IDT7132LA100C

HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. IDT7132SA/LA IDT7142SA/LA FEATURES: • High-speed access — Military: 25/35/55/100ns (max.) — Commercial: 25/35/55/100ns (max.) — Commercial: 20ns only in PLCC for 7132 • Low-power operation — IDT7132/42SA Active: 550mW (typ.) Standby: 5mW (typ.) — IDT7132/42LA Active: 550mW (typ.) Standby: 1mW (typ.) • Fully asynchronous operation from either port • MASTER IDT7132 easily expands data bus width to 16-ormore bits using SLAVE IDT7142 • On-chip port arbitration logic (IDT7132 only) • BUSY output flag on IDT7132; BUSY input on IDT7142 • Battery backup operation —2V data retention • TTL-compatible, single 5V ± 10% power supply • Available in popular hermetic and plastic packages • Military product compliant to MIL-STD, Class B • Standard Military Drawing # 5962-87002 • Industrial temperature range (–40°C to +85°C) is available, tested to miliary electrical specifications DESCRIPTION: The IDT7132/IDT7142 are high-speed 2K x 8 Dual-Port Static RAMs. The IDT7132 is designed to be used as a standalone 8-bit Dual-Port RAM or as a “MASTER” Dual-Port RAM together with the IDT7142 “SLAVE” Dual-Port in 16-bit-ormore word width systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 16-or-more-bit memory system applications results in full-speed, error-free operation without the need for additional discrete logic. Both devices provide two independent ports with separate control, address, and l/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature, controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT’s CMOS high-performance technology, these devices typically operate on only 550mW of power. Low-power (LA) versions offer battery backup data retention capability, with each Dual-Port typically consuming 200µW from a 2V battery. The IDT7132/7142 devices are packaged in a 48-pin sidebraze or plastic DIPs, 48-pin LCCs, 52-pin PLCCs, and 48-lead flatpacks. Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability. FUNCTIONAL BLOCK DIAGRAM OEL R/ OER R/ CEL WL CER WR I/O0L- I/O7L I/O Control I/O Control I/O0R-I/O7R BUSYL (1,2) BUSYR Address Decoder 11 (1,2) A10L A0L MEMORY ARRAY Address Decoder A10R A0R NOTES: 1. IDT7132 (MASTER): BUSY is open drain output and requires pullup resistor of 270Ω. IDT7142 (SLAVE): BUSY is input. 2. Open drain output: requires pullup resistor of 270Ω. The IDT logo is a registered trademark of Integrated Device Technology, Inc. 11 CEL ARBITRATION LOGIC CER 2692 drw 01 MILITARY AND COMMERCIAL TEMPERATURE RANGES ©1996 Integrated Device Technology, Inc. For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391. OCTOBER 1996 DSC-2692/8 6.02 1 IDT7132SA/LA AND IDT7142SA/LA HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM MILITARY AND COMMERCIAL TEMPERATURE RANGES BUSYR BUSYL PIN CONFIGURATIONS (1,2) WR R/ WL BUSYL R/ CEL A10L A10R WL A10L BUSYR BUSYL WL WR 2692 drw 02 NOTES: 1. All Vcc pins must be connected to the power supply. 2. All GND pins must be connected to the ground supply. 3. This text does not indicate orientation of the actual part-marking. 