IDT71V25761S183PF

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect x x IDT71V25761 IDT71V25781 Features 128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial: – 200MHz 3.1ns clock access time Commercial and Industrial: – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) 3.3V core power supply Power down controlled by ZZ input 2.5V I/O Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array Description The IDT71V25761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V25761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle. The burst mode feature offers the highest level of performance to the system designer, as the IDT71V25761/718 can provide four cycles of data for a single address presented to the SRAM. An internal burst address counter accepts the first cycle address from the processor, initiating the access sequence. The first cycle of output data will be pipelined for one cycle before it is available on the next rising clock edge. If burst mode operation is selected (ADV=LOW), the subsequent three cycles of output data will be available to the user on the next three rising clock edges. The order of these three addresses are defined by the internal burst counter and the LBO input pin. The IDT71V25761/781 SRAMs utilize IDT’s latest high-performance CMOS process and are packaged in a JEDEC standard 14mm x 20mm 100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array (BGA) and 165 fine pitch ball grid array (fBGA). x x x x x x Pin Description Summary A0-A17 CE CS0, C S1 OE GW BWE BW1, BW2, BW3, BW4 CLK ADV ADSC ADSP LBO ZZ I/O0-I/O31, I/OP1-I/OP4 VDD, VDDQ VSS (1) Address Inputs Chip Enable Chip Selects Output Enable Global Write Enable Byte Write Enable Individual Byte Write Selects Clock Burst Address Advance Address Status (Cache Controller) Address Status (Processor) Linear / Interleaved Burst Order Sleep Mode Data Input / Output Core Power, I/O Power Ground Input Input Input Input Input Input Input Input Input Input Input Input Input I/O Supply Supply Synchronous Synchronous Synchronous Asynchronous Synchronous Synchronous Synchronous N/A Synchronous Synchronous Synchronous DC Asynchronous Synchronous N/A N/A 5297 tbl 01 NOTE: 1. BW3 and BW4 are not applicable for the IDT71V25781. OCTOBER 2000 1 ©2000 Integrated Device Technology, Inc. DSC-5297/01 IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges Pin Definitions(1) Symbol A0-A17 ADSC ADSP ADV Pin Function Address Inputs Address Status (Cache Controller) Address Status (Processor) Burst Address Advance Byte Write Enable I/O I I I I Active N/A LOW LOW LOW Description Synchronous Address inputs. The address register is triggered by a combination of the rising edge of CLK and ADSC Low or ADSP Low and C E Low. Synchronous Address Status from Cache Controller. ADSC is an active LOW input that is used to load the address registers with new addresses. Synchronous Address Status from Processor. ADSP is an active LOW input that is used to load the address registers with new addresses. ADSP is gated by C E. Synchronous Address Advance. ADV is an active LOW input that is used to advance the internal burst counter, controlling burst access after the initial address is loaded. When the input is HIGH the burst counter is not incremented; that is, there is no address advance. Synchronous byte write enable gates the byte write inputs BW1-BW4. If BWE is LOW at the rising edge of CLK then BWx inputs are passed to the next stage in the circuit. If BWE is HIGH then the byte write inputs are blocked and only GW can initiate a write cycle. Synchronous byte write enables. BW1 c ontrols I/O0-7, I/OP1, BW2 c ontrols I/O8-15, I/OP2, etc. Any active byte write causes all outputs to be disabled. Synchronous chip enable. C E is used with