04N03LA

IPI04N03LA, IPP04N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID 25 4.2 80 V m A PG-TO262-3 PG-TO220-3 Type IPI04N03LA IPP04N03LA Package PG-TO262-3 PG-TO220-3 Marking 04N03LA 04N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 80 80 385 290 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=77 A, R GS=25 I D=80 A, V DS=20 V, di /dt =200 A/μs, T j,max=175 °C mJ 6 kV/μs ±20 T C=25 °C 107 -55 ... 175 55/175/56 V W °C J-STD20 and JESD22 Rev. 1.9 page 1 2007-08-29 IPI04N03LA, IPP04N03LA Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=60 μA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=55 A V GS=10 V, I D=55 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=55 A 25 1.2 1.6 0.1 2 1 μA V 1.4 62 40 K/W Values typ. max. Unit - 10 10 5.4 100 100 6.7 nA m 43 3.5 1.1 85 4.2 S 2) Current is limited by bondwire; with an R thJC=1.4 K/W the chip is able to carry 125 See figure 3 3) T j,max=150 °C and duty cycle D