08090

P TF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • • Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P–1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz 0 55 Efficiency 50 45 40 35 30 400 kHz 25 20 600 kHz 36 38 40 42 44 46 48 50 15 10 -10 -20 -30 -40 -50 -60 -70 -80 -90 • Modulation Spectrum (dB) Drain Efficiency (%) • • • • PTF080901E Package 30248 Output Power (dBm) PTF080901F Package 31248 ESD: Electrostatic discharge sensitive device—observe handling precautions! RF Characteristics at TCASE = 25°C unless otherwise indicated EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 700 mA, P OUT = 45 W, f = 959.8 MHz Characteristic Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency Symbol EVM (RMS) ACPR ACPR Gps Min — — — — — Typ 2.5 –62 –74 18 40 Max — — — — — Unit % dBc dBc dB % ηD Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 650 mA, POUT = 90 W PEP, f = 960 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Data Sheet 1 Symbol Gps Min 17 40 — Typ 18 42 –32 Max — — –29 Unit dB % dBc 2004-04-05 ηD IMD PTF080901 DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Drain–Source Breakdown Voltage Drain Leakage Current On–State Resistance Operating Gate Voltage Gate Leakage Current Conditions VGS = 0 V, IDS = 10 µA VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 650 mA VGS = 10 V, V DS = 0 V Symbol V(BR)DSS IDSS RDS(on) VGS IGSS Min 65 — — 2.5 — Typ — — 0.1 3.2 — Max — 1.0 — 4 1.0 Unit V µA V V µA Maximum Ratings Parameter Drain–Source Voltage Gate–Source Voltage Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RθJC Symbol VDSS VGS TJ PD Value 65 –0.5 to +12 200 335 1.9 –40 to +150 0.52 Unit V V °C W W/°C °C °C/W Typical Performance (measurements taken in production test fixture) EDGE EVM Performance V DD = 28 V, IDQ = 700 mA, f = 959.8 MHz -20 9 90 80 Modulation Spectrum P OUT = 40 W, f = 959.8 MHz 2.1 EVM RMS (average %) . EVM RMS (average %) . 1.9 1.7 1.5 EVM -30 -40 -50 400 KHz -60 -70 600 KHz -80 -90 -100 0.97 Modulation Spectrum (dBc) 8 7 6 5 4 3 2 1 0 36 38 40 42 44 46 48 50 EVM Efficiency 60 50 40 30 20 10 0 1.3 1.1 0.9 0.7 0.5 0.47 0.57 0.67 0.77 0.87 Quiescent Current (A) Output Power (dBm) All published data at TCASE = 25°C unless otherwise indicated. Data Sheet 2 2004-04-05 Drain Efficiency (%) 70 PTF080901 Typical Performance (cont.) Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) VDD = 28 V, IDQ = 650 mA, f1 = 959 MHz, f2 = 960 MHz 0 -10 -20 T ypical POUT, Gain & Efficiency (at P-1dB) vs. Frequency V DD = 28 V, IDQ = 650 mA 18 80 17 Gain 70 IMD (dBc) Gain (dB) -30 -40 -50 -60 -70 -80 43 45 3rd Order 16 Efficiency 60 5th 7th 15 Output Pow er 50 47 49 51 14 860 880 900 920 940 40 960 Output Power (dBm), PEP Frequency (MHz) IM3 vs. Output Power at Selected Biases V DD = 28 V, f1 = 959, f2 = 960 MHz -20 Broadband Performance V DD = 28 V, IDQ = 650 mA, POUT = 45 W 60 0 -3 Efficiency 40 30 20 Gain 10 860 Return Loss -6 -9 -12 -15 960 Gain (dB), Efficiency (%) -25 -30 480 mA 50 IMD (dBc) -35 -40 -45 -50 -55 -60 39 41 43 45 47 49 51 820 mA 650 