76 A1L A2L A3L A4L A5L 8 9 10 11 12 13 14 15 16 17 18 19 20 54 32 R/ 1 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 R/ INDEX N/C N/C A10R A10L VCC CER OEL CEL A0L A0L A1L A2L A3L A4L A5L A6L A7L A8L A9L I/O0L I/O1L I/O2L I/O3L I/O4L I/O5L I/O6L I/O7L GND OEL 1 48 2 47 3 46 4 45 5 44 6 43 7 42 8 41 9 IDT7132/ 40 10 7142 39 11 38 12 P48-1 37 & 13 C48-2 36 14 35 15 DIP 34 16 TOP 33 17 VIEW (3) 32 18 31 19 30 20 29 21 28 22 27 23 26 24 25 VCC R/ CER BUSYR A10R A0R A1R A2R A3R A4R A5R A6R A7R A8R A9R I/O7R I/O6R I/O5R I/O4R I/O3R I/O2R I/O1R I/O0R WR 65 A1L A2L A3L A4L A5L A6L A7L A8L A9L I/O0L I/O1L I/O2L 7 8 9 10 11 12 13 14 15 16 43 R/ INDEX 2 1 48 47 46 45 44 43 42 41 40 A0R A1R A2R A3R A4R A5R A6R A7R A8R A9R I/O7R I/O6R OER VCC CEL CER IDT7132/42 L48-1 & F48-1 48-PIN LCC/ FLATPACK TOP VIEW (3) 17 32 18 31 19 20 21 22 23 24 25 26 27 28 29 30 I/O3L I/O4L I/O5L I/O6L I/O7L GND I/O0R I/O1R I/O2R I/O3R I/O4R I/O5R OER 39 38 37 36 35 34 33 2692 drw 03 OEL A0L OER A0R A1R A2R A3R A4R A5R A6R A7R A8R A9R N/C I/O7R 2692 drw 04 ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM (2) Rating Terminal Voltage with Respect to GND Operating Temperature Temperature Under Bias Storage Temperature DC Output Current Commercial -0.5 to +7.0 Military -0.5 to +7.0 Unit V IDT7132/42 J52-1 52-PIN PLCC TOP VIEW (3) A6L A7L A8L A9L TA TBIAS TSTG IOUT 0 to +70 -55 to +125 -55 to +125 50 -55 to +125 -65 to +135 -65 to +150 50 °C °C °C mA I/O0L I/O1L I/O2L I/O3L 21 22 23 24 25 26 27 28 29 30 31 32 33 I/O5L I/O6L I/O7L N/C GND I/O0R I/O1R I/O2R I/O3R I/O4R 2692 tbl 01 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed Vcc + 0.5V for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 0.5V. NOTES: 1. All Vcc pins must be connected to the power supply. 2. All GND pins must be connected to the ground supply. 3. This text does not indicate orientation of the actual part-marking. RECOMMENDED DC OPERATING CONDITIONS Symbol VCC GND VIH VIL Parameter Supply Voltage Supply Voltage Input High Voltage Input Low Voltage Min. Typ. 4.5 5.0 0 0 2.2 -0.5 (1) I/O5R I/O6R I/O4L RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Grade Military Commercial Ambient Temperature -55°C to +125°C 0°C to +70°C GND 0V 0V VCC 5.0V ± 10% 5.0V ± 10% 2692 tbl 02 Max. 5.5 0 6.0(2) 0.8 Unit V V V V 2692 tbl 03 — — NOTES: 1. VIL (min.) = -1.5V for pulse width less than 10ns. 2. VTERM must not exceed Vcc + 0.5V. 6.02 2 IDT7132SA/LA AND IDT7142SA/LA HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM MILITARY AND COMMERCIAL TEMPERATURE RANGES DC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(1,6) (VCC = 5.0V ± 10%) 7132X20(2) 7132X25(3) 7132X35 7132X55 7132X100 7142X25(3) 7142X35 7142X55 7142X100 Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. Unit — — 110 280 — — 110 220 110 250 110 220 110 200 110 170 — — 30 30 — — 65 65 — — 1.0 0.2 — — 60 60 — — 65 45 — — 165 125 — — 15 5 — — 155 115 30 30 30 30 65 65 65 65 1.0 0.2 1.0 0.2 60 60 60 60 80 60 65 45 160 125 150 115 30 10 15 5 155 115 145 105 80 80 80 80 25 25 25 25 50 50 50 50 1.0 0.2 1.0 0.2 45 45 45 45 230 170 165 120 80 60 65 45 150 115 125 90 30 10 15 4 145 105 110 85 65 65 65 65 20 20 20 20 190 140 155 110 65 45 65 35 65 65 65 65 20 20 20 20 40 40 40 40 1.0 0.2 1.0 0.2 40 40 40 40 190 140 155 110 65 45 55 35 125 90 110 75 30 10 15 4 110 80 95 70 mA Symbol ICC Parameter Dynamic Operating Current (Both Ports Active) Standby Current (Both Ports - TTL Level Inputs) Standby Current (One Port - TTL Level Inputs) Full Standby Current (Both Ports - All CMOS Level Inputs Full Standby Current (One Port - All CMOS Level Inputs) Test Conditions Version CEL and CER = VIL, MIL. SA Outputs open, LA f = fMAX(4) COM'L. SA LA CEL and CER = VIH, MIL. SA f = fMAX(4) LA COM'L. SA LA SA LA Active Port Outputs COM'L. SA Open, f = fMAX(4) LA ISB1 mA ISB2 CE"A" = VIL and CE"B" = VIH (7) MIL. 40 125 40 90 40 110 40 75 1.0 0.2 1.0 0.2 30 10 15 4 mA ISB3 CEL and CER > VCC -0.2V, VIN > VCC -0.2V or VIN < 0.2V,f = 0(5) MIL. SA LA COM'L. SA LA MIL. mA ISB4 CE"A" < 0.2V and CE"B" > VCC -0.2V(7) VIN > VCC -0.2V or VIN < 0.2V, Active Port Outputs Open, f = fMAX(4) SA LA COM'L. SA LA 40 110 40 85 40 100 40 70 mA NOTES: 2689 tbl 04 1. 