CS 0 and C S1 to enable the IDT71V25761/781. CE also gates ADSP. This is the clock input. All timing references for the device are made with respect to this input. Synchrono us active HIGH chip select. CS 0 is used with C E and C S1 to enable the chip. Synchronous active LOW chip select. C S1 is used with C E and CS0 to enable the chip. Synchronous global write enable. This input will write all four 9-bit data bytes when LOW on the rising edge of CLK. GW s upersedes individual byte write enables. Synchronous data input/output (I/O) pins. Both the data input path and data output path are registered and triggered by the rising edge of CLK. Asynchronous burst order selection input. When LBO is HIGH, the interleaved burst sequence is selected. When LBO is LOW the Linear burst sequence is selected. LBO is a static input and must not change state while the device is operating. Asynchronous output enable. When OE is LOW the data output drivers are enabled on the I/O pins if the chip is also selected. When OE is HIGH the I/O pins are in a highimpedance state. 3.3V core power supply. 2.5V I/O Supply. Ground. NC pins are not electrically connected to the device. Asynchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down the IDT71V25761/781 to its lowest power consumption level. Data retention is guaranteed in Sleep Mode. 5297 tbl 02 BWE I LOW BW1-BW4 CE CLK CS0 CS1 GW I/O0-I/O31 I/OP1-I/OP4 LBO Individual Byte Write Enables Chip Enable Clock Chip Select 0 Chip Select 1 Global Write Enable Data Input/Output Linear Burst Order I I I I I I I/O I LOW LOW N/A HIGH LOW LOW N/A LOW OE Output Enable I LOW VDD VDDQ VSS NC ZZ Power Supply Power Supply Ground No Connect Sleep Mode N/A N/A N/A N/A I N/A N/A N/A N/A HIGH NOTE: 1. All synchronous inputs must meet specified setup and hold times with respect to CLK. 6.42 2 IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges Functional Block Diagram LBO ADV CEN Burst Sequence INTERNAL ADDRESS CLK ADSC ADSP CLK EN ADDRESS REGISTER Byte 1 Write Register 2 Binary Counter CLR Burst Logic 17/18 A0* A1* Q0 Q1 128K x 36/ 256K x 18BIT MEMORY ARRAY 2 17/18 A0,A1 A0 - A16/17 GW BWE BW1 A2 - A17 36/18 36/18 Byte 1 Write Driver Byte 2 Write Register 9 Byte 2 Write Driver BW2 Byte 3 Write Register 9 Byte 3 Write Driver BW3 Byte 4 Write Register 9 Byte 4 Write Driver BW4 9 OUTPUT REGISTER CE CS0 CS1 D Q Enable Register CLK EN DATA INPUT REGISTER ZZ Powerdown D Q Enable Delay Register OE OUTPUT BUFFER OE I/O0 — I/O31 I/OP1 — I/OP4 36/18 , 5297 drw 01 6.42 3 IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges Absolute Maximum Ratings(1) Symbol VTERM(2) VTERM(3,6) VTERM(4,6) VTERM(5,6) Rating Terminal Voltage with Respect to GND Terminal Voltage with Respect to GND Terminal Voltage with Respect to GND Terminal Voltage with Respect to GND Commercial Operating Temperature Industrial Operating Temperature TBIAS TSTG PT IOUT Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Commercial & Industrial -0.5 to +4.6 -0.5 to VDD -0.5 to VDD +0.5 -0.5 to VDDQ +0.5 -0 to +70 -40 to +85 -55 to +125 -55 to +125 2.0 50 Unit V V V V o Recommended Operating Temperature and Supply Voltage Grade Commercial Industrial Temperature(1) 0°C to +70°C -40°C to +85°C VSS 0V 0V VDD 3.3V±5% 3.3V±5% VDDQ 2.5V±5% 2.5V±5% 5297 tbl 04 NOTES: 1. TA is the "instant on" case temperature. C C C C Recommended DC Operating Conditions Symbol Parameter Core Supply Voltage I/O Supply Voltage Supply Voltage Input High Voltage Inputs Input High Voltage - I/O Input Low Voltage Min. 3.135 2.375 0 1.7 1.7 -0.3(2) Typ. 3.3 2.5 0 ____ TA (7) Max. 3.465 2.625 0 VDD +0.3 VDDQ +0.3(1) 0.7 Unit V V V V V V 5297 tbl 05 o VDD VDDQ o VSS VIH VIH VIL o ____ W mA 5297 tbl 03 ____ NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VDD terminals only. 3. VDDQ terminals only. 4. Input terminals only. 5. I/O terminals only. 6. This is a steady-state DC parameter that applies after the power supplies have ramped up. Power supply sequencing is not necessary; however, the voltage on any input or I/O pin cannot exceed VDDQ during power supply ramp up. 7. TA is the "instant on" case temperature. NOTES: 1. VIH (max) = VDDQ + 1.0V for pulse width less than tCYC/2, once per cycle. 2. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle. 100 pin TQFP Capacitance (TA = +25°C, f = 1.0MHz) Symbol CIN CI/O Parameter (1) 119 BGA Capacitance (TA = +25°C, f = 1.0MHz) Max. 5 7 Unit pF pF 5297 tbl 07 Conditions VIN = 3dV VOUT = 3dV Symbol CIN CI/O Parameter(1) Input Capacitance I/O Capacitance Conditions VIN = 3dV VOUT = 3dV Max. 7 7 Unit pF pF 5297 tbl 07a Input Capacitance I/O Capacitance 165 fBGA Capacitance (TA = +25°C, f = 1.0MHz) Symbol CIN CI/O Parameter(1) Input Capacitance I/O Capacitance Conditions VIN = 3dV VOUT = 3dV Max. TBD TBD Unit pF pF 5297 tbl 07b NOTE: 1. This parameter is guaranteed by device characterization, but not production tested. 6.42 4 IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges Pin Configuration – 128K x 36 A6 A7 CE CS0 BW4 BW3 BW2 BW1 CS1 VDD VSS CLK GW BWE OE ADSC ADSP ADV A8 A9 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 I/OP3 I/O16 I/O17 VDDQ VSS I/O18 I/O19 I/O20 I/O21 VSS VDDQ I/O22 I/O23 VDD/NC(1) VDD NC VSS I/O24 I/O25 VDDQ VSS I/O26 I/O27 I/O28 I/O29 VSS VDDQ I/O30 I/O31 I/OP4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 I/OP2 I/O15 I/O14 VDDQ VSS I/O13 I/O12 I/O11 I/O10 VSS VDDQ I/O9 I/O8 VSS NC VDD ZZ(3) I/O7 I/O6 VDDQ VSS I/O5 I/O4 I/O3 I/O2 VSS VDDQ I/O1 I/O0 I/OP1 5297 drw 02 , LBO A5 A4 A3 A2 A1 A0 100 TQFP Top View NOTES: 1. Pin 14 can either be directly connected to VDD, or connected to an input voltage ≥ VIH, or left unconnected. 2. Pins 38 and 39 can be either NC or connected to VSS. 3. Pin 64 can be left unconnected and the device will always remain in active mode. NC(2) NC(2) VSS VDD NC NC A10 A11 A12 A13 A14 A15 A16 6.42 5 IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges Pin Configuration – 256K x 18 A6 A7 CE CS0 NC NC BW2 BW1 CS1 VDD VSS CLK GW BWE OE ADSC ADSP ADV A8 A9 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 NC NC NC VDDQ VSS NC NC I/O8 I/O9 VSS VDDQ I/O10 I/O11 VDD/NC(1) VDD NC VSS I/O12 I/O13 VDDQ VSS I/O14 I/O15 I/OP2 NC VSS VDDQ NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 A10 NC NC VDDQ VSS NC I/OP1 I/O7 I/O6 VSS VDDQ I/O5 I/O4 VSS NC VDD ZZ(3) I/O3 I/O2 VDDQ VSS I/O1 I/O0 NC NC VSS VDDQ NC NC NC 5297 drw 03 , NOTES: 1. Pin 14 can either be directly connected to VDD, or connected to an input voltage ≥ VIH, or left unconnected. 2. Pins 38 and 39 can be either NC or connected to VSS. 3. Pin 64 can be left unconnected and the device will always remain in active mode. LBO A5 A4 A3 A2 A1 A0 NC(2) NC(2) VSS VDD NC NC A11 A12 A13 A14 A15 A16 A17 100 TQFP Top View 6.42 6 IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges Pin Configuration – 128K x 36, 119 BGA 1 A B C D E F G H J K L M N P R T U VDDQ NC NC I/O16 I/O17 VDDQ I/O20 I/O22 VDDQ I/O24 I/O25 VDDQ I/O29 I/O31 NC NC V DDQ 2 A6 CS0 A7 I/OP3 I/O18 I/O19 I/O21 I/O23 VDD I/O26 I/O27 I/O28 I/O30 I/OP4 A5 NC DNU(4) 3 A4 A3 A2 VSS VSS VSS BW3 VSS NC VSS BW4 VSS VSS VSS LBO A10 DNU(4) 4 ADSP ADSC VDD NC CE OE ADV GW VDD CLK NC(2) BWE A1 A0 VDD A11 DNU(2,4) 5 A8 A9 A12 VSS VSS VSS BW 2 VSS NC VSS BW1 VSS VSS VSS VDD / NC(1) A14 DNU(4) 6 A16 CS1 A15 I/OP2 I/O13 I/O12 I/O11 I/O9 VDD I/O6 I/O4 I/O3 I/O2 I/O0 A13 NC DNU(4) 7 VDDQ NC NC I/O15 I/O14 VDDQ I/O10 I/O8 VDDQ I/O7 I/O5 VDDQ I/O1 I/OP1 NC ZZ(3) VDDQ 5297 drw 04 , Top View Pin Configuration – 256K x 18, 119 BGA 1 A B C D E F G H J K L