mA 880 900 920 940 Output Power (dBm), PEP Frequency (MHz) All published data at TCASE = 25°C unless otherwise indicated. Data Sheet 3 2004-04-05 Return Loss (dB) Efficiency (%), POUT (dBm) PTF080901 Typical Performance (cont.) Power Sweep VDD = 28 V, f = 960 MHz 19.0 18.5 IDQ = 820 mA 20 19 18 17 16 15 Gain & Efficiency vs. Output Power V DD = 28 V, IDQ = 650 mA, f = 960 MHz 70 Gain 60 50 40 30 20 Efficiency 10 40 43 46 49 52 18.0 17.5 17.0 16.5 37 39 41 43 45 47 49 51 53 IDQ = 480 mA IDQ = 650 mA 14 Output Power (dBm) Output Power (dBm) Output Power (at 1 dB Compression) vs. Supply Voltage IDQ = 650 mA, f = 960 MHz 52.0 IS-95 CDMA Performance V DD = 28 V, IDQ = 700 mA, f = 880 MHz 60 50 -40 -45 ACP FC – 0.75 MHz -50 -55 Efficiency 20 10 ACPR FC + 1.98 MHz -60 -65 -70 40 41 42 43 44 45 Drain Efficiency (%) 51.5 40 30 51.0 50.5 50.0 24 26 28 30 32 0 Supply Voltage (V) Output Power (dBm), Avg. All published data at TCASE = 25°C unless otherwise indicated. Data Sheet 4 2004-04-05 Adjacent Channel Power Ratio (dBc) Output Power (dBm) Drain Efficiency (%) Power Gain (dB) Gain (dB) PTF080901 Typical Performance (cont.) Three–Carrier CDMA 2000 Performance VDD = 28 V, IDQ = 700 mA, f = 880 MHz 50 45 ACP Up ACP Low ALT Up -44 Bias Voltage vs. Temperature Voltage normalized to typical gate voltage. Series show current. 1.03 1.50 A 3.00 A 4.50 A 1.01 1.00 0.99 0.98 0.97 0.96 -20 6.00 A 7.50 A 9.00 A 40 35 30 25 20 15 39 40 41 -50 -53 -56 Efficiency -59 -62 -65 Normalized Bias Voltage -47 1.02 Drain Efficiency (%) Adjacent Channel Power Ratio (dBc) 42 43 44 45 0 20 40 60 80 100 Output Power (dBm), Avg. Case Temperature (ºC) Broadband Circuit Impedance D GE NE Z0 = 50 Ω G S - W A VE LE NG THS Z Load 980 MHz TOW A RD L OA D GTHS EL EN WAV 0. 0 0.1 Frequency MHz 860 920 940 960 980 Z Source Ω R 2.50 2.67 2.79 2.94 2.91 jX –1.09 –0.43 –0.35 0.12 0.37 R Z Load Ω jX –1.08 –0.32 –0.21 0.27 0.53 1.98 1.99 1.87 1.85 1.79 860 MHz 860 MHz 0 .1 All published data at TCASE = 25°C unless otherwise indicated. Data Sheet 5 2004-04-05 -- - 0.2 0. 1 Z Source Z Load TOW AR D Z Source 980 MHz PTF080901 Test Circuit VDD QQ1 LM7805 R7 3.3 kV C21 0.001 µ F R3 1.2 kV Q1 BCP56 C22 0.001 µF R4 1.3 kV C23 0.001 µF R5 10 kV R6 22 kV R1 10 V R2 5.1 kV C3 33 pF C7 33pF C8 1µF L1 C1 10 µF, 35 V C2 0.1 µF 50 V + +C9 10µF 35V C10 0.1µF 50V + C11 10µF 35V l4 DUT RF_IN l7 C12 2.2pF C15 33pF l1 C4 33pF l2 l3 C5 4.3pF l5 C6 6.2pF l6 l9 C13 1.4pF l10 l11 C14 0.5pF RF_OUT l8 L2 C16 33pF C17 1µF + C18 10µF 35V C19 0.1µF 50V + C20 10µF 35V 080901_sch Test Circuit Schematic for 960 MHz Circuit Assembly Information DUT PCB Microstrip l1 l2 l3 l4 l5 l6 l7, l8 l9 l10 l11 PTF080901 0.76 mm. [.030”] thick, εr = 4.5 LDMOS Transistor 2 oz. copper Dimensions: L x W (mm.) 12.83 x 1.35 17.27 x 1.35 9.14 x 1.35 50.80 x 0.75 9.27 x 16.26 14.73 x 15.24 22.61 x 1.27 16.13 x 15.24 22.35 x 2.16 4.95 x 1.37 Rogers TMM4 Dimensions: L x W (in.) 0.505 x 0.053 0.680 x 0.053 0.360 x 0.053 2.000 x 0.030 0.365 x 0.640 0.580 x 0.600 0.890 x 0.050 0.635 x 0.600 0.880 x 0.085 0.195 