'X' in part numbers indicates power rating (SA or LA). 2. Com'l Only, 0°C to +70°C temperature range. PLCC package only. 3. Not available in DIP packages. 4. At f = fMax, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using “AC TEST CONDITIONS” of input levels of GND to 3V. 5. f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby. 6. Vcc = 5V, TA=+25°C for Typ. and is not production tested. Vcc DC = 100mA (Typ.) 7. Port "A" may be either left or right port. Port "B" is opposite from port "A". DC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE (VCC = 5.0V ± 10%) 7132SA 7142SA Min. Max. — — — — 2.4 10 10 0.4 0.5 — 7132LA 7142LA Max. Max. — — — — 2.4 5 5 0.4 0.5 — Symbol |lLl| |lLO| VOL VOL VOH Parameter Input Leakage Current(1) Output Leakage Current(1) Output Low Voltage (l/O0-l/O7) Open Drain Output Low Voltage (BUSY, INT) Output High Voltage Supply Current Test Conditions VCC = 5.5V, VIN = 0V to VCCIN = GND to VCC VCC = 5.5V, CE = VIH, VOUT = 0V to VCCC lOL = 4mA lOL= 16mA lOL = 16mA lOH = -4mA VIN > VCC -0.2V or < 0.2V Unit µA µA V V V 2689 tbl 05 NOTE: 1. At Vcc < 2.0V leakages are undefined. 6.02 3 IDT7132SA/LA AND IDT7142SA/LA HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM MILITARY AND COMMERCIAL TEMPERATURE RANGES DATA RETENTION CHARACTERISTICS (LA Version Only) Symbol VDR ICCDR (3) Parameter VCC for Data Retention Data Retention Current Test Conditions VCC = 2.0V, CE ≥ VCC -0.2V Mil. lDT7132LA/IDT7142LA Min. Typ. Max. 2.0 — — 0 tRC(2) — 100 100 — — — 4000 1500 — — Unit V µA µA ns ns 2692 tbl 06 VIN ≥ VCC -0.2V or VIN ≤ 0.2V Com’l. tCDR tR(3) Chip Deselect to Data Retention Time Operation Recovery Time NOTES: 1. VCC = 2V, TA = +25°C, and is not production tested. 2. tRC = Read Cycle Time 3. This parameter is guaranteed but not production tested. DATA RETENTION WAVEFORM DATA RETENTION MODE AC TEST CONDITIONS Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND TO 3.0V 5ns 1.5V 1.5V Figures 1, 2, and 3 2692 tbl 07 VCC 4.5V tCDR VDR ≥ 2.0V 4.5V tR CE VDR VIH VIH 2692 drw 05 5V 1250Ω DATA OUT 5V 1250Ω DATA 30pF* 100pF for 55 and 100ns versions OUT 775Ω 775Ω 5pF* 2692 drw 06 Figure 1. AC Output Test Load 5V 270Ω Figure 2. Output Test Load (for tHZ, tLZ, tWZ, and tOW) * Including scope and jig BUSY or INT 30pF* 100pF for 55 and 100ns versions Figure 3. BUSY and INT BUSY INT AC Output Test Load 6.02 4 IDT7132SA/LA AND IDT7142SA/LA HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM MILITARY AND COMMERCIAL TEMPERATURE RANGES AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(3) Symbol Read Cycle tRC tAA tACE tAOE tOH tLZ tHZ tPU tPD Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Output Hold From Address Change Output Low-Z Time(1,4) Output High-Z Time(1,4) Chip Enable to Power Up Time(4) Chip Disable to Power Down Time(4) 20 — — 3 0 — 0 — — 20 20 11 — — 10 — 20 25 — — — 3 0 — 0 — — 25 25 12 — — 10 — 25 35 — — — 3 0 — 0 — — 35 35 20 — — 15 — 35 55 — — — 3 5 — 0 — — 55 55 25 — — 25 — 50 100 — — — 10 5 — 0 — — 100 100 40 — — 40 — 50 ns ns ns ns ns ns ns ns ns Parameter 7132X20(2) 7132X25(5) 7132X35 7132X55 7132X100 7142X55 7142X100 7142X25(5) 7142X35 Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit NOTES: 1. Transition is measured ± 500mV from Low or High-impedance voltage Output Test Load (Figure 2). 