M N P R T U VDDQ NC NC I/O8 NC VDDQ NC I/O11 VDDQ NC I/O13 VDDQ I/O15 NC NC NC VDDQ 2 A6 CS0 A7 NC I/O9 NC I/O10 NC VDD I/O12 NC I/O14 NC I/OP2 A5 A10 DNU(4) 3 A4 A3 A2 VSS VSS VSS BW2 VSS NC VSS VSS VSS VSS VSS LBO A15 DNU(4) 4 ADSP ADSC VDD NC CE OE ADV GW VDD CLK NC(2) BWE A1 A0 VDD NC DNU(2,4) 5 A8 A9 A13 VSS VSS VSS VSS VSS NC VSS BW1 VSS VSS VSS VDD / NC(1) A14 DNU(4) 6 A16 CS1 A17 I/O7 NC I/O5 NC I/O3 VDD NC I/O1 NC I/O0 NC A12 A11 DNU(4) 7 VDDQ NC NC NC I/O6 VDDQ I/O4 NC VDDQ I/O2 NC VDDQ NC I/OP1 NC ZZ(3) VDDQ 5297 drw 05 NOTES: 1. R5 can either be directly connected to VDD, or connected to an input voltage ≥ VIH, or left unconnected. 2. L4 and U4 can be either NC or connected to VSS. 3. T7 can be left unconnected and the device will always remain in active mode. 4. DNU = Do not use; Pins U2, U3, U4, U5 and U6 are reserved for respective JTAG Pins: TMS, TDI, TCK, TDO and TRST. Within the current version, these pins are left unconnected. Top View , 6.42 7 IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges Pin Configuration – 128K x 36, 165 fBGA 1 A B C D E F G H J K L M N P R NC(4) NC I/OP3 I/O17 I/O19 I/O21 I/O23 V DD(1) I/O25 I/O27 I/O29 I/O31 I/OP4 NC LBO 2 A7 A6 NC I/O16 I/O18 I/O20 I/O22 NC(2) I/O24 I/O26 I/O28 I/O30 NC NC(4) NC(4) 3 CE1 CS 0 V DDQ V DDQ V DDQ V DDQ V DDQ NC V DDQ V DDQ V DDQ V DDQ V DDQ A5 A4 4 BW3 BW4 VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS A2 A3 5 BW2 BW1 VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS DNU (5) 6 CS1 CLK VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC (4) 7 BWE GW VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC (2) 8 ADSC OE VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS A10 A11 9 ADV ADSP VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A 13 A 12 10 A8 A9 NC I/O15 I/O13 I/O11 I/O9 NC I/O7 I/O5 I/O3 I/O1 NC A14 A15 11 NC NC(4) I/OP2 I/O14 I/O12 I/O10 I/O8 ZZ(3) I/O6 I/O4 I/O2 I/O0 I/OP1 NC(4) A16 5297 tbl 17 DNU(5) DNU(5) A1 A0 DNU(5) DNU(5) Pin Configuration – 256K x 18, 165 fBGA 1 A B C D E F G H J K L M N P R NC(4) NC NC NC NC NC NC VDD(1) I/O12 I/O13 I/O14 I/O15 I/OP2 NC LBO 2 A7 A6 NC I/O8 I/O9 I/O10 I/O11 NC(2) NC NC NC NC NC NC (4) 3 CE1 CS0 VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A5 A4 4 BW2 NC VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS A2 A3 5 NC BW1 VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS DNU(5) DNU (5) 6 CS1 CLK VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC(4) A1 A0 7 BWE GW VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC(2) DNU (5) 8 ADSC OE VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS A11 A12 9 ADV ADSP VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A14 A13 10 A8 A9 NC NC NC NC NC NC I/O3 I/O2 I/O1 I/O0 NC A15 A16 11 A10 NC(4) I/OP1 I/O7 I/O6 I/O5 I/O4 ZZ(3) NC NC NC NC NC NC(4) A17 5297 tbl 17a NC(4) DNU(5) DNU(5) NOTES: 1. H1 can either be directly connected to VDD, or connected to an input voltage ≥ VIH, or left unconnected. 2. H2 and N7 can be either NC or connected to VSS. 3. H11 can be left unconnected and the device will always remain in active mode. 4. Pins P11, N6, B11, A1, R2 and P2 are reserved for 9M, 18M, 36M, 72M, 144M and 288M respectively. 5. DNU = Do not use; Pins P5, P7, R5, R7 and N5 are reserved for respective JTAG Pins: TDI, TDO, TMS, TCK and TRST on future revisions. Within this current version, these pins are not connected. 