x 0.053 Electrical Characteristics at 960 MHz 0.075 λ, 50 Ω 0.101 λ, 50 Ω 0.053 λ, 50 Ω 0.289 λ, 73.66 Ω 0.061 λ, 7.48 Ω 0.097 λ, 7.93 Ω 0.132 λ, 52.47 Ω 0.105 λ, 7.93 Ω 0.134 λ, 38.02 Ω 0.029 λ, 50 Ω Data Sheet 6 2004-04-05 PTF080901 Test Circuit (cont.) VGS C11 C1 C2 + + R6 R1 R2 1 00 5 12 LM R4 R3 Q1 QQ1 C22 10 3 5V R7 10 35V R5 C23 C21 VDD C7 C8 L1 C10 + 10 3 5V C3 C9 C12 C14 C15 RF_IN C4 C5 C13 C16 C17 C18 10 3 5V RF_OUT C6 C19 L2 VDD + 10 + 080901_assy 35 V C20 Reference Circuit1 (not to scale) Component C1, C9, C11, C18, C20 C2, C10, C19 C3, C4, C7, C15, C16 C5 C6 C8, C17 C12 C13 C14 C21, C22, C23 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5 R6 R7 Description Capacitor, 10 µF, 35 V Capacitor, 0.1 µF, 50 V Capacitor, 33 pF Capacitor, 4.3 pF Capacitor, 6.2 pF Capacitor, 1 µ, 50 V Capacitor, 2.2 pF Capacitor, 1.4 pF Capacitor, 0.5 pF Capacitor, 0.001 µF, 50 V, 0603 Ferrite, 6 mm Transistor Voltage Regulator Resistor, 10 ohms, 1/4 W, 1206 Resistor, 5.1 k-ohms, 1/4 W, 1206 Resistor, 1.2 k-ohms, 1/10 W, 0603 Resistor, 1.3 k-ohms, 1/10 W, 0603 Resistor, Variable, 10 k-ohms, 1/4 W Resistor, 22 k-ohms, 1/10 W, 0603 Resistor, 3.3 k-ohms, 1/4 W, 1206 Manufacturer Digi-Key Digi-Key ATC ATC ATC Digi-Key ATC ATC ATC Digi-Key Philips Infineon National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment Tantalum TE Series SMD PCS6106TR-ND P4525-ND 100B 330 100B 4R3 100B 6R2 19528-ND 100B 2R2 100B 1R4 100B 0R5 PCC1772CT-ND 53/3/4.6-452 BCP56 LM7805 P10ECT-ND P5.1KECT-ND P1.2KGCT-ND P1.3KGCT-ND 3224W-103ETR-ND P22KGCT-ND P3.3KECT-ND 1Gerber files for this circuit are available on request. Data Sheet 7 2004-04-05 PTF080901 Ordering Information Type PTF080901E PTF080901F Package Outline 30248 31248 Package Description Thermally enhanced, flange mount Thermally enhanced, earless Marking PTF080901E PTF080901F Package Outline Specifications Package 30248 (45° X 2.72 [.107]) C L D 9.78 [.385] 19.43 ±0.51 [.765±.020] 2X 4.83±0.51 [.190±.020] S LID 9.40 +0.10 C -0.15 L +.004 [.370 -.006 ] G 2X 12.70 [.500] 27.94 [1.100] 1.02 [.040] 19.81±0.20 [.780±.008] 2X R1.63 [.064] 4X R1.52 [.060] SPH 1.57 [.062] 3.76±0.38 [.142±.015] 0.0381 [.0015] -A0.51 [.020] 34.04 [1.340] P K G _248_0 Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 8 2004-04-05 PTF080901 Package Outline Specifications Package 31248 ( 45° X 2.72 [.107]) 4.83±0.51 [.190±.020] C L D 9.78 [.385] LID 9.40+0.10 -0.15 [.370+.004 ] -.006 C L 19.43±0.51 [.765±.020] G 2X 12.70 [.500] SPH 1.58 [.062] 19.81±0.20 [.780±.008] 0.51 [.020] 1.02 [.040] 0.0381 [.0015] -A- S 3.61±0.38 [.142±.015] 20.57 [.810] P K G _248_1 Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 2004-04-05 PTF080901 Confidential - Limited Internal Revision History: 2004-04-05 Previous Version: 2004-01-02, Data Sheet Page Subjects (major changes since last revision) 1,8,9 6,7 Add information about PTF080901F, new package outline diagrams Circuit information updated. Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2004-04-05 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10