2. Com'l Only, 0°C to +70°C temperature range. PLCC package only. 3. “X” in part numbers indicates power rating (SA or LA). 4. This parameter is guaranteed by device characterization, but is not production tested. 5. Not available in DIP packages. 2689 tbl 08 TIMING WAVEFORM OF READ CYCLE NO. 1, EITHER SIDE(1) tRC ADDRESS tAA tOH DATAOUT PREVIOUS DATA VALID DATA VALID tOH BUSYOUT tBDDH (2,3) 2692 drw 07 NOTES: 1. R/W = VIH, CE = VIL, and is OE = VIL. Address is valid prior to the coincidental with CE transition Low. 2. tBDD delay is required only in the case where the opposite port is completing a write operation to the same address location. For simultaneous read operations, BUSY has no relationship to valid output data. 3. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD. 6.02 5 IDT7132SA/LA AND IDT7142SA/LA HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM MILITARY AND COMMERCIAL TEMPERATURE RANGES TIMING WAVEFORM OF READ CYCLE NO. 2, EITHER SIDE (3) tACE CE tAOE (4) tHZ (2) OE tLZ DATAOUT tLZ ICC CURRENT ISS tPU 50% (1) (1) tHZ VALID DATA tPD (4) (2) 50% 2692 drw 08 NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is deaserted first, OE or CE. 3. R/W = VIH, and the address is valid prior to or coincidental with CE transition Low. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD. AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(5) 7132X20(2) 7132X25(6) Symbol Parameter Write Cycle tWC Write Cycle Time(3) tEW Chip Enable to End of Write tAW Address Valid to End of Write tAS Address Set-up Time tWP Write Pulse Width(4) tWR Write Recovery Time tDW Data Valid to End of Write tHZ Output High Z Time(1) tDH Data Hold Time tWZ Write Enabled to Output in High Z(1) tOW Output Active From End of Write(1) Min. 20 15 15 0 15 0 10 — 0 — 0 Max. — — — — — — — 10 — 10 — 7142X25 Min. Max. 25 20 20 0 15 0 12 — 0 — 0 — — — — — — — 10 — 10 — (6) 7132X35 7132X55 7132X100 7142X100 Min. Max. 100 90 90 0 55 0 40 — 0 — 0 — — — — — — — 40 — 40 — Unit ns ns ns ns ns ns ns ns ns ns ns 7142X35 7142X55 Min. Max. Min. Max. 35 30 30 0 25 0 15 — 0 — 0 — — — — — — — 15 — 15 — 55 40 40 0 30 0 20 — 0 — 0 — — — — — — — 25 — 30 — NOTES: 2692 tbl 09 1. Transition is measured ± 500mV from Low or High-impedance voltage with Output Test Load (Figure 2). This parameter is guaranteed by device characterization but is not production tested. 2. 0°C to +70°C temperature range only, PLCC package only. 3. For Master/Slave combination, tWC = tBAA + tWP, since R/W = VIL must occur after tBAA. 4. If OE is low during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be placed on the bus for the required tDW. If OE is High during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP. 5. “X” in part numbers indicates power rating (SA or LA). 6. Not available in DIP packages. CAPACITANCE(1) (TA = +25°C,f = 1.0MHz) Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions(2) Max. Unit VIN = 3dV 11 pF VIN = 3dV 11 pF NOTES: 2692 tbl 10 1. This parameter is determined by device characterization but is not production tested. 2. 3dV represents the interpolated capacitance when the input and output signals switch from 0V to 3V or from 3V to 0V. 6.02 6 IDT7132SA/LA AND IDT7142SA/LA HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM MILITARY AND COMMERCIAL TEMPERATURE RANGES TIMING WAVEFORM OF WRITE CYCLE NO. 1, (R/W CONTROLLED TIMING)(1,5,8) tWC ADDRESS tHZ (7) OE tAW CE tAS(6) R/ tWP(2) tWR (3) tHZ (7) W tWZ (7) tOW (4) (4) DATA OUT tDW DATA IN tDH 2692 drw 09 TIMING WAVEFORM OF WRITE CYCLE NO. 2, (CE CONTROLLED TIMING)(1,5) tWC ADDRESS tAW CE tAS(6) R/ tEW (2) tWR (3) W tDW tDH DATA IN 2692 drw 10 NOTES: 1. R/W or CE must be High during all address transitions. 