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BAR65-02V

BAR65-02V

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BAR65-02V - Silicon PIN Diode - Infineon Technologies AG

  • 详情介绍
  • 数据手册
  • 价格&库存
BAR65-02V 数据手册
BAR65... Silicon PIN Diode • Series diode for mobile communication in low loss transmit-receiver switches • Band switch for TV-tuners • Very low forward resistance (typ. 0.65 Ω @ 5 mA) • Low capacitance (typ. 0.5 pF @ 0V) • Fast switching applications • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAR65-02L BAR65-02V BAR65-03W  Type BAR65-02L* BAR65-02V BAR65-03W Package TSLP-2-1 SC79 SOD323 Configuration single, leadless single single LS(nH) 0.4 0.6 1.8 Marking NN N M/blue * Preliminary Data Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation BAR65-02L, TS ≤ 128°C BAR65-02V, TS ≤ 118°C BAR65-03W, TS ≤ 113°C Junction temperature Operating temperature range Storage temperature 1Pb-containing Symbol VR IF Ptot Value 30 100 250 250 250 Unit V mA mW Tj Top Tstg 150 -55 ... 125 -55 ... 150 °C package may be available upon special request 1 2007-04-19 BAR65... Thermal Resistance Parameter Junction - soldering point 1) BAR65-02L BAR65-02V BAR65-03W Symbol RthJS Value ≤ 90 ≤ 130 ≤ 145 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA 1For Symbol min. IR VF - Values typ. 0.93 max. 20 1 Unit nA V calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-04-19 BAR65... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 0 V, f = 100 MHz ... 1.8 GHz Reverse parallel resistance VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Forward resistance I F = 1 mA, f = 100 MHz I F = 5 mA, f = 100 MHz I F = 10 mA, f = 100 MHz Charge carrier life time I F = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω I-region width Insertion loss1) I F = 1 mA, f = 1.8 GHz I F = 5 mA, f = 1.8 GHz I F = 10 mA, f = 1.8 GHz Isolation1) VR = 0 V, f = 0.9 GHz VR = 0 V, f = 1.8 GHz VR = 0 V, f = 2.45 GHz 1BAR65-02L Symbol min. CT RP rf τ rr Values typ. max. Unit pF 0.45 0.4 0.5 0.9 0.8 kΩ 700 10 5 Ω 1 0.65 0.56 80 0.95 0.9 ns - WI IL - 3.5 0.08 0.06 0.05 - µm dB ISO 12 7 5 - in series configuration, Z = 50Ω 3 2007-04-19 BAR65... Diode capacitance CT = ƒ (VR) f = Parameter Reverse parallel resistance RP = ƒ(V R) f = Parameter 10 4 KOhm F 100 MHz 0.5 10 3 0.4 1 MHz ... 1.8 GHz CT 0.35 Rp 10 2 1 GHz 1.8 GHz 0.3 10 1 0.25 0.2 10 0 0.15 10 -1 0 0.1 0 2 4 6 8 10 12 14 16 V 20 2 4 6 8 10 12 14 16 V 20 VR VR Forward resistance rf = ƒ (IF ) f = 100MHz 10 1 Forward current IF = ƒ (VF) TA = Parameter 10 0 A 10 -1 Ohm 10 -2 10 0 IF 10 -3 rf 10 -4 -40 °C 25 °C 85 °C 125 °C 10 -5 10 -1 -2 10 10 -1 10 0 10 1 mA 10 2 10 -6 0 0.2 0.4 0.6 0.8 V 1.2 IF VF 4 2007-04-19 BAR65... Forward current IF = ƒ (T S) BAR65-02L Forward current IF = ƒ (T S) BAR65-02V 120 mA 120 mA 100 90 80 100 90 80 IF 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 150 IF 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS Forward current IF = ƒ (T S) BAR65-03W 120 mA 100 90 80 IF 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 150 TS 5 2007-04-19 BAR65... Permissible Puls Load RthJS = ƒ (tp) BAR65-02L 10 2 Permissible Pulse Load IFmax / I FDC = ƒ (t p) BAR65-02L 10 1 I Fmax/IFDC K/W RthJS 10 1 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -6 10 10 -5 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BAR65-02V 10 3 Permissible Pulse Load IFmax / I FDC = ƒ (t p) BAR65-02V 10 2 10 2 IFmax/IFDC RthJS 10 1 10 1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 -5 D=0 0,005 0,01 0,02 0,05 0,1 0,2 0,5 10 0 -6 10 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TS TS 6 2007-04-19 BAR65... Permissible Puls Load RthJS = ƒ (tp) BAR65-03W 10 3 Permissible Pulse Load IFmax / I FDC = ƒ (t p) BAR65-03W 10 1 mA 10 2 I Fmax/IFDC IF mA 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -6 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 °C 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 °C 10 1 tp tp Insertion loss IL = -|S21|2 = ƒ(f) IF = Parameter BAR65-02L in series configuration, Z = 50Ω 0 dB Isolation ISO = -|S21| 2 = ƒ(f) VR = Parameter BAR65-02L in series configuration Z = 50Ω 0 dB -0.1 |S21|2 |S21|2 10 mA 5 mA 1 mA 0.1 mA -10 -0.15 -0.2 -15 -0.25 0V 1V 10 V -20 -0.3 -25 -0.35 -0.4 0 0.5 1 1.5 2 GHz 3 -30 0 0.5 1 1.5 2 GHz 3 f f 7 2007-04-19 Package SC79 BAR65... Package Outline 0.2 0.8 ±0.1 10˚MAX. M A 0.13 -0.03 +0.05 2 1.6 ±0.1 0.55 ±0.04 Foot Print 1.35 0.35 Marking Layout (Example) 2005, June Date code 0.35 BAR63-02V Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch) Reel ø330 mm = 10.000 Pieces/Reel Standard 4 Reel with 2 mm Pitch 2 0.2 1.33 1.96 Cathode marking 0.4 0.93 8 0.2 ±0.05 0.66 Cathode marking 1 0.3 ±0.05 Cathode marking 10˚MAX. 1.2 ±0.1 A 8 2007-04-19 BAR65... Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code M onth 2 0 03 01 02 03 04 05 06 07 08 09 10 11 12 a b c d e f g h j k l n 2 0 04 p q r s t u v x y z 2 3 2005 A B C D E F G H J K L N 2006 P Q R S T U V X Y Z 4 5 2 0 07 a b c d e f g h j k l n 2008 p q r s t u v x y z 2 3 2009 A B C D E F G H J K L N 2010 P Q R S T U V X Y Z 4 5 2011 a b c d e f g h j k l n 2012 p q r s t u v x y z 2 3 2 0 13 A B C D E F G H J K L N 2014 P Q R S T U V X Y Z 4 5 1 ) New Marking Layout for SC75, implemented at October 2005. . 9 2007-04-19 Package SOD323 BAR65... Package Outline 0.9 +0.2 -0.1 +0.2 1.25 -0.1 0 ±0.05 A 1.7 +0.2 -0.1 +0.05 0.3 -0.2 2 Cathode marking 1 0.3 +0.1 -0.05 0.25 M A 0.45 ±0.15 2.5 ±0.2 0.15 +0.1 -0.06 Foot Print 0.6 Marking Layout (Example) 0.8 1.7 0.8 BAR63-03W Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 2 2.9 8 Cathode marking 0.65 1.35 1 10 2007-04-19 Package TSLP-2-1 BAR65... Package Outline Top view 0.05 MAX. 2 0.4 +0.1 Bottom view 0.6 ±0.05 0.65±0.05 2 1 1 1) 1) Cathode marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.45 0.275 0.6 0.35 0.35 0.925 0.3 1 Copper Solder mask Stencil apertures Marking Layout (Example) BAS16-02L Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel Reel ø330 mm = 50.000 Pieces/Reel (optional) 4 0.5 1.16 Cathode marking 0.76 8 0.275 0.375 0.25 ±0.035 0.5 ±0.035 1 ±0.05 11 2007-04-19 BAR65... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 2007-04-19
BAR65-02V
### 物料型号 - BAR65-02L - BAR65-02V - BAR65-03W