6.42 8 IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 3.3V ± 5%) Symbol |ILI| |ILZZ| |ILO| VOL VOH Input Leakage Current ZZ and LBO Input Leakage Current Output Leakage Current Output Low Voltage Output High Voltage (1) Parameter Test Conditions VDD = Max., VIN = 0V to VDD VDD = Max., VIN = 0V to VDD VOUT = 0V to VDDQ, Device Deselected IOL = +6mA, VDD = Min. IOH = -6mA, VDD = Min. Min. ___ Max. 5 30 5 0.4 ___ Unit µA µA µA V V 5297 tbl 08 ___ ___ ___ 2.0 NOTE: 1. The LBO pin will be internally pulled to VDD if it is not actively driven in the application and the ZZ pin will be internally pulled to V SS if not actively driven. DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1) 200MHz Symbol IDD ISB1 ISB2 IZZ Parameter Operating Power Supply Current CMOS Standby Power Supply Current Clock Running Power Supply Current Full Sleep Mode Supply Current Test Conditions Device Selected, Outputs Open, VDD = Max., VDDQ = Max., VIN > VIH o r < VIL, f = fMAX(2) Device Deselected, Outputs Open, VDD = Max., VDDQ = Max., VIN > VHD o r < VLD, f = 0(2,3) Device Deselected, Outputs Open, VDD = Max., VDDQ = Max., VIN > VHD o r < VLD, f = fMAX(2,3) ZZ > VHD, VDD = Max. Com'l Only 360 30 130 30 183MHz Com'l 340 30 120 30 Ind 350 35 130 35 166MHz Com'l 320 30 110 30 Ind 330 35 120 35 Unit mA mA mA mA 5297 tbl 09 NOTES: 1. All values are maximum guaranteed values. 2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/tCYC while ADSC = LOW; f=0 means no input lines are changing. 3. For I/Os VHD = VDDQ - 0.2V, VLD = 0.2V. For other inputs VHD = VDD - 0.2V, VLD = 0.2V. AC Test Conditions (VDDQ = 2.5V) Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Timing Reference Levels AC Test Load 0 to 2.5V 2ns (VDDQ/2) (VDDQ/2) See Figure 1 5297 tbl 10 AC Test Load I/O Z0 = 50Ω VDDQ/2 50Ω 5297 drw 06 , Figure 1. AC Test Load 6 5 4 ∆tCD 3 (Typical, ns) 2 1 20 30 50 80 100 Capacitance (pF) 200 5297 drw 07 , Figure 2. Lumped Capacitive Load, Typical Derating 6.42 9 IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges Synchronous Truth Table(1,3) Operation Deselected Cycle, Power Down Deselected Cycle, Power Down Deselected Cycle, Power Down Deselected Cycle, Power Down Deselected Cycle, Power Down Read Cycle, Begin Burst Read Cycle, Begin Burst Read Cycle, Begin Burst Read Cycle, Begin Burst Read Cycle, Begin Burst Write Cycle, Begin Burst Write Cycle, Begin Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Write Cycle, Continue Burst Write Cycle, Continue Burst Write Cycle, Continue Burst Write Cycle, Continue Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Write Cycle, Suspend Burst Write Cycle, Suspend Burst Write Cycle, Suspend Burst Write Cycle, Suspend Burst NOTES: 1. L = VIL, H = VIH, X = Don’t Care. 2. OE is an asynchronous input. 3. ZZ = low for this table. Address Used None None None None None External External External External External External External Next Next Next Next Next Next Next Next Next Next Next Next Current Current Current Current Current Current Current Current Current Current Current Current CE H L L L L L L L L L L L X X X X H H H H X X H H X X X X H H H H X X H H CS 0 X X L X L H H H H H H H X X X X X X X X X X X X X X X X X X X X X X X X CS 1 X H X H X L L L L L L L X X X X X X X X X X X X X X X X X X X X X X X X ADSP X L L X X L L H H H H H H H H H X X X X H H X X H H H H X X X X H H X X ADSC L X X L L X X L L L L L H H H H H H H H H H H H H H H H H H H H H H H H ADV X X X X X X X X X X X X L L L L L L L L L L L L H H H H H H H H H H H H GW X X X X X X X H H H H L H H H H H H H H H L H L H H H H H H H H H L H L BWE X X X X X X X H L L L X H H X X H H X X L X L X H H X X H H X X L X L X BWx X X X X X X X X H H L X X X H H X X H H L X L X X X H H X X H H L X L X OE (2) X X X X X L H L L H X X L H L H L H L H X X X X L H L H L H L H X X X X CLK - I/O HI-Z HI-Z HI-Z HI-Z HI-Z DOUT HI-Z DOUT DOUT HI-Z DIN DIN DOUT HI-Z DOUT HI-Z DOUT HI-Z DOUT HI-Z DIN DIN DIN DIN DOUT HI-Z DOUT HI-Z DOUT HI-Z DOUT HI-Z DIN DIN DIN DIN 5297 tbl 11 6.42 10 IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges Synchronous Write Function Truth Table(1, 2) Operation Read Read Write all Bytes Write all Bytes Write Byte 1 (3) (3) GW H H L H H H H H BWE H L X L L L L L BW1 X H X L L H H H BW2 X H X L H L H H BW3 X H X L H H L H BW4 X H X L H H H L 5297 tbl 12 Write Byte 2 Write Byte 3(3) Write Byte 4 (3) NOTES: 1. L = VIL, H = VIH, X = Don’t Care. 2. BW3 and BW4 are not applicable for the IDT71V2578. 