2. A write occurs during the overlap (tEW or tWP) of CE = VIL and R/W= VIL. 3. tWR is measured from the earlier of CE or R/W going High to the end of the write cycle. 4. During this period, the l/O pins are in the output state and input signals must not be applied. 5. If the CE Low transition occurs simultaneously with or after the R/W Low transition, the outputs remain in the High-impedance state. 6. Timing depends on which enable signal (CE or R/W) is asserted last. 7. This parameter is determined be device characterization, but is not production tested. Transition is measured +/- 500mV from steady state with the Output Test Load (Figure 2). 8. If OE is low during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be placed on the bus for the required tDW. If OE is High during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP. 6.02 7 IDT7132SA/LA AND IDT7142SA/LA HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM MILITARY AND COMMERCIAL TEMPERATURE RANGES AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(7)8M824S258M824S30 7132X20(1) Symbol Parameter Busy Timing (For Master lDT7130 Only) tBAA tBDA tBAC tBDC tWDD tWH tDDD tAPS Min. Max. — — — — — 12 — 5 — 5 0 12 — — 20 20 20 20 50 — 35 — 25 — — — 40 30 7132X25(8) 7132X35 7142X35 7142X25(8) Min. Max. Min. Max. — — — — — 15 — 5 — 5 0 15 — — 20 20 20 20 50 — 35 — 35 — — — 50 35 — — — — — 20 — 5 — 5 0 20 — — 20 20 20 20 60 — 35 — 35 — — — 60 35 7132158M824S4 7132X55 7132X100 7142X55 7142X100 Min. Max. Min. Max. Unit — — — — — 20 — 5 — 5 0 20 — — 30 30 30 30 80 — 55 — 50 — — — 80 55 — — — — — 20 — 5 — 5 0 20 — — 50 50 50 50 120 — 100 — 65 — — 120 100 ns ns ns ns ns ns ns ns ns ns ns ns ns BUSY Access Time from Address BUSY Disable Time from Address BUSY Access Time from Chip Enable BUSY Disable Time from Chip Enable Write Pulse to Data Delay(2) Write Hold After BUSY(6) Write Data Valid to Read Data Delay(2) Arbitration Priority Set-up Time(3) BUSY Disable to Valid Data(4) tBDD Busy Timing (For Slave IDT7140 Only)e Write to BUSY Input(5) tWB Write Hold After BUSY(6) tWH Write Pulse to Data Delay(2) tWDD Write Data Valid to Read Data Delay(2) tDDD NOTES: 2689 tbl 11 1. Com'l Only, 0°C to +70°C temperature range. PLCC package only. 2. Port-to-port delay through RAM cells from the writing port to the reading port, refer to “Timing Waveform of Write with Port -to-Port Read and BUSY." 3. To ensure that the earlier of the two ports wins. 4. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual), or tDDD – tDW (actual). 5. To ensure that a write cycle is inhibited on port 'B' during contention on port 'A'.. 6. To ensure that a write cycle is completed on port 'B' after contention on port 'A'. 7. “X” in part numbers indicates power rating (S or L). 8. Not available in DIP package TIMING WAVEFORM OF WRITE WITH PORT-TO-PORT READ AND BUSY BUSY tWC ADDR’A’ MATCH tWP R/ (1,2,3) W’A’ tDW tDH VALID tAPS (1) DATAIN’A’ ADDR’B’ MATCH t BDA tBDD BUSY’B’ tWDD DATAOUT’B’ tDDD NOTES: 1. To ensure that the earlier of the two ports wins. tAPS is ignored for Slave (IDT7142). 2. CEL = CER = VIL. 3. OE = VIL for the reading port. 4. All timing is the same for the left and right ports. Port 'A' may be either the left or right port. Port 'B' is opposite from port 'A'. 