C1226

® ISO 9001 Registered Process C1226 CMOS 1.2µ m 100V CMOS, Double Metal - Double Poly Electrical Characteristics T = 25oC Unless otherwise noted Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor Threshold Voltage VTN Body Factor γN Conduction Factor βN Effective Channel Length LeffN Width Encroachment ∆WN Punch Through Voltage BVDSSN Poly Field Threshold Voltage VTFPN Symbol P-Channel High Voltage Transistor Threshold Voltage HVTP Punch Through Voltage HVBVDSSP ON Resistance HVPR0N Operating Voltage P-Channel Low Voltage Transistor Threshold Voltage VTP Body Factor γP Conduction Factor βP Effective Channel Length LeffP Width Encroachment ∆WP BVDSSP Punch Through Voltage Poly Field Threshold Voltage VTFP(P) Minimum 0.70 120 550 Typical 0.90 700 VGS = 5V VDS = 100V 0.45 0.475 78 1.35 0.4 12 15 Typical –0.90 2500 VGS = 5V VDS = 100V –0.45 0.6 25 1.5 0.4 –12 –12 Maximum 1.10 850 Unit V V Ω Comments W/L = 147/5 0.30 64 0.65 92 5 8 Minimum –0.70 –120 2000 V V1/2 µA/V 2 µm µm V V Unit V V Ω V 100x1.5µm 100x1.5µm 100x100µm 100x1.5µm Per side Maximum –1.10 3000 Comments W/L = 139/5 -0.65 20 –0.30 30 –5 –8 V V1/2 µA/V 2 µm µm V V 100x1.5µm 100x1.5µm 100x100µm 100x1.5µm Per side © 2001 IMP, Inc. 69 Process C1226 Physical Characteristics Diffusion & Thin Films Symbol Starting Material p Well (field) Sheet Resistance ρN-well(f) ρN+ N+ Sheet Resistance N+ Junction Depth xjN+ ρP+ P+ Sheet Resistance P+ Junction Depth xjP+ High-Voltage Gate Oxide Th HTGOX Gate Oxide Thickness TGOX Interpoly Oxide IPOX ρPOLY1 Gate Poly Sheet Resistance ρM1 Metal-1 Sheet Resistance ρM2 Metal-2 Sheet Resistance Passivation Thickness TPASS High Voltage Section Rules Min Channel Width Min Spacing, Active Region, 5V Poly1 Width/Space Poly2 Width/Space Contact Width/Space Via Width/Space Metal-1 Width/Space Metal-2 Width/Space Minimum 1.0 20 60 Typical 1.7 35 0.3 110 0.3 24 24 42.0 30.0 45 29 200+900 Maximum 2.4 50 150 Unit KΩ/ Ω/ µm Ω/ µm nm nm nm Ω/ mΩ/ mΩ/ nm Comments n-well 33.6 50.4 oxide+nit. Layout Rules 4.0µm 2.0µm 1.5/2.0µm 3.0/2.0µm 1.5/1.5µm 1.5/1.5µm 2.5/1.5µm 2.5/1.5µm Diffusion Overlap of Contact Poly Overlap of Contact Contact to Poly Space Metal-1 Overlap of Contact Minimum Pad Opening Minimum Pad to Pad Spacing Minimum Pad Pitch 1.0µm 1.0µm 1.5µm 1.0µm 65x65µm 5.0µm 80µm 70 C1226-11-01