 6/15/99: 8/4/99: 10/14/99: 10/19/99: 11/12/99: 4/10/00: 1/12/01: 4/10/01: CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-5166 fax: 408-492-8674 www.idt.com for Tech Support: 831-754-4613 DualPortHelp@idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 6.42 16
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