2692 drw 11 VALID 6.02 8 IDT7132SA/LA AND IDT7142SA/LA HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM MILITARY AND COMMERCIAL TEMPERATURE RANGES TIMING WAVEFORM OF WRITE WITH BUSY(3) BUSY tWP R/ W L BUSYR R/ tWB (1) W tWH (2) R 2692 drw 12 NOTES: 1. tWH must be met for both BUSY Input (IDT7142, slave) or Output (IDT7132, master). 2. BUSY is asserted on port 'B' blocking R/W'B', until BUSY'B' goes High. 3. All timing is the same for the left and right ports. Port 'A' may be either the left or right port. Port 'B' is opposite from port 'A'. TIMING WAVEFORM OF BUSY ARBITRATION CONTROLLED BY CE TIMING CE ADDR 'A' (1) and 'B' ADDRESSES MATCH CE'B' tAPS (2) CE'A' tBAC tBDC BUSY'A' 2692 drw 13 TIMING WAVEFORM OF BUSY ARBITRATION CONTROLLED BY ADDRESS MATCH TIMING (1) tRC or tWC ADDR'A' tAPS(2) ADDR'B' tBAA tBDA ADDRESSES MATCH ADDRESSES DO NOT MATCH BUSY'B' 2692 drw 14 NOTES: 1. All timing is the same for left and right ports. Port 'A' may be either left or right port. Port 'B' is the opposite from port 'A'. 2. If tAPS is not satisified, the BUSY will be asserted on one side or the other, but there is no guarantee on which side BUSY will be asserted (7132 only). 6.02 9 IDT7132SA/LA AND IDT7142SA/LA HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM MILITARY AND COMMERCIAL TEMPERATURE RANGES TRUTH TABLES TABLE I — NON-CONTENTION READ/WRITE CONTROL(4) Left or Right Port(1) R/W CE D0–7 OE X H X Z X L H H H L L L X X L H Z DATAIN DATAOUT Z Function Port Disabled and in PowerDown Mode, ISB2 or ISB4 CER = CEL = VIH, Power-Down Mode, ISB1 or ISB3 Data Written Into Memory(2) Data in Memory Output on Port(3) High Impedance Outputs 2654 tbl 12 FUNCTIONAL DESCRIPTION The IDT7132/IDT7142 provides two ports with separate control, address and I/O pins that permit independent access for reads or writes to any location in memory. The IDT7132/ IDT7142 has an automatic power down feature controlled by CE. The CE controls on-chip power down circuitry that permits the respective port to go into a standby mode when not selected (CE = VIL). When a port is enabled, access to the entire memory array is permitted. BUSY LOGIC Busy Logic provides a hardware indication that both ports of the RAM have accessed the same location at the same time. It also allows one of the two accesses to proceed and signals the other side that the RAM is “Busy”. The busy pin can then be used to stall the access until the operation on the other side is completed. If a write operation has been attempted from the side that receives a busy indication, the write signal is gated internally to prevent the write from proceeding. The use of busy logic is not required or desirable for all applications. In some cases it may be useful to logically OR the busy outputs together and use any busy indication as an interrupt source to flag the event of an illegal or illogical operation. If the write inhibit function of busy logic is not desirable, the busy logic can be disabled by placing the part in slave mode with the M/S pin. Once in slave mode the BUSY pin operates solely as a write inhibit input pin. Normal operation can be programmed by tying the BUSY pins High. If desired, unintended write operations can be prevented to a port by tying the busy pin for that port low. The busy outputs on the IDT7132/IDT7142 RAM in master mode, are pull-up type outputs and do not require pull up resistors to operate. If these RAMs are being expanded in depth, then the busy indication for the resulting array requires the use of an external AND gate. NOTES: 1. A0L – A10L ≠ A0R – A10R. 2. If BUSY = L, data is not written. 