IDT71V428YS15YYYGI

3.3V CMOS Static RAM 4 Meg (1M x 4-Bit) IDT71V428S IDT71V428L Features ◆ ◆ ◆ Description The IDT71V428 is a 4,194,304-bit high-speed Static RAM organized as 1M x 4. It is fabricated using IDT’s high-perfomance, highreliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a costeffective solution for high-speed memory needs. The IDT71V428 has an output enable pin which operates as fast as 5ns, with address access times as fast as 10ns. All bidirectional inputs and outputs of the IDT71V428 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. The IDT71V428 is packaged in a 32-pin, 400 mil Plastic SOJ. ◆ ◆ ◆ ◆ ◆ 1M x 4 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times — Commercial and Industrial: 10/12/15ns Single 3.3V power supply One Chip Select plus one Output Enable pin Bidirectional data inputs and outputs directly LVTTL-compatible Low power consumption via chip deselect Available in 32-pin, 400 mil plastic SOJ package. Functional Block Diagram A0 • • • A19 ADDRESS DECODER • • • 4,194,304-BIT MEMORY ARRAY I/O0 – I/O3 • 4 4 I/O CONTROL 4 WE OE CS CONTROL LOGIC 3623 drw 01 SEPTEMBER 2004 1 ©2004 Integrated Device Technology, Inc. DSC-3623/06 IDT71V428S, IDT71V428L, 3.3V CMOS Static RAM 4 Meg (1M x 4-Bit) Commercial and Industrial Temperature Ranges Pin Configuration A0 A1 A2 A3 A4 CS I/O 0 VDD VSS I/O 1 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A19 A18 A17 A16 A15 OE I/O 3 VSS VDD I/O 2 A14 A13 A12 A11 A10 NC Pin Description A0 – A19 CS WE OE I/O 0 - I/O 3 VDD VSS Address Inputs Chip Select Write Enable Output Enable Data Input/Output 3.3V Power Ground Input Input Input Input I/O Power Gnd 3623 tbl 02 SO32-3 Capacitance (TA = +25°C, f = 1.0MHz, SOJ package) Symbol CIN CI/O Parameter(1) Input Capacitance I/O Capacitance Conditions VIN = 3dV VOUT = 3dV Max. 7 8 Unit pF pF 3623 tbl 03 SOJ Top View 3623 drw 02 NOTE: 1. This parameter is guaranteed by device characterization, but not production tested. Truth Table(1,2) CS L L L H VHC(3) OE L X H X X WE H L H X X I/O DATAOUT DATAIN High-Z High-Z High-Z Function Read Data Write Data Output Disabled Deselected - Standby (ISB) Deselected - Standby (ISB1) 3623 tbl 01 NOTES: 1. H = VIH, L = VIL, x = Don't care. 2. VLC = 0.2V, VHC = V CC -0.2V. 3. Other inputs ≥VHC or ≤VLC. 6.42 2 IDT71V428S, IDT71V428L, 3.3V CMOS Static RAM 4 Meg (1M x 4-Bit) Commercial and Industrial Temperature Ranges Absolute Maximum Ratings(1) Symbol VDD VIN, VOUT TBIAS TSTG PT IOUT Rating Supply Voltage Relative to VSS Terminal Voltage Relative to VSS Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value -0.5 to +4.6 -0.5 to VDD+0.5 -55 to +125 -55 to +125 1 50 Unit V V o Recommended Operating Temperature and Supply Voltage Grade Commercial Industrial Temperature 0°C to +70°C –40°C to +85°C VSS 0V 0V VDD See Below See Below 3623 tbl 05 C C o W mA 3623 tbl 04 Recommended DC Operating Conditions Symbol VDD VSS VIH VIL Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min. 3.0 0 2.0 -0.3 (2) Typ. 3.3 0 ____ ____ Max. 3.6 0 VDD+0.3 0.8 (1) Unit V V V V 3623 tbl 06 NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. NOTES: 1. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle. 2. VIL (min.) = –2V for pulse width less than 5ns, once per cycle. DC Electrical Characteristics (VDD = Min. to Max., Commercial and Industrial Temperature Ranges) IDT71V428 Symbol |ILI| |ILO| VOL VOH Parameter Input Leakage Current Output Leakage Current Output Low Voltage Output High Voltage Test Condition VDD = M ax., VIN = VSS to VDD VDD = M ax., CS = VIH, VOUT = VSS to VDD IOL = 8mA, V DD = M in. IOH = -4mA, V DD = M in. Min. ___ ___ ___ Max. 5 5 0.4 ___ Unit µA µA V V 3623 tbl 07 2.4 DC Electrical Characteristics(1,2,3) (VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V) 71V428S/L10 Symbol ICC Parameter Dynam ic Operating Current CS ≤ VLC, Outputs Open, V DD = M ax., f = f MAX(4) Dynamic Standby Power Supply Current CS ≥ VHC, Outputs Open, V DD = M ax., f = f MAX(4) Full Standby Power Supply Current (static) CS ≥ VHC, Outputs Open, V DD = M ax., f = 0(4) S L S L S L Com'l. 150 140 60 40 20 10 Ind.(5) 150 — 60 — 20 — 71V428S/L12 Com'l. 140 130 50 35 20 10 Ind. 140 130 50 35 20 10 71V428S/L15 Com'l. 130 120 40 30 20 10 Ind. 130 120 40 30 20 10 Unit mA mA mA mA mA mA 3623 tbl 08 ISB ISB1 NOTES: 1. All values are maximum guaranteed values. 2. All inputs switch between 0.2V (Low) and VDD - 0.2V (High). 3. Power specifications are preliminary. 4. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing. 5. Standard power 10ns (S10) speed grade only. 6.42 3 IDT71V428S, IDT71V428L, 3.3V CMOS Static RAM 4 Meg (1M x 4-Bit) Commercial and Industrial Temperature Ranges AC Test Conditions Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels AC Test Load GND to 3.0V 1.5ns 1.5V 1.5V See Figure 1, 2 and 3 3623 tbl 09 AC Test Loads 3.3V +1.5V 50Ω I/O Z0 = 50Ω 30pF 3623 drw 03 320Ω DATAOUT 5pF* 350Ω 3623 drw 04 Figure 1. AC Test Load * Including jig and scope capacitance. Figure 2. AC Test Load (for tCLZ, tOLZ, t CHZ, tOHZ, tOW, and tWHZ) 7 • 6 ∆tAA, tACS (Typical, ns) 5 4 3 • • 2 • 1 • • • 8 20 40 60 80 100 120 140 160 180 200 CAPACITANCE (pF) Figure 3. Output Capacitive Derating 3623 drw 05 6.42 4 IDT71V428S, IDT71V428L, 3.3V CMOS Static RAM 4 Meg (1M x 4-Bit) Commercial and Industrial Temperature Ranges AC Electrical Characteristics Symbol READ CYCLE tRC tAA tACS tCLZ (1) (VDD = 3.3V ± 10%, Commercial and Industrial Temperature Ranges) 71V428S/L10(2) 71V428S/L12 Min. Max. 71V428S/L15 Min. Max. Unit Parameter Min. Max. Read Cycle Time Address Access Time Chip Select Access Time Chip Select to Output in Low-Z Chip Deselect to Output in High-Z Output Enable to Output Valid Output Enable to Output in Low-Z Output Disable to Output in High-Z Output Hold from Address Change Chip Select to Power Up Time Chip Deselect to Power Down Time 10 ____ ____ ____ 12 ____ ____ ____ 15 ____ ____ ____ ns ns ns ns ns ns ns ns ns ns ns 10 10 ____ 12 12 ____ 15 15 ____ 4 ____ 4 ____ 4 ____ tCHZ(1) tOE tOLZ (1) tOHZ (1) tOH tPU(1) tPD(1) WRITE CYCLE tWC tAW tCW tAS tWP tWR tDW tDH tOW(1) tWHZ (1) 5 5 ____ 6 6 ____ 7 7 ____ ____ ____ ____ 0 ____ 0 ____ 0 ____ 5 ____ 6 ____ 7 ____ 4 0 ____ 4 0 ____ 4 0 ____ ____ ____ ____ 10 12 15 Write Cycle Time Address Valid to End of Write Chip Select to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data Valid to End of Write Data Hold Time Output Active from End of Write Write Enable to Output in High-Z 10 8 8 0 8 0 6 0 3 ____ ____ ____ ____ ____ ____ ____ ____ ____ 12 8 8 0 8 0 6 0 3 ____ ____ ____ ____ ____ ____ ____ ____ ____ 15 10 10 0 10 0 7 0 3 ____ ____ ____ ____ ____ ____ ____ ____ ____ ns ns ns ns ns ns ns ns ns ns 3623 tbl 10 ____ ____ ____ 6 7 7 NOTES: 1. This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested. 