BAR74
Silicon Switching Diode For high-speed switching applications
3
Total power dissipation, TS = 54 °C Junction temperature Storage temperature
Thermal Resistance
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Junction - soldering point1)
2 1
1
VPS05161
3
EHA07002
Type BAR74
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current
Marking JBs 1=A
Pin Configuration 2 = n.c. 3=C
Package SOT23
Symbol VR VRM IF IFS Ptot Tj Tstg
Value 50 50 250 4.5 370 150 -65 ... 150
Unit V mA A mW °C
Surge forward current, t = 1 s
RthJS
260
K/W
Jul-27-2001
BAR74
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 100 mA Reverse current VR = 50 V Reverse current VR = 50 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 20 MHz Reverse recovery time t rr , 4 CD 2 IR 100 IR 0.1 VF 1 V(BR) 50 typ. max.
Unit
V
µA
pF ns
Test circuit for reverse recovery time
D.U.T.
ΙF
Oscillograph
2
Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50
I F = 10 mA, IR = 10 mA, R L = 100 measured at IR = 1mA
EHN00015
Oscillograph: R = 50 , tr = 0.35ns, C 1pF
Jul-27-2001
BAR74
Forward current IF = f (TS )
Reverse current IR = f (TA)
300
10 5 nA
BAR 74
EHB00012
mA
ΙR
10 4 max.
V R = 70 V
200
5
IF
150
10 3 5
70V
25V
100
10 2
50
typ.
5
0 0
15
30
45
60
75
90 105 120 °C
150
10 1
0
50
100 TA
˚C
150
TS
Forward current IF = f (VF ) TA = 25°C
150
BAR 74 EHB00013
Peak forward current IFM = f (t p) TA = 25°C
10 2
BAR 74 EHB00014
ΙF
mA
Ι FM
A 10 1
D = 0.005 0.01 0.02 0.05 0.1 0.2
100
typ
max
10 0
50
10 -1
tp
D= T
tp T
0
0
0.5
1.0
V VF
1.5
10-2 10-6
10-5
10-4
10-3
10-2
10-1 s 100
t
3
Jul-27-2001
BAR74
Forward voltage VF = f (TA)
1.0 V
BAR 74
EHB00015
VF
Ι F = 100 mA
10 mA
1 mA 0.5 0.1 mA
0
0
50
100 TA
˚C
150
4
Jul-27-2001
很抱歉,暂时无法提供与“BAR74”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 1+0.18973
- 10+0.17405
- 30+0.17091
- 100+0.1615