3. Multiple bytes may be selected during the same cycle. Asynchronous Truth Table(1) Operation(2) Read Read Write Deselected Sleep Mode OE L H X X X ZZ L L L L H I/O Status Data Out High-Z High-Z – Data In High-Z High-Z Power Active Active Active Standby Sleep 5297 tbl 13 NOTES: 1. L = VIL, H = VIH, X = Don’t Care. 2. Synchronous function pins must be biased appropriately to satisfy operation requirements. Interleaved Burst Sequence Table (LBO=VDD) Sequence 1 A1 First Address Second Address Third Address Fourth Address (1) 0 0 1 1 A0 0 1 0 1 Sequence 2 A1 0 0 1 1 A0 1 0 1 0 Sequence 3 A1 1 1 0 0 A0 0 1 0 1 Sequence 4 A1 1 1 0 0 A0 1 0 1 0 5297 tbl 14 NOTE: 1. Upon completion of the Burst sequence the counter wraps around to its initial state. Linear Burst Sequence Table (LBO=VSS) Sequence 1 A1 First Address Second Address Third Address Fourth Address (1) 0 0 1 1 A0 0 1 0 1 Sequence 2 A1 0 1 1 0 A0 1 0 1 0 Sequence 3 A1 1 1 0 0 A0 0 1 0 1 Sequence 4 A1 1 0 0 1 A0 1 0 1 0 5297 tbl 15 NOTE: 1. Upon completion of the Burst sequence the counter wraps around to its initial state. 6.42 11 IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges AC Electrical Characteristics (VDD = 3.3V ±5%, Commercial and Industrial Temperature Ranges) 200MHz(5) Symbol Parameter Min. Max. 183MHz Min. Max. Min. 166MHz Max. Unit tCYC tCH (1) Clock Cycle Time Clock High Pulse Width Clock Low Pulse Width 5 2 2 ____ 5.5 2.2 2.2 ____ 6 2.4 2.4 ____ ns ns ns ____ ____ ____ tCL(1) ____ ____ ____ Output Parameters tCD tCDC tCLZ (2) Clock High to Valid Data Clock High to Data Change Clock High to Output Active Clock High to Data High-Z Output Enable Access Time (2) ____ 3.1 ____ ____ 3.3 ____ ____ 3.5 ____ ns ns ns ns ns ns ns 1.0 0 1.5 ____ 1.0 0 1.5 ____ 1.0 0 1.5 ____ ____ ____ ____ tCHZ(2) tOE tOLZ 3.1 3.1 ____ 3.3 3.3 ____ 3.5 3.5 ____ Output Enable Low to Output Active Output Enable High to Output High-Z 0 ____ 0 ____ 0 ____ tOHZ(2) 3.1 3.3 3.5 Set Up Times tSA tSS tSD tSW tSAV tSC Address Setup Time Address Status Setup Time Data In Setup Time Write Setup Time Address Advance Setup Time Chip Enable/Select Setup Time 1.2 1.2 1.2 1.2 1.2 1.2 ____ 1.5 1.5 1.5 1.5 1.5 1.5 ____ 1.5 1.5 1.5 1.5 1.5 1.5 ____ ns ns ns ns ns ns ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ Hold Times tHA tHS tHD tHW tHAV tHC Address Hold Time Address Status Hold Time Data In Hold Time Write Hold Time Address Advance Hold Time Chip Enable/Select Hold Time 0.4 0.4 0.4 0.4 0.4 0.4 ____ 0.5 0.5 0.5 0.5 0.5 0.5 ____ 0.5 0.5 0.5 0.5 0.5 0.5 ____ ns ns ns ns ns ns ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ Sleep Mode and Configuration Parameters tZZPW tZZR(3) tCFG (4) ZZ Pulse Width ZZ Recovery Time Configuration Set-up Time 100 100 20 ____ 100 100 22 ____ 100 100 24 ____ ns ns ns 4876 tbl 16 ____ ____ ____ ____ ____ ____ NOTES: 1. Measured as HIGH above VIH and LOW below VIL. 2. Transition is measured ±200mV from steady-state. 3. Device must be deselected when powered-up from sleep mode. 4. tCFG is the minimum time required to configure the device based on the LBO input. LBO is a static input and must not change during normal operation. 