C3013

® ISO 9001 Registered Process C3013 CMOS 3µ m 10 Volt Single Metal Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Minimum 0.6 42 2.85 12 12 Typical 0.8 0.6 47 3.2 0.7 Maximum 1.0 52 3.55 Unit V V1/2 µA/V2 µm µm V V Comments 100x4µm 100x4µm 100x100µm 100x4µm Per side P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTP γP βP LeffP ∆WP BVDSSP VTFP(P) Minimum –0.6 13 2.85 –12 –12 Typical –0.8 0.55 15 3.2 0.9 Maximum –1.0 19 3.55 Unit V V1/2 µA/V2 µm µm V V Comments 100x4µm 100x4µm 100x100µm 100x4µm Per side Diffusion & Thin Films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Interpoly Oxide Thickness Gate Poly Sheet Resistance Bottom Poly Sheet Res. Metal-1 Sheet Resistance Passivation Thickness Symbol ρP-well(f) ρN+ xjN+ ρP+ xjP+ TGOX TP1P2 ρPOLY1 ρPOLY2 ρM1 TPASS Minimum 3.2 16 50 44 15 15 Typical 4.8 21 0.8 80 0.7 48 60 22 22 30 200+900 Maximum 6.5 27 100 52 30 30 60 Unit KΩ/ Ω/ µm Ω/ µm nm nm Ω/ Ω/ mΩ/ nm Comments P-well oxide+nit. Capacitance Gate Oxide Metal-1 to Poly-1 Metal-1 to Silicon Poly-1 to Poly-2 Symbol COX CM1P CM1S CP1P2 Minimum 0.66 0.026 0.51 Typical 0.72 0.0523 0.030 0.57 Maximum 0.78 0.034 0.63 Unit fF/µm2 fF/µm2 fF/µm2 fF/µm2 Comments © IMP, Inc. 85 Process C3013 Physical Characteristics Starting Material Starting Mat. Resistivity Typ. Operating Voltage Well Type Metal Layers Poly Layers Contact Size Metal-1 Width/Space Gate Poly Width/Space N 15 - 25 Ω-cm 5V P-well 1 2 2.0x2.0µm 3.5 / 2.5µm 4.0 / 2.5µm N+/P+ Width/Space N+ To P+ Space Contact To Poly Space Contact Overlap Of Diffusion Contact Overlap Of Poly Metal-1 Overlap Of Contact Minimum Pad Opening Minimum Pad-to-Pad Spacing Minimum Pad Pitch 3.0 / 3.0µm 12µm 2.5µm 1.5µm 1.0µm 1.0µm 100x100µm 55µm 80.0µm Special Feature of C3013 Process: P-well analog process with single metal CMOS 3.0 µm technology for 10 Volt applications. 86 C3013-4-98