3. If BUSY = L, data may not be valid, see tWDD and tDDD timing. 4. 'H' = VIH, 'L' = VIL, 'X' = DON’T CARE, 'Z' = High-impedance. TABLE II — ADDRESS BUSY ARBITRATION Inputs Outputs CEL X H X L CER X X H L A0L-A10L A0R-A10R NO MATCH MATCH MATCH MATCH BUSYL(1) BUSYR(1) H H H (2) H H H (2) Function Normal Normal Normal Write Inhibit(3) 2654 tbl 13 NOTES: 1. Pins BUSYL and BUSYR are both outputs for IDT7130 (master). Both are inputs for IDT7140 (slave). BUSYX outputs on the IDT7130 are open drain, not push-pull outputs. On slaves the BUSYX input internally inhibits writes. 2. 'L' if the inputs to the opposite port were stable prior to the address and enable inputs of this port. 'H' if the inputs to the opposite port became stable after the address and enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = Low will result. BUSYL and BUSYR outputs can not be low simultaneously. 3. Writes to the left port are internally ignored when BUSYL outputs are driving Low regardless of actual logic level on the pin. Writes to the right port are internally ignored when BUSYR outputs are driving Low regardless of actual logic level on the pin. 6.02 10 IDT7132SA/LA AND IDT7142SA/LA HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM MILITARY AND COMMERCIAL TEMPERATURE RANGES WIDTH EXPANSION WITH BUSY LOGIC MASTER/SLAVE ARRAYS When expanding an RAM array in width while using busy logic, one master part is used to decide which side of the RAM array will receive a busy indication, and to output that indication. Any number of slaves to be addressed in the same address range as the master, use the busy signal as a write inhibit signal. Thus on the IDT7130/IDT7140 RAM the busy pin is an output if the part is used as a master (M/S pin = VIH), and the busy pin is an input if the part used as a slave (M/S pin = VIL) as shown in Figure 4. LEFT R/ RIGHT R/ If two or more master parts were used when expanding in width, a split decision could result with one master indicating busy on one side of the array and another master indicating busy on one other side of the array. This would inhibit the write operations from one port for part of a word and inhibit the write operations from the other port for the other part of the word. The busy arbitration, on a master, is based on the chip enable and address signals only. It ignores whether an access is a read or write. In a master/slave array, both address and chip enable must be valid long enough for a busy flag to be output from the master before the actual write pulse can be initiated with either the R/ signal or the byte enables. Failure to observe this timing can result in a glitched internal write inhibit signal and corrupted data in the slave. W W R/ IDT7132 MASTER W R/ W W BUSY 270 Ω BUSY +5V BUSY 270 Ω +5V BUSY R/ W BUSY IDT7142 IDT7142 (1) SLAVE SLAVE R/ W 2692 drw 15 BUSY Figure 4. Busy and chip enable routing for both width and depth expansion with IDT7132 (Master) and IDT7142 (Slave) RAMs. ORDERING INFORMATION IDT XXXX A Device Type Power 999 Speed A Package A Process/ Temperature Range Blank B Commercial (0°C to +70°C) Military (–55°C to +125°C) Compliant to MIL-STD-883, Class B 48-pin Plastic DIP (P48-1) 48-pin Sidebraze DIP (C48-2) 52-pin PLCC (J52-1) 48-pin LCC (L48-1) 48-pin Ceramic Flatpack (F48-1) Commercial PLCC Only Speed in nanoseconds P C J L48 F 20 25 35 55 100 LA SA 7132 7142 Low Power Standard Power 16K (2K x 8-Bit) MASTER Dual-Port RAM 16K (2K x 8-Bit) SLAVE Dual-Port RAM 2692 drw 16 6.02 11