5. Commercial temperature range only. 6.42 12 tCYC CLK tCH tCL tSS tHS ADSP (1) ADSC tHA Ax tSW tHW Ay tSA ADDRESS GW,BWE, BWx tHC tSAV tHAV tSC CE, CS1 (Note 3) ADV tOE tCD tOHZ tCDC O1(Ay) O2(Ay) O3(Ay) ADV HIGH suspends burst Timing Waveform of Pipeline Read Cycle(1,2) IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges 6.42 13 tOLZ tCLZ O1(Ax) OE (Burst wraps around to its initial state) tCHZ O4(Ay) O1(Ay) O2(Ay) DATAOUT Output Disabled Pipelined Read Burst Pipelined Read 5297 drw 08 NOTES: 1. O1 (Ax) represents the first output from the external address Ax. O1 (Ay) represents the first output from the external address Ay; O2 (Ay) represents the next output data in the burst sequence of the base address Ay, etc. where A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input. 2. ZZ input is LOW and LBO is Don't Care for this cycle. 3. CS0 timing transitions are identical but inverted to the CE and CS1 signals. For example, when CE and CS1 are LOW on this waveform, CS0 is HIGH. , tCYC CLK tCH tCL (2) tSS tHS ADSP tSA tHA Ax Ay tSW tHW Az ADDRESS GW ADV Timing Waveform of Combined Pipelined Read and Write Cycles(1,2,3) IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges 6.42 14 OE tSD tHD tOE tCD tCLZ O1(Ax) tOHZ I1(Ay) tOLZ tCDC O1(Az) tCD O2(Az) O3(Az) DATAIN DATAOUT Single Read Pipelined Write Pipelined Burst Read 5297 drw 09 , NOTES: 1. Device is selected through entire cycle; CE and CS1 are LOW, CS0 is HIGH. 2. ZZ input is LOW and LBO is Don't Care for this cycle. 3. O1 (Ax) represents the first output from the external address Ax. I1 (Ay) represents the first input from the external address Ay; O1 (Az) represents the first output from the external address Az; O2 (Az) represents the next output data in the burst sequence of the base address Az, etc. where A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input. tCYC CLK tCH tCL tSS tHS ADSP ADSC tSA tHA Ax GW is ignored when ADSP initiates a cycle and is sampled on the next clock rising edge ADDRESS Ay Az tHW tSW GW tSC tHC CE, CS1 tSAV tHAV (Note 3) ADV (ADV HIGH suspends burst) Timing Waveform of Write Cycle No. 1 — GW Controlled(1,2,3) IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges 6.42 15 I1(Ax) I2(Ay) tOHZ I1(Ay) I2(Ay) Burst Write Single Write OE tSD I3(Ay) I4(Ay) I1(Az) tHD DATAIN I2(Az) I3(Az) DATAOUT O3(Aw) O4(Aw) Burst Read Burst Write 5297 drw 10 , NOTES: 1. ZZ input is LOW, BWE is HIGH and LBO is Don't Care for this cycle. 2. O4 (Aw) represents the final output data in the burst sequence of the base address Aw. I1 (Ax) represents the first input from the external address Ax. I1 (Ay) represents the first input from the external address Ay; I2 (Ay) represents the next input data in the burst sequence of the base address Ay, etc. where A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input. In the case of input I2 (Ay) this data is valid for two cycles because ADV is high and has suspended the burst. 3. CS0 timing transitions are identical but inverted to the CE and CS1 signals. For example, when CE and CS1 are LOW on this waveform, CS0 is HIGH. . tCYC CLK tCH tCL tSS tHS ADSP ADSC tSA tHA Ax BWE is ignored when ADSP initiates a cycle and is sampled on next clock rising edge ADDRESS Ay Az tHW tSW BWE BWx is ignored when ADSP initiates a cycle and is sampled on next clock rising edge tHW tSW BWx tSC tHC CE, CS1 tSAV (Note 3) Timing Waveform of Write Cycle No. 2 — Byte Controlled(1,2,3) IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges 6.42 16 (ADV suspends burst) ADV OE tSD I1(Ax) tOHZ O4(Aw) Single Write Burst Write Extended Burst Write 5297 drw 11 tHD DATAIN I1(Ay) I2(Ay) I2(Ay) I3(Ay) I4(Ay) I1(Az) I2(Az) I3(Az) DATAOUT O3(Aw) Burst Read , NOTES: 1. ZZ input is LOW, GW is HIGH and LBO is Don't Care for this cycle. 2. O4 (Aw) represents the final output data in the burst sequence of the base address Aw. I1 (Ax) represents the first input from the external address Ax. I1 (Ay) represents the first input from the external address Ay; I2 (Ay) represent the next input data in the burst sequence of the base address Ay, etc. where A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input. In the case of input I2 (Ay) this data is valid for two cycles because ADV is high and has suspended the burst. 