### 器件简介 BAR65系列是用于移动通信的低损耗发射-接收开关的系列二极管,也适用于电视调谐器的频带开关。这些二极管具有非常低的正向电阻(典型值0.65欧姆@5毫安)和低电容(典型值0.5皮法@0伏),适用于快速开关应用。

### 引脚分配 - TSLP-2-1:单引脚,无引线 - SC79:单引脚 - SOD323:单引脚

### 参数特性 - 最大额定值: - 二极管反向电压(VR):30V - 正向电流(IF):100mA - 总功率耗散(Ptot):250mW(对于BAR65-02L, TS ≤ 128°C;对于BAR65-02V, TS ≤ 118°C;对于BAR65-03W, TS ≤ 113°C) - 结温(Tj):150°C - 工作温度范围(Top):-55°C至125°C - 存储温度(Tstg):-55°C至150°C

- 电气特性(在TA=25°C下,除非另有说明): - 反向电流(IR,VR= 20V):20nA - 正向电压(VF,IF= 100mA):0.93V(典型值) - 电荷载流子寿命(trr,IF = 10mA,IR = 6mA,测量于IR = 3mA,RL= 100Ω):80ns(典型值)

### 功能详解 BAR65系列二极管在移动通信中作为低损耗的发射-接收开关使用,也可用于电视调谐器的频带开关。它们具有低正向电阻和低电容,适合快速开关应用。

### 应用信息 这些二极管适用于移动通信设备中的发射-接收开关,以及电视调谐器中的频带开关。

### 封装信息 - TSLP-2-1:单引脚,无引线 - SC79:单引脚 - SOD323:单引脚
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