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4N36

4N36

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    4N36 - Industry Standard Single Channel 6 Pin DIP Optocoupler - Infineon Technologies AG

  • 详情介绍
  • 数据手册
  • 价格&库存
4N36 数据手册
PHOTOTRANSISTOR Industry Standard Single Channel 6 Pin DIP Optocoupler DEVICE TYPES Part No. CTR % Min. 4N25 20 4N26 20 4N27 10 4N28 10 4N35 100 4N36 100 4N37 100 4N38 10 H11A1 50 H11A2 20 H11A3 20 H11A4 10 H11A5 30 Dimensions in Inches (mm) Part No. MCT2 MCT2E MCT270 MCT271 MCT272 MCT273 MCT274 MCT275 MCT276 MCT277 CTR % Min. 20 20 50 45–90 75–150 125–250 225–400 70–90 15–60 100 3 .248 (6.30) .256 (6.50) 4 2 1 pin one ID Anode 1 Cathode 2 5 6 6 Base 5 Collector 4 Emitter NC 3 .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) 18° .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3°–9° .010 (.25) typ. .300–.347 (7.62–8.81) .114 (2.90) .130 (3.0) .300 (7.62) typ. FEATURES • Interfaces with Common Logic Families • Input-output Coupling Capacitance < 0.5 pF • Industry Standard Dual-in-line 6-pin Package • Field Effect Stable by TRIOS® • 5300 VRMS Isolation Test Voltage • Underwriters Laboratory File #E52744 • V VDE #0884 Approval Available with Option 1 DE DESCRIPTION This data sheet presents five families of Infineon Industry Standard Single Channel Phototransistor Couplers. These families include the 4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/ A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/ 277 devices.Each optocoupler consists of Gallium Arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS Isolation Test Voltage. This isolation performance is accomplished through Infineon double molding isolation manufacturing process. Compliance to VDE 0884 partial discharge isolation specification is available for these families by ordering option 1. Phototransistor gain stability, in the presence of high isolation voltages, is insured by incorporating a TRansparent lOn Shield (TRIOS)® on the phototransistor substrate. These isolation processes and the Infineon IS09001 Quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. APPLICATIONS • AC Mains Detection • Reed Relay Driving • Switch Mode Power Supply Feedback • Telephone Ring Detection • Logic Ground Isolation • Logic Coupling with High Frequency Noise Rejection Notes: Designing with data sheet is covered in Application Note 45.  2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 2–53 March 27, 2000-00 Maximum Ratings TA=25°C Emitter Reverse Voltage .......................................................................................... 6.0 V Forward Current ........................................................................................ 60 mA Surge Current (t≤10 µs)............................................................................... 2.5 A Power Dissipation................................................................................... 100 mW Detector Collector-Emitter Breakdown Voltage........................................................... 70 V Emitter-Base Breakdown Voltage ................................................................ 7.0 V Collector Current ....................................................................................... 50 mA Collector Current(t
4N36
物料型号: - 4N25、4N26、4N27、4N28、4N35、4N36、4N37、4N38、H11A1、H11A2、H11A3、H11A4、H11A5、MCT2、MCT2E、MCT270、MCT271、MCT272、MCT273、MCT274、MCT275、MCT276、MCT277。

器件简介: - 这些光耦器由英飞凌提供,包括4N系列、H11A系列、MCT2系列等,每个光耦器由砷化镓红外LED和硅NPN光电晶体管组成。

引脚分配: - 光耦器采用行业标准的双列直插式6脚封装。

参数特性: - 与常见逻辑系列兼容,输入输出耦合电容小于0.5pF。 - 通过英飞凌的双模塑隔离制造工艺实现高隔离电压。 - 通过UL和VDE认证,隔离测试电压为5300Vrms。

功能详解: - 这些光耦器主要用于交流电源检测、簧片继电器驱动、开关电源反馈、电话铃声检测、逻辑地隔离和逻辑耦合高频噪声抑制。

应用信息: - 设计涵盖应用说明45中的内容。

封装信息: - 器件可配置为表面贴装,并提供卷带包装或标准管状运输容器。

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