3. CS0 timing transitions are identical but inverted to the CE and CS1 signals. For example, when CE and CS1 are LOW on this waveform, CS0 is HIGH. tCYC CLK tCH tCL tSS tHS ADSP ADSC tHA Az tSA ADDRESS Ax GW tHC tSC CE, CS1 (Note 4) Timing Waveform of Sleep (ZZ) and Power-Down Modes(1,2,3) IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges 6.42 17 tOE tOLZ O1(Ax) tZZPW ADV OE DATAOUT tZZR ZZ Single Read Snooze Mode 5297 drw 12 , NOTES: 1. Device must power up in deselected Mode. 2. LBO is Don't Care for this cycle. 3. It is not necessary to retain the state of the input registers throughout the Power-down cycle. 4. CS0 timing transitions are identical but inverted to the CE and CS1 signals. For example, when CE and CS1 are LOW on this waveform, CS0 is HIGH. IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges Non-Burst Read Cycle Timing Waveform CLK ADSP ADSC ADDRESS Av Aw Ax Ay Az GW, BWE, BWx CE, CS1 CS0 OE DATAOUT (Av) (Aw) (Ax) (Ay) 5297 drw 14 , NOTES: 1. ZZ input is LOW, ADV is HIGH and LBO is Don't Care for this cycle. 2. (Ax) represents the data for address Ax, etc. 3. For read cycles, ADSP and ADSC function identically and are therefore interchangable. Non-Burst Write Cycle Timing Waveform CLK ADSP ADSC ADDRESS Av Aw Ax Ay Az GW CE, CS1 CS0 DATAIN (Av) (Aw) (Ax) (Ay) (Az) , 5297 drw 15 NOTES: 1. ZZ input is LOW, ADV and OE are HIGH, and LBO is Don't Care for this cycle. 2. (Ax) represents the data for address Ax, etc. 3. Although only GW writes are shown, the functionality of BWE and BWx together is the same as GW. 4. For write cycles, ADSP and ADSC have different limitations. 6.42 18 IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges 100-Pin Plastic Thin Quad Flatpack(TQFP) Package Diagram Outline 6.42 19 IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges 119 Ball Grid Array (BGA) Package Diagram Outline 6.42 20 IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges 165 Fine Pitch Ball Grid Array (fBGA) Package Diagram Outline 6.42 21 IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges Ordering Information IDT XXX Device Type S Power X Speed XX Package X Process/ Temperature Range Blank I PF BG BQ 200* 183 166 71V25761 71V25781 Commercial (0°C to +70°C) Industrial (-40°C to +85°C) 100-pin Plastic Thin Quad Flatpack (TQFP) 119 Ball Grid Array (BGA) 165 Fine Pitch Ball Grid Array (fBGA) Frequency in Megahertz 128K x 36 Pipelined Burst Synchronous SRAM with 2.5V I/O 256K x 18 Pipelined Burst Synchronous SRAM with 2.5V I/O , *Commercial temperature range only. 5297 drw 13 6.42 22 IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges Datasheet Document History 12/31/99 04/04/00 Pg. 1, 4, 8, 19 Pg. 18 Pg. 4 Created new datasheet from 71V2576 and 71V2578 datasheets Added Industrial Temperature range offerings Added 100pin TQFP Package Diagram Outline Add capacitance table for BGA package; Add Industrial temperature to table; Insert note to Absolute Max Ratings and Recommended Operating Temprature tables Add new package offering, 13 x 15mm 165 fBGA Correct BG119 Package Diagram Outline Add note reference to BG119 pinout Add DNU note to BQ165 pinout Update BG119 Package Diagram Outline Dimensions Remove Preliminary from datasheet Add reference note to pin N5 in BQ165 pinout, reserved for JTAG, TRST 06/01/00 07/15/00 Pg. 20 Pg. 7 Pg. 8 Pg. 20 Pg. 8 10/25/00 CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com for Tech Support: sramhelp@idt.com 800-544-7726, x4033 The IDT logo is a registered trademark of Integrated Device Technology, Inc. 6.42 23