2. 0°C to +70°C temperature range only for low power 10ns (L10) speed grade. 6.42 5 IDT71V428S, IDT71V428L, 3.3V CMOS Static RAM 4 Meg (1M x 4-Bit) Commercial and Industrial Temperature Ranges (1) Timing Waveform of Read Cycle No. 1 tRC ADDRESS tAA OE tOE CS tOLZ (5) (5) (3) tACS tCLZ DATAOUT tCHZ (5) tOHZ (5) HIGH IMPEDANCE DATAOUT VALID tPD VDD SUPPLY ICC CURRENT ISB tPU 3623 drw 06 Timing Waveform of Read Cycle No. 2(1,2,4) tRC ADDRESS tAA tOH DATAOUT PREVIOUS DATAOUT VALID tOH DATAOUT VALID 3623 drw 07 NOTES: 1. WE is HIGH for Read Cycle. 2. Device is continuously selected, CS is LOW. 3. Address must be valid prior to or coincident with the later of CS transition LOW; otherwise tAA is the limiting parameter. 4. OE is LOW. 5. Transition is measured ±200mV from steady state. 6.42 6 IDT71V428S, IDT71V428L, 3.3V CMOS Static RAM 4 Meg (1M x 4-Bit) Commercial and Industrial Temperature Ranges Timing Waveform of Write Cycle No.1 (WE Controlled Timing)(1,2,4) tWC ADDRESS tAW CS tAS WE tWHZ DATAOUT (3) (5) tWP (2) tWR tOW HIGH IMPEDANCE tDW tDH (5) tCHZ (3) (5) DATAIN DATAIN VALID 3623 drw 08 Timing Waveform of Write Cycle No.2 (CS Controlled Timing)(1,4) tWC ADDRESS tAW CS tAS WE tDW DATAIN DATAIN VALID 3623 drw 09 tCW tWR tDH NOTES: 1. A write occurs during the overlap of a LOW CS and a LOW WE. 2. OE is continuously HIGH. If during a WE controlled write cycle OE is LOW, tWP must be greater than or equal to tWHZ + tDW to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is as short as the specified tWP. 3. During this period, I/O pins are in the output state, and input signals must not be applied. 4. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state. 5. Transition is measured ±200mV from steady state. 6.42 7 IDT71V428S, IDT71V428L, 3.3V CMOS Static RAM 4 Meg (1M x 4-Bit) Commercial and Industrial Temperature Ranges Ordering Information IDT 71V428 Device Type X X Die Power Revision XX Speed XXX Package X X Process/ Temperature Range Blank Commercial (0°C to +70°C) I Industrial (–40°C to +85°C) G Restricted hazardous substance device Y 10* 12 15 S L 32-pin 400-mil SOJ (S0323) Speed in nanoseconds Standard Power Low Power Blank First Generation or current stepping being shipped Y Second Generation die step * Commercial only for low power (L10) speed grade. 3623 drw 10 6.42 8 IDT71V428S, IDT71V428L, 3.3V CMOS Static RAM 4 Meg (1M x 4-Bit) Commercial and Industrial Temperature Ranges Datasheet Document History 8/31/99 Pg. 2 Pg. 4 Pg. 7 Pg. 9 Pg. 1–9 Pg. 8 Pg. 8 Pg. 8 Updated to new format Added footnote for VHC in Truth Table Added footnote on jig and scope capacitance in Figure 2 Revised footnote on Write Cycle No. 1 diagram Added Datasheet Document History Added Industrial temperature range offerings Updated ordering information for die revision Updated note, L10 speed grade commercial temperature only and updated die stepping from YF to Y. Added "Restricted hazardous substance device" to ordering information. 9/29/99 11/26/02 07/31/03 09/30/04 CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com for Tech Support: sramhelp@idt.com 800-544-7726 The IDT logo is a registered trademark of Integrated Device Technology, Inc. 6.42 9