IDT71124S15Y

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise. Equal access and cycle times – Commercial and Industrial: 12/15/20ns One Chip Select plus one Output Enable pin Bidirectional inputs and outputs directly TTL-compatible Low power consumption via chip deselect Available in a 32-pin 400 mil Plastic SOJ. IDT71124 Description The IDT71124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a costeffective solution for high-speed memory needs. The JEDEC centerpower/GND pinout reduces noise generation and improves system performance. The IDT71124 has an output enable pin which operates as fast as 6ns, with address access times as fast as 12ns available. All bidirectional inputs and outputs of the IDT71124 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. The IDT71124 is packaged in a 32-pin 400 mil Plastic SOJ. x x x x x x x Functional Block Diagram A0 • • • A16 ADDRESS DECODER • • • 1,048,576-BIT MEMORY ARRAY I/O0 - I/O7 • 8 I/O CONTROL 8 8 , WE OE CS CONTROL LOGIC 3514 drw 01 FEBRUARY 2001 1 ©2000 Integrated Device Technology, Inc. DSC-3514/10 IDT71124 CMOS Static RAM 1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges Pin Configuration A0 A1 A2 A3 CS I/O0 I/O1 VCC GND I/O2 I/O3 WE A4 A5 A6 A7 1 32 2 31 3 30 4 29 5 28 6 SO32-3 27 7 26 8 25 9 24 23 10 22 11 21 12 13 20 14 19 15 18 16 17 A16 A15 A14 A13 OE I/O7 I/O6 GND VCC I/O5 I/O4 A12 A11 A10 A9 A8 Absolute Maximum Ratings(1) Symbol VTERM (2) TA TBIAS TSTG Rating Terminal Voltage with Respect to GND Operating Temperature Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value -0.5 to +7.0(2) 0 to +70 -55 to +125 -55 to +125 1.25 50 Unit V o o C C C o , PT IOUT W mA 3514 tbl 02 3514 drw 02 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliabilty. 2. VTERM must not exceed Vcc + 0.5V. SOJ Top View Truth Table(1,2) CS L L L H VHC(3) OE L X H X X WE H L H X X I/O DATAOUT DATAIN High-Z High-Z High-Z Function Read Data Write Data Output Disabled Deselected - Standby (I SB) Deselected - Standby (I SB1) 3514 tbl 01 Capacitance Symbol CIN CI/O (TA = +25°C, f = 1.0MHz) Parameter(1) Input Capacitance I/O Capacitance Conditions VIN = 3dV VOUT = 3dV Max. 8 8 Unit pF pF 3514 tbl 03 NOTE: 1. This parameter is guaranteed by device characterization, but is not production tested. NOTES: 1. H = VIH, L = VIL, x = Don't care. 2. VLC = 0.2V, VHC = VCC -0.2V. 3. Other inputs ≥ VHC or ≤ VLC. Recommended Operating Temperature and Supply Voltage Grade Commercial Industrial Temperature 0°C to +70°C –40°C to +85°C GND 0V 0V VCC 5.0V ± 10% 5.0V ± 10% 3514 tbl 04 Recommended DC Operating Conditions Symbol VCC GND VIH VIL Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min. 4.5 0 2.2 -0.5 (1) Typ. 5.0 0 ____ ____ Max. 5.5 0 VCC +0.5 0.8 Unit V V V V 3514 tbl 05 6.42 2 IDT 71124 CMOS Static RAM 1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges DC Electrical Characteristics Symbol |ILI| |ILO| VOL VOH Parameter Input Leakage Current Output Leakage Current Output Low Voltage Output High Voltage (VCC = 5.0V ± 10%, Commercial and Industrial Temperature Ranges) Test Conditions VCC = M ax., VIN = GND to VCC VCC = M ax., CS = VIH, VOUT = GND to VCC IOL = 8mA, VCC = M in. IOH = –4mA, VCC = M in. Min. ___ ___ ___ Max. 5 5 0.4 ___ Unit µA µA V V 3514 tbl 06 2.4 (VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC – 0.2V) 71124S12 Symbol ICC ISB Parameter Dynamic Operating Current CS < VIL, Outputs Open, VCC = Max., f = fMAX(2) Standby Power Supply Current (TTL Level) CS > VIH, Outputs Open, VCC = Max., f = fMAX(2) Full Standby Power Supply Current (CMOS Level) CS > VHC, Outputs Open, VCC = Max., f = 0(2) VIN < VLC o r VIN > VHC Com'l. 160 40 10 Ind. 160 40 10 71124S15 Com'l. 155 40 10 Ind. 155 40 10 71124S20 Com'l. 140 40 10 Ind. 140 40 10 Unit mA mA mA DC Electrical Characteristics(1) ISB1 NOTES: 1. All values are maximum guaranteed values. 2. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing. 3514 tbl 07 AC Test Conditions Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels AC Test Load GND to 3.0V 3ns 1.5V 1.5V See Figure 1 and 2 3514 tbl 08 AC Test Loads 5V 480Ω DATA OUT 30pF 255Ω 3514 drw 03 5V 480Ω DATA OUT . 