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BAR16-1

BAR16-1

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BAR16-1 - Silicon PIN Diode - Infineon Technologies AG

  • 数据手册
  • 价格&库存
BAR16-1 数据手册
BAR1.../BAR61... Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAR14-1 ! BAR15-1 ! BAR16-1 ! BAR61 " , ! ,! , , , , , , ,     Type BAR14-1 BAR15-1 BAR16-1 BAR61 Package SOT23 SOT23 SOT23 SOT143 Configuration series common cathode common anode PI element LS(nH) 1.8 1.8 1.8 2 Marking L7s L8s L9s 61s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation TS ≤ 65°C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point2) 1Pb-containing 2For Symbol VR IF Ptot Tj Top Tstg Value 100 140 250 150 -55 ... 125 -55 ... 150 Unit V mA mW °C Symbol RthJS Value ≤ 340 Unit K/W package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 BAR1.../BAR61... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Reverse current VR = 50 V VR = 100 V IR Symbol min. Values typ. max. Unit nA 1.05 100 1000 1.25 V Forward voltage IF = 100 mA VF - AC Characteristics Diode capacitance VR = 0 V, f = 100 MHz VR = 50 V, f = 1 MHz Zero bias conductance VR = 0 V, f = 100 MHz Forward resistance I F = 0.01 mA, f = 100 MHz I F = 0.1 mA, f = 100 MHz I F = 1 mA, f = 100 MHz I F = 10 mA, f = 100 MHz Charge carrier life time I F = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω I-region width WI 146 µm τ rr rf 300 35 5.5 700 2600 470 55 8 1000 4200 85 12 ns Ω gP CT 0.2 0.25 50 0.5 0.5 100 µS pF 2 2007-04-19 BAR1.../BAR61... Diode capacitance CT = ƒ (VR) f = Parameter BAR 14-1...16-1 EHD07067 Forward resistance rf = ƒ (I F) f = 100MHz 10 4 rf Ω 10 3 BAR 14-1...16-1 EHD07066 1.0 CT pF 0.5 10 2 f = 1 MHz f = 100 MHz 10 1 0.0 0 10 20 30 40 V VR 50 10 0 10 -2 10 -1 10 0 10 1 mA 10 2 ΙF Forward current IF = ƒ (VF) TA = 25°C 10 2 BAR 14-1...16-1 EHD07065 Forward current IF = ƒ (T S) BAR14-1, BAR15-1, BAR16-1 160 mA ΙF mA 10 1 TA = -40 ˚C 25 ˚C 85 ˚C 150 ˚C IF 120 100 10 0 80 60 10 -1 40 20 10 -2 0.0 0.5 1.0 V VF 1.5 0 0 15 30 45 60 75 90 105 120 °C 150 TS 3 2007-04-19 BAR1.../BAR61... Application circuit for attenuation networks with diode BAR61 50 k Ω +12 V 1 nF V Reg. 1 nF BC 238 1 kΩ 1 nF Input 1 nF 12 k Ω 1 nF BAR 61 1 kΩ 1 nF Output 1 nF 1 nF 5.6 k Ω 4.7 k Ω 1.8 k Ω 2.2 k Ω EHM07026 4 2007-04-19 Package SOT143 BAR1.../BAR61... Package Outline 0.15 MIN. 2.9 ±0.1 1.9 4 3 B 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.4 ±0.15 10˚ MAX. 1 2 10˚ MAX. 0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 1.7 0.25 M B 0.08...0.1 A 5 0...8˚ 0.2 M A Foot Print 0.8 1.2 0.8 0.9 1.2 0.8 0.8 Marking Layout (Example) Manufacturer RF s Pin 1 56 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.9 1.1 2005, June Date code (YM) BFP181 Type code 4 0.2 Pin 1 3.15 2.6 8 1.15 5 2007-04-19 Package SOT23 BAR1.../BAR61... Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 6 2007-04-19 BAR1.../BAR61... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-04-19
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