5pF* 255Ω 3514 drw 04 . *Including jig and scope capacitance. Figure 1. AC Test Load Figure 2. AC Test Load (for tCLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ) 6.42 3 IDT71124 CMOS Static RAM 1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges AC Electrical Characteristics (VCC = 5.0V ± 10%, Commercial and Industrial Temperature Ranges) 71124S12 Sym bol READ CYCLE tRC tAA tACS tCLZ(1) tCHZ tOE tOLZ(1) tOHZ(1) tOH tPU(1) tPD(1) WRITE CYCLE tWC tAW tCW tAS tWP tWR tDW tDH tOW (1) (1) 71124S15 Min. Max. 71124S20 Min. Max. Unit Param eter Min. Max. Re ad Cyc le Tim e A d d re ss A cc e ss Tim e Chip S e le ct A cc e ss Tim e Chip Se le c t to Outp ut in Lo w-Z Chip De se le c t to Outp ut in Hig h-Z Outp ut E nab le to Outp ut Valid Outp ut E nab l e to Outp ut in Lo w-Z Outp ut Disab le to O utp ut in Hig h-Z Outp ut Ho ld fro m A d d re ss Chang e Chip S e le ct to P o we r-Up Tim e Chip De s e le c t to P o we r-Do wn Tim e 12 ____ ____ ____ 15 ____ ____ ____ 20 ____ ____ ____ ns ns ns ns ns ns ns ns ns ns ns 12 12 ____ 15 15 ____ 20 20 ____ 3 0 ____ 3 0 ____ 3 0 ____ 6 6 ____ 7 7 ____ 8 8 ____ 0 0 4 0 ____ 0 0 4 0 ____ 0 0 4 0 ____ 5 ____ 5 ____ 7 ____ ____ ____ ____ 12 15 20 Write Cy c le Tim e A d d re ss V alid to End o f W rite Chip S e le c t to E nd o f W rite A d d re ss S e t-up Tim e Write Pulse W id th Write Re co v e ry Tim e Data Valid to E nd -o f-Write Data Ho ld Tim e Outp ut active fro m End -o f-Write W rite E nab le to Outp ut in Hig h-Z 12 8 8 0 8 0 6 0 3 0 ____ ____ ____ ____ ____ ____ ____ ____ 15 12 12 0 12 0 8 0 3 0 ____ ____ ____ ____ ____ ____ ____ ____ 20 15 15 0 15 0 9 0 4 0 ____ ____ ____ ____ ____ ____ ____ ____ ns ns ns ns ns ns ns ns ns ns 3514 tbl 09 ____ ____ ____ tWHZ(1) 5 5 8 NOTE: 1. This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested. 6.42 4 IDT 71124 CMOS Static RAM 1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges Timing Waveform of Read Cycle No. 1(1) tRC ADDRESS tAA OE tOE CS tOLZ (5) (5) (3) tACS tCLZ DATAOUT tCHZ (5) tOHZ (5) HIGH IMPEDANCE DATAOUT VALID tPD . VCC SUPPLY ICC CURRENT ISB tPU 3514 drw 05 Timing Waveform of Read Cycle No. 2(1,2,4) tRC ADDRESS tAA tOH DATAOUT PREVIOUS DATAOUT VALID tOH DATAOUT VALID 3514 drw 06 . NOTES: 1. WE is HIGH for Read Cycle. 2. Device is continuously selected, CS is LOW. 3. Address must be valid prior to or coincident with the later of CS transition LOW; otherwise tAA is the limiting parameter. 4. OE is LOW. 5. Transition is measured ±200mV from steady state. 6.42 5 IDT71124 CMOS Static RAM 1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,4) tWC ADDRESS tAW CS tWR tAS WE tWHZ DATAOUT (3) (5) tWP (2) . tOW HIGH IMPEDANCE tDW tDH (5) tCHZ (5) (3) DATAIN DATAIN VALID 3514 drw 07 Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,4) tWC ADDRESS tAW CS tAS WE tCW tWR . tDW DATAIN DATAIN VALID 3514 drw 08 tDH NOTES: 1. A write occurs during the overlap of a LOW CS and a LOW WE. 2. OE is continuously HIGH. During a WE controlled write cycle with OE LOW, tWP must be greater than or equal to tWHZ + tDW to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is the specified tWP. 3. During this period, I/O pins are in the output state, and input signals must not be applied. 4. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high impedance state. CS must be active during the tCW write period. 5. Transition is measured ±200mV from steady state. 6.42 6 IDT 71124 CMOS Static RAM 1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges Ordering Information IDT 71124 Device Type S Power XX Speed X Package X Process/ Temperature Range Blank Commercial (0°C to +70°C) I Industrial (–40°C to +85°C) Y 400-mil SOJ (SO32-3) 12 15 20 Speed in nanoseconds 3514 drw 09 6.42 7 IDT71124 CMOS Static RAM 1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges Datasheet Document History 8/5/99 Pg. 3 Pg. 4 Pg. 6 Pg. 8 Pg. 1, 3, 4, 7 Pg. 3 Pg. 3 Pg.4 Updated to new format Removed military entries on DC table Removed Note 1 and renumbered footnotes Revised footnotes on Write Cycle No. 1 diagram Added Datasheet Document History Added 12ns, 15ns, and 20ns industrial temperature speed grade offerings Revise ISB for Industrial Temperature offerings to meet commerical specifications Revised ISB to accomidate speed functionality Tightened tAW, tCW, tWP and tDW within the AC Electrical Characteristics Not recommended for new designs Removed "Not recommended for new designs" 8/13/99 9/30/99 2/18/00 3/14/00 4/01/00 8/09/00 02/01/01 CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com for Tech Support: sramhelp@idt.com 800-544-7726, x4033 The IDT logo is a registered trademark of Integrated